FDB33N25 250V N-Channel MOSFET

September 2005
TM
UniFET
FDB33N25
250V N-Channel MOSFET

Features Description
• 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
• Low gate charge ( typical 36.8 nC) tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low Crss ( typical 39 pF)
• Fast switching This advanced technology has been especially tailored to mini-
• 100% avalanche tested mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
• Improved dv/dt capability
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.

D
D {

  z
G{ z

{
S
G S

Absolute Maximum Ratings

Symbol Parameter FDB33N25 Unit
VDSS Drain-Source Voltage 250 V
ID Drain Current - Continuous (TC = 25°C) 33 A
- Continuous (TC = 100°C) 20.4 A
IDM Drain Current - Pulsed (Note 1) 132 A
VGSS Gate-Source voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 918 mJ
IAR Avalanche Current (Note 1) 33 A
EAR Repetitive Avalanche Energy (Note 1) 23.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 235 W
- Derate above 25°C 1.89 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,
300 °C
1/8” from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter Min. Max. Unit
RθJC Thermal Resistance, Junction-to-Case -- 0.53 °C/W
RθJA* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)

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FDB33N25 Rev A

Free Datasheet http://www.datasheet4u.com/

 FDB33N25 250V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB33N25 FDB33N25TM D2-PAK 330mm 24mm 800

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 250 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250µA, Referenced to 25°C -- 0.25 -- V/°C
/ ∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V -- -- 1 µA
VDS = 200V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10V, ID = 16.5A -- 0.077 0.094 Ω
On-Resistance
gFS Forward Transconductance VDS = 40V, ID =16.5A (Note 4) -- 26.6 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, -- 1640 2135 pF
Coss f = 1.0MHz
Output Capacitance -- 330 430 pF
Crss Reverse Transfer Capacitance -- 39 59 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 125V, ID = 33A -- 35 80 ns
RG = 25Ω
tr Turn-On Rise Time -- 230 470 ns
td(off) Turn-Off Delay Time -- 75 160 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 120 250 ns
Qg Total Gate Charge VDS = 200V, ID = 33A -- 36.8 48 nC
Qgs Gate-Source Charge VGS = 10V -- 10 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 17 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 33A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 33A -- 220 -- ns
dIF/dt =100A/µs (Note 4)
Qrr Reverse Recovery Charge -- 1.71 -- µC

NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.35mH, IAS = 33A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 33A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

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FDB33N25 Rev A

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 FDB33N25 250V N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

2 VGS 2
10 Top : 15.0 V 10
10.0 V
8.0 V
7.0 V
6.5 V
ID, Drain Current [A]

6.0 V

ID, Drain Current [A]

Bottom : 5.5 V

1
10
1
10 o
150 C

o
25 C
o
-55 C
0 ※ Notes : ※ Notes :
10 1. 250µ s Pulse Test 1. VDS = 40V
2. TC = 25 ℃ 2. 250µ s Pulse Test
0
-1 0 1 10
10 10 10 2 4 6 8 10 12
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue

0.25
2
10
Drain-Source On-Resistance

0.20
IDR, Reverse Drain Current [A]

VGS = 10V
RDS(ON) [Ω ],

0.15

℃
1
0.10 10
150
VGS = 20V 25℃
0.05

※ Note : T = 25℃
J
※ Notes :
1. VGS = 0V
0.00 2. 250µ s Pulse Test
0 20 40 60 80 100
0
10
ID, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

12
4000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 50V
Crss = Cgd 10
VDS = 125V
VGS, Gate-Source Voltage [V]

3000 VDS = 200V

Coss
8
Capacitances [pF]

Ciss
6
2000

4
※ Note ;
1000 1. VGS = 0 V
Crss 2. f = 1 MHz
2

※ Note : I = 33A
D

0 0
10
-1 0
10 10
1 0 10 20 30 40

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

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 FDB33N25 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
BVDSS, (Normalized)

1.1

RDS(ON), (Normalized)
2.0

1.0 1.5

※ Notes :
1.0
0.9
1. VGS = 0 V
2. ID = 250 µA
0.5
※ Notes :
1. VGS = 10 V
2. ID = 16.5 A
0.8
-100 -50 0 50 100 150 200 0.0
-100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
o

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

40
10 µs
2
10
100 µs
30
ID, Drain Current [A]

1 ms
ID, Drain Current [A]

10 ms
10
1
100 ms
Operation in This Area DC
20
is Limited by R DS(on)

0
10
※ Notes : 10
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10 0
0 1 2
10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] ℃

Figure 11. Transient Thermal Response Curve

0
10

D = 0.5
Zθ JC(t), Thermal Response

-1 0.2
10
PDM
0.1
t1
0.05 t2
0.02
※ N otes :
10
-2
0.01
1. Z θ JC(t) = 0.53 ℃/W M ax.
single pulse 2. D uty F actor, D =t 1 /t 2
3. T JM - T C = P D M * Z θ JC(t)

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q uare W ave P ulse D uration [sec]

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FDB33N25 Rev A

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 FDB33N25 250V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

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FDB33N25 Rev A

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 FDB33N25 250V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

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FDB33N25 Rev A

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 FDB33N25 250V N-Channel MOSFET
Mechanical Dimensions

D2-PAK

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FDB33N25 Rev A

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I16

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