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20013122-034-EDC Lab Manual#10

This lab report describes an experiment to plot the input and output characteristics of a transistor connected in common base configuration. The input characteristics were obtained by varying the emitter-base voltage at different collector-base voltages and recording the corresponding emitter currents. The output characteristics were obtained by varying the collector-base voltage at different constant emitter currents and recording the collector currents. The results were plotted on graphs and questions about transistor biasing and current gain were answered.

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24 views

20013122-034-EDC Lab Manual#10

This lab report describes an experiment to plot the input and output characteristics of a transistor connected in common base configuration. The input characteristics were obtained by varying the emitter-base voltage at different collector-base voltages and recording the corresponding emitter currents. The output characteristics were obtained by varying the collector-base voltage at different constant emitter currents and recording the collector currents. The results were plotted on graphs and questions about transistor biasing and current gain were answered.

Uploaded by

Usama Mughal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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LAB REPORT #10

Name: Junaid iftikhar


Roll: 20013122-034
Subject: EDC Lab
Submitted To: PF. Iftikhar

Department of Electrical Engineering

UNIVERSITY OF GUJRAT
Title:

Common Base Transistor Characteristics.

Objective:

To plot the Input and Output characteristics of a transistor connected in Common

Base Configuration.

Theory:

The transistor is a semiconductor device which transfers a weak signal from low
resistance circuit to high resistance circuit. The words trans mean transfer property and
istor mean resistance property offered to the junctions. In other words, it is a
switching device which regulates and amplify the electrical signal likes voltage or
current. The transistor consists two PN diode connected back to back. It has three
terminals namely emitter, base and collector. The base is the middle section which is
made up of thin layers. The right part of the diode is called emitter diode and the left part
is called collector-base diode. These names are given as per the common terminal of the
transistor. The emitter-based junction of the transistor is connected to forward biased and
the collector-base junction is connected in reverse bias which offers a high resistance.

There are two types of transistor, namely NPN transistor and PNP transistor. The
transistor which has two blocks of n-type semiconductor material and one block of P-type
semiconductor material is known as NPN transistor. Similarly, if the material has one
layer of N-type material and two layers of P-type material then it is called PNP transistor.
The symbol of NPN and PNP is shown in the figure below.
Figure 9.1

The Common Base Amplifier is another type of bipolar junction transistor, (BJT)
configuration where the base terminal of the transistor is a common terminal to both the
input and output signals, hence its name common base (CB). The common base
configuration is less common as an amplifier than compared to the more popular
common emitter, (CE) or common collector, (CC) configurations but is still used due to
its unique input/output characteristics. For the common base configuration to operate as
an amplifier, the input signal is applied to the emitter terminal and the output is taken
from the collector terminal. Thus, the emitter current is also the input current, and the
collector current is also the output current, but as the transistor is a three layer, two pn-
junction devices, it must be correctly biased for it to work as a common base amplifier.
That is the base-emitter junction is forward-biased.

Figure 9.2
Materials Required:

1. Proteus software.
2. Transistor: BC107
3. Resistor: 1k ohm
4. Battery.
5. DC voltmeter.
6. DC ammeter.

Procedure:

 For input characteristics:


1. Connect the circuit as in the circuit diagram.
2. Keep VEE and VCC in zero volts before giving the supply
3. Set VCB = 1 volt by varying VCC. and vary the VEE smoothly with fine control
such that emitter current IE varies in steps of 0.2mA from zero up to 20mA, and
note down the corresponding voltage VEB for each step in the tabular form.
4. Repeat the experiment for VCB =2 volts and 3 volts.
5. Draw a graph between VEB Vs IE against VCB = Constant.
 For output characteristics:
1. Start VEE and VCC from zero Volts.
2. Set the IE = 1mA by using VEE such that, VCB changes in steps of 1.0 volts
from zero up to 20 volts, note down the corresponding collector current IC for
each step in the tabular form.
3. Repeat the experiment for IE = 3mA and IE = 5mA, tabulate the readings.
4. Draw a graph between VCB Vs IC against IE = Constant.
Circuit Diagram:

Figure 9.3

Tables:

 For input:

V CB =0 V V CB =1 V V CB =2 V
Table 9.1

 For output:

I E =1 mA I E =3 mA I E =5 mA

Table 9.2

Simulation Results:
Questions:

1. What do you mean by biasing of transistor?


A. When dc voltages are applied across the different terminals of transistor, it is called
biasing.
2. What is DC current gain in common base configuration?
A. It is ratio of collector current (Ic) to emitter current (Ie).
3. What is typical value for DC current gain?
A. 0.99.

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