PolarHVTM IXTA 3N50P VDSS = 500 V

Power MOSFET IXTP 3N50P ID25 = 3.6 A

IXTY 3N50P RDS(on) ≤ 2.0 Ω
N-Channel Enhancement Mode
Avalanche Rated

Symbol Test Conditions Maximum Ratings TO-220 (IXTP)

VDSS TJ = 25° C to 150° C 500 V
VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V

VGSS ±30 V
VGSM ±40 V
G (TAB)
D S
ID25 TC = 25° C 3.6 A
IDM TC = 25° C, pulse width limited by TJM 8 A
TO-263 (IXTA)
IAR TC = 25° C 3 A
EAR TC = 25° C 10 mJ
EAS TC = 25° C 180 mJ
G
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns S
TJ ≤150° C, RG = 20 Ω (TAB)

PD TC = 25° C 70 W TO-252 (IXTY)

TJ -55 ... +150 °C

TJM 150 °C G
Tstg -55 ... +150 °C S
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
(TAB)
TSOLD Plastic body for 10 s 260 °C
G = Gate D = Drain
Md Mounting torque (TO-220) 1.13/10 Nm/lb.in.
S = Source TAB = Drain
Weight TO-220 4 g
TO-263 3 g Features
TO-252 0.8 g
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Symbol Test Conditions Characteristic Values Low package inductance
(TJ = 25° C, unless otherwise specified) Min. Typ. Max. - easy to drive and to protect

BVDSS VGS = 0 V, ID = 250 µA 500 V

Advantages
VGS(th) VDS = VGS, ID = 50µA 3.0 5.5 V
l
IGSS VGS = ± 30 VDC, VDS = 0 ±100 nA Easy to mount
l
Space savings
IDSS VDS = VDSS 5 µA l
High power density
VGS = 0 V TJ = 125° C 50 µA

RDS(on) VGS = 10 V, ID = 0.5 ID25 2.0 Ω

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

© 2006 IXYS All rights reserved DS99200E(12/05)

 IXTA 3N50P IXTP 3N50P
IXTY 3N50P

Symbol Test Conditions Characteristic Values TO-263 (IXTA) Outline

(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 2.5 3.5 S

Ciss 409 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 48 pF
Crss 6.1 pF

td(on) 15 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 15 ns
td(off) RG = 20 Ω (External) 38 ns
tf 12 ns

Qg(on) 9.3 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 3.3 nC
Qgd 3.4 nC

RthJC 1.8° C/W

RthCS (TO-220) 0.25 ° C/W

Source-Drain Diode Characteristic Values

(TJ = 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
IS VGS = 0 V 3 A

ISM Repetitive 5 A TO-220 (IXTP) Outline

VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

trr IF = 3 A, -di/dt = 100 A/µs 400 ns

VR = 100 V, VGS = 0 V

TO-252 AA (IXTY) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005 Pins: 1 - Gate 2 - Drain
b 0.64 0.89 0.025 0.035 3 - Source 4 - Drain
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
 IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Fig. 1. Output Char acte r is tics Fig. 2. Exte nde d Output Char acte r is tics
@ 25 º C @ 25 º C
3 8
V GS = 10V V GS = 10V
2.7 7
8V 8V
2.4 7V
6
2.1
I D - Amperes

I D - Amperes
1.8 7V
1.5 4

1.2 3
0.9 6V
2
0.6 6V
1
0.3

0 0
0 1 2 3 4 5 6 0 3 6 9 12 15 18 21 24 27 30
V D S - V olts V D S - V olts

Fig. 3. Output Char acte r is tics Fig. 4. RD S(on ) Nor m aliz e d to 0.5 ID 25
@ 125 º C V alue vs . Junction Te m pe r atur e
3 2.50
V GS = 10V
2.7 V GS = 10V
8V 2.25
2.4 7V
R D S ( o n ) - Normalized

2.00
2.1
I D - Amperes

1.8 1.75
I D = 3A
6V
1.5 1.50

1.2 I D = 1.5A
1.25
0.9
1.00
0.6

0.3 0.75
5V
0 0.50
0 2 4 6 8 10 12 -50 -25 0 25 50 75 100 125 150
V D S - V olts TJ - Degrees Centigrade

Fig. 5. RD S(on) Nor m aliz e d to Fig. 6. Dr ain Curr e nt vs . Cas e

0.5 ID 25 V alue vs . ID Te m pe r ature
3.2 3.5

V GS = 10V
3.0
2.8
TJ = 125 º C
R D S ( o n ) - Normalized

2.5
2.4
I D - Amperes

2.0
2.0
1.5
1.6
1.0
TJ = 25 º C
1.2
0.5

0.8 0.0
0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150
I D - A mperes TC - Degrees Centigrade

© 2006 IXYS All rights reserved

 IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Fig. 7. Input Adm ittance Fig. 8. Trans conductance
6 8

7
5
6 TJ = -40º C
4 25º C

g f s - Siemens
I D - Amperes

5
125º C
3 TJ = 125 º C 4
25 º C
-40 º C 3
2
2
1
1

0 0
4.5 5 5.5 6 6.5 7 0 1 2 3 4 5 6
V G S - V olts I D - Amperes

Fig. 9. Sou r ce Cu r r e nt vs .
Fig. 10. Gate Char ge
Sour ce -To-Dr ain V oltage
9 10

8 9 V D S = 250V

8 I D = 1.5A
7
7 I G = 10m A
6
I S - Amperes

V G S - Volts

6
5
5
4
4
TJ = 125 º C
3
3
2 TJ = 25 º C
2
1 1

0 0
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 0 1 2 3 4 5 6 7 8 9 10
V S D - V olts Q G - nanoCoulombs

Fig. 11. Capacitance Fig. 12. For w ar d-Bias

Safe Ope r ating Ar e a
1000 10
R D S(on) Lim it

C is s
Capacitance - picoFarads

25µs

100
I D - Amperes

100µs

1
C os s
1m s
10 DC
10m s

C rs TJ = 150ºC
f = 1MH z TC = 25ºC

1 0.1
0 5 10 15 20 25 30 35 40 10 100 1000
V D S - V olts V D S - V olts

IXYS reserves the right to change limits, test conditions, and dimensions.
 IXTA 3N50P IXTP 3N50P
IXTY 3N50P

Fig. 13. Maximum Transient Thermal Resistance

10.0
R( t h ) J C - ºC / W

1.0

0.1
0.1 1 10 100 1000
Pulse Width - milliseconds

© 2006 IXYS All rights reserved