Scribd
Upload
11 views

lecture 5 - Copy

Chapter 4 of 'Electronic Devices' by Floyd focuses on the Bipolar Junction Transistor (BJT), detailing its structure, which consists of three doped semiconductor regions: emitter, base, and collector. The chapter explains BJT operation, emphasizing the forward and reverse biasing of junctions and the flow of current through the device. Additionally, it covers BJT currents and the definitions of DC beta and DC alpha as measures of current gain in transistors.

Uploaded by

Mona Sayed
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
11 views

lecture 5 - Copy

Chapter 4 of 'Electronic Devices' by Floyd focuses on the Bipolar Junction Transistor (BJT), detailing its structure, which consists of three doped semiconductor regions: emitter, base, and collector. The chapter explains BJT operation, emphasizing the forward and reverse biasing of junctions and the flow of current through the device. Additionally, it covers BJT currents and the definitions of DC beta and DC alpha as measures of current gain in transistors.

Uploaded by

Mona Sayed
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
You are on page 1/ 12

Electronic Devices

Eighth Edition

Floyd

Dr. Mona Sayed

Lecture 5
Chapter 4
Electronics Engineering
Elements course

Chapter 4: Bipolar Junction Transistor


Objective :

To study:
Bipolar junction transistor (BJT) structure
Basic BJT operation

Reference:
Electronic Devices by Floyd
Summary
BJT Structure
The BJT is constructed with three doped semiconductor
regions separated by two pn junctions. The three regions
are called emitter, base, and collector.
The base is a thin
lightly doped region
compared to the C (collector) C

heavily doped emitter


and moderately doped Base-Collector
n p
collector regions. B
junction
p B n
(base) Base-Emitter
The term bipolar refers to the n
junction
p

use of both holes and electrons


as current carriers in
E (emitter) E
the transistor structure.
npn pnp
Summary
BJT Operation
In normal operation, the base-emitter (BE) is forward-
biased and the base-collector (BC) is reverse-biased.

BC reverse-
For the pnp type, the biased
BC reverse-
biased +
voltages are reversed to – –
+
++ –
maintain the forward- +
– –
–
+
reverse bias –
– BE forward- +
biased
BE forward-
+ biased
npn
pnp
Summary
BJT Operation
The heavily doped n-type emitter region has a very high density of conduction-band
(free) electrons. These free electrons easily diffuse through the forward-based BE
junction into the lightly doped and very thin p-type base region. The base has a low
density of holes, which are the majority carriers.
A small percentage of the total number of free electrons injected into the base region
recombine with holes and move as valence electrons through the base region and into
the emitter region as hole current.
When the electrons that have recombined with holes as valence electrons leave the
crystalline structure of the base, they become free electrons in the metallic base lead
and produce the external base current. Most of the free electrons that have entered the
base do not recombine with holes because the base is very thin. As the free electrons
move toward the reverse-biased BC junction, they are swept across into the collector
region by the attraction of the positive collector supply voltage. The free electrons
move through the collector region, into the external circuit, and then return into the
emitter region along with the base current. The emitter current is slightly greater than
.
the collector current because of the small base current that splits off from the total
current injected into the base region from the emitter.
BJT Operation
BJT Operation

.
BJT operation showing electron flow
Summary

BJT Currents

The direction of conventional current is in the direction of the arrow


on the emitter terminal. The emitter current is the sum of the
collector current and the small base current. That is, IE = IC + IB.
+ –
+ –
IC IC
IC IC
n p
IB IB IB IB
+ p + – n –
n p
IE IE
IE IE
– +
– +
npn pnp
Summary
DC Beta ( DC) and DC Alpha ( DC)
The dc current gain of a transistor is the ratio of the dc collector current () to
the dc base current () and is designated dc beta (DC)

DC is usually designated as an equivalent hybrid (h) parameter, , on transistor


datasheets.

The ratio of the dc collector current () to the dc emitter current () is the dc


alpha (DC).
Summary
BJT Circuit Analysis

Transistor currents and


voltages

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy