FQPF8N60CF 600V N-Channel MOSFET

February 2006
TM
FRFET
FQPF8N60CF
600V N-Channel MOSFET
Features Description
• 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect
• Low gate charge ( typical 28 nC) transistors are produced using Fairchild’s proprietary, planar
• Low Crss ( typical 12 pF) stripe, DMOS technology.
• Fast switching This advanced technology has been especially tailored to
• 100% avalanche tested minimize on-state resistance, provide superior switching
• Improved dv/dt capability performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.

GD S
TO-220F
FQPF Series
S

Absolute Maximum Ratings

Symbol Parameter FQPF8N60CFT Units
VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C) 6.26* A
- Continuous (TC = 100°C) 3.96* A
IDM Drain Current - Pulsed (Note 1) 25* A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ
IAR Avalanche Current (Note 1) 6.26 A
EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 48 W
- Derate above 25°C 0.38 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol Parameter FQPF8N60CF Units
RθJC Thermal Resistance, Junction-to-Case 2.6 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQPF8N60CF Rev. A
 FQPF8N60CF 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQPF8N60CFT FQPF8N60CFT TO-220F -- -- 50

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V
∆BVDSS/
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C
∆TJ
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 µA
VDS = 480 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.13 A -- 1.25 1.5 Ω
gFS Forward Transconductance VDS = 40 V, ID =3.13 A (Note 4) -- 8.7 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 965 1255 pF
Coss Output Capacitance f = 1.0 MHz -- 105 135 pF
Crss Reverse Transfer Capacitance -- 12 16 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300 V, ID = 6.26A, -- 16.5 45 ns
RG = 25 Ω
tr Turn-On Rise Time -- 60.5 130 ns

td(off) Turn-Off Delay Time -- 81 170 ns

(Note 4, 5)
tf Turn-Off Fall Time -- 64.5 140 ns

Qg Total Gate Charge VDS = 480 V, ID = 6.26A, -- 28 36 nC

VGS = 10 V
Qgs Gate-Source Charge -- 4.5 -- nC
(Note 4, 5)
Qgd Gate-Drain Charge -- 12 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 6.26 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 25 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.26 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 6.26 A, -- 82 -- ns
dIF / dt = 100 A/µs (Note 4)
Qrr Reverse Recovery Charge -- 242 -- nC
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, IAS = 6.26A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 6.26A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

2 www.fairchildsemi.com
FQPF8N60CF Rev. A
 FQPF8N60CF 600V N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

VGS
Top : 15.0 V
10.0 V
1 8.0 V
10 7.0 V 10
1

6.5 V
6.0 V

ID, Drain Current [A]

5.5 V
ID, Drain Current [A]

o
150 C
Bottom : 5.0 V

o
0
10 25 C
o
10
0 -55 C

※ Notes : ※ Notes :
10
-1
1. 250µs Pulse Test 1. VDS = 40V
2. TC = 25℃ 2. 250µs Pulse Test
-1
10
-1 0 1 2 4 6 8 10
10 10 10
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue

3.5

1
10
3.0
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

VGS = 10V
2.5
RDS(ON) [Ω ],

2.0
0
10

1.5
VGS = 20V

1.0 ※ Notes :
150℃ 25℃ 1. VGS = 0V
※ Note : TJ = 25℃ 2. 250µs Pulse Test

0.5 10
-1

0 5 10 15 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
1800 Crss = Cgd
10 VDS = 120V
1600
VGS, Gate-Source Voltage [V]

1400 Ciss VDS = 300V

8
Capacitance [pF]

1200 VDS = 480V

6
1000 Coss

800
4
600 ※ Notes ;
1. VGS = 0 V
Crss 2. f = 1 MHz
400 2

* Note : ID = 6.26A
200
0
0 0 5 10 15 20 25 30
-1 0 1
10 10 10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]

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FQPF8N60CF Rev. A
 FQPF8N60CF 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2
3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0
1.5

1.0
0.9 * Notes :
1. VGS = 0 V
* Notes :
2. ID = 250 킕 0.5 1. VGS = 10 V
2. ID = 3.13 A
0.8
-100 -50 0 50 100 150 200 0.0
-100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
o

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

2 8
10
Operation in This Area
is Limited by R DS(on)
10 µs

10
1 100 µs 6

1ms
ID, Drain Current [A]
ID, Drain Current [A]

10ms
0 100ms
10 4
DC

-1
10 * Notes : 2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
10 10
1
10
2 3
10 0
25 50 75 100 125 150
VDS, Drain-SourceVoltage[V] o
TC, Case Temperature [ C]

Figure 11. Transient Thermal Response Curve

0
D=0.5
10
Z? JC(t), Thermal Response

0.2
0.1
0.05
-1
10 PDM
0.02
t1
0.01 t2
* Notes :
1. Z? JC(t) = 2.6 ? /W Max.
-2 single pulse 2. Duty Factor, D=t1/t2
10
3. TJM - TC = PDM * Z? JC(t)

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t1, Square Wave Pulse Duration [sec]

4 www.fairchildsemi.com
FQPF8N60CF Rev. A
 FQPF8N60CF 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

5 www.fairchildsemi.com
FQPF8N60CF Rev. A
 FQPF8N60CF 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

6 www.fairchildsemi.com
FQPF8N60CF Rev. A
 FQPF8N60CF 600V N-Channel MOSFET
Mechanical Dimensions

TO-220F
3.30 ±0.10

10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20

(7.00) (0.70)

6.68 ±0.20

15.87 ±0.20
15.80 ±0.20

(1.00x45°)

MAX1.47
9.75 ±0.30

0.80 ±0.10
(3
0°
)

#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20

9.40 ±0.20

Dimensions in Millimeters

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FQPF8N60CF Rev. A
TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® ISOPLANAR™ PowerEdge™ SuperFET™
ActiveArray™ FASTr™ LittleFET™ PowerSaver™ SuperSOT™-3
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Across the board. Around the world.™ PACMAN™ SMART START™ VCX™
The Power Franchise® POP™ SPM™ Wire™
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I19