Scribd
Upload
8 views

2SD1289

Datasheet for isc Silicon NPN Power Transistor 2SD1289

Uploaded by

gepid28541
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
8 views

2SD1289

Datasheet for isc Silicon NPN Power Transistor 2SD1289

Uploaded by

gepid28541
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

INCHANGE Semiconductor

isc Silicon NPN Power Transistor 2SD1289

DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.65V(Typ)@IC= 5.0A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Complement to Type 2SB966
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Audio frequency power amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 120 V

VCEO Collector-Emitter Voltage 120 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current- Continuous 8 A

ICP Collector Current-Pulse 12 A

Collector Power Dissipation


PC 80 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc Silicon NPN Power Transistor 2SD1289

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.65 1.5 V

VBE(sat)NOTE Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.25 2.0 V

ICBO Collector Base Cutoff Current VCB=120V; IE= 0 50 uA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 uA

hFE -1NOTE DC Current Gain IC= 50mA ; VCE= 5V 40

hFE -2NOTE DC Current Gain IC= 1A ; VCE= 5V 60 320

fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 60 MHz

COB Output Capacitance IE= 0 ; VCB= 10V,ftest= 1MHz 120 pF

NOTE:Pulse test PW≤350us,duty cycle ≤2%


 hFE1 Classifications

R Q P

60-120 100-200 160-320

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any
particular purpose, nor does ISC assume any liability arising from the application or use of
any products, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy