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    Isc N-Channel MOSFET Transistor 2SK2645: Description

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    luis silva
    The document describes an N-Channel MOSFET transistor from INCHANGE Semiconductor. It has a drain current of 9A and can withstand voltages up to 600V. It is designed for high efficiency power supplies and has fast switching speeds and minimal lot-to-lot variations.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Isc N-Channel MOSFET Transistor 2SK2645: Description

    Uploaded by

    luis silva
    11 views2 pages
    The document describes an N-Channel MOSFET transistor from INCHANGE Semiconductor. It has a drain current of 9A and can withstand voltages up to 600V. It is designed for high efficiency power supplies and has fast switching speeds and minimal lot-to-lot variations.

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    2sk2645

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    The document describes an N-Channel MOSFET transistor from INCHANGE Semiconductor. It has a drain current of 9A and can withstand voltages up to 600V. It is designed for high efficiency power supplies and has fast switching speeds and minimal lot-to-lot variations.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    11 views2 pages

    Isc N-Channel MOSFET Transistor 2SK2645: Description

    Uploaded by

    luis silva
    The document describes an N-Channel MOSFET transistor from INCHANGE Semiconductor. It has a drain current of 9A and can withstand voltages up to 600V. It is designed for high efficiency power supplies and has fast switching speeds and minimal lot-to-lot variations.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    INCHANGE Semiconductor

    isc N-Channel MOSFET Transistor 2SK2645

    DESCRIPTION
    ·Drain Current ID= 9A@ TC=25℃
    ·Drain Source Voltage-
    : VDSS= 600V(Min)
    ·Fast Switching Speed
    ·100% avalanche tested
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·Designed for high efficiency switch mode power supply.

    ABSOLUTE MAXIMUM RATINGS(TC=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage (VGS=0) 600 V

    VGS Gate-Source Voltage ±30 V

    ID Drain Current-continuous@ TC=25℃ 9 A

    ID(puls) Pulse Drain Current 32 A

    Ptot Total Dissipation@TC=25℃ 50 W

    Tj Max. Operating Junction Temperature 150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    ·THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal Resistance, Junction to Case 3.47 ℃/W

    Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor

    isc N-Channel MOSFET Transistor 2SK2645

    ·ELECTRICAL CHARACTERISTICS (TC=25℃)

    SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT

    V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 600 V

    VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 3 4.5 V

    VSD Diode Forward On-Voltage IS=9A ;VGS= 0 1.5 V

    RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4A 1.2 Ω

    IGSS Gate-Body Leakage Current VGS=±30V;VDS= 0 ±0.1 µA

    IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 500 µA

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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