EE3408E Project Design A Two-Stage Operational Amplifier
EE3408E Project Design A Two-Stage Operational Amplifier
EE3408E Project Design A Two-Stage Operational Amplifier
The circuit set up for nMOSFET is given in Fig. 1. The maximum voltage for both VDS
and VGS is 3V. Note that the channel length modulation coefficient is a function of
channel length. The minimum allowed channel length is 0.35m in this technology. For
analog design, relatively long channel length is preferred as long channel length has (1)
high output resistance and (2) less impact by process variation (L). However do
remember that long channel length results in large transistor size and hence more silicon
area and large parasitic capacitance. In this part, choose W=20m and L=1m.
Please list the extracted parameters in a table and include the necessary plots, data and
calculation in your report. The extracted parameters can be used later in sub-project 2
and 3 for hand calculation.
ID
VDS
VGS
VBS
3 V (Single supply)
> 50
> 1.2 Vp-p
4) DC output voltage:
5) Supply current:
6) Maximum channel width:
~ 1.5 V
< 500 A
500 m
VDD
RB
Vin
M1
Vout
M2
M3
VB
Vin
M1
M2
Vout
M3
M4
3 V (Single supply)
> 50 dB (within the full common-mode range)
> 50 dB
> 200 mVp-p
< 2 mV
< 300 A
1000m
second stage. Frequency compensation needs to be applied to meet the bandwidth and
phase margin requirements.
Specifications (100%):
1) Supply voltage:
2) Open-loop DC gain:
3) Gain peaking:
4) Unity gain bandwidth:
5) Phase Margin:
6) CMRR :
7) Output voltage swing:
8) Offset voltage:
9) Supply current:
10) Output load capacitance:
11) Maximum channel width:
3 V (Single supply)
> 72 dB
< 3 dB (ratio of maximum gain to gain at DC)
> 18 MHz
> 60 degree
> 70 dB
> 1.0 V (Peak-to-Peak)
< 2m V
< 600 A
0.3 pF
1000m
Notes:
Only one DC voltage source is allowed, that is, the VDD. The bias current or voltage
required for op-amp must be generated from VDD.