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Electronics June 2012

This document appears to be an exam for a Basic Electronics course, consisting of multiple choice and written answer questions. It covers several topics in electronics including: - Diode characteristics and applications - Transistor configurations and biasing circuits - Operational amplifiers - Oscillators - Number systems and digital logic The exam is divided into two parts (A and B) with Part A focusing more on analog electronics and Part B focusing more on digital electronics and logic gates. It contains a variety of question types intended to test students' understanding of fundamental electronics concepts.

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bkvuvce8170
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© © All Rights Reserved
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Available Formats
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0% found this document useful (0 votes)
38 views

Electronics June 2012

This document appears to be an exam for a Basic Electronics course, consisting of multiple choice and written answer questions. It covers several topics in electronics including: - Diode characteristics and applications - Transistor configurations and biasing circuits - Operational amplifiers - Oscillators - Number systems and digital logic The exam is divided into two parts (A and B) with Part A focusing more on analog electronics and Part B focusing more on digital electronics and logic gates. It contains a variety of question types intended to test students' understanding of fundamental electronics concepts.

Uploaded by

bkvuvce8170
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

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10ELN15/25

First/Second Semester B.E. Degree Examination, June 2Ol2

Basic Electronics
o
o
o
6
o.

Time: 3 hrs.
Note:

E
cd

Max. Marks:100

1. Answer ony FIVE full questions, choosing at least two from each part,
2. Answer all objective type questions only on OMR sheet page 5 of the onswer booklet.
3. Answer to ob.jective fiipe questions on sheets other than OMR will not be valued.

na

I a.

PART _ A
Choose your answers for the following :
Zener diode can be used for rectification. This statement is

A) True
C) Niether

B) False
D) None of these
True Nor False
PIV in case of half wave rectifier for an input signal of V- sin wt

:r^

-o l'll
ao

troo

.E c\

ii)

tso
ug
FO

b.

A,i,

D)5
\IL

If frequency of input

iv)

If peak to peak voltage


A) J7 votts

=L

o..
oi

c)&
iiD

oO

!o
9=

B) 2V,"

a2

!6

A)V
/m

a=

c.

A) 30 Hz
C) 120 Hz

is

is 60 Hz for a fullwave rectifier, the frequency of ripple is


B) 60 Hz

D) 180 Hz
is 4 V then RMS voltage is
B) 2 Volts

C)

2.82 Volts
D) Both (A) and (C).
for
Calculate the reverse saturation current
silicon diode which passes a current of l0 mA at
(04 Marks)
27"C, for a forward bias of 700 mV.
Explain the effect of temperature on the diode characteristics and also on the power rating of
the

d.

(04 Marks)

diode.

(06 Marks)

Explain the operation

waveforms.

of full wave

center tap rectifier with neat circuit diagram and


(06 Marks)

!o

5.v
x!

ao-OIJ
tr
'nc
6=
tr>
=u
5!

2 a.

a3

i)

ii)

(r<
-i

Choose your answers for the following

Bipolar junction transistor is


A) Voltage
C) Power
Operating point must be

A)

c.i

C)

(04 Marks)

controlled device.
B) Current

D)
f,or proper

B) Decreasing
D) High

Increasing
Stable

iii) The DC load line of a transistor

is a

A)

o
iv)

C)
b.

B) '-ve' slope line


D) Zero slope line

Curved line
C) '+'slope line
In a transistor cr and B are related by

A)' a=

B) o=

1-B

1+B

D)l

B=.L
l+cx.

Explain the characteristics

Temperature

functioning of transistor.

l-cr

of

common base transistor configuration with neat circuit

diagram.

(08 Marks)

I of4

vtuplanet.com
108LN15i25

c.
d.

What is a d.c. load line? Explain with a fixed bias circuit diagram.
For the fixed bias circuit shown in Fig. Q2 (d), Ves : 0.7 V, B : 60, find

i)

ii)
iii)
iv)

Quiescent values of base


and collector currents.
Quiescent value of Vcs.
Base-ground and collectorground voltages.
Base-collector voltage.

Fig. Q2 (d)

3a.

(04 Marks)

Choose your answers for the following :


D [n voltage divider bias circuit RE is used for

(04 Marks)
(04 Marks)

A) Stabilization

ii)
iii)

iv)
b.
c.

d.

B) As a load
D) All of these
For exact analysis of voltage divider bias circuit
theorem is used.
A) Nortons
B) Thevenins
C) Superposition
D) Any one of these
is the linear region of transistor characteristics.
A) Saturation
B) Cutoff
C) Active
D) Both (A) and (C)
Stability factor of fixed bias circuit is,

C)

As a bypass

element

A)p

B)

p-l

C) 1+0

D)

None of these

List the factors which affect the stability of operating point.


(04 Marks)
With a neat circuit diagram, explain voltage divider biasing circuit and derive the expressions
for Vca and Ic using exact analysis.
(08 Marks)
:
(d),
For the circuit shown in Fig. Q3
using silicon transistor with Vee 0.7 V and B : 80,
find Vcr and Vs.
(04 Marks)
l1v

1'6v
2.+v

Fig. Q3 (d)

4a.

Choose your answers for the following :


D The device which has wide application in pulse generator is

A) FET

ii)
iiD

iv)

C)

B) BJT
D) UJT

Diode

FET is _controlled device.


A) Current
C) Power
The device which is known as Thyristor is
A) Diode
C) Transistor
In FET the gate source junction is
A) Forward biased

C)

Unbiased

2of4

B) Voltage
D) Temperature

B) FET
D) SCR
B) Reverse biased
D) None of these

(04 Marks)

10ELN15/25

4b.
c.

5 a.

Explain the working of FET with neat circuit diagram and relevant characteristics. Indicate
(08 Marks)
each region of the characteristics.
Explain the working of UJT with neat circuit diagram. Indicate all regions in the

characteristics.

(08 Marks)

PART - B
(04 Marks)
Choose your answers for the following :
i) The coupling capacitors in RC coupled amplifier affect _
frequency response.
A) Low
B) High
C) Veryhigh
D) Above l00kHz.
iD The frequency at which oscillator will operate is the frequency for which the phase
shift of the loop gain is
A) 0'
B) 360'
c) 180'
D) Both (A) and (B).
iii) In an oscillator the phase shift produced by amplifier is

A) 0'

iv)

b.

c)

B) 180"
D) 270"

90"

The oscillator used to generate oscillations in audio frequency range is


A) LC oscillator
B) RC oscillator
C) Crystaloscillator
D) Both (B) and (C)
Explain the working of RC phase shift oscillator with neat circuit diagram and waveforms at
(08 Marks)
(04 Marks)

each stage.

c.
d.
6 a.

List the effects ofnegative feedback.


In a transistor Hartley oscillator, Lr : 10 LrH, L:
oscillating frequency of 150 kHz. Take M : 0.
Choose your answers for the following

i)

An op-amp has

A)*
i)
iiD

c)

b.
c.
d.

10 ;.rH. Find the value

of C required for an
(04 Marks)
(04 Marks)

o/p impedance.

B)0

D)

garn.
Voltage follower has
A) High
C) Unity
An op-amp non-inverting amplifier has Rr
output is _

A)

iv)

10000

-4V

c) 8v

600

B) Low
D) None of these
1

kO and

Rr: 3 kf,

when Vi

B) 4V
D) -8V

-2 V, the

Op-amp configuration used as buffer is


A) Inverting amplifier
B) Non inverting amplifier
C) Voltage lollower
D) Adder
(08 Marks)
List the characteristics of ideal op-amp and practical op-amp.
The input to the op-amp shown in Fig. Q6 (c), at the non inverting terminal is l0sin10t
Volts. Draw the output waveform indicating time period and maximum value. (04 Marks)
(04 Marks)
Find the output of the op-amp circuit shown in Fig. Q6 (d).
Vo

-6V

t5'J

f'/
Fig. Q6 (c)

Fig. Q6 (d)

3of4

tOELN15/25

7 a.

Choose your answers for the following


(100),0 = (?),u

(04 Marks)

A)

ii)
iiD

c)

46

number of 1's.
B) 4
D) J

75 in binary contains

A)8

c)6

(16), =(?),0

A)

iv)

B) t44
D) 80

64

c)

B) 20
D) 25

18
14

(ABC),6 = (?),0
A) 3000
c) 2748
Perform the following:
D (l0l1l0), =(?)s

iD
iiD
iv)
v)

(110011

), -

B)
D)

4230

22s0

= 1:;, using 2's complement method.


(5FFl)r6 = (?),u using 15's complement method.

(11001

),

(El042)16 (77721)8-rc6$2)8 = (?), using 7's complement method.

(?)*.
the need for modulation.

(2384)rc =

(05 Marks)

c.

Explain

d.

Explain the working of super heterodyne receiver with neat circuit diagram and waveforms
at each

8 a.

(05 Marks)

stage.

(06 Marks)

Choose your answers for the following :


D The EX-OR gate in which one input is connected to Vcc, operates as

A)

ii)

c)

The gate whose output is zero only when both the inputs are high is

c) oR
iiD e+ee+A
A)A

b.
c.

gate.

B) NOR
D) AND
is

B)B
D) A+B

C) A+B
Universal gates are,

A) NAND and NOR


C) OR and NOR

B) AND and NAND


D) NOR and EX-OR

What is half adder and implement it using universal gates?


Simplify and realize the Boolean expressions, using two i/p NAND gates only.

i)
ii)
iii)

gate.

B) OR
D) NOr

AND
NoR

A) NAND

iv)

(04 Marks)

(06 Marks)

ABCD+ aeCO
AB + ABC + ABC + nSC

ABCD+aeCO+ABD

(10 Marks)

?k ,( ,( ,( ,(

vtuplanet.com
4of4

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