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    Isc 2SC2525: Silicon NPN Power Transistor

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    Yahya Gökay Akay
    This document provides information on the 2SC2525 silicon NPN power transistor from INCHANGE Semiconductor. It lists the transistor's absolute maximum ratings, electrical characteristics, and applications. The 2SC2525 is designed for audio and general purpose applications with a minimum collector-emitter breakdown voltage of 120V and good linearity of its DC current gain. It has been 100% avalanche tested for robust and reliable performance with minimum lot-to-lot variations.

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    Isc 2SC2525: Silicon NPN Power Transistor

    Uploaded by

    Yahya Gökay Akay
    39 views2 pages
    This document provides information on the 2SC2525 silicon NPN power transistor from INCHANGE Semiconductor. It lists the transistor's absolute maximum ratings, electrical characteristics, and applications. The 2SC2525 is designed for audio and general purpose applications with a minimum collector-emitter breakdown voltage of 120V and good linearity of its DC current gain. It has been 100% avalanche tested for robust and reliable performance with minimum lot-to-lot variations.

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    2sc2525

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    This document provides information on the 2SC2525 silicon NPN power transistor from INCHANGE Semiconductor. It lists the transistor's absolute maximum ratings, electrical characteristics, and applications. The 2SC2525 is designed for audio and general purpose applications with a minimum collector-emitter breakdown voltage of 120V and good linearity of its DC current gain. It has been 100% avalanche tested for robust and reliable performance with minimum lot-to-lot variations.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    39 views2 pages

    Isc 2SC2525: Silicon NPN Power Transistor

    Uploaded by

    Yahya Gökay Akay
    This document provides information on the 2SC2525 silicon NPN power transistor from INCHANGE Semiconductor. It lists the transistor's absolute maximum ratings, electrical characteristics, and applications. The 2SC2525 is designed for audio and general purpose applications with a minimum collector-emitter breakdown voltage of 120V and good linearity of its DC current gain. It has been 100% avalanche tested for robust and reliable performance with minimum lot-to-lot variations.

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    © All Rights Reserved
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    INCHANGE Semiconductor

    isc Silicon NPN Power Transistor 2SC2525

    DESCRIPTION
    ·High Collector-Emitter Breakdown Voltage-
    V(BR)CEO= 120V(Min)
    ·Good Linearity of hFE
    ·100% avalanche tested
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·Designed for audio and general purpose applications.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 120 V

    VCEO Collector-Emitter Voltage 120 V

    VEBO Emitter-Base Voltage 7 V

    IC Collector Current-Continuous 12 A

    IE Emitter Current-Continuous -12 A

    Collector Power Dissipation


    PC 120 W
    @ TC=25℃

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor

    isc Silicon NPN Power Transistor 2SC2525

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA ; IB= 0 120 V

    V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 7 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5 A 1.8 V

    VBE Base-Emitter Voltage IC= 5A; VCE= 5V 1.7 V

    ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA

    IEBO Emitter Cutoff Current VEB= 7V; IC=0 10 μA

    hFE-1 DC Current Gain IC= 1A; VCE= 5V 60 200

    hFE-2 DC Current Gain IC= 7A; VCE= 5V 40

    COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz 300 pF

    fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 80 MHz

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time
    without notification. The information contained herein is presented only as a guide for the
    applications of our products.
    ISC products are intended for usage in general electronic equipment. The products are not
    designed for use in equipment which require specialized quality and/or reliability, or in
    equipment which could have applications in hazardous environments, aerospace industry, or
    medical field. Please contact us if you intend our products to be used in these special
    applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any
    particular purpose, nor does ISC assume any liability arising from the application or use of
    any products, and specifically disclaims any and all liability, including without limitation
    special, consequential or incidental damages.

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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