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2 SC 2073

This document provides information on the 2SC2073 silicon NPN power transistor from ISC. It has a collector-emitter breakdown voltage of 150V minimum and is intended for power amplifier and vertical output applications. Key absolute maximum ratings include a collector current of 1.5A continuous and collector-emitter voltage of 150V. Electrical characteristics are also specified such as a saturation voltage of 1.5V maximum at 500mA collector current and 50mA base current.

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69 views

2 SC 2073

This document provides information on the 2SC2073 silicon NPN power transistor from ISC. It has a collector-emitter breakdown voltage of 150V minimum and is intended for power amplifier and vertical output applications. Key absolute maximum ratings include a collector current of 1.5A continuous and collector-emitter voltage of 150V. Electrical characteristics are also specified such as a saturation voltage of 1.5V maximum at 500mA collector current and 50mA base current.

Uploaded by

mauriciobtb
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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isc Silicon NPN Power Transistor 2SC2073

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 150V(Min)
·Wide Area of Safe Operation
·Complement to Type 2SA940
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS

·Power amplifier applications.


·Vertical output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 150 V

VCEO Collector-Emitter Voltage 150 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 1.5 A

IB Base Current-Continuous 0.5 A

Collector Power Dissipation


1.5
@ Ta=25℃
PC W
Collector Power Dissipation
25
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor 2SC2073

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.5 V

VBE(on) Base-Emitter On Voltage IC= 500mA ; VCE= 10V 0.85 V

ICBO Collector Cutoff Current VCB= 120V ; IE= 0 10 μA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA

hFE DC Current Gain IC= 500mA ; VCE= 10V 40 140

COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 35 pF

fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 10V 4 MHz

Notice：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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