40N06 PDF

SUD40N06-25L
Vishay Siliconix
N-Channel 60-V (D-S), 175C MOSFET, Logic Level

rDS(on) ()
ID (A)a
0.022 @ VGS = 10 V
30
0.025 @ VGS = 4.5 V
30
VDS (V)
60
TO-252
G
Drain Connected to Tab
G
Top View
S
Order Number:
SUD40N06-25L
N-Channel MOSFET

Parameter
Gate-Source Voltage
TC = 25C
Continuous Drain Current (TJ = 175C)b
TC = 100C
Pulsed Drain Current

Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle 1%)
L = 0.1 mH
TC = 25C
Maximum Power Dissipation
TA = 25C
Operating Junction and Storage Temperature Range
Symbol
Limit
Unit
VGS
20
ID
30
30
IDM
100
IS
34
IAR
34
EAR
58
PD
75
1.4b, 2.5c
TJ, Tstg
55 to 175
Symbol
Limit
mJ
W
C

Parameter
Free Air, FR4 Board Mount
Maximum Junction-to-Ambient
Free Air, Vertical Mount
Maximum Junction-to-Case
Unit
60
RthJA
RthJC
110
C/W
2.0
Notes:
a. Package limited.
b. Free air, vertical mount.
c. Surface mounted on 1 x 1 FR4 Board, t 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70264
S-57741Rev. G, 31-Mar-98
www.vishay.com FaxBack 408-970-5600
2-1
SUD40N06-25L
Vishay Siliconix

Parameter
Typa
Max
2.0
3.0
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
VGS(th)
VDS = VGS, ID = 250 mA
1.0
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V

VDS = 60 V, VGS = 0 V
Zero
Gate
Voltage
Drain
Z
G
V l
D i Current
C
IDSS
VDS = 60 V, VGS = 0 V, TJ = 125C
50
VDS = 60 V, VGS = 0 V, TJ = 175C
150
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
On-State Drain Currentb
b
D i Source
S
O State
S
R i
Drain-Source
Drain
On
On-State
Resistance
Forward Transconductanceb
ID(on)
rDS(on)
DS( )
gfs
VDS = 5 V, VGS = 10 V
V
"100
20
nA
mA
A
VGS = 10 V, ID = 20 A
0.022
VGS = 10 V, ID = 20 A, TJ = 125C
0.043
VGS = 10 V, ID = 20 A, TJ = 175C
0.053
VGS = 4.5 V, ID = 20 A
0.025
VDS = 15 V, ID = 20 A
Dynamic
Input Capacitance
Ciss
1800
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
100
Total Gate Chargec
Qg
40
VGS = 0 V,
V VDS = 25 V
V, f = 1 MH
MHz
pF
F
350
60
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
10
Turn-On Delay Timec
td(on)
10
20
tr
20
28
50
15
Rise Timec
Turn-Off Delay Timec
Fall Timec
td(off)
VDS = 30 V
V, VGS = 10 V
V, ID = 40 A
VDD = 30 V
V,, RL = 0
0.9
9W
ID^ 20 A,
A VGEN = 10 V
V, RG = 2
2.5
5W
tf
nC
C
ns
Source-Drain Diode Ratings and Characteristics (TC = 25C)

Pulsed Current
ISM
20
Diode Forward Voltage
VSD
IF = 20 A, VGS = 0 V
1.0
1.5
Reverse Recovery Time
trr
IF = 20 A, di/dt = 100 A/ms
48
100
ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
2-2

S-57741Rev. G, 31-Mar-98
SUD40N06-25L
Vishay Siliconix

Output Characteristics
Transfer Characteristics
60
100
6V
5V
VGS = 10, 9, 8, 7 V
80
I D Drain Current (A)
45
60
4V
40
20
30
TC = 125C
15
3V
25C
55C
0
0
10
VDS Drain-to-Source Voltage (V)
VGS Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current

0.04
70
TC = 55C
50
r DS(on) On-Resistance ( )
g fs Transconductance (S)
60
25C
125C
40
30
20
10
0
0.03
VGS = 4.5 V
VGS = 10 V
0.02
0.01
0
0
12
24
36
48
60
15
ID Drain Current (A)
45
60
ID Drain Current (A)
Capacitance
Gate Charge
10
3000
V GS Gate-to-Source Voltage (V)
2500
C Capacitance (pF)
30
Ciss
2000
1500
1000
Coss
500
Crss
VDS = 30 V
ID = 20 A
0
0
10
20
30
40
50

S-57741Rev. G, 31-Mar-98
60
10
20
30
40
50
Qg Total Gate Charge (nC)
2-3
SUD40N06-25L
Vishay Siliconix

On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
100
2.0
I S Source Current (A)
r DS(on) On-Resistance ( )
(Normalized)
VGS = 10 V
ID = 20 A
1.5
1.0
TJ = 150C
TJ = 25C
10
0.5
0
50
1
25
25
50
75
100
125
150
175
0.3
TJ Junction Temperature (C)
0.6
0.9
1.2
1.5
VSD Source-to-Drain Voltage (V)

Drain Current vs. Case Temperature
Safe Operating Area

200
50
100
Limited
by rDS(on)
40
30
20
100 ms
10
1 ms
10 ms
1
100 ms
dc, 1 s
TC = 25C
Single Pulse
10
0
0
25
50
75
100
125
150
0.1
175
0.1
TC Case Temperature (C)
10
100
Normalized Thermal Transient Impedance, Junction-to-Case

2
Normalized Effective Transient

Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
104
103
102
101
Square Wave Pulse Duration (sec)

2-4

S-57741Rev. G, 31-Mar-98

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SUD40N06-25L

N-Channel 60-V (D-S), 175C MOSFET, Logic Level

0.025 @ VGS = 4.5 V

           

Continuous Drain Current (TJ = 175C)b

Pulsed Drain Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

     

www.vishay.com FaxBack 408-970-5600

VDS = VGS, ID = 250 mA

VDS = 0 V, VGS = "20 V

VDS = 60 V, VGS = 0 V, TJ = 125C

VDS = 60 V, VGS = 0 V, TJ = 175C

On-State Drain Currentb

Reverse Transfer Capacitance

Total Gate Chargec

Turn-On Delay Timec

Source-Drain Diode Ratings and Characteristics (TC = 25C)

Diode Forward Voltage

Reverse Recovery Time

IF = 20 A, di/dt = 100 A/ms

www.vishay.com FaxBack 408-970-5600

Document Number: 70264

I D Drain Current (A)

I D Drain Current (A)

VDS Drain-to-Source Voltage (V)

VGS Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

ID Drain Current (A)

ID Drain Current (A)

V GS Gate-to-Source Voltage (V)

VDS Drain-to-Source Voltage (V)

Document Number: 70264

Qg Total Gate Charge (nC)

www.vishay.com FaxBack 408-970-5600

Source-Drain Diode Forward Voltage

TJ Junction Temperature (C)

VSD Source-to-Drain Voltage (V)

Safe Operating Area

I D Drain Current (A)

I D Drain Current (A)

TC Case Temperature (C)

VDS Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

Normalized Effective Transient

Duty Cycle = 0.5

Square Wave Pulse Duration (sec)

Document Number: 70264

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