Advanced Power

Electronics Corp. AP9973GH/J-HF-3

N-channel Enhancement-mode Power MOSFET

Simple Drive Requirement

D
Supports 4.5V Logic-level Gate Drive BV DSS 60V
Low Gate Charge R DS(ON) 80m
G
RoHS-compliant, halogen-free ID 14A
S

Description D (tab)

G
Advanced Power MOSFETs from APEC provide the designer with the best D
S TO-252 (H)
combination of fast switching, low on-resistance and cost-effectiveness.
The AP9973GH-HF-3 is in the TO-252 package which is widely preferred for
commercial and industrial surface mount applications such as medium-power
DC/DC converters. The through-hole TO-251 version (AP9973GJ-HF-3) is D (tab)
available where a small PCB footprint is required.
G
D
S TO-251 (J)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage 20 V
3
ID at TA=25C Continuous Drain Current 14 A
3
ID at TA=100C Continuous Drain Current 9 A
1
IDM Pulsed Drain Current 40 A
PD at TA=25C Total Power Dissipation 27 W
Linear Derating Factor 0.22 W/C
TSTG Storage Temperature Range -55 to 150 C
TJ Operating Junction Temperature Range -55 to 150 C

Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 4.5 C/W
Rthj-a Maximum Thermal Resistance, Junction-ambient3 62.5 C/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 C/W

Ordering Information
AP9973GH-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel)

AP9973GJ-HF-3TB : in RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube)

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 Advanced Power
Electronics Corp. AP9973GH/J-HF-3
Electrical Specifications at Tj=25C (unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
BV DSS / Tj Breakdown Voltage Temperature Coefficient Reference to 25C, ID=1mA - 0.05 - V/C
2
RDS(ON) Static Drain-Source On-Resistance VGS= 10V, ID= 9A - - 80 m
VGS= 4.5V, ID= 6A - - 100 m
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=9A - 14 - S
IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=125 C) VDS=48V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=20V - - 100 nA
2
Qg Total Gate Charge ID= 9A - 8 13 nC
Qgs Gate-Source Charge VDS=48V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC
2
td(on) Turn-on Delay Time VDS=30V - 7 - ns
tr Rise Time ID= 9A - 15 - ns
td(off) Turn-off Delay Time RG=3.3 , VGS= 10V - 16 - ns
tf Fall Time RD= 3.3 - 3 - ns
Ciss Input Capacitance VGS=0V - 720 1150 pF
Coss Output Capacitance VDS=25V - 77 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS= 14A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS= 9A, VGS=0V - 28 - ns
Qrr Reverse Recovery Charge dI/dt=100A/s - 27 - nC

Notes:
1.Pulse width limited by safe operating area
2.Pulse test - pulse width < 300s , duty cycle < 2%
2
3.Surface mounted on 1 in copper pad of FR4 board,

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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 Advanced Power
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Typical Electrical Characteristics
45 32

o T C =150 o C 10V
40 T C =25 C 28
10V 7.0V
35 7.0V 5.0V

ID , Drain Current (A)

ID , Drain Current (A)

24
5.0V 4.5V
30
4.5V
20

25

16

20

12
15

8
V G =3.0V
10
V G =3.0V
4
5

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6 7

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

90 2.5

ID=9A I D =9A
T C =25 o C
85 2.0 V G =10V
Normalized RDS(ON)
RDS(ON) (m)

80 1.5

75 1.0

70 0.5

65 0.0
3 5 7 9 11 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)

o

Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance

vs. Junction Temperature
14 2.4

12

10
VGS(th) (V)

1.6
IS(A)

8
T j =150 o C T j =25 o C
6
1.2

0.8

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( C) o

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

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 Advanced Power
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Typical Electrical Characteristics (cont.)
f=1.0MHz
12 10000

ID=9A
10
VGS , Gate to Source Voltage (V)

V DS = 30V
8 1000
V DS = 38 V Ciss

C (pF)
V DS = 48 V
6

4 100

Coss

2
Crss

0 10
0 4 8 12 16 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthjc)

Duty factor=0.5

1ms
10 0.2
ID (A)

0.1

0.1
10ms 0.05

PDM

1 100ms 0.02
t

1s 0.01
T

T C =25 o C DC Single Pulse

Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse

0.1 0.01
0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V

QGS QGD

10%
VGS

td(on) tr td(off)tf Charge Q

Fig 11. Switching Time Waveforms Fig 12. Gate Charge Waveform

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 Advanced Power
Electronics Corp. AP9973GH/J-HF-3
Package Dimensions: TO-252

D Millimeters
SYMBOLS
MIN NOM MAX
D1 A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
E2 D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
E1 F1 0.50 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65

B1 F1 F

e e 1. All dimensions are in millimeters.

2. Dimensions do not include mold protrusions.

A2 R : 0.127~0.381

A3 (0.1mm C

Marking Information:
Laser Marking
Product: AP9973

Package code
GH = RoHS-compliant halogen-free TO-252
9973GH

YWWSSS Date/lot code (YWWSSS)

Y: Last digit of the year
WW: Work week
SSS: Lot code sequence

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 Advanced Power
Electronics Corp. AP9973GH/J-HF-3
Package Dimensions: TO-251

D Millimeters
A SYMBOLS
c1 MIN NOM MAX
D1 A 2.20 2.30 2.40
E2 A1 0.90 1.20 1.50
B1 0.40 0.60 0.80
B2 0.60 0.85 1.05
E1 E
c 0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 4.80 5.20 5.50
A1
E 6.70 7.00 7.30
B2
E1 5.40 5.60 5.80
F E2 1.30 1.50 1.70
B1
e ---- 2.30 ----
F 7.00 8.30 9.60

c 1. All dimensions are in millimeters.

2. Dimensions do not include mold protrusions.
e e

Marking Information:

Product: AP9973
Package Code
9973GJ
GJ = RoHS-compliant halogen-free TO-251
YWWSSS Date Code (YWWSSS)
Y : Last digit of the year
WW : Work week
SSS : Lot code sequence

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