Quantum Cascade Lasers
Quantum Cascade Lasers
Quantum Cascade Lasers
InAs1-xSb/AlGa1-xSb on GaSb
Quantum wells
Bulk semiconductors
1.541.539
1.078
E, eV
E (eV)
1.1
AlInAs
0.617
GaInAs 80 A
AlInAs
Ga0.47In0.53As
0.160.156
-0.305
-0.3
0
0
2
40
80
120
100
160
200
200
z ()
z, A
E (eV)
0.2
-0.7
1.595
1.6
-1.6
E, eV
E (eV)
1.21.19
En ( k ) ~
k n2 k||2 ; n 1,2,...
2meff (k )
0.785
0.40.38
-2.5
0
12
16
8-band kp method
-0.0250
-0.025
(4 bands x 2 spins)
2
-1-1)
(10 6cm
K||k, || cm
10
107
20
1.541.539
AlInAs
GaInAs 80 A
absorption
Absorption (1/cm)
E, eV
0.617
AlInAs
0.160.156
-0.305
-0.3
0
2 0
40
80
z ()
100
120
160
z, A
6000
3000
0
0.7
0.86
1.02
1.18
E (eV)
frequency
intersubband
1.21.19
E (eV)
E, eV
9000
200
200
1.595
1.6
0.785
0.40.38
-0.025
-0.025
interband
12000
1.078
E (eV)
15000
K||, cm
-1)
k || (10 6cm -1
10
107
1.34
1.5
3
2
1
z mn
f ( z ) f n ( z ) dz
z
*
m
1
1
f1 ~
cos k z z , f 2 ~
sin k z z; z12 ~ Lz
Lz
Lz
Typical values ~ 10-100 A
Compare with atomic transitions ~ 0.2-0.5 A
3
2
1
z mn
f ( z ) f n ( z ) dz
z
*
m
Intersubband transitions in
asymmetric coupled QWs
0 .8
0 .6
0 .4
0 .2
0
-5 0 0
-4 0 0
-3 0 0
-2 0 0
-1 0 0
Rabi ezE /
High voltage to align levels, high current => high heat dissipation
Rui Yangs talk
QC lasers
injector (n-doped)
active
region
3
injector (n-doped)
520 meV
2
active
region
From sawtooth to staircase potential
60 nm
k w, j lw, j kb , j lb , j
V=0
900
700
600
500
400
300
200
100
0
0
200
400
600
1100
800
1000
Z ()
900
800
V = Vth
Energy (meV)
Energy (meV)
800
700
600
500
400
300
200
100
0
0
200
400
Z ()
600
800
ACTIVE
REGION
I
INJECTOR
ACTIVE
REGION
3
MINIGAP
2
MINIBAND
3
g
0.9 nm thick
well and barrier
55 nm
55 .1 nm
2
1
725 meV
Wavelength agility
layer thicknesses determine emission wavelength
CO: 4.66 m
CH4: 3.3 m
NO: 5.26 m
NH3: 10.6 m
O3: 10 m
N20, CH4: 7.66 m
Terahertz QCLs
1
2
Belkin et al.
Metal-metal waveguide
150m
75
10 0
(a)
0.014
Heavily doped
GaAs
Y A xis T itle
0.012
0.010
0.008
0.006
0.004
0.002
0.000
-0.002
-50
50
100
150
200
250
X Axis Title
GaAs substrate
Active region
150m
75
Gold
10 0
(b)
GaAs substrate
Active region
Gold
Heterogeneous Cascades
(multi-
generation)
So far:
Homogeneous cascade:
single stack of
~ 30 identical active regions & injectors
Now:
Stacked cascades:
Interdigitated
cascades:
Cooperative
cascades:
Charge transport
between stages
How to design
cooperation
Energy
8.0
8.2
Wavelength ( m)
9.45
9.50
9.55
Wavelength ( m)
Distance
Shorter wavelengths
generation
Longer wavelengths
generation
7
225
6
2
1
0
2
1
10
20
200
175
5
30
150
Ultrabroadband (6 - 8 m) spectrum
10
2, 3, 4 A
5 ... 13 A
0.1
7
Wavelength (m)
energy
4
3
g
1
active
region
2
1
II.
I.
Difference frequency
generation in twowavelength QCLs
cladding
Laser1 section
Side contact layer
Laser 2 section
1
substrate
P( p q ( 2) E p Eq*
Results obtained by Feng Xie in
Harvard in summer 2007