PolarHTTM IXTH 88N30P VDSS = 300 V

Power MOSFET IXTK 88N30P ID25 = 88 A

IXTQ 88N30P RDS(on) ≤ 40 mΩ
Ω
IXTT 88N30P
N-Channel Enhancement Mode
Avalanche Rated TO-247 (IXTH)

Symbol Test Conditions Maximum Ratings

G D (TAB)
D
VDSS TJ = 25° C to 150° C 300 V S
VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 300 V

VGS Continuous ±20 V TO-264 (IXTK)

VGSM Transient ±30 V

ID25 TC = 25° C 88 A
ID(RMS) External lead current limit 75 A
IDM TC = 25° C, pulse width limited by TJM 220 A
G
IAR TC = 25° C 60 A D
S
EAR TC = 25° C 60 mJ
D (TAB)
EAS TC = 25° C 2.0 J
TO-3P (IXTQ)
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 10 V/ns
TJ ≤150° C, RG = 4 Ω
PD TC = 25° C 600 W
TJ -55 ... +150 °C
TJM 150 °C
G
Tstg -55 ... +150 °C D
S (TAB)
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C TO-268 (IXTT)

Md Mounting torque 1.13/10 Nm/lb.in.

Weight TO-247 6.0 g

G
TO-264 10 g S D (TAB)
TO-3P & TO-268 5.5 g
G = Gate D = Drain
Symbol Test Conditions Characteristic Values S = Source TAB = Drain
(TJ = 25° C, unless otherwise specified) Min. Typ. Max. Features
l
BVDSS VGS = 0 V, ID = 250 µA 300 V International standard package
l
Unclamped Inductive Switching (UIS)
VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V rated
l
Low package inductance
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
- easy to drive and to protect
IDSS VDS = VDSS 100 µA
Advantages
VGS = 0 V TJ = 125° C 1 mA l
Easy to mount
l
RDS(on) VGS = 10 V, ID = 0.5 ID25 40 mΩ Space savings
l
Pulse test, t ≤300 µs, duty cycle d ≤ 2 % High power density

© 2006 IXYS All rights reserved DS99129E(12/05)

 IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
Symbol Test Conditions Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 45 60 S

Ciss 6300 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 950 pF
Crss 190 pF

td(on) 25 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 24 ns
td(off) RG = 3.3 Ω (External) 96 ns
tf 25 ns

Qg(on) 180 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 44 nC
Qgd 90 nC

RthJC 0.21° C/W

RthCS TO-247 and TO-3P 0.21 ° C/W
RthCS TO-264 0.15 ° C/W

Source-Drain Diode Characteristic Values

(TJ = 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
IS VGS = 0 V 88 A

ISM Repetitive 220 A

VSD IF = IS, VGS = 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

trr IF = 25 A, -di/dt = 100 A/µs 250 ns

QRM VR = 100 V, VGS = 0 V 3.3 µC

Characteristic Curves
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25ºC @ 25ºC
90 200
VGS = 10V VGS = 10V
80 180
9V 9V
8V 160
70
140 8V
60
I D - Amperes

I D - Amperes

120
50
100 7V
7V
40
80
30
60
20 6V 40 6V

10 20
5V 5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 18 20
V D S - Volts V D S - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
 IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
Fig. 3. Output Char acte r is tics Fig. 4. RDS(on ) Nor m alize d to 0.5 ID25
@ 125ºC V alue vs . Junction Te m pe r atur e
90 3
V GS = 10V 2.8
80 V GS = 10V
9V
2.6
70 8V
2.4

R D S (on) - Normalized
60 7V 2.2
I D - Amperes

2
50
1.8
I D = 88A
40 1.6
6V
1.4 I D = 44A
30
1.2
20 1

5V 0.8
10
0.6
0 0.4
0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150
V D S - V olts TJ - Degrees Centigrade

Fig. 5. RDS(on) Nor m alize d to Fig. 6. Dr ain Cur r e nt vs . Cas e

0.5 ID25 V alue vs . ID Te m pe r atur e
3.4 90
3.2 External Lead C urrent Lim it
V GS = 10V 80
3
2.8 70
R D S (on) - Normalized

2.6 TJ = 125ºC 60
I D - Amperes

2.4
2.2 50

2 40
1.8
30
1.6
1.4 20
1.2 TJ = 25ºC
10
1
0.8 0
0 20 40 60 80 100 120 140 160 180 200 -50 -25 0 25 50 75 100 125 150
I D - A mperes TC - Degrees Centigrade

Fig. 7. Input Adm ittance Fig. 8. Transconductance

160 100

90
140
TJ = -40ºC
80
120 25ºC
70 125ºC
g f s - Siemens
I D - Amperes

100 60

80 50

40
60
TJ = 125ºC 30
40 25ºC
20
-40ºC
20 10

0 0
4 4.5 5 5.5 6 6.5 7 7.5 8 0 20 40 60 80 100 120 140 160 180
V G S - Volts I D - Amperes

© 2006 IXYS All rights reserved

 IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
Fig. 9. Source Current vs.
Fig. 10. Gate Charge
Source-To-Drain Voltage
280 10

9 VDS = 150V
240
I D = 44A
8
I G = 10mA
200 7
I S - Amperes

VG S - Volts
6
160
5
120
4
TJ = 125ºC 3
80
2
TJ = 25ºC
40
1

0 0
0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 180
V S D - Volts Q G - nanoCoulombs

Fig. 12. Forw ard-Bias

Fig. 11. Capacitance Safe Operating Area
10000 1000
TJ = 150ºC
R DS(on) Limit TC = 25ºC
C iss
Capacitance - picoFarads

25µs
I D - Amperes

100 100µs

C oss 1ms
1000
10ms

10
DC

f = 1MHz C rss

100 1
0 5 10 15 20 25 30 35 40 10 100 1000
V D S - Volts V D S - Volts
Fig. 13. Maximum Transient Thermal Resistance
1.00
R(th) J C - ºC / W

0.10

0.01
1 10 100 1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
 IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P

TO-247 (IXTH) Outline TO-3P (IXTQ) Outline TO-268 (IXTT) Outline

1 2 3

Terminals:
1. Gate 2,4. Drain
Terminals:
3. Source
1. Gate 2,4. Drain
3. Source

Dim. Millimeter Inches

Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

TO-264 (IXTK) Outline

© 2006 IXYS All rights reserved