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    Isc N-Channel MOSFET Transistor: Irfz48N Iirfz48N

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    Fabio Leme
    This document summarizes the specifications of an N-channel MOSFET transistor from INCHANGE Semiconductor called the IRFZ48N. The key features are a maximum static drain-source resistance of 14mΩ, enhancement mode operation, fast switching speed, and reliability from 100% avalanche testing and minimal lot-to-lot variations. It provides maximum ratings for voltages, currents, power dissipation and temperatures. Thermal characteristics include junction-to-case and junction-to-ambient thermal resistances. Electrical characteristics at 25°C include breakdown voltage, threshold voltage, on-resistance, leakage currents, and diode forward voltage.

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    Isc N-Channel MOSFET Transistor: Irfz48N Iirfz48N

    Uploaded by

    Fabio Leme
    40 views2 pages
    This document summarizes the specifications of an N-channel MOSFET transistor from INCHANGE Semiconductor called the IRFZ48N. The key features are a maximum static drain-source resistance of 14mΩ, enhancement mode operation, fast switching speed, and reliability from 100% avalanche testing and minimal lot-to-lot variations. It provides maximum ratings for voltages, currents, power dissipation and temperatures. Thermal characteristics include junction-to-case and junction-to-ambient thermal resistances. Electrical characteristics at 25°C include breakdown voltage, threshold voltage, on-resistance, leakage currents, and diode forward voltage.

    Original Description:

    datasheet irfz48n

    Original Title

    Datasheet.hk_iirfz48n_8926750

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    This document summarizes the specifications of an N-channel MOSFET transistor from INCHANGE Semiconductor called the IRFZ48N. The key features are a maximum static drain-source resistance of 14mΩ, enhancement mode operation, fast switching speed, and reliability from 100% avalanche testing and minimal lot-to-lot variations. It provides maximum ratings for voltages, currents, power dissipation and temperatures. Thermal characteristics include junction-to-case and junction-to-ambient thermal resistances. Electrical characteristics at 25°C include breakdown voltage, threshold voltage, on-resistance, leakage currents, and diode forward voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    40 views2 pages

    Isc N-Channel MOSFET Transistor: Irfz48N Iirfz48N

    Uploaded by

    Fabio Leme
    This document summarizes the specifications of an N-channel MOSFET transistor from INCHANGE Semiconductor called the IRFZ48N. The key features are a maximum static drain-source resistance of 14mΩ, enhancement mode operation, fast switching speed, and reliability from 100% avalanche testing and minimal lot-to-lot variations. It provides maximum ratings for voltages, currents, power dissipation and temperatures. Thermal characteristics include junction-to-case and junction-to-ambient thermal resistances. Electrical characteristics at 25°C include breakdown voltage, threshold voltage, on-resistance, leakage currents, and diode forward voltage.

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    © All Rights Reserved
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    INCHANGE Semiconductor

    isc N-Channel MOSFET Transistor IRFZ48N， IIRFZ48N

    ·FEATURES
    ·Static drain-source on-resistance:
    RDS(on) ≤14mΩ
    ·Enhancement mode
    ·Fast Switching Speed
    ·100% avalanche tested
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    ·DESCRITION
    ·reliable device for use in a wide variety of applications

    ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 55 V

    VGS Gate-Source Voltage ±20 V

    ID Drain Current-Continuous 64 A

    IDM Drain Current-Single Pulsed 210 A

    PD Total Dissipation @TC=25℃ 130 W

    Tj Max. Operating Junction Temperature 175 ℃

    Tstg Storage Temperature -55~175 ℃

    ·THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Channel-to-case thermal resistance


    Rth(ch-c) 1.15 ℃/W

    Channel-to-ambient thermal resistance


    Rth(ch-a) 62 ℃/W

    isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor

    isc N-Channel MOSFET Transistor IRFZ48N， IIRFZ48N

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

    BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA 55 V

    VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA 2.0 4.0 V

    RDS(on) Drain-Source On-Resistance VGS=10V; ID=32A 14 mΩ

    IGSS Gate-Source Leakage Current VGS=±20V ±0.1 μA

    IDSS Drain-Source Leakage Current VDS=55V; VGS= 0V 25 μA

    VSD Diode forward voltage IS=32A, VGS = 0 V 1.3 V

    isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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