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2SD745 Inchange

This document provides information on the 2SD745 silicon NPN power transistor from ISC. It has a collector-emitter breakdown voltage of 140V minimum and is suitable for audio frequency power amplifier applications up to 120 watts. Key specifications include a continuous collector current of 10A, peak collector current of 15A, and junction temperature of 150°C.

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32 views

2SD745 Inchange

This document provides information on the 2SD745 silicon NPN power transistor from ISC. It has a collector-emitter breakdown voltage of 140V minimum and is suitable for audio frequency power amplifier applications up to 120 watts. Key specifications include a continuous collector current of 10A, peak collector current of 15A, and junction temperature of 150°C.

Uploaded by

TabletaUnica
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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isc Silicon NPN Power Transistor 2SD745

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
·Complement to Type 2SB705
·High Power Dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·For audio frequency power amplifier applications
·Suitable for output stages of 60~120 watts audio amplifier
and voltage regulations.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 140 V

VCEO Collector-Emitter Voltage 140 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 10 A

ICM Collector Current-Peak 15 A

Collector Power Dissipation


PC 120 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor 2SD745

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.5 V

VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V

ICBO Collector Cutoff Current VCB= 140V; IE= 0 50 μA

IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 μA

hFE-1 DC Current Gain IC= 50mA; VCE= 5V 20 55

hFE-2 DC Current Gain IC= 2A; VCE= 5V 40 80 200

COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 270 pF

fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V 15 MHz

 hFE-2 Classifications

S R Q

40-80 60-120 100-200

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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