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    Isc N-Channel MOSFET Transistor IRLB4132: INCHANGE Semiconductor

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    Brahim Salah
    This document provides information on the IRLB4132 N-channel MOSFET transistor from INCHANGE Semiconductor. It has low gate drive requirements, is easy to drive, and is 100% avalanche tested for robust and reliable performance. Its applications include switching applications and low voltage power tools. The document lists the transistor's maximum ratings, thermal characteristics, and electrical characteristics.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Isc N-Channel MOSFET Transistor IRLB4132: INCHANGE Semiconductor

    Uploaded by

    Brahim Salah
    98 views2 pages
    This document provides information on the IRLB4132 N-channel MOSFET transistor from INCHANGE Semiconductor. It has low gate drive requirements, is easy to drive, and is 100% avalanche tested for robust and reliable performance. Its applications include switching applications and low voltage power tools. The document lists the transistor's maximum ratings, thermal characteristics, and electrical characteristics.

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    Data Rds Sheet

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    This document provides information on the IRLB4132 N-channel MOSFET transistor from INCHANGE Semiconductor. It has low gate drive requirements, is easy to drive, and is 100% avalanche tested for robust and reliable performance. Its applications include switching applications and low voltage power tools. The document lists the transistor's maximum ratings, thermal characteristics, and electrical characteristics.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    98 views2 pages

    Isc N-Channel MOSFET Transistor IRLB4132: INCHANGE Semiconductor

    Uploaded by

    Brahim Salah
    This document provides information on the IRLB4132 N-channel MOSFET transistor from INCHANGE Semiconductor. It has low gate drive requirements, is easy to drive, and is 100% avalanche tested for robust and reliable performance. Its applications include switching applications and low voltage power tools. The document lists the transistor's maximum ratings, thermal characteristics, and electrical characteristics.

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    INCHANGE Semiconductor

    isc N-Channel MOSFET Transistor IRLB4132

    ·FEATURES
    ·With low gate drive requirements
    ·Easy to drive
    ·100% avalanche tested
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    ·APPLICATIONS
    ·Switching applications
    ·Low voltage power tools

    ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 30 V

    VGSS Gate-Source Voltage ±20 V

    Drain Current-Continuous@TC=25℃ 150


    ID A
    TC=100℃ 100

    IDM Drain Current-Single Pulsed 620 A

    Total Dissipation @TC=25℃ 140


    PD W
    TC=100℃ 68

    Tj Operating Junction Temperature -55~175 ℃

    Tstg Storage Temperature -55~175 ℃

    ·THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth(ch-c) Channel-to-case thermal resistance 1.11 ℃/W

    Rth(ch-a) Channel-to-ambient thermal resistance 62 ℃/W

    isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor

    isc N-Channel MOSFET Transistor IRLB4132

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

    BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 30 V

    VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.1mA 1.35 2.35 V

    VGS= 10V; ID=40A 2.5 3.5


    RDS(on) Drain-Source On-Resistance mΩ
    VGS= 4.5V; ID=32A 3.5 4.5

    IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ±0.1 μA

    VDS= 24V; VGS= 0V@Tc=25℃ 1


    IDSS Drain-Source Leakage Current μA
    Tc=125℃ 100

    VSDF Diode forward voltage ISD=32A, VGS = 0 V 1.0 V

    isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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