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    RM50HG 12S

    Uploaded by

    Abu Bakr M. Saeed
    This document provides specifications for the Mitsubishi RM50HG-12S fast recovery diode module. Key specifications include: 1) It has a maximum repetitive reverse voltage of 600V and reverse DC voltage of 480V. 2) It has a DC current rating of 50A at an operating temperature of 80°C. 3) It has a very low reverse recovery time of 0.2 microseconds, making it suitable for high-speed switching applications.

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    RM50HG 12S

    Uploaded by

    Abu Bakr M. Saeed
    41 views3 pages
    This document provides specifications for the Mitsubishi RM50HG-12S fast recovery diode module. Key specifications include: 1) It has a maximum repetitive reverse voltage of 600V and reverse DC voltage of 480V. 2) It has a DC current rating of 50A at an operating temperature of 80°C. 3) It has a very low reverse recovery time of 0.2 microseconds, making it suitable for high-speed switching applications.

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    This document provides specifications for the Mitsubishi RM50HG-12S fast recovery diode module. Key specifications include: 1) It has a maximum repetitive reverse voltage of 600V and reverse DC voltage of 480V. 2) It has a DC current rating of 50A at an operating temperature of 80°C. 3) It has a very low reverse recovery time of 0.2 microseconds, making it suitable for high-speed switching applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    41 views3 pages

    RM50HG 12S

    Uploaded by

    Abu Bakr M. Saeed
    This document provides specifications for the Mitsubishi RM50HG-12S fast recovery diode module. Key specifications include: 1) It has a maximum repetitive reverse voltage of 600V and reverse DC voltage of 480V. 2) It has a DC current rating of 50A at an operating temperature of 80°C. 3) It has a very low reverse recovery time of 0.2 microseconds, making it suitable for high-speed switching applications.

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    MITSUBISHI FAST RECOVERY DIODE MODULES

    RM50HG-12S
    HIGH SPEED SWITCHING USE
    NON-INSULATED TYPE

    RM50HG-12S

    • IDC DC current .................................. 50A


    • VRRM Repetitive peak reverse voltage
    ................ 600V
    • trr Reverse recovery time ............. 0.2µs
    • ONE ARM
    • Non-Insulated Type

    APPLICATION
    For snubber circuit (IPM or IGBT module)

    OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

    20.5MAX. φ3.2±0.2 5±0.3


    6±0.2

    Non-Isolation side (metal) 4


    26±0.5
    2.5

    1 2
    3 4
    2.5±0.3
    20MIN.

    1 2 3

    1±0.2 2±0.3
    0.6±0.2
    5.45±0.5 5.45±0.5
    3±0.3

    Sep.2001
    MITSUBISHI FAST RECOVERY DIODE MODULES

    RM50HG-12S
    HIGH SPEED SWITCHING USE
    NON-INSULATED TYPE

    ABSOLUTE MAXIMUM RATINGS (Tj=25°C)

    Voltage class
    Symbol Parameter Unit
    12
    VRRM Repetitive peak reverse voltage 600 V
    VR (DC) Reverse DC voltage 480 V

    Symbol Parameter Conditions Ratings Unit


    IDC DC current Resistive load, TC=80°C ➀, ➂ Collective of terminal 50 A
    IFSM Surge (non-repetitive) forward current One half cycle at 60Hz, peak value ➀, ➂ Collective of terminal 1000 A
    I2t I2t for fusing Value for one cycle surge current — A2s
    Tj Junction temperature –40~+150 °C
    Tstg Storage temperature –40~+125 °C
    Viso Isolation voltage Charged part to case — V
    0.59~0.98 N·m
    — Mounting torque Mounting screw M3
    6~10 kg·cm
    — Weight Typical value 5 g

    ELECTRICAL CHARACTERISTICS
    Limits
    Symbol Parameter Test conditions Unit
    Min. Typ. Max.
    IRRM Repetitive reverse current Tj=25/125°C, VRRM applied — — 0.1/1.0 mA
    VFM Forward voltage Tj=25°C, IFM=200A, Instantaneous meas. — — 4.0 V
    trr Reverse recovery time — — 0.2 µs
    IFM=200A, Tj=25°C, di/dt=–1000A/µs, VR=300V
    Qrr Reverse recovery charge — — — µC
    Rth (j-c) Thermal resistance Junction to case — — 0.5 °C/ W
    Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied — — 0.5 °C/ W

    Sep.2001
    MITSUBISHI FAST RECOVERY DIODE MODULES

    RM50HG-12S
    HIGH SPEED SWITCHING USE
    NON-INSULATED TYPE

    PERFORMANCE CURVES
    MAXIMUM FORWARD CHARACTERISTIC MAXIMUM TRANSIENT THERMAL IMPEDANCE
    (JUNCTION TO CASE)
    10 0 2 3 5 7 10 1 2
    10 3 0.5
    7
    Tj=25°C
    5
    FORWARD CURRENT (A)

    0.4
    3
    2

    Zth (j-c) (°C/W)


    0.3
    10 2
    7 0.2
    5

    3
    0.1
    2

    10 1 0
    1.0 2.0 3.0 4.0 5.0 6.0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0
    FORWARD VOLTAGE (V) TIME (s)

    RATED SURGE (NON-REPETITIVE)


    FORWARD CURRENT
    1000
    SURGE (NON-REPETITIVE)

    800
    FORWARD CURRENT (A)

    600

    400

    200

    0
    1 2 3 5 7 10 20 30 50 70100

    CONDUCTION TIME
    (CYCLES AT 60Hz)

    Sep.2001

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