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36 views

Module2_Lecturer3_PPT

Uploaded by

yashwanthranganath
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Module II :Avalanche Transit Time Devices

Previous Class Summarization………..

• Avalanche transit-time diode


- IMPATT mode
- Physical structures of IMPATT diode
- Negative Resistance of IMPATT diode
- Power Output and Efficiency of IMPATT Diode
- Advantages of IMPATT Diode
- Disadvantages of IMPATT Diode
Today's Class discussion……………..

TRAPATT (Trapped plasma avalanche triggered transit mode)DIODES

Physical structures of TRAPATT diode


Principles of Operation TRAPATT diode
Power output and efficiency of TRAPATT diode
Physical structures of TRAPATT diode

• TRAPATT stands for trapped plasma avalanche triggered


transit mode and first reported by Pager.
• It is a high-efficiency microwave generator.
• The operating frequency from several hundred mega hertz
to several giga hertz.
• The basic operation of the oscillator is a semiconductor p-n
junction diode reverse biased to current densities and
encountered in normal avalanche operation.
• The doping of the depletion region is at the diode is well
"punched through" (Extended Drift Region)at breakdown
voltage.
• The dc electric field in the depletion region just prior to
breakdown is well above the saturated drift-velocity level.
Physical structures of TRAPATT diode
• The n-type depletion region width varying from 2.5 to 12.5 μm.
• High-peak-power diodes are typically silicon n+ -p-p+ (or p+ -n-n+)
structures.
• The device's p+ region is kept as thin as possible at 2.5 to 7.5 μm.
• The TRAPATT diode's diameter ranges from as small as 50 μm for
CW operation.
• Voltage waveform for the TRAPATT mode of an avalanche p+ -n-n+
diode operating with an assumed square wave shown in Fig.
Principles of Operation TRAPATT diode
• Analytic solutions for the TRAPATT mode in p+ -n-n+ diodes have been
developed by Clorfeine and DeLoach.
• The basic principle of TRAPATT diode is that a high-field avalanche
zone propagates through the diode and fills the depletion layer with a
dense plasma of electrons and holes .
• Then dense plasma of electrons and holes that are trapped in the low-
field region behind the zone .
• At the beginning the electric field is uniform throughout the sample
and its magnitude is large but less than the value required for
avalanche breakdown.
• The current density is expressed by

where , εs is the semiconductor dielectric permittivity of the diode.


Voltage and current waveforms for TRAPATT
diode.
• The electric field can be expressed as

• where NA is the doping concentration of the n region and x is the


distance.
• Thus the value of t at which the electric field reaches Em at a given
distance x into the depletion region is obtained by setting E(x, t) =
Em is given by

Differentiation of the above Eq. with respect to time t results in

where Vz is the avalanche-zone velocity.


• The avalanche zone will quickly sweep across most of the diode and
the transit time of the carriers is represented as

where Vs is the saturated carrier drift velocity and L is


the Length of the specimen

• The transit time calculated here is the time between the


injection and the collection.
• The repeated action increases the output to make it an
amplifier, whereas a microwave low pass filter connected
in shunt with the circuit can make it work as an oscillator.
Power output and efficiency of TRAPATT diode
• RF power is delivered by the diode to an external load when the diode is placed
in a proper circuit with a load.
• The main function of this circuit is to match the diode effective negative
resistance to the load at the output frequency.
• The highest pulse power of 1.2 kW has been obtained at l. l GHz (five diodes in
series)
• The highest efficiency of 75% has been achieved at 0.6 GHz.
• TRAPATT mode generally exhibits a considerably higher noise figure than the
IMPATT mode.
Applications
• Low power Doppler radars
• Local oscillator for radars
• Radio altimeter
• Phased array radar, etc.

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