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    Datasheet (10) Uc2846

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    EduRoi
    This document provides specifications for an Advanced Power MOSFET, the IRFZ44. It lists key features such as avalanche rugged technology, lower input capacitance, and improved gate charge. The document then provides absolute maximum ratings, thermal resistance characteristics, electrical characteristics, and source-drain diode ratings and characteristics. It specifies parameters such as drain-source breakdown voltage, gate threshold voltage, on-state resistance, and reverse recovery time.

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    Datasheet (10) Uc2846

    Uploaded by

    EduRoi
    51 views2 pages
    This document provides specifications for an Advanced Power MOSFET, the IRFZ44. It lists key features such as avalanche rugged technology, lower input capacitance, and improved gate charge. The document then provides absolute maximum ratings, thermal resistance characteristics, electrical characteristics, and source-drain diode ratings and characteristics. It specifies parameters such as drain-source breakdown voltage, gate threshold voltage, on-state resistance, and reverse recovery time.

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    This document provides specifications for an Advanced Power MOSFET, the IRFZ44. It lists key features such as avalanche rugged technology, lower input capacitance, and improved gate charge. The document then provides absolute maximum ratings, thermal resistance characteristics, electrical characteristics, and source-drain diode ratings and characteristics. It specifies parameters such as drain-source breakdown voltage, gate threshold voltage, on-state resistance, and reverse recovery time.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    51 views2 pages

    Datasheet (10) Uc2846

    Uploaded by

    EduRoi
    This document provides specifications for an Advanced Power MOSFET, the IRFZ44. It lists key features such as avalanche rugged technology, lower input capacitance, and improved gate charge. The document then provides absolute maximum ratings, thermal resistance characteristics, electrical characteristics, and source-drain diode ratings and characteristics. It specifies parameters such as drain-source breakdown voltage, gate threshold voltage, on-state resistance, and reverse recovery time.

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    , One..

    20 STERN AVE. TELEPHONE: (973) 376-2922


    SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
    U.S.A. FAX: (973) 376-8960

    Advanced Power MOSFET IRFZ44


    FEATURES
    BVDSS : 60V
    » Avalanche Rugged Technology
    » Rugged Gate Oxide Technology f^DS(on) = 0.02412
    » Lower Input Capacitance
    ID = 50 A
    » Improved Gate Charge
    » Extended Safe Operating Area
    « 175°C Operating Temperature TO-220
    » Lower Leakage Current: 10uA(Max.) @ VDS = 60V
    » Lower RDS(ON): 0.020Q (Typ.)

    LGate 2. Drain 3. Source

    Absolute Maximum Ratings


    Symbol Characteristic Value Units
    VDSS Drain-to-Source Voltage 60 V
    Continuous Drain Current (TC=25°C) 50
    ID A
    Continuous Drain Current (TC=100°C) 35.4
    'DM Drain Current-Pulsed (1) 200 A
    VGS Gate-to-Source Voltage ±20 V
    EAS Single Pulsed Avalanche Energy (2) 857 mJ
    IAR Avalanche Current (1) 50 A
    EAR Repetitive Avalanche Energy (1) 12.6 mJ
    dv/dt Peak Diode Recovery dv/dt (3) 5.5 V/ns
    Total Power Dissipation (TC=25°C) 126 W
    PD
    Linear Derating Factor 0.84 W/°C
    Operating Junction and
    Tj , TSTG -55 to +175
    Storage Temperature Range
    Maximum Lead Temp, for Soldering °C
    TL 300
    Purposes, 1/8. from case for 5-seconds

    Thermal Resistance
    Symbol Characteristic Typ. Max. Units
    RBJC Junction-to-Case - 1.19
    ROCS Case-to-Sink 0.5 - °C/W
    RBJA Junction-to-Ambient - 62.5

    NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
    notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
    to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
    N.I Semi-Conductors encourages customers to verity that datasheets are current before placing orders.

    Quality Semi-Conductors
    N-CHANNEL
    IRFZ44 POWER MOSFET

    Electrical Characteristics (TC=25°C unless otherwise specified)


    Symbol Characteristic Min. Typ. Max. Units Test Condition
    BVDSS Drain-Source Breakdown Voltage 60 — _ V V GS =OV,l L) =250uA
    ABV/ATj Breakdown Voltage Temp. Coeff. — 0.063 — v/°c !D=250uA See Fig 7
    ^GS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS=5V,lD=250nA
    Gate-Source Leakage , Forward „ __ 100 VOS=20V
    'GSS nA
    Gate-Source Leakage , Reverse — — -100 V GS =-20V
    — — 10 VDS=60V
    'DSS Drain-to-Source Leakage Current uA
    - - 100 VDS=48V,TC=150°C
    Static Drain-Source
    RoS(on) - - 0.024 n VGS=10V,ID=25A (4)
    On-State Resistance
    9f» Forward Transconductance - 32.6 - u Vns=30V,ln=25A (4)
    Ciss Input Capacitance - 1770 2300
    GS -UV,V DS -ZOV,T -IMnZ
    C0ss Output Capacitance - 590 680 PF
    Crss Reverse Transfer Capacitance - 220 255
    'd(on) Turn-On Delay Time -- 20 40
    DD-OUV,ID-OUA,
    tr Rise Time - 16 40
    ns G-9.1ii
    td(off) Turn-Off Delay Time - 68 140
    See Fig 13 (4) (5)
    tf Fall Time - 70 140

    Q9 Total Gate Charge - 64 83 VDS=48V,VGS=10V,


    Qgs Gate-Source Charge -- 12.3 - nC ID=50A
    Qgd Gate-Drain (. Miller. ) Charge - 23.6 - See Fig 6& Fig 12 (4) (5)

    Source-Drain Diode Ratings and Characteristics


    Symbol Characteristic Min. Typ. Max. Units Test Condition
    Is Continuous Source Current - - 50 Integral reverse pn-diode
    A
    ISM Pulsed-Source Current (1) — - 200 in the MOSFET
    VSD Diode Forward Voltage (4) — - 1.8 V TJ=25°C,ls=50A,Vr,s=OV
    trr Reverse Recovery Time — 85 - ns Tj=25°C,lF=50A
    Qrr Reverse Recovery Charge - 0.24 - uC diF/dt=100A/|is (4)

    Notes;
    (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
    (2) L=0.4mH, IAS=50A, VDD=25V, RG=27ii, Starting Tj=25°C
    (3) I S D <50A, di/dt<350A/us, V DD < BV DSS , Starting Tj=25°C
    (4) Pulse Test : Pulse Width = 250ns, Duty Cycle < 2%
    (5) Essentially Independent of Operating Temperature

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