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PD 91471B

IRG4PC50UD
UltraFast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE
C

Features
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package

VCES = 600V
VCE(on) typ. = 1.65V

@VGE = 15V, IC = 27A

n-ch an nel

Benefits
Generation 4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's

TO-247AC

Absolute Maximum Ratings

Parameter
VCES
IC @ TC = 25C
IC @ TC = 100C
ICM
ILM
IF @ TC = 100C
IFM
VGE
PD @ TC = 25C
PD @ TC = 100C
TJ
TSTG

Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.

Max.

Units

600
55
27
220
220
25
220
20
200
78
-55 to +150

V
W

C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)

Thermal Resistance
Parameter
RJC
RJC
RCS
RJA
Wt

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Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight

Min.

Typ.

Max.

-------------------------

----------0.24
----6 (0.21)

0.64
0.83
-----40
------

Units
C/W

g (oz)

1
12/30/00

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IRG4PC50UD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown VoltageS 600 ------V
VGE = 0V, IC = 250A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---V/C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 1.65 2.0
IC = 27A
VGE = 15V
---- 2.0 ---V
IC = 55A
See Fig. 2, 5
---- 1.6 ---IC = 27A, TJ = 150C
Gate Threshold Voltage
3.0 ---- 6.0
VCE = VGE, IC = 250A
VGE(th)
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/C VCE = VGE, IC = 250A
gfe
Forward Transconductance T
16
24
---S
VCE = 100V, IC = 27A
Zero Gate Voltage Collector Current
------- 250
A
VGE = 0V, VCE = 600V
ICES
------- 6500
VGE = 0V, VCE = 600V, TJ = 150C
VFM
Diode Forward Voltage Drop
---- 1.3 1.7
V
IC = 25A
See Fig. 13
---- 1.2 1.5
IC = 25A, TJ = 150C
IGES
Gate-to-Emitter Leakage Current
------- 100 nA
VGE = 20V
V(BR)CES

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr

Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time

Irr

Diode Peak Reverse Recovery Current

Qrr

Diode Reverse Recovery Charge

di(rec)M/dt

Diode Peak Rate of Fall of Recovery

During tb

Min.
----------------------------------------------------------------------------------

Typ.
180
25
61
46
25
140
74
0.99
0.59
1.58
44
27
240
130
2.3
13
4000
250
52
50
105
4.5
8.0
112
420
250
160

Max. Units
Conditions
270
IC = 27A
38
nC
VCC = 400V
See Fig. 8
90
VGE = 15V
---TJ = 25C
---ns
IC = 27A, VCC = 480V
230
VGE = 15V, RG = 5.0
110
Energy losses include "tail" and
---diode reverse recovery.
---mJ See Fig. 9, 10, 11, 18
1.9
---TJ = 150C, See Fig. 9, 10, 11, 18
---ns
IC = 27A, VCC = 480V
---VGE = 15V, RG = 5.0
---Energy losses include "tail" and
---mJ diode reverse recovery.
---nH
Measured 5mm from package
---VGE = 0V
---pF
VCC = 30V
See Fig. 7
--- = 1.0MHz
75
ns
TJ = 25C See Fig.
160
TJ = 125C
14
IF = 25A
10
A
TJ = 25C See Fig.
15
TJ = 125C
15
VR = 200V
375
nC
TJ = 25C See Fig.
1200
TJ = 125C
16
di/dt 200A/s
---A/s TJ = 25C
---TJ = 125C

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IRG4PC50UD
40
D u ty c ycl e: 5 0%
T J = 1 25 C
T sin k = 90 C
Ga te d rive a s spe cifi ed
Tu rn -on lo sses inclu de
effe cts o f reve rse re cov ery
P o w e r D issipa tion = 4 0 W

Loa d C urre nt (A)

30

6 0 % o f rate d
v o lta g e

20

10

0
0.1

10

100

f, Freq uen cy (kH z)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000

I C , C ollec to r-to-Em itte r C u rre nt (A)

I C , C o lle ctor-to-E m itter Cu rre n t (A )

1000

100

T J = 1 5 0 C

10

T J = 2 5 C
1

VGE = 15V
2 0 s P U L S E W ID T H

0.1
0

A
10

VC E , C o lle c to r-to -E m itte r V o lta g e (V )

Fig. 2 - Typical Output Characteristics

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100

TJ = 1 5 0C

T J = 2 5 C

10

VC C = 1 0 V
5 s P U LS E W ID TH A

1
4

10

12

VG E , G a te -to -E m itte r V o lta g e (V )

Fig. 3 - Typical Transfer Characteristics

3

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IRG4PC50UD
2.5

V G E = 15 V

V CE , C olle ctor-to-E m itte r V oltage (V)

M aximum D C Collector Current (A )

60

50

40

30

20

10

0
25

50

75

100

125

IC = 5 4 A
2.0

IC = 2 7 A
1.5

IC = 14 A

1.0

150

-60

T C , C ase Tem perature (C)

Fig. 4 - Maximum Collector Current vs.

Temperature

V G E = 1 5V
8 0 s P U L S E W ID TH

-40

-20

20

40

60

80

100 120

140 160

T J , Ju n c tio n Te m p e ra tu re (C )

Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

T h e rm a l R e s p o n se (Z thJ C )

D = 0 .5 0

0 .2 0

0 .1
0 .1 0

PD M

0 .0 5

t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )

0 .0 2

t2
N ote s :
1 . D u ty f ac t or D = t

0 .0 1

0 .0 1
0 .0 0 0 0 1

/t

2 . P e a k TJ = P D M x Z th J C + T C

0 .0 0 0 1

0 .0 0 1

0 .0 1

0 .1

10

t 1 , R e c ta n g u la r P u ls e D ura tio n (s e c )

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

4

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IRG4PC50UD
20

V GE
C ie s
C re s
C oes

6000

=
=
=
=

0V ,
f = 1M Hz
C ge + C gc , C ce SH O R TED
C gc
C ce + C gc

V G E , Gate-to-Emitter Voltage (V)

C, Capacitance (pF)

8000

C ie s

4000

C oes
2000

C res

0
1

10

VC E = 400V
I C = 27A

16

12

0
0

100

40

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

2.5

2.0

1.5

1.0
10

20

30

40

R G , G a te R e s is ta n c e (

50

Fig. 9 - Typical Switching Losses vs. Gate

Resistance
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200

10

= 480V
= 15V
= 2 5 C
= 27A

160

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Total Switching Losses (mJ)

T ota l S w itching Loss es (m J)

VCC
VGE
TJ
IC

120

Q g , Total Gate Charge (nC)

V C E , C o lle c to r-to -E m itte r V o lta g e (V )

3.0

80

60

I C = 54A

I C = 27A
1

I C = 14A

0.1

RG = 5.0
VG E = 15V
VC C = 480V
-60

-40

-20

A
20

40

60

80

100

120

140

160

TJ , Junction Temperature (C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature
5

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IRG4PC50UD
1000

= 5 .0
= 1 5 0 C
= 480V
= 15V

I C , Collector-to-E m itter C urrent (A)

RG
TJ
V CC
V GE

6.0

4.0

2.0

0.0
0

10

20

30

40

50

VGGE E= 2 0V
T J = 125 C

S A FE O P E R A TIN G A R E A

100

10

60

I C , C o lle c to r-to-E m itte r C u rre n t (A )

10

100

1000

V C E , Collecto r-to-E m itter V oltage (V )

Fig. 12 - Turn-Off SOA

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current
100

In sta n ta n e o u s F o rw a rd C u rre n t - I F (A )

T otal Sw itch ing Los ses (m J )

8.0

TJ = 1 50 C
TJ = 1 25 C
10

TJ = 25 C

1
0.6

1.0

1.4

1.8

2.2

2.6

F o rw a rd V o lta g e D ro p - V FM (V )

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

6

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IRG4PC50UD
100

140

VR = 2 0 0 V
T J = 1 2 5 C
T J = 2 5 C

VR = 2 0 0 V
TJ = 125C
TJ = 25C

120

I IR R M - (A )

t rr - (ns)

100

I F = 50A

80

I F = 25A

I F = 5 0A
I F = 2 5A
10

I F = 10 A

IF = 10A

60

40

20
100

1
100

1000

di f /dt - (A/s)

1000

d i f /d t - (A / s)

Fig. 14 - Typical Reverse Recovery vs. dif/dt

Fig. 15 - Typical Recovery Current vs. dif/dt

1500

10000

VR = 2 0 0 V
T J = 1 2 5 C
T J = 2 5 C

VR = 2 0 0 V
T J = 1 2 5 C
T J = 2 5 C

di(rec)M/dt - (A / s)

Q R R - (n C )

1200

900

I F = 5 0A

600

I F = 2 5A

1000

I F = 10 A

I F = 25 A
300

I F = 1 0A
0
100

d i f /d t - (A / s )

Fig. 16 - Typical Stored Charge vs. dif/dt

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I F = 5 0A
1000

100
100

1000

di f /dt - (A /s)

Fig. 17 - Typical di(rec)M/dt vs. dif/dt

7

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IRG4PC50UD
90% Vge
+Vge

Same ty pe
device as
D .U.T.

Vce

Ic

9 0 % Ic

10% Vce
Ic

5 % Ic

430F

80%
of Vce

D .U .T.
td (o ff)

tf

Eoff =

t1 + 5 S
V c e ic d t
t1

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1

t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

G A T E V O L T A G E D .U .T .
1 0 % +V g

trr

Q rr =

Ic

trr
id d t
tx

+Vg
tx
10% Vcc

1 0 % Irr
V cc

D UT VO LTAG E
AN D CU RRE NT

Vce

V pk
Irr

Vcc

1 0 % Ic

Ip k

9 0 % Ic

Ic
D IO D E R E C O V E R Y
W A V E FO R M S

tr

td (o n )

5% Vce

t1

t2
E o n = V ce ie d t
t1
t2

E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, td(on), tr

t4
V d id d t
t3

t4

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining Erec, trr, Qrr, Irr

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IRG4PC50UD

V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .

V O L T A G E IN D .U .T .

C U R R E N T IN D 1

t0

t1

t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L
1000V

D.U.T.
Vc*

RL=

480V
4 X IC @25C

0 - 480V

50V
6000 F
100 V

Figure 19. Clamped Inductive Load Test

Circuit

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Figure 20. Pulsed Collector Current

Test Circuit

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IRG4PC50UD
Notes:

Q Repetitive rating: VGE = 20V; pulse width limited by maximum junction temperature
(figure 20)
R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0 (figure 19)
S Pulse width 80s; duty factor 0.1%.
T Pulse width 5.0s, single shot.

Case Outline TO-247AC

3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
0 .2 5 ( .0 1 0 )

1 5 .9 0 (.6 2 6 )
1 5 .3 0 (.6 0 2 )
-B-

-D-

D B M

-A5 .5 0 (.2 17 )

2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 )

2X

5 .3 0 (.2 0 9 )
4 .7 0 (.1 8 5 )
2.5 0 ( .0 8 9)
1.5 0 ( .0 5 9)
4

5.5 0 (.2 1 7)
4.5 0 (.1 7 7)

LEAD
1234-

3
-C-

1 4 .8 0 (.5 8 3 )
1 4 .2 0 (.5 5 9 )

2 .4 0 (.0 9 4 )
2 .0 0 (.0 7 9 )
2X
5 .4 5 (.2 1 5 )
2X

4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )

3X

1 .4 0 ( .0 56 )
1 .0 0 ( .0 39 )
0.2 5 (.0 1 0 ) M

3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )

NOTE S:
1 D IM E N S IO N S & T O LE R A N C IN G
P E R A N S I Y 14 .5M , 1 98 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M IL LIM E T E R S (IN C H E S ).
4 C O N F O R M S T O J E D E C O U T L IN E
T O -2 4 7A C .

A S S IG N M E N T S
GAT E
COLLECTO R
E M IT T E R
COLLECTO R

LO N G E R LE A D E D (2 0m m )
V E R S IO N A V A IL A B L E (T O -2 47 A D )
T O O R D E R A D D "-E " S U F F IX
TO PAR T NUM BER

0 .8 0 (.0 3 1 )
0 .4 0 (.0 1 6 )
2 .6 0 ( .1 0 2 )
2 .2 0 ( .0 8 7 )

3X
C A S

CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC (T O -3P)

D im e n s io n s in M illim e te rs a n d (In c h e s )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00

10

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