Unit 2 - Part 1

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UNIT 2 TRANSISTORS

BJT, JFET, MOSFET - structure,


operation, characteristics and
Biasing, UJT, Thyristor and IGBT -
Structure and characteristics.
BJT
• Semiconductor device which can be used for switching or
amplification
• The fusion of these two diodes produces a three layer, two junction,
three terminal device forming the basis of a Bipolar Junction
Transistor.
• Act as either an insulator or a conductor by the application of a small
signal voltage.
• Three regions of operation
Active Region – the transistor operates as an amplifier and Ic = β*Ib
Saturation – the transistor is “Fully-ON” operating as a switch
and Ic = I(saturation)
Cut-off – the transistor is “Fully-OFF” operating as a switch
and Ic = 0
• Types-PNP and NPN
• Terminals-Emitter ( E ), the Base ( B ) and the Collector ( C )
Bipolar Transistor Configurations
• Three possible ways to connect it within an electronic circuit with one
terminal being common to both the input and output.
• Each method of connection responding differently to its input signal
within a circuit as the static characteristics of the transistor vary with
each circuit arrangement.
• Common Base Configuration – has Voltage Gain but no Current Gain.
• Common Emitter Configuration – has both Current and Voltage Gain.
• Common Collector Configuration – has Current Gain but no Voltage
Gain
The Common Base (CB) Configuration
• BASE connection is common to both the input signal AND the output signal

• Vin and Vout are “in-phase”.


• Has a high ratio of output ( RL ) to input resistance ( Rin ) -Resistance Gain”.
• Voltage gain is given by
• Ic/Ie is the current gain, alpha ( α )

• Application
• Commonly used only in single stage amplifier circuits such as microphone pre-
amplifier or radio frequency ( Rƒ ) amplifiers due to its very good high frequency
response.
The Common Emitter (CE) Configuration

• The input signal is applied between the base and the emitter, while the
output is taken from between the collector and the emitter
• The common emitter amplifier configuration produces the highest current
and power gain of all the three bipolar transistor configurations.
• High gain due to input impedance is LOW as it is connected to a forward
biased PN-junction, while the output impedance is HIGH as it is taken from
a reverse biased PN-junction.

• current flowing out of the transistor must be equal to the currents flowing
into the transistor as the emitter current is given as Ie = Ic + Ib
Cont....
• As the load resistance ( RL ) is connected in series with the collector, the
current gain of the common emitter transistor configuration is quite large
as it is the ratio of Ic/Ib.
• Small change in the base current ( Ib ), will result in a much larger change
in the collector current ( Ic ).
• Beta has a value between 20 and 200 for most general purpose
transistors.
• ie.. if a transistor has a Beta value of 100, then one electron will flow from
the base terminal for every 100 electrons flowing between the emitter-
collector terminal.
• output signal has a 180o phase-shift with regards to the input voltage
signal.

Application
-Used as inverting amplifier
The Common Collector (CC) Configuration
• The input signal is connected directly to the base terminal, while the
output signal is taken from across the emitter load resistor as shown.
• Commonly known as a Voltage Follower or Emitter Follower circuit.

•The load resistance of the common collector transistor receives both the base
and collector currents giving a large current gain
•provides good current amplification with very little voltage gain
Relationship between
DC Currents and Gains

Application
The common collector, or emitter follower
configuration is very useful for impedance
matching applications because of its very high
input impedance, in the region of hundreds of
thousands of Ohms while having a relatively
low output impedance.
A bipolar NPN transistor has a DC current gain, (Beta) value of 200.
Calculate the base current Ib required to switch a resistive load of 4mA.
Output Characteristics
Ic is largely unaffected by changes in Vce above
this value and instead it is almost entirely
controlled by the base current, Ib.

•Saturation- when Vce = 0 to the point of “Cut-


off when Ic = 0 thus giving us the “Operating”
or Q-point of the transistor.
• These two points are joined together by a
straight line and any position along this straight
line represents the “Active Region” of the
•NPN Transistor -normally “OFF” but a transistor.
small input current and a small positive
voltage at its Base ( B ) relative to its
Emitter ( E ) will turn it “ON” allowing a
much large Collector-Emitter current to
flow.
•NPN transistors conduct when Vc is much
greater than Ve.
Biasing of BJT
• Biasing is the process of providing DC voltage which helps in the functioning
of the circuit.
• A transistor is biased in order to make the emitter base junction forward
biased and collector base junction reverse biased, so that it maintains in
active region, to work as an amplifier.
• If a signal of very small voltage is given to the input of BJT, it cannot be
amplified. For BJT, to amplify a signal, two conditions have to be met.
– The input voltage should exceed cut-in voltage for the transistor to be ON.
– The BJT should be in the active region, to be operated as an amplifier.
• If appropriate DC voltages and currents are given through BJT by external
sources, so that BJT operates in active region and superimpose the AC
signals to be amplified, then this problem can be avoided.
• The given DC voltage and currents are so chosen that the transistor remains
in active region for entire input AC cycle. Hence DC biasing is needed.

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