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BU4522AF

This document provides product specifications for the BU4522AF silicon NPN power transistor from INCHANGE Semiconductor. It is designed for use in horizontal deflection circuits of color TVs and computer monitors. Key specifications include an 800V minimum collector-emitter sustaining voltage, high switching speed, and maximum current and power ratings of 25A peak collector current and 45W collector power dissipation. Thermal and electrical characteristics are also listed such as a junction to case thermal resistance of 2.8°C/W and saturation voltages below 3V at 7A collector current.

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437 views

BU4522AF

This document provides product specifications for the BU4522AF silicon NPN power transistor from INCHANGE Semiconductor. It is designed for use in horizontal deflection circuits of color TVs and computer monitors. Key specifications include an 800V minimum collector-emitter sustaining voltage, high switching speed, and maximum current and power ratings of 25A peak collector current and 45W collector power dissipation. Thermal and electrical characteristics are also listed such as a junction to case thermal resistance of 2.8°C/W and saturation voltages below 3V at 7A collector current.

Uploaded by

ds_engenharia8817
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor BU4522AF

DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min)
·High Switching Speed

APPLICATIONS
·Designed for use in horizontal deflection circuits of
color TV receivers and PC monitors.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCES Collector- Emitter Voltage(VBE= 0) 1500 V

VCEO Collector-Emitter Voltage 800 V

VEBO Emitter-Base Voltage 7.5 V

IC Collector Current- Continuous 10 A

ICM Collector Current-Peak 25 A

IB Base Current- Continuous 6 A

IBM Base Current-Peak 9 A

Collector Power Dissipation


PC 45 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W

isc website：www.iscsemi.cn 1
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor BU4522AF

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.75A 3.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.75A 1.03 V

VCE= 1500V; VBE= 0 1.0


ICES Collector Cutoff Current mA
VCE= 1500V; VBE= 0; TC=125℃ 2.0

IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 1.0 mA

hFE-1 DC Current Gain IC= 1A; VCE= 5V 10

hFE-2 DC Current Gain IC= 7A; VCE= 5V 4.2 7.3

Switching times (16kHz line deflection circuit)

tstg Storage Time 4.3 μs


IC= 7A, IB1= 1.4A; IB2= -3.5A;
f= 16kHz
tf Fall Time 0.4 μs

isc website：www.iscsemi.cn 2

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