Data Sheet

Super Fast Recovery Diode

RFUS10TF4S
lSeries lDimensions (Unit : mm) lStructure
Standard Fast Recovery

lApplications
General rectification

RFUS10
TF4S
lFeatures ① ②

1)Single type.(TO-220)
2)High switching speed

lConstruction
Silicon epitaxial planer

ROHM : TO220NFM

① Manufacture Year

② Manufacture Week

lAbsolute maximum ratings (Tc=25C)

Parameter Symbol Conditions Limits Unit
Repetitive peak reverse voltage VRM Duty≤0.5 430 V
Reverse voltage VR 430 V
Average rectified forward current Io Tc=82°C
60Hz half sin wave, Resistance load, 10 A
60Hz half sin wave, Non-repetitive
Forward current surge peak IFSM 80 A
one cycle peak value, Tj=25°C
Junction temperature Tj 150 C
Storage temperature Tstg -55 to +150 C

lElectrical characteristics (Tj=25C)

Parameter Symbol Conditions Min. Typ. Max. Unit
Forward voltage VF IF=10A － 1.45 1.7 V
Reverse current IR VR=430V － 0.05 10 μA
Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×IR － 19 30 ns
Thermal resistance Rth(j-c) junction to case － － 3 °C/W

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A
 RFUS10TF4S 　 Data Sheet

100 100000

Tj=150°C
Tj=125°C
10000

REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)

Tj=150°C Tj=125°C
10
1000

Tj=25°C Tj=75°C

100
Tj=75°C
1
Tj=25°C
10

0.1 1
0 1 2 3 0 100 200 300 400

FORWARD VOLTAGE：VF(V) REVERSE VOLTAGE：VR(V)

VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS

1000 1700

f=1MHz 1650 IF=10A

Tj=25°C
1600
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN

1550
TERMINALS:Ct(pF)

100
1500

1450

1400
10 AVE:1436mV
1350

1300

1250

1 1200
0 5 10 15 20 25 30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS

100 250
VR=430V f=1MHz
240
Tj=25°C VR=0V
230 Tj=25°C
REVERSE CURRENT:IR(nA)

CAPACITANCE BETWEEN

220
TERMINALS:Ct(pF)

210

10 200
AVE:182.2pF
190

AVE:13.6nA 180

170

160

1 150

IR DISPERSION MAP Ct DISPERSION MAP

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A
 RFUS10TF4S 　 Data Sheet

300 30
IF=0.5A
IR=1.0A

REVERSE RECOVERY TIME:trr(ns)

250 25 Irr=0.25×IR
IFSM
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)

8.3ms Tj=25°C

1cyc.
200 20

AVE:134.5A
150 15

AVE:17.9ns
100 10

50 5

0 0

trr DISPERSION MAP

IFSM DISPERSION MAP

1000 1000
FORWARD CURRENT:IFSM(A)
FORWARD CURRENT:IFSM(A)

100
PEAK SURGE
PEAK SURGE

100

10

1 10
1 10 100 1 10 100
NUMBER OF CYCLES TIME:t(ms)
IFSM-CYCLE CHARACTERISTICS IFSM-t CHARACTERISTICS

10 10
THERMAL IMPEDANCE:Rth (°C/W)

8 Rth(j-c)
DISCHARGE TEST ESD(KV)
ELECTROSTATIC

TRANSIENT

AVE：0.66kV AVE：4.5kV
2

0 0.1
C=200pF C=100pF 0.001 0.01 0.1 1 10 100 1000
R=0Ω R=1.5kΩ
TIME:t(s)
ESD DISPERSION MAP Rth-t CHARACTERISTICS

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A
 RFUS10TF4S 　 Data Sheet

40 12

D.C. Io
35 D.C. 0A
10 D=0.8 0V
D=0.8 VR
30

FORWARD CURRENT:Io(A)
D=0.5 t
D=0.5 D=t/T

AVERAGE RECTIFIED
FORWARD POWER
DISSIPATION:Pf(W)

8 half sin wave VR=215V

25 half sin wave T Tj=150°C

D=0.2
20 6
D=0.1 D=0.2
15 D=0.05
4 D=0.1

10 D=0.05
2
5

0 0
0 5 10 15 20 0 30 60 90 120 150

AVERAGE RECTIFIED
FORWARD CURRENT：Io(A) AMBIENT TEMPERATURE:Ta(°C)
Io-Pf CHARACTERISTICS DERATING CURVE (Io-Ta)

18
D.C.
16 Io
0A
D=0.8 0V
14 VR
FORWARD CURRENT:Io(A)

t
AVERAGE RECTIFIED

D=t/T
12 D=0.5 VR=215V
T Tj=150°C
10
half sin wave
8

6 D=0.2

4 D=0.1

2 D=0.05

0
0 30 60 90 120 150

CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A
 Notice

Notes

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A