STM32WLE5CCU6

STM32WLE5xx STM32WLE4xx
Multiprotocol LPWAN 32-bit Arm® Cortex®-M4 MCUs, LoRa®,

(G)FSK, (G)MSK, BPSK, up to 256KB Flash, 64KB SRAM
Datasheet - production data
Features
Radio
• Frequency range: 150 MHz to 960 MHz
UFBGA73
• Modulation: LoRa®, (G)FSK, (G)MSK and UFQFPN48 WLCSP59
(5 x 5 mm)
(7 x 7 mm)
BPSK
– Adaptive real-time accelerator (ART
• RX sensitivity: –123 dBm for 2-FSK
Accelerator) allowing 0-wait-state
(at 1.2 Kbit/s), –148 dBm for LoRa®
execution from Flash memory, frequency
(at 10.4 kHz, spreading factor 12)
up to 48 MHz, MPU and DSP instructions
• Transmitter high output power, programmable – 1.25 DMIPS/MHz (Dhrystone 2.1)
up to +22 dBm
• Transmitter low output power, programmable Security and identification
up to +15 dBm
• Hardware encryption AES 256-bit
• Compliant with the following radio frequency
• True random number generator (RNG)
regulations such as ETSI EN 300 220,
EN 300 113, EN 301 166, FCC CFR 47 • Sector protection against read/write operations
Part 15, 24, 90, 101 and the Japanese ARIB (PCROP, RDP, WRP)
STD-T30, T-67, T-108 • CRC calculation unit
• Compatible with standardized or proprietary • Unique device identifier (64-bit UID compliant
protocols such as LoRaWAN®, Sigfox™, with IEEE 802-2001 standard)
W-MBus and more (fully open wireless
• 96-bit unique die identifier
system-on-chip)
• Hardware public key accelerator (PKA)
Ultra-low-power platform
Supply and reset management
• 1.8 V to 3.6 V power supply
• High-efficiency embedded SMPS step-down
• –40 °C to +105 °C temperature range
converter
• Shutdown mode: 31 nA (VDD = 3 V)
• SMPS to LDO smart switch
• Standby (+ RTC) mode:
• Ultra-safe, low-power BOR (brownout reset)
360 nA (VDD = 3 V)
with 5 selectable thresholds
• Stop2 (+ RTC) mode: 1.07 µA (VDD = 3 V)
• Ultra-low-power POR/PDR
• Active-mode MCU: < 72 µA/MHz (CoreMark®)
• Programmable voltage detector (PVD)
• Active-mode RX: 4.82 mA
• VBAT mode with RTC and 20x32-byte backup
• Active-mode TX: 15 mA at 10 dBm and 87 mA registers
at 20 dBm (LoRa® 125 kHz)
Clock sources
Core
• 32 MHz crystal oscillator
• 32-bit Arm® Cortex®-M4 CPU
• TCXO support: programmable supply voltage
November 2020 DS13105 Rev 8 1/145

This is information on a product in full production. www.st.com
STM32WLE5/E4xx
• 32 kHz oscillator for RTC with calibration Controllers

• High-speed internal 16 MHz factory trimmed • 2x DMA controller (7 channels each)
RC (± 1 %) supporting ADC, DAC, SPI, I2C, LPUART,
• Internal low-power 32 kHz RC USART, AES and timers
• Internal multi-speed low-power 100 kHz to • 2x USART (ISO 7816, IrDA, SPI)
48 MHz RC • 1x LPUART (low-power)
• PLL for CPU, ADC and audio clocks • 2x SPI 16 Mbit/s (1 over 2 supporting I2S)
• 3x I2C (SMBus/PMBus™)
Memories
• 2x 16-bit 1-channel timer
• Up to 256-Kbyte Flash memory
• 1x 16-bit 4-channel timer (supporting
• Up to 64-Kbyte RAM motor control)
• 20x32-bit backup register
• 1x 32-bit 4-channel timer
• Bootloader supporting USART and SPI • 3x 16-bit ultra-low-power timer
interfaces
• 1x RTC with 32-bit sub-second wakeup
• OTA (over-the-air) firmware update capable counter
• Sector protection against read/write operations
• 1x independent SysTick
Rich analog peripherals (down to 1.62 V) • 1x independent watchdog
• 12-bit ADC 2.5 Msps, up to 16 bits with • 1x window watchdog

hardware oversampling, conversion range up
to 3.6 V Up to 43 I/Os, most 5 V-tolerant
• 12-bit DAC, low-power sample-and-hold Development support
• 2x ultra-low-power comparators
• Serial-wire debug (SWD), JTAG
System peripherals All packages ECOPACK2 compliant
• Semaphores for processor firmware process
synchronization
Table 1. Device summary
Reference Part number
STM32WLE5C8, STM32WLE5CB, STM32WLE5CC

STM32WLE5xx microcontrollers STM32WLE5J8, STM32WLE5JB, STM32WLE5JC
STM32WLE5U8, STM32WLE5UB, STM32WLE5UC
STM32WLE4C8, STM32WLE4CB, STM32WLE4CC
STM32WLE4xx microcontrollers STM32WLE4J8, STM32WLE4JB, STM32WLE4JC
STM32WLE4U8, STM32WLE4UB, STM32WLE4UC
2/145 DS13105 Rev 8

STM32WLE5/E4xx Contents
Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1 Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.2 Arm Cortex-M core . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.3 Adaptive real-time memory accelerator (ART Accelerator) . . . . . . . . . . . 15
3.4 Memory protection unit (MPU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.5 Memories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.5.1 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.5.2 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.6 Security management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.8 Sub-GHz radio . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.8.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.8.2 General description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.8.3 Transmitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.8.4 Receiver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.8.5 RF-PLL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.8.6 Intermediate frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.9 Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.9.1 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.9.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.9.3 Linear voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.9.4 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.10 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.10.1 Reset mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.11 Peripheral interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.12 Reset and clock controller (RCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3.13 Hardware semaphore (HSEM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.14 General-purpose inputs/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.15 Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . 38
DS13105 Rev 8 3/145

6
Contents STM32WLE5/E4xx
3.16 Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

3.16.1 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 39
3.16.2 Extended interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . 39
3.17 Cyclic redundancy check (CRC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.18 Analog-to-digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.18.1 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3.18.2 Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3.18.3 VBAT battery voltage monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.19 Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.20 Voltage reference buffer (VREFBUF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.21 Comparator (COMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.22 True random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.23 Advanced encryption standard hardware accelerator (AES) . . . . . . . . . . 42
3.24 Public key accelerator (PKA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.25 Timer and watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.25.1 Advanced-control timer (TIM1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
3.25.2 General-purpose timers (TIM2, TIM16, TIM17) . . . . . . . . . . . . . . . . . . . 43
3.25.3 Low-power timers (LPTIM1, LPTIM2 and LPTIM3) . . . . . . . . . . . . . . . . 44
3.25.4 Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
3.25.5 System window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
3.25.6 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
3.26 Real-time clock (RTC), tamper and backup registers . . . . . . . . . . . . . . . 45
3.27 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
3.28 Universal synchronous/asynchronous receiver transmitter
(USART/UART) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
3.29 Low-power universal asynchronous receiver transmitter (LPUART) . . . . 47
3.30 Serial peripheral interface (SPI)/integrated-interchip sound
interface (I2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
3.31 Development support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
4 Pinouts, pin description and alternate functions . . . . . . . . . . . . . . . . . 49
5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
5.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
5.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
5.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
4/145 DS13105 Rev 8

STM32WLE5/E4xx Contents
5.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

5.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
5.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
5.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
5.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
5.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
5.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
5.3.1 Main performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
5.3.2 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
5.3.3 Sub-GHz radio characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
5.3.4 Operating conditions at power-up/power-down . . . . . . . . . . . . . . . . . . . 74
5.3.5 Embedded reset and power-control block characteristics . . . . . . . . . . . 75
5.3.6 Embedded voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
5.3.7 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
5.3.8 Wakeup time from low-power modes and voltage scaling
transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
5.3.9 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
5.3.10 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
5.3.11 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
5.3.12 Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
5.3.13 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
5.3.14 Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
5.3.15 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
5.3.16 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
5.3.17 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
5.3.18 Analog switches booster . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
5.3.19 Analog-to-digital converter characteristics . . . . . . . . . . . . . . . . . . . . . . 114
5.3.20 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
5.3.21 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
5.3.22 Voltage reference buffer characteristics . . . . . . . . . . . . . . . . . . . . . . . 120
5.3.23 Digital-to-analog converter characteristics . . . . . . . . . . . . . . . . . . . . . . 122
5.3.24 Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
5.3.25 Timers characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
5.3.26 Communication interfaces characteristics . . . . . . . . . . . . . . . . . . . . . . 128
6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134

6.1 UFQFPN48 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
DS13105 Rev 8 5/145

6
Contents STM32WLE5/E4xx
6.2 WLCSP59 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137

6.3 UFBGA73 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
6.4 Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
7 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
6/145 DS13105 Rev 8

STM32WLE5/E4xx List of tables
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table 2. Main features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 3. Access status versus RDP level and execution mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 4. Sub-GHz radio transmit high output power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 5. FSK mode intermediate frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 6. LoRa mode intermediate frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 7. Functionalities depending on system operating mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 8. Low-power mode summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 9. MCU and sub-GHz radio operating modes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 10. Peripherals interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 11. DMA1 and DMA2 implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 12. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 13. Internal voltage reference calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 14. Timer features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 15. I2C implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 16. USART/LPUART features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 17. SPI and SPI/I2S implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 18. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 19. STM32WLE5/E4xx pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Table 20. Alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 21. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 22. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table 23. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table 24. Main performances at VDD = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 25. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 26. Operating range of RF pads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 27. Sub-GHz radio power consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Table 28. Sub-GHz radio power consumption in transmit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 29. Sub-GHz radio general specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Table 30. Sub-GHz radio receive mode specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Table 31. Sub-GHz radio transmit mode specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Table 32. Sub-GHz radio power management specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 33. Operating conditions at power-up/power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 34. Embedded reset and power-control block characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 75
Table 35. Embedded internal voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Table 36. Current consumption in Run and LPRun modes, CoreMark code with data
running from Flash memory, ART enable (cache ON, prefetch OFF) . . . . . . . . . . . . . . . . 78
Table 37. Current consumption in Run and LPRun modes, CoreMark code
with data running from SRAM1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Table 38. Typical current consumption in Run and LPRun modes, with different codes
running from Flash memory, ART enable (cache ON, prefetch OFF) . . . . . . . . . . . . . . . . 80
Table 39. Typical current consumption in Run and LPRun modes,
with different codes running from SRAM1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 40. Current consumption in Sleep and LPSleep modes, Flash memory ON . . . . . . . . . . . . . . 84
Table 41. Current consumption in LPSleep mode, Flash memory in power-down . . . . . . . . . . . . . . . 84
Table 42. Current consumption in Stop 2 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Table 43. Current consumption during wakeup from Stop 2 mode . . . . . . . . . . . . . . . . . . . . . . . . . . 85
DS13105 Rev 8 7/145

9
List of tables STM32WLE5/E4xx

Table 48. Current consumption in Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Table 49. Current consumption during wakeup from Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . 88
Table 50. Current consumption in Shutdown mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Table 51. Current consumption in VBAT mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 52. Current under Reset condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 53. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Table 54. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Table 55. Regulator modes transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 56. HSE32 crystal requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 57. HSE32 oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Table 58. HSE32 TCXO regulator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Table 59. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 60. Low-speed external user clock characteristics – Bypass mode . . . . . . . . . . . . . . . . . . . . . 98
Table 61. HSI16 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 62. MSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100
Table 63. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Table 64. PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 65. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 66. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Table 67. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Table 68. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 69. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 70. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 71. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 72. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 73. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Table 74. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Table 75. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Table 76. Analog switches booster characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Table 77. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 78. Maximum ADC RAIN values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 79. ADC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 80. TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 81. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Table 82. VBAT charging characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Table 83. VREFBUF characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Table 84. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 85. DAC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 86. COMP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 87. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 88. IWDG min/max timeout period at 32 kHz (LSI). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Table 89. Minimum I2CCLK frequency in all I2C modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Table 90. I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 91. USART characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 92. SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Table 93. Dynamic JTAG characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Table 94. Dynamic SWD characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Table 95. UFQFPN48 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Table 96. UFBGA73 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
8/145 DS13105 Rev 8

STM32WLE5/E4xx List of tables
Table 97. UFBGA recommended PCB design rules (0.5 mm pitch BGA) . . . . . . . . . . . . . . . . . . . . 139
Table 98. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Table 99. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
DS13105 Rev 8 9/145

9
List of figures STM32WLE5/E4xx
List of figures
Figure 1. STM32WLE5/E4xx block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 2. sub-GHz radio system block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 3. High output power PA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 4. Low output power PA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5. Power-up/power-down sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 6. Power supply overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 7. Supply configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 8. Clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 9. UFQFPN48 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 10. UFBGA73 pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 11. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Figure 12. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Figure 13. Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Figure 14. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Figure 15. VREFINT versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Figure 16. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Figure 17. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Figure 18. HSI16 frequency versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Figure 19. Typical current consumption vs. MSI frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Figure 20. I/O input characteristics - VIL and VIH on all I/Os . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Figure 21. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Figure 22. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Figure 23. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Figure 24. VREFOUT_TEMP when VRS = 0. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 25. VREFOUT_TEMP when VRS = 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Figure 26. 12-bit buffered/non-buffered DAC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Figure 27. SPI timing diagram - Slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Figure 28. SPI timing diagram - Slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Figure 29. SPI timing diagram - Master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Figure 30. UFQFPN48 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Figure 31. UFQFPN48 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Figure 32. UFQFPN48 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
Figure 33. UFBGA73 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Figure 34. UFBGA73 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Figure 35. UFBGA73 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
10/145 DS13105 Rev 8

STM32WLE5/E4xx Introduction
1 Introduction
This document provides information on the STM32WLE5/E4xx microcontrollers.

For information on the Arm®(a) Cortex®-M4 core, refer to the Cortex®-M4 Technical
Reference Manual available from the www.arm.com website.
For information on LoRa® modulation, refer to the Semtech website
(https://www.semtech.com/technology/lora).
2 Description
The STM32WLE5/E4xx long-range wireless and ultra-low-power devices embed a powerful

and ultra-low-power LPWAN-compliant radio solution, enabling the following modulations:
LoRa®, (G)FSK, (G)MSK, and BPSK.
The LoRa® modulation is available in STM32WLx5xx only.
These devices are designed to be extremely low-power and are based on the
high-performance Arm® Cortex®-M4 32-bit RISC core operating at a frequency of up to
48 MHz. This core implements a full set of DSP instructions and an independent memory
protection unit (MPU) that enhances the application security.
The devices embed high-speed memories (Flash memory up to 256 Kbytes, SRAM up to
64 Kbytes), and an extensive range of enhanced I/Os and peripherals.
The devices also embed several protection mechanisms for embedded Flash memory and
SRAM: readout protection, write protection and proprietary code readout protection.
These devices offer a 12-bit ADC, a 12-bit DAC low-power sample-and-hold, two
ultra-low-power comparators associated with a high-accuracy reference voltage generator.
The devices embed a low-power RTC with a 32-bit sub-second wakeup counter, one 16-bit
single-channel timer, two 16-bit four-channel timers (supporting motor control), one 32-bit
four-channel timer and three 16-bit ultra-low-power timers.
These devices also embed two DMA controllers (7 channels each) allowing any transfer
combination between memory (Flash memory, SRAM1 and SRAM2) and peripheral, using
the DMAMUX1 for flexible DMA channel mapping.
a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
DS13105 Rev 8 11/145

14
Description STM32WLE5/E4xx
The devices also feature the standard and advanced communication interfaces listed below:
• two USART (supporting LIN, smartcard, IrDA, modem control and ISO7816)
• one low-power UART (LPUART)
• three I2C (SMBus/PMBus)
• two SPIs (up to 16 MHz, one supporting I2S)
• semaphores for processor firmware process synchronization
The operating temperature/voltage ranges are –40 °C to +105 °C (+85 °C with radio)(a) from
a 1.8 V to 3.6 V power supply. A comprehensive set of power-saving modes allows the
design of low-power applications.
The devices integrate a high-efficiency SMPS step-down converter and independent power
supplies for ADC, DAC and comparator analog inputs.
A VBAT dedicated supply allows the LSE 32.768 kHz oscillator, the RTC and the backup
registers to be backed up. The devices can maintain these functions even if the main VDD is
not present, through a CR2032-like battery, a supercap or a small rechargeable battery.
Table 2. Main features and peripheral counts

STM32WLE5Cx STM32WLE5Jx STM32WLE5Ux
Feature
CPU Arm Cortex-M4

Maximum CPU frequency (MHz) 48
Flash memory density (Kbytes) 256/128/64
SRAM1 32/16/0
SRAM density (Kbytes)
SRAM2 32/32/20
Available on STM32WLE5xx devices.
LoRa
Not available on STM32WLE4xx devices
Radio (G)FSK
(G)MSK Yes
BPSK
Low output power (up to
15 dBm)
Radio power amplifier Yes
High output power (up to
22 dBm)
General purpose 4
Timer Low-power 3
SysTick 1
a. Devices with suffix 6 operate up to 85 °C. Devices with suffix 7 can operate up to 105 °C except radio.
12/145 DS13105 Rev 8

STM32WLE5/E4xx Description
Table 2. Main features and peripheral counts (continued)

Feature
SPI/I2S 2 (1 supporting I2S)
Communication I2C 3
interface USART 2
LPUART 1
Independent 1
Watchdog
Window 1
RTC (with wakeup counter) 1
DMA (7 channels) 2
Semaphores 1
AES 256 bits 1
RNG 1
PKA 1
PCROP, RDP, WRP 1
Security
CRC 1
64-bit UID compliant with
1
IEEE 802-2001 standard
96-bit die ID 1
Tamper pins 3 3 2
Wakeup pins 3 3 2
GPIOs 29 43 22
ADC (number of channels, ext + int) 1 (9 + 4) 1 (12 + 4) 1 (8 + 4)
DAC (number of channels) 1 (1)
Internal VREFBUF No Yes No
Analog comparator 2
Operating voltage 1.8 to 3.6 V
Ambient operating temperature –40 °C to +105 °C / –40 °C to +85 °C (with radio)
Junction temperature –40 °C to +125 °C / –40 °C to +105 °C
UFQFPN48 UFBGA73
Package WLCSP59
(7 x 7 mm) (5 x 5 mm)
DS13105 Rev 8 13/145

14
Description STM32WLE5/E4xx
Figure 1. STM32WLE5/E4xx block diagram
SUBGHZ
Sub-GHz LDO/SMPS
SPI
radio HSE32
32 MHz
Flash interface arbiter

SRAM2
Flash memory
RTC LSE
ART Accelerator
JTAG/SWD
backup memory 32 kHz
256-Kbyte
TAMP
+
Backup IWDG
LSI
32 kHz
domain
HSI 1 %
16 MHz
PLL
MSI 5 %
NVIC 0.1-48MHz
Cortex-M4 SRAM1 Power supply
AHB3
(DSP) POR/PDR/BOR/PVD/PVM
≤ 48 MHz RCC
AHB1 and AHB2 SYSCFG/
MPU COMP/VREF
PWR
DMA1 (7 channels) EXTI WWDG
DMA2 (7 channels) HSEM SPI1
DMAMUX RNG SPI2S2
GPIO ports A,B,C,H AES I2C1
CRC PKA I2C2
DAC (12 bits) I2C3

Temperature sensor
LPUART1 TIM1
ADC (12 bits ULP,
2 Msps, 12 channels)
LPTIM1 TIM2
APB1 and APB 2
LPTIM2 USART1 TIM16
LPTIM3 USART2 TIM17
MSv64324V1
14/145 DS13105 Rev 8

STM32WLE5/E4xx Functional overview
3 Functional overview
3.1 Architecture
The devices embed a sub-GHz RF subsystem that interfaces with a generic microcontroller
subsystem using an Arm Cortex-M4 (called CPU).
An RF low-layer stack is needed and is to be run on CPU with the host application code.
The RF subsystem communication is done through an internal SPI interface.
3.2 Arm Cortex-M core

With its embedded Arm core, the STM32WLE5/E4xx devices are compatible with all
Arm tools and software.
Figure 1 shows the general block diagram of the STM32WLE5/E4xx devices.
Arm Cortex-M4
The Arm Cortex-M4 is a processor for embedded systems. It has been developed to provide
a low-cost platform that meets the needs of MCU implementation, with a reduced pin count
and low-power consumption, while delivering outstanding computational performance and
an advanced response to interrupts.
The Arm Cortex-M4 32-bit RISC processor features exceptional code-efficiency, delivering
the high-performance expected from an Arm core in the memory size usually associated
with 8- and 16-bit devices.
This processor supports a set of DSP instructions that allow efficient signal processing and
complex algorithm execution.
3.3 Adaptive real-time memory accelerator (ART Accelerator)

The ART Accelerator is a memory accelerator that is optimized for STM32 industry-standard
Arm Cortex-M4 processor. The ART Accelerator balances the inherent performance
advantage of the Arm Cortex-M4 over Flash memory technologies, that normally require the
processor to wait for the Flash memory at higher frequencies.
To release the processor near 60 DMIPS performance at 48 MHz, the ART Accelerator
implements an instruction prefetch queue and branch cache, that increases the program
execution speed from the 64-bit Flash memory. Based on CoreMark benchmark, the
performance achieved thanks to the ART Accelerator is equivalent to 0 wait state program
execution from Flash memory at a CPU frequency up to 48 MHz.
3.4 Memory protection unit (MPU)

The memory protection unit (MPU) is used to manage the CPU accesses to memory, to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to eight protected areas that can in turn be
divided up into eight subareas. The protection area sizes are between 32 bytes and the
whole 4 Gbytes of addressable memory.
DS13105 Rev 8 15/145

48
Functional overview STM32WLE5/E4xx
The MPU is especially helpful for applications where some critical or certified code must be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-
time operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
3.5 Memories
3.5.1 Embedded Flash memory

The Flash memory interface manages the accesses from CPU AHB ICode/DCode to the
Flash memory. It implements the access, the erase and program Flash memory operations,
and the read and write protection.
The main features of the Flash memory are listed below:
• Memory organization: 1 bank
– main memory: up to 256 Kbytes
– page size: 2 Kbytes
• 72-bit wide data read (64 bits plus 8 ECC bits)
• 72-bit wide data write (64 bits plus 8 ECC bits)
• Page erase and mass erase
Flexible protections can be configured thanks to option bytes:
• Readout protection (RDP) to protect the whole memory. Three levels are available:
– Level 0: no readout protection
– Level 1: memory readout protection. The Flash memory cannot be read from or
written to if either debug features are connected, boot in SRAM or bootloader is
selected.
– Level 2: chip readout protection. Debug features (JTAG and serial wire), boot in
SRAM and bootloader selection are disabled (JTAG fuse). This selection is
irreversible.
Table 3. Access status versus RDP level and execution mode

Debug, boot from SRAM or boot from
User execution
RDP system memory (loader)
Area
level
Read Write Erase Read Write Erase
1 Yes Yes Yes No No No

Main memory
2 Yes Yes Yes NA NA NA
1 Yes No No Yes No No
System memory
2 Yes No No NA NA NA
1 Yes Yes Yes Yes Yes Yes
Option bytes
2 Yes No(1) No(1) NA NA NA
16/145 DS13105 Rev 8

Table 3. Access status versus RDP level and execution mode (continued)
Debug, boot from SRAM or boot from
User execution
RDP system memory (loader)
Area
level
Read Write Erase Read Write Erase
1 Yes Yes NA(2) No No NA(2)

Backup registers
2 Yes Yes NA NA NA NA
1 Yes Yes Yes(2) No No No(2)
SRAM2
2 Yes Yes Yes NA NA NA
1. The option byte can be modified by the sub-GHz radio.
2. Erased when RDP changes from Level 1 to Level 0.
• Write protection (WRP): the protected area is protected against erasing and
programming. Two areas can be selected, with 4-Kbyte granularity.
• Proprietary code readout protection (PCROP): two parts of the Flash memory can be
protected against read and write from third parties. The protected area is execute-only:
it can only be reached by the STM32 CPU, as an instruction code, while all other
accesses (DMA, debug and CPU data read, write and erase) are strictly prohibited.
Two areas can be selected, with 2-Kbyte granularity. An additional option bit
(PCROP_RDP) is used to select if the PCROP area is erased or not when the RDP
protection is changed from Level 1 to Level 0.
The whole non-volatile memory embeds the error correction code (ECC) feature supporting:
• single error detection and correction
• double error detection
• address of the ECC fail can be read in the FLASH_ECCR register
3.5.2 Embedded SRAM

The devices feature up to 64 Kbytes of embedded SRAM, split in two blocks:
• SRAM1: up to 32 Kbytes mapped at address 0x2000 0000
• SRAM2: up to 32 Kbytes located at address 0x2000 8000 (contiguous to SRAM1), also
mirrored at 0x1000 0000, with hardware parity check (this SRAM can be retained in
Standby mode)
The SRAMs can be accessed in read/write with 0 wait states for all CPU clock speeds.
DS13105 Rev 8 17/145

48
3.6 Security management

The devices contain many security blocks, such as:
• RNG
• AES: 128-and 256-bit AES, supporting ECB, CBC, CTR, GCM, GMAC and CCM
chaining modes
• PKA:
– modular arithmetic including exponentiation with maximum modulo size of
3136 bits
– elliptic curves over prime field scalar multiplication, ECDSA signature, ECDSA
verification with maximum modulo size of 521 bits
• cyclic redundancy check calculation unit (CRC)
3.7 Boot modes

At startup, BOOT0 pin and BOOT1 option bit are used to select one of the following boot
options:
• Boot from user Flash memory
• Boot from boot system memory (where embedded bootloader is located)
• Boot from embedded SRAM
The bootloader makes possible to download code from USART or SPI.
3.8 Sub-GHz radio
3.8.1 Introduction
The sub-GHz radio is an ultra-low-power sub-GHz radio operating in the 150 - 960 MHz ISM
band. LoRa, (G)FSK/(G)MSK modulation in transmit and receive, and (D)BPSK in transmit
only, allow an optimal trade-off between range, data rate and power consumption. This sub-
GHz radio is compliant with the LoRaWAN® specification v1.0 and radio regulations such as
ETSI EN 300 220, EN 300 113, EN 301 166, FCC CFR 47 part 15, 24, 90, 101 and the ARIB
STD-T30, T-67, T-108.
The sub-GHz radio consists of:
• an analog front-end transceiver, capable of outputting up to + 15 dBm maximum power
on its RFO_LP pin and up to + 22 dBm maximum power on RFO_HP pin
• a digital modem bank providing the following modulation schemes:
– LoRa Rx/Tx with bandwidth (BW) from 7.8 - 500 kHz, spreading factor (SF)
5 - 12, bit rate (BR) from 0.013 to 17.4 Kbit/s (real bitrate)
– FSK and GFSK Rx/Tx with BR from 0.6 to 300 Kbit/s
– (G)MSK Tx with BR from 0 to 10 Kbit/s
– BPSK and DBPSK TX only with bitrate for 100 and 600 bit/s
• a digital control including all data processing and sub-GHz radio configuration control
• a high-speed clock generation
18/145 DS13105 Rev 8

3.8.2 General description

The sub-GHz radio provides an internal processing unit to handle communication with the
system CPU. Communication is handled by commands sent over the SPI interface, and a
set of interrupts is used to signal events. BUSY information signals operation activity and is
used to indicate when the sub-GHz radio commands cannot be received.
The block diagram of the sub-GHz radio system is shown in the figure below.
Figure 2. sub-GHz radio system block diagram
VDDPA Sub-GHz radio

VR_PA
SUBGHZSPI
FSK
RFO_HP modem BUSY
RFO_LP Interrups
RFI_P Sub-GHz Radio Data
RF frontend control and HSEON
RFI_N control
LoRa
HSEBYPPWR
PB0_VDDTCXO modem
(note)
OSC_IN HSERDY
OSC_OUT HSE32 hse32
Note: LoRa modem is only available on STM32WLE5xx devices. MSv62615V1
3.8.3 Transmitter
The transmit chain comprises the modulated output from the modem, that directly
modulates the RF-PLL. An optional pre-filtering of the bit stream can be enabled to reduce
the power in the adjacent channel also dependent on the selected modulation scheme. The
modulated signal from the RF-PLL directly drives the high output power PA (HP PA) or low
output power PA (LP PA).
Transmitter high output power

Transmit high output power up to + 22 dBm, is supported through the RFO_HP RF pin.
DS13105 Rev 8 19/145

48
For this, the REG PA must be supplied directly from VDD on VDDSMPS pin, as shown in the
figure below.
The output power range is programmable in 32 steps of ~ 1 dB. The power amplifier
ramping timing is also programmable.This allows adaptation to meet radio regulation
requirements.
Figure 3. High output power PA
LDO mode SMPS mode

VDD VDD
VDDSMPS (1.8 to 3.6V) VDDSMPS (1.8 to 3.6V)
VLXSMPS VLXSMPS
LDO/SMPS LDO/SMPS
VFBSMPS (1.55V) VFBSMPS (1.55V)
VDD VDD
VDDPA VDDPA
REG VR_PA (up to 3.1V) REG VR_PA (up to 3.1V)

PA PA
RFO_HP RFO_HP
HP PA HP PA
Note: Use of the SMPS is optional. When SMPS is not used, the BOM can be reduced by removing the coil
between VLXSMPS and VFBSMPS pins. MSv62616V2
The table below gives the maximum transmit output power versus the VDDPA supply level.
Table 4. Sub-GHz radio transmit high output power

VDDPA supply (V) Transmit output power (dBm)
3.3 + 22
2.7 + 20
2.4 + 19
1.8 + 16
Transmitter low output power

The transmit low output power up to + 15 dBm on full VDD range (1.8 to 3.6 V), is supported
through the RFO_LP RF pin. For this, the REG PA must be supplied from the regulated
VFBSMPS supply at 1.55 V, as shown in the figure below.
The output power range is programmable in 32 steps of ~1 dB. The power amplifier ramping
timing is also programmable.This allows adaptation to meet radio regulation requirements.
20/145 DS13105 Rev 8

Figure 4. Low output power PA

LDO mode SMPS mode
VDD VDD
VDDSMPS (1.8 to 3.6V) VDDSMPS (1.8 to 3.6V)
VLXSMPS VLXSMPS
LDO/SMPS LDO/SMPS
VFBSMPS (1.55V) VFBSMPS (1.55V)
VDDPA VDDPA
REG VR_PA (up to 1.35V) REG VR_PA (up to 1.35V)

PA PA
RFO_LP RFO_LP
LP PA LP PA
Note: Use of the SMPS is optional. When SMPS is not used, the BOM can be reduced by removing the coil
between VLXSMPS and VFBSMPS pins. MSv62617V2
3.8.4 Receiver
The receive chain comprises a differential low-noise amplifier (LNA), a down-converter to
low-IF by mixer operation in quadrature configuration. The I and Q signals are low pass
filtered and a Ʃ∆ ADC converts them into the digital domain. In the digital modem, the
signals are decimated, further down converted and channel filtered. The demodulation is
done according to the selected modulation scheme.
The down mixing to low-IF is done by mixing the receive signal with the local RF-PLL
located in the negative frequency, where -flo = -frf + -fif. (where flo is the local RF-PLL
frequency, frf is the received signal and fif is the intermediate frequency). The wanted signal
is located at frf = flo + fif.
The receiver features automatic I and Q calibration, that improves image rejection. The
calibration is done automatically at startup before using the receiver, and can be requested
by command.
The receiver supports LoRa, (G)MSK and (G)FSK modulations.
3.8.5 RF-PLL
The RF-PLL is used as the frequency synthesizer for the generation of the local oscillator
frequency (flo) for both transmit and receive chains. The RF-PLL uses auto calibration and
uses the 32 MHz HSE32 reference. The sub-GHz radio covers all continuous frequencies in
the range between 150 to 960 MHz.
DS13105 Rev 8 21/145

48
3.8.6 Intermediate frequencies

The sub-GHz radio receiver operates mostly in low-IF configuration, except for specific high-
bandwidth settings.
Table 5. FSK mode intermediate frequencies

Setting name Bandwidth (kHz) fif (kHz)
RX_BW_467 467.0
RX_BW_234 234.3
RX_BW_117 117.3
RX_BW_58 58.6 250
RX_BW_29 29.3
RX_BW_14 14.6
RX_BW_7 7.3
RX_BW_373 373.6
RX_BW_187 187.2
RX_BW_93 93.8
RX_BW_46 46.9 200
RX_BW_23 23.4
RX_BW_11 11.7
RX_BW_5 5.8
RX_BW_312 312.0
RX_BW_156 156.2
RX_BW_78 78.2
RX_BW_39 39.0 167
RX_BW_19 19.5
RX_BW_9 9.7
RX_BW_4 4.8
Table 6. LoRa mode intermediate frequencies

LORA_BW_500 500 0
LORA_BW_250 250
LORA_BW_125 125 250
LORA_BW_62 62.5
LORA_BW_41 41.67 167
LORA_BW_31 31.25 250
LORA_BW_20 20.83 167
22/145 DS13105 Rev 8

Table 6. LoRa mode intermediate frequencies (continued)

LORA_BW_15 15.63 250

LORA_BW_10 10.42 167
LORA_BW_7 7.81 250
3.9 Power supply management

The devices embed two different regulators: one LDO and one DC/DC (SMPS). The SMPS
can be optionally switched-on by software to improve the power efficiency. As LDO and
SMPS operate in parallel, the SMPS switch-on is transparent to the user and only the power
efficiency is affected.
3.9.1 Power supply schemes

The devices require a VDD operating voltage supply between 1.8 V and 3.6 V. Several
independent supplies (VDDSMPS, VFBSMPS, VDDA, VDDRF) can be provided for specific
peripherals:
• VDD = 1.8 V to 3.6 V
VDD is the external power supply for the I/Os, the system analog blocks such as reset,
power management, internal clocks and low-power regulator. It is provided externally
through VDD pins.
• VDDSMPS = 1.8 V to 3.6 V
VDDSMPS is the external power supply for the SMPS step-down converter. It is provided
externally through VDDSMPS supply pin and must be connected to the same supply as
VDD.
• VFBSMPS = 1.45 V to 1.62 V (1.55 V typical)
VFBSMPS is the external power supply for the main system regulator. It is provided
externally through VFBSMPS pin and is supplied through the SMPS step-down
converter.
• VDDA = 0 V to 3.6 V (DAC minimum voltage is 1.71 V without buffer and 1.8 V with
buffer. COMP and ADC minimum voltage is 1.62 V. VREFBUF minimum voltage is
2.4 V)
VDDA is the external analog power supply for A/D converters, D/A converters, voltage
reference buffer, and comparators. The VDDA voltage level is independent from the VDD
voltage (see power-up and power-down limitations below) and must preferably be
connected to VDD when these peripherals are not used.
• VDDRF = 1.8 V to 3.6 V
VDDRF is an external power supply for the radio. It is provided externally through the
VDDRF pin and must be connected to the same supply as VDD.
• VDDRF1V5 = 1.45 V to 1.62 V
VDDRF1V5 is an external power supply for the radio. It is provided externally through the
VDDRF1V5 pin and must be connected externally to VFBSMPS.
• VBAT = 1.55 V to 3.6 V
VBAT is the power supply for RTC, TAMP, external clock 32 kHz oscillator and backup
registers (through power switch) when VDD is not present.
DS13105 Rev 8 23/145

48
• VREF-, VREF+
VREF+ is the input reference voltage for ADC and DAC. It is also the output of the
internal voltage reference buffer when enabled.
– When VDDA < 2 V, VREF+ must be equal to VDDA.
– When VDDA ≥ 2 V, VREF+ must be between 2 V and VDDA.
VREF+ can be grounded when ADC/DAC is not active. The internal voltage reference
buffer supports the following output voltages, configured with VRS bit in the
VREFBUF_CSR register:
– VREF+ around 2.048 V: this requires VDDA ≥ 2.4 V.
– VREF+ around 2.5 V: this requires VDDA ≥ 2.8 V.
During power up and power down, the following power sequence is required:
1. When VDD < 1 V other power supplies (VDDA) must remain below VDD + 300 mV.
During power down, VDD can temporarily become lower then other supplies only if the
energy provided to the device remains below 1 mJ. This allows external decoupling
capacitors to be discharged with different time constants during this transient phase.
2. When VDD > 1 V, all other power supplies (VDDA) become independent.
An embedded linear voltage regulator is used to supply the internal digital power VCORE.
VCORE is the power supply for digital peripherals, SRAM1 and SRAM2. The Flash memory
is supplied by VCORE and VDD. VCORE is split in two parts: VDDO part and an interruptible
part VDDI.
Figure 5. Power-up/power-down sequence

V
3.6
VDDA
VDD
VBOR0
0.3
Power-on Operating mode Power-down time

Invalid supply area VDDA < VDD + 300 mV VDDA independent from VDD
MSv68044V1
Note: VDD, VDDRF and VDDSMPS must be wired together, so they can follow the same voltage
sequence.
24/145 DS13105 Rev 8

Figure 6. Power supply overview
VSW VBAT
VDD
en VDDSMPS
POR
LDO/SMPS VLXSMPS
FW mode
mode
VFBSMPS
VDDRF1V5
LPR MR
RFLDO
VLP VMAIN
VBKP VRF
VDDO VDDI
MSv50973V1
The different supply configurations are shown in the figure below.
Figure 7. Supply configurations
VDD VDD
VDDSMPS VDDSMPS
VLXSMPS LDO/SMPS VLXSMPS LDO/SMPS
VFBSMPS VFBSMPS
VDDRF1V5 VDDRF1V5
MR LPR MR LPR
RF RF
LDO LDO
LDO/SMPS supply LDO supply

MSv50974V1
DS13105 Rev 8 25/145

48
The LDO or SMPS step-down converter operating mode can be configured by one of the
following:
• by the MCU using the SMPSEN setting in PWR control register 5 (PWR_CR5), that
depends upon the MCU system operating mode (Run, Stop, Standby or Shutdown).
• by the sub-GHz radio using SetRegulatorMode() command and the sub-GHz radio
operating mode (Sleep, Calibrate, Standby, Standby with HSE32 or Active).
After any POR and NRST reset, the LDO mode is selected. The SMPS selection has priority
over LDO selection.
While the sub-GHz radio is in Standby with HSE32 or in Active mode, the supply mode is
not altered until the sub-GHz radio enters Standby or Sleep mode. The sub-GHz radio
activity may add a delay for entering the MCU software requested supply mode.
The LDO or SMPS supply mode can be checked with the SMPSRDY flag in power status
register 2 (PWR_SR2).
Note: When the radio is active, the supply mode is not changed until after the radio activity is
finished.
During Stop 1, Stop 2 and Standby modes, when the sub-GHz radio is not active, the LDO
or SMPS step-down converter is switched off. When exiting low-power modes (except
Shutdown), the SMPS step-down converter is set by hardware to the mode selected by the
SMPSEN bit in PWR control register 5 (PWR_CR5). SMPSEN is retained in Stop and
Standby modes.
Independently from the MCU software selected supply operating mode, the sub-GHz radio
allows the supply mode selection while the sub-GHz radio is active (thanks to the sub-GHz
radio SetRegulatorMode()command).
The maximum load current delivered by the SMPS can be selected by the sub- GHz radio
SUBGHZ_SMPSC2R register.
The inrush current of the LDO and SMPS step-down converter can be controlled via the
sub- GHz radio SUBGHZ_PCR register. This information is retained in all but the sub-GHz
radio Deep-sleep mode.
The SMPS needs a clock to be functional. If for any reason this clock stops, the device may
be destroyed. To avoid this situation, a clock detection is used to, in case of a clock failure,
switch off the SMPS and enable the LDO. The SMPS clock detection is enabled by the sub-
GHz radio SUBGHZ_SMPSC0R.CLKDE. By default, the SMPS clock detection is disabled
and must be enabled before enabling the SMPS.
Danger: Before enabling the SMPS, the SMPS clock detection must be
enabled in the sub-GHz radio SUBGHZ_SMPSC0R.CLKDE.
3.9.2 Power supply supervisor

The devices integrate a power-on reset/power-down reset, coupled with a Brownout reset
(BOR) circuitry.
BOR0 level cannot be disabled. Other BOR levels can be enabled by user option. When
enabled, BOR is active in all power modes except in Shutdown
26/145 DS13105 Rev 8

Five BOR thresholds can be selected through option bytes.

During power-on, BOR keeps the device under reset until the supply voltage VDD reaches
the specified VBORx threshold:
• When VDD drops below the selected threshold, a device reset is generated.
• When VDD is above the VBORx upper limit, the device reset is released and the system
can start.
The devices feature an embedded PVD (programmable voltage detector) that monitors the
VDD power supply and compares it with the VPVD threshold. An interrupt can be generated
when VDD drops below the VPVD threshold and/or when VDD is higher than the VPVD
threshold. The interrupt service routine can then generate a warning message and/or put
the MCU into a safe state.
The PVD is enabled by software and can be configured to monitor the VDD supply level
needed for the sub-GHz radio operation. For this, the PVD must select its lowest threshold,
and the PVD and the wakeup must be enabled by the EWPVD bit in PWR_CR3 register.
Only a voltage drop below the PVD level generates a wakeup event.
In addition, the devices embed a PVM (peripheral voltage monitor) that compares the
independent supply voltage VDDA with a fixed threshold to ensure that the peripheral is in its
functional supply range.
Finally, a radio end-of-life monitor provides information on the VDD supply when VDD is too
low to operate the sub-GHz radio. When reaching the EOL level, the software must stop all
radio activity in a safe way.
3.9.3 Linear voltage regulator

Two embedded linear voltage regulators supply all the digital circuitries, except for the
Standby circuitry and the Backup domain. The main regulator (MR) output voltage (VCORE)
can be programmed by software to two different power ranges (range 1 and range 2), to
optimize the consumption depending on the system maximum operating frequency.
The voltage regulators are always enabled after a reset. Depending on the application
modes, the VCORE supply is provided either by the main regulator or by the low-power
regulator (LPR).
When MR is used, a dynamic voltage scaling is proposed to optimize power as follows:
• range 1: high-performance range
The system clock frequency can be up to 48 MHz. The Flash memory access time for
read access is minimum. Write and erase operations are possible.
• range 2: low-power range
The system clock frequency can be up to 16 MHz.The Flash memory access time for a
read access is increased as compared to range 1. Write and erase operations are
possible.
Note: MR is supplied by VDD during power-on or at wakeup from Stop1, Stop2, Standby or
Shutdown mode. MR is powered by LDO/SMPS after these transition phases.
3.9.4 VBAT operation

The VBAT pin is used to power the device VBAT domain (RTC, LSE and backup registers)
from an external battery, an external super-capacitor, or from VDD when no external battery
DS13105 Rev 8 27/145

48
nor an external super-capacitor are present. Three anti-tamper detection pins are available
in VBAT mode.
VBAT operation is automatically activated when VDD is not present.
An internal VBAT battery charging circuit is embedded and can be activated when VDD is
present.
Note: When the microcontroller is supplied only from VBAT, external interrupts and RTC
alarm/events do not exit it from VBAT operation.
3.10 Low-power modes

The devices support several low-power modes to achieve the best compromise between
low-power consumption, short startup time, available peripherals and available wakeup
sources.
By default, the microcontroller is in Run mode, range 1, after a system or a power-on reset.
It is up to the user to select one of the low-power modes described below:
• Sleep mode: CPU clock off, all peripherals including CPU core peripherals (among
them NVIC, SysTick) can run and wake up the CPU when an interrupt or an event
occurs.
• Low-power run mode (LPRun): when the system clock frequency is reduced below
2 MHz. The code is executed from the SRAM or from the Flash memory. The regulator
is in low-power mode to minimize the operating current.
• Low-power sleep mode (LPSleep): entered from the LPRun mode.
• Stop 0 and Stop 1 modes: the content of SRAM1, SRAM2 and of all registers is
retained. All clocks in the VCORE domain are stopped. PLL, MSI, HSI16 and HSE32 are
disabled. LSI and LSE can be kept running.
RTC can remain active (Stop mode with RTC, Stop mode without RTC). The sub-GHz
radio may remain active independently from the CPU.
Some peripherals with the wakeup capability can enable HSI16 RC during the Stop
mode to detect their wakeup condition.
Stop 1 offers the largest number of active peripherals and wakeup sources, a smaller
wakeup time but a higher consumption compared with Stop 2.
In Stop 0 mode, the main regulator remains on, resulting in the fastest wakeup time but
with much higher consumption. The active peripherals and wakeup sources are the
same as in Stop 1 mode that uses the low-power regulator.
The system clock, when exiting Stop 0 or Stop 1 mode, can be either MSI up to 48 MHz
or HSI16, depending on the software configuration.
• Stop 2 mode: part of the VCORE domain is powered off. Only SRAM1, SRAM2, CPU
and some peripherals preserve their contents (see Table 7).
All clocks in the VCORE domain are stopped. PLL, MSI, HSI16 and HSE32 are disabled.
LSI and LSE can be kept running.
RTC can remain active (Stop 2 mode with RTC, Stop 2 mode without RTC). The sub-
GHz radio may also remain active independent from the CPU.
Some peripherals with the wakeup capability can enable HSI16 RC during the Stop 2
mode to detect their wakeup condition (see Table 7).
The system clock when exiting from Stop 2 mode, can be either MSI up to 48 MHz or
28/145 DS13105 Rev 8

HSI16, depending on the software configuration.

• Standby mode: VCORE domain is powered off. However, it is possible to preserve the
SRAM2 content as detailed below:
– Standby mode with SRAM2 retention when the RRS bit is set in the PWR control
register 3 (PWR_CR3). In this case, SRAM2 is supplied by the low-power
regulator.
– Standby mode when the RRS bit is cleared in the PWR control register 3
(PWR_CR3). In this case the main regulator and the low-power regulator are
powered off.
All clocks in the VCORE domain are stopped. PLL, MSI, HSI16 and HSE32 are disabled.
LSI and LSE can be kept running.
Th RTC can remain active (Standby mode with RTC, Standby mode without RTC). The
sub-GHz radio and the PVD may also remain active when enabled independent from
the CPU. In Standby mode, the PVD selects its lowest level.
The system clock, when exiting Standby modes, is MSI at 4 MHz.
• Shutdown mode: VCORE domain is powered off. All clocks in the VCORE domain are
stopped. PLL, MSI, HSI16, LSI and HSE32 are disabled. LSE can be kept running. The
system clock when exiting the Shutdown mode, is MSI at 4 MHz. In this mode, the
supply voltage monitoring is disabled and the product behavior is not guaranteed in
case of a power voltage drop.
The table below summarizes the peripheral features over all available modes. Wakeup
capability is detailed in gray cells.
Table 7. Functionalities depending on system operating mode(1)

Stop 0 Stop 1 Stop 2 Standby Shutdown
Wakeup capability
Wakeup capability
Wakeup capability
Wakeup capability
Wakeup capability
LPSleep
LPRun
Sleep
VBAT
Run
Peripheral
- - - - -
CPU Y R Y R R - R - R - - - - - -
Sub-GHz radio system O O O O O O O O O O O O - - -
(2)
Flash memory O
Y O(2) O(3) (3) R - R - R - R - R - R
(up to 256 Kbytes)
Flash memory interface Y Y Y Y R - R - R - - - - - -
(2)
SRAM1 Y O Y O(2) R - R - R - - - - - -
SRAM2 Y O(2) Y O(2) R - R - R - O(4) - - - -
Backup registers Y Y Y Y R - R - R - R - R - R
Brownout reset (BOR) Y Y Y Y Y Y Y Y Y Y Y Y - - -
Programmable voltage
O O O O O O O O O O O(5) O(5) - - -
detector (PVD)
Peripheral voltage monitor
O O O O O O O O O O - - - - -
(PVM3)
DS13105 Rev 8 29/145

48
Table 7. Functionalities depending on system operating mode(1) (continued)

Wakeup capability
Wakeup capability
Wakeup capability
Wakeup capability
Wakeup capability
LPSleep
LPRun
Sleep
VBAT
Run
Peripheral
- - - - -
DMAx (x = 1, 2) O O O O R - R - - - - - - - -
DMAMUX1 O O O O R - R - - - - - - - -
High-speed internal (HSI16) O O O O O(6) - O(6)
- O(6)
- - - - - -
(7) O(7) O(7) O(7) O(7) O(7)
High-speed external (HSE32) O O O - - - - - - -
Low-speed internal (LSI) O O O O O - O - O - O - - - -
Low-speed external (LSE) O O O O O - O - O - O - O - O
Multi-speed internal (MSI) O O O O O - O - O - - - - - -
Clock security system (CSS) O O O O R - R - - - - - - - -
Clock security system on LSE O O O O O O O O O O O O - - -
RTC/auto wakeup O O O O O O O O O O O O O O O
Number of tamper pins 3 3 3 3 3 O 3 O 3 O 3 O 3 O 3
(8)
USARTx (x= 1, 2) O O O O O O(8) O(8) O(8) - - - - - - -
Low-power UART (LPUART1) O O O O O(8) O(8) O(8) O(8) O(8) O(8) - - - - -
(9)
I2Cx (x = 1, 2) O O O O O O(9) O(9) O(9) - - - - - - -
(9)
I2C3 O O O O O O(9) O(9) O(9) O(9) O(9) - - - - -
SPI1 O O O O R - R - - - - - - - -
SUBGHZSPI O O O O R - R - - - - - - - -
SPI2S2 O O O O R - R - - - - - - - -
ADC O O O O R - R - - - - - - - -
DAC O O O O R - R - - - - - - - -
VREFBUF O O O O O - O - R - - - - - -
COMPx (x = 1, 2) O O O O O O O O O O - - - - -
Temperature sensor O O O O R - R - - - - - - - -
TIMx (x = 1, 2, 16, 17) O O O O R - R - - - - - - - -
LPTIM1 O O O O O O O O O O - - - - -
LPTIMx (x = 2, 3) O O O O O O O O - - - - - - -
Independent watchdog
O O O O O O O O O O O O - - -
(IWDG)
Window watchdog (WWDG) O O O O R - R - R - - - - - -
SysTick timer O O O O R - R - R - - - - - -
30/145 DS13105 Rev 8

Table 7. Functionalities depending on system operating mode(1) (continued)

Wakeup capability
Wakeup capability
Wakeup capability
Wakeup capability
Wakeup capability
LPSleep
LPRun
Sleep
VBAT
Run
Peripheral
- - - - -
True random number O O(1

(10) 0) R R R - R - - - - - - - -
generator (RNG)
AES hardware accelerator O O O O R - R - - - - - - - -
PKA hardware accelerator O O O O R - R - - - - - - - -
CRC calculation unit O O O O R - R - R - - - - - -
HSEM O R O R R - R - - - - - - - -
EXTI O O O O R O R O R O - - - - -
3
3
R pin (13)
GPIOs O O O O O O O O O O (11) pins -
s (12)
(12)
1. Legend: Y = Yes (enabled). O = Optional (disabled by default and can be enabled by software). R = data retained.
- = Not available. Gray cells indicate wakeup capability.
2. The SRAM clock can be gated on or off.
3. Flash memory can be placed in power-down mode.
4. The SRAM2 content can optionally be retained when the PWR_CR3.RRS bit is set.
5. Only when the sub-GHz radio is active.
6. Some peripherals with wakeup from Stop capability can request HSI16 to be enabled. In this case, HSI16 is woken up by
the peripheral, and only feeds the peripheral that requested it. HSI16 is automatically put off when the peripheral does not
need it anymore.
7. HSE32 can be used by sub-GHz radio system.
8. USART reception is functional in Stop 0 and Stop 1 modes. LPUART1 reception is functional is Stop 0, Stop 1, and Stop 2
modes. LPUART1 generates a wakeup interrupt on Start address match or received frame event.
9. I2Cx (x= 1, 2) address detection is functional in Stop 0 and Stop 1 modes. I2C3 address detection is functional in Stop 0,
Stop 1 and Stop 2 modes. I2C3 generates a wakeup interrupt in case of address match.
10. Voltage scaling range 1 only.
11. I/Os can be configured with internal pull-up, pull-down or floating in Standby mode.
12. The I/Os with wakeup from Standby/Shutdown capability are PA0, PC13 and PB3.
13. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode, but the configuration is lost when
exiting the Shutdown mode.
DS13105 Rev 8 31/145

48
Table 8. Low-power mode summary

Voltage
Wakeup Wakeup regulators
Mode name Entry Effect on clocks
source(1) system clock
MR LPR
Sleep WFI or return CPU clock OFF

Any interrupt Same as before
(Sleep-now or from ISR ON ON
entering Sleep mode No effect on other clocks
Sleep-on-exit) WFE Wakeup event or analog clock sources
Same as LPRun
LPRun Set LPR bit Clear LPR bit None OFF ON
clock
Set LPR bit +
WFI or return Any interrupt Same as before CPU clock OFF OFF ON
LPSleep from ISR entering LPSleep No effect on other clocks
Set LPR bit + mode or analog clock sources
Wakeup event OFF ON
WFE
LPMS = 0b000 +
SLEEPDEEP bit
Stop 0 ON
+ WFI or return
from ISR or WFE
HSI16 when
LPMS = 0b001 + Any EXTI line STOPWUCK = 1 in
SLEEPDEEP bit (configured in the RCC_CFGR.
Stop 1 All clocks OFF
+ WFI or return EXTI registers). MSI with the except HSI16, LSI and ON
from ISR or WFE Specific frequency before LSE
Stop 2 peripherals entering the Stop
events mode when OFF
(with I2C3, LPMS = 0b010+
STOPWUCK = 0.
LPUART1, SLEEPDEEP bit
LPTIM1, + WFI or return
SRAM1, from ISR or WFE
SRAM2)
LPMS = 0b011+
Set RRS bit + Wakeup PVD,
Standby (with RFIRQ, wakeup
SLEEPDEEP bit OFF ON
SRAM2) RFBUSY, WKUP
+ WFI or return
from ISR or WFE pin edge, RTC
All clocks OFF
and TAMP event, MSI 4 MHz
LPMS = 0b011 + LSECSS, except LSI and LSE
Clear RRS bit + external reset in
Standby SLEEPDEEP bit NRST pin, OFF OFF
+ WFI or return IWDG reset
from ISR or WFE
WKUP pin edge,
LPMS = 0b1xx +
RTC and TAMP
SLEEPDEEP bit All clocks OFF
Shutdown event, external MSI 4 MHz OFF OFF
+ WFI or return except LSE
reset in NRST
from ISR or WFE
pin
1. Refer to Table 7: Functionalities depending on system operating mode.
32/145 DS13105 Rev 8

Relation between MCU and sub-GHz radio operating modes

The CPU and sub-GHz radio have their own operating modes (see the table below).
Table 9. MCU and sub-GHz radio operating modes

CPU operating mode Sub-GHz radio operating mode Description
Sleep, Calibration, Standby, Active LDO or SMPS regulator active, MCU running in
Run, Sleep
(FS, TX, RX)(1) main regulator (MR) mode
LDO and SMPS regulator off, MCU running in low
Deep-Sleep
power regulator (LPR) mode
LPRun, LPSleep
Sleep, Calibration, Standby, Active LDO or SMPS regulator active, MCU running in low
(FS, TX, RX) power regulator (LPR) mode
Sleep, Calibration, Standby, Active LDO or SMPS regulator active, MCU running in
Stop 0
(FS, TX, RX)(1) main regulator (MR) mode
LDO and SMPS regulator off, MCU using low power
Deep-Sleep
regulator (LPR) mode
Stop 1 and Stop 2
Sleep, Calibration, Standby, Active LDO or SMPS regulator active, MCU using low
(FS, TX, RX) power regulator (LPR) mode
LDO and SMPS regulator off, MCU regulator off or
Deep-Sleep
on in low power (LPR) mode(2).
Standby
Sleep, Calibration, Standby, Active LDO or SMPS regulator active, MCU regulator off or
(FS, TX, RX) on in low power (LPR) mode(2)
Shutdown Deep-Sleep(3) LDO and SMPS regulator off, MCU regulator off
1. In the MCU Run, Sleep and Stop 0 modes, the sub-GHz radio is prevented from entering Deep-sleep mode.
2. When retaining SRAM2 in Standby mode, the MCU uses the low-power regulator (LPR) mode.
3. When the CPU is in Shutdown mode, the sub-GHz radio cannot be activated and is forced in Deep-sleep mode.
3.10.1 Reset mode

In order to improve the consumption under reset, the I/Os state under and after reset is
"analog state" (the I/O Schmitt trigger is disabled). In addition, the internal reset pull-up is
deactivated when the reset source is internal.
This excludes the five serial-wire JTAG debug ports that are in pull-up/pull-down after reset.
3.11 Peripheral interconnect matrix

Several peripherals have direct connections between them. This allows autonomous
communication between peripherals, saving CPU resources and, consequently, reducing
power-supply consumption. In addition, these hardware connections allow fast and
predictable latency.
Depending on peripherals, these interconnections can operate in Run, Sleep, LPRun,
LPSleep, Stop 0, Stop 1 and Stop 2 modes.
DS13105 Rev 8 33/145

48
Table 10. Peripherals interconnect matrix(1) (2)

Destination
SUBGHZSPI
DMAMUX1
Source
LPTIM1
LPTIM2
LPTIM3
COMP1
COMP2
TIM16
TIM17
IRTIM
TIM1
TIM2
ADC
DAC
TIM1 - X - - - - - X X X X - - -
TIM2 X - - - - - - X X X X - - -
TIM16 - - - - - - - - - - - - X -
TIM17 X - - - - - - - - - - - X -
LPTIM1 - - - - - - X - X - - X - -
LPTIM2 - - - - - - X - X - - X - -
LPTIM3 - - - - - - - - - - - X - X
ADC X - - - - - - - - - - - -
Temperature
- - - - - - - X - - - - - -
sensor
VBAT(3) - - - - - - - X - - - - - -
VREFINT - - - - - - - X - - - - - -
HSE32 - - - X - - - - - - - - - -
LSE - X X - - - - - - - - - - -
MSI - - - X - - - - - - - - - -
LSI - - X - - - - - - - - - - -
MCO - - - X - - - - - - - - - -
GPIO EXTI - - - - - - - X X - - X - -
RTC - - X - X X - - - - - - - -
TAMP - - - - X X - - - - - - - -
COMP1 X X X X X X - - - - - - - -
COMP2 X X X X X X - - - - - - - -
SYST ERR X - X X - - - - - - - - - -
1. For more details, refer to section “Interconnection details” of the reference manual.
2. The “-” symbol in grayed cells means no interconnect.
3. VDD on STM32WLE5/4UxYx devices.
34/145 DS13105 Rev 8

3.12 Reset and clock controller (RCC)

The following different clock sources can be used to drive the system clock (SYSCLK):
• HSI16 (high-speed internal) 16 MHz RC oscillator clock
• MSI (multi-speed internal) RC oscillator clock from 100 kHz to 48 MHz
• HSE32 (high-speed external) 32 MHz oscillator clock, with trimming capacitors.
• PLL clock
The MSI is used as system clock source after startup from reset, configured at 4 MHz.
The devices have the following additional clock sources:
• LSI: 32 kHz low-speed internal RC that may drive the independent watchdog and
optionally the RTC used for auto-wakeup from Stop and Standby modes.
• LSE: 32.768 kHz low-speed external crystal that optionally drives the RTC used for
auto-wakeup from Stop, Standby and Shutdown modes, or the real-time clock
(RTCCLK).
Each clock source can be switched on or off independently when it is not used, to optimize
power consumption.
Several prescalers can be used to configure the AHB frequencies (HCLK3/PCLK3, HCLK1),
the high-speed APB2 (PCLK2) and the low-speed APB1 (PCLK1) domains. The maximum
frequency of the AHB (HCLK3, HCLK1), the PCLK1 and the PCLK2 domains is 48 MHz.
Most peripheral clocks are derived from their bus clock (HCLK, PCLK) except the following:
• The clock used for true RNG, is derived (selected by software) from one of the following
sources:
– PLL VCO (PLLQCLK) (only available in Run mode)
– MSI (only available in Run mode)
– LSI clock
– LSE clock
• The ADC clock is derived (selected by software) from one of the following sources:
– system clock (SYSCLK) (only available in Run mode)
– HSI16 clock (only available in Run mode)
– PLL VCO (PLLPCLK) (only available in Run mode)
• The DAC uses the LSI clock in sample and hold mode
• The (LP)U(S)ARTs clocks are derived (selected by software) from one of the following
sources:
– HSI16 clock (available in Run and Stop modes)
– LSE clock (available in Run and Stop modes)
– APB clock (PCLK depending on which APB the U(S)ART is mapped) (available in
CRun and CSleep when also enabled in (LP)U(S)ARTxSMEN)
The wakeup from Stop mode is supported only when the clock is HSI16 or LSE.
DS13105 Rev 8 35/145

48
• The I2Cs clocks are derived (selected by software) from one of the following sources:
– HSI16 clock (available in Run and Stop modes)
– APB clock (PCLK depending on which APB the I2C is mapped) (available in CRun
and CSleep when also enabled in I2CxSMEN.)
The wakeup from Stop mode is supported only when the clock is HSI16.
• The SPI2S2 I2S clock is derived (selected by software) from one of the following
sources:
– PLL VCO (PLLQCLK) (only available in Run mode)
– external input I2S_CK (available in Run and Stop modes)
• The low-power timers (LPTIMx) clock is derived (selected by software) from one of the
following sources:
– LSI clock (available in Run and Stop modes)
– LSE clock (available in Run and Stop modes)
– APB clock (PCLK depending on which APB the LPTIMx is mapped) (available in
Run and CStop when enabled in LPTIMxSMEN.)
– external clock mapped on LPTIMx_IN1 (available in Run and Stop modes)
The functionality in Stop mode (including wakeup) is supported only when the clock is
LSI or LSE, or in external clock mode.
• The RTC clock is derived (selected by software) from one of the following sources:
– LSE clock
– LSI clock
– HSE32 clock divided by 32
The functionality in Stop mode (including wakeup) is supported only when the clock is
LSI or LSE.
• The IWDG clock is always the LSI clock.
The RCC feeds the CPU system timer (SysTick) external clock with the AHB clock (HCLK1)
divided by eight. The SysTick can work either with this clock or directly with the CPU clock
(HCLK1), configurable in the SysTick control and status register.
FCLK1 acts as CPU free-running clock. For more details, refer to the programming manual
STM32 Cortex-M4 MCUs and MPUs programming manual (PM0214).
36/145 DS13105 Rev 8

Figure 8. Clock tree

to IWDG
LSI RCC 32 kHz
LSCO
LSI
OSC32_OUT LSE OSC
32.768 kHz LSE to RTC
OSC32_IN
LSE CSS
LSI
/32 CPU
LSE HPRE HCLK1 to CPU, AHB1, AHB2
HSE32 /1,2,...,512 to CPU FCLK
SYSCLK /8 to CPU system timer
MCO /1 - 16 PLLRCLK
APB1
PLLQCLK SYS clock PPRE1 PCLK1 to APB1
PLLPCLK source /1,2,4,8,16 x1 or to APB1 TIMx
control x2
HSI16
PLLRCLK APB2
MSI PPRE2 PCLK2 to APB2
OSC_OUT HSE32 OSC MSI /1,2,4,8,16 x1 or to APB2 TIMx
32 MHz SYSCLK x2
OSC_IN
HSE CSS HSE32 HSEPRE
/1,2
HSI16 RC
16 MHz HSI16
MSI RC
100 kHz - 48 MHz AHB3
SHDHPRE HCLK3 to AHB3, Flash, SRAM1, SRAM2
MSI
/1,2,...,512 PCLK3 to APB3
/M HSI16
to RF
PCLKn PCLKn
HSI16
SYSCLK HSI16
SYSCLK to ADC to USART1 to LPTIM1
PLL HSI16 to USART2 LSI to LPTIM2
x PLLPCLK to LPUART1 to LPTIM3
/P LSE LSE
N
/Q PLLQCLK LSI PCLKn

HSI16 to SPI2S2 LSE to RNG SYSCLK to I2C1
/R PLLRCLK to I2C2
I2S_CKIN MSI HSI16 to I2C3
LSI DAC MSv62605V2
1. For full details about the internal and external clock source characteristics, refer to the electrical characteristics section in
the device datasheet.
2. The ADC clock can additionally be derived from the AHB clock of the ADC bus interface, divided by a programmable factor
(1, 2 or 4). When the programmable factor is 1, the AHB prescaler must be equal to 1.
3.13 Hardware semaphore (HSEM)

The HSEM provides a 16- (32-bit) register based semaphores. The semaphores can be
used to ensure synchronization between different processes running on the core. The
HSEM provides a non blocking mechanism to lock semaphores in an atomic way. The
following functions are provided:
• Locking a semaphore can be done in two ways:
– 2-step lock: by writing COREID and PROCID to the semaphore, followed by a
read check
– 1-step lock: by reading the COREID from the semaphore
• Interrupt generation when a semaphore is unlocked: Each semaphore may generate
an interrupt on one of the interrupt lines.
• Semaphore clear protection: A semaphore is only unlocked when COREID and
PROCID match.
• Global semaphore clear per COREID
DS13105 Rev 8 37/145

48
3.14 General-purpose inputs/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions. Fast I/O toggling can be
achieved thanks to their mapping on the AHB2 bus.
The I/Os alternate function configuration can be locked if needed following a specific
sequence in order to avoid spurious writing to the I/Os registers.
3.15 Direct memory access controller (DMA)

The DMA (direct memory access) is used to provide high-speed data transfer between
peripherals and memory, as well as memory to memory. Data can be quickly moved by
DMA without any CPU actions. This keeps CPU resources free for other operations.
The DMA controller has 14 channels in total. A full cross matrix allows the peripherals, with
DMA support, to be mapped on any of the available DMA channels. Each DMA channel has
an arbiter for handling the priority between DMA requests.
The DMA main features are listed below:
• 14 independently configurable channels (requests)
• a full cross matrix between peripherals and all 14 channels and an hardware trigger
possibility through the DMAMUX1
• software programmable priorities between requests from channels of one DMA (four
levels: very-high, high, medium, low), plus hardware priorities management in case of
equality (example: request 1 has priority over request 2)
• independent source and destination transfer size (byte, half-word, word), emulating
packing and unpacking. Source/destination addresses must be aligned on the data
size.
• support for circular buffer management
• three event flags (DMA half-transfer, DMA transfer complete and DMA transfer error),
logically ORed together in a single interrupt request for each channel
• memory-to-memory transfer
• peripheral-to-memory, memory-to-peripheral, and peripheral-to-peripheral transfers
• access to Flash memory, SRAM, APB and AHB peripherals, as source and destination
• programmable number of data to be transferred (up to 65536)
Table 11. DMA1 and DMA2 implementation

Feature DMA1 DMA2
Number of channels 7 7
DMAMUX1 is used to route the peripherals with DMA source support, to any DMA channel.
38/145 DS13105 Rev 8

3.16 Interrupts and events
3.16.1 Nested vectored interrupt controller (NVIC)

The devices embed an NIVC able to manage 16 priority levels, and to handle up to
62 maskable interrupt channels plus the 16 interrupt lines of the Cortex-M4.
The NVIC benefits are the following:
• low-latency interrupt processing
• interrupt entry vector table address passed directly to the core
• early processing of interrupts
• processing of late-arriving higher-priority interrupts
• support for tail chaining
• processor state automatically saved
• interrupt entry restored on interrupt exit, with no instruction overhead
The NVIC hardware block provides flexible interrupt management features with minimal
interrupt latency.
3.16.2 Extended interrupt/event controller (EXTI)

The EXTI manages wakeup through configurable and direct event inputs. It provides wake-
up requests to the power control, and generates interrupt requests to the CPU NVIC and
events to the CPU event input.
Configurable events/interrupts come from peripherals that are able to generate a pulse and
allow the selection between the event/interrupt trigger edge and a software trigger.
Direct events/interrupts come from peripherals having their own clearing mechanism.
3.17 Cyclic redundancy check (CRC)

The CRC calculation unit is used to get a CRC code from 8-, 16- or 32-bit data word and a
generator polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the functional safety standards, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps to compute a signature
of he software during runtime, to be compared with a reference signature generated at link
time and stored at a given memory location.
3.18 Analog-to-digital converter (ADC)

A native 12-bit ADC is embedded into the devices. It can be extended to 16-bit resolution
through hardware oversampling. The ADC has up to 12 external channels and four internal
channels (temperature sensor, voltage reference, VBAT(a) monitoring, DAC output). The
ADC performs conversions in single-shot or scan mode. In scan mode, automatic
conversion is performed on a selected group of analog inputs.
a. VDD on STM32WLE5/E4UxYx devices.
DS13105 Rev 8 39/145

48
The ADC frequency is independent from the CPU frequency, allowing maximum sampling
rate of ~2 Msps even with a low CPU speed. An auto-shutdown function guarantees that the
ADC is powered off except during the active conversion phase.
The ADC can be served by the DMA controller. It can operate in the whole VDD supply
range.
The ADC features a hardware oversampler up to 256 samples, improving the resolution to
16 bits. Refer to the application note Improving STM32F1 Series, STM32F3 Series and
STM32Lx Series ADC resolution by oversampling (AN2668).
An analog watchdog feature allows very precise monitoring of the converted voltage of one,
some or all scanned channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
The events generated by the general-purpose timers (TIMx) can be internally connected to
the ADC start triggers, to allow the application to synchronize A/D conversions with timers.
3.18.1 Temperature sensor

The temperature sensor (TS) generates a VTS voltage that varies linearly with temperature.
The temperature sensor is internally connected to the ADC VIN[12] input channel, to
convert the sensor output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor may
vary from part to part due to process variation, the uncalibrated internal temperature sensor
is suitable only for relative temperature measurements.
To improve the accuracy of the temperature sensor, each part is individually factory-
calibrated by ST. The resulting calibration data is stored in the device engineering bytes,
accessible in read-only mode.
Table 12. Temperature sensor calibration values

Calibration value
Description Memory address
name
TS ADC raw data acquired at 30 °C (± 5 °C),

TS_CAL1 0x1FFF 75A8 - 0x1FFF 75A9
VDDA = VREF+ = 3.3 V (± 10 mV)
TS ADC raw data acquired at 130 °C (± 5 °C),
TS_CAL2 0x1FFF 75C8 - 0x1FFF 75C9
VDDA = VREF+ = 3.3 V (± 10 mV)
3.18.2 Internal voltage reference (VREFINT)

VREFINT provides a stable (bandgap) voltage output for the ADC and comparators. VREFINT
is internally connected to the ADC VIN[13] input channel.
VREFINT is individually and precisely measured, for each part, by ST, during production test
and stored in the device engineering bytes. It is accessible in read-only mode.
40/145 DS13105 Rev 8

Table 13. Internal voltage reference calibration values

Calibration value name Description Memory address
Raw data acquired at 30 °C (± 5 °C),

VREFINT_CAL 0x1FFF 75AA - 0x1FFF 75AB
VDDA = VREF+ = 3.3 V (± 10 mV)
3.18.3 VBAT battery voltage monitoring

This embedded hardware feature allows the application to measure the VBAT(a) battery
voltage using the ADC VIN[14] input channel. As VBAT may be higher than VDDA, and thus
outside the ADC input range, the VBAT pin is internally connected to a bridge divider by
three. As a consequence, the converted digital value is one third the VBAT voltage.
3.19 Digital-to-analog converter (DAC)

The 1-channel 12-bit buffered DAC converts a digital value into an analog voltage available
on the channel output. The architecture of each channel is based on an integrated resistor
string and an inverting amplifier. The digital circuitry is common for both channels.
DAC main features:
• 1 DAC output channel
• 8-bit or 12-bit output mode
• buffer offset calibration (factory and user trimming)
• left or right data alignment in 12-bit mode
• synchronized update capability
• noise-wave generation
• triangular-wave generation
• independent or simultaneous conversion for DAC channels
• DMA capability for either DAC channel
• triggering with timer events, synchronized with DMA
• triggering with external events
Sample-and-hold low-power mode, with internal or external capacitor
3.20 Voltage reference buffer (VREFBUF)

The devices embed a voltage reference buffer that can be used as voltage reference for
ADC, and also as voltage reference for external components through the VREF+ pin.
VREFBUF supports two voltages: 2.048 V and 2.5 V.
An external voltage reference can be provided through the VREF+ pin when VREFBUF
is off.
a. VDD on STM32WLE5/E4UxYx devices.
DS13105 Rev 8 41/145

48
3.21 Comparator (COMP)

The devices embed two rail-to-rail comparators with programmable reference voltage
(internal or external), hysteresis and speed (low speed for low-power) and with selectable
output polarity.
The reference voltage can be one of the following:
• external I/O
• internal reference voltage or submultiple (1/4, 1/2, 3/4)
All comparators can wake up from Stop mode, generate interrupts and breaks for the timers,
and can be also combined into a window comparator.
3.22 True random number generator (RNG)

The devices embed a true RNG that delivers 32-bit random numbers generated by an
integrated analog circuitry.
3.23 Advanced encryption standard hardware accelerator (AES)

The AES encrypts or decrypts data, using an algorithm and implementation fully compliant
with the advanced encryption standard (AES) defined in FIPS (federal information
processing standards) publication 197.
Multiple chaining modes are supported (ECB, CBC, CTR, GCM, GMAC, CCM), for key
sizes of 128 or 256 bits. The AES supports DMA single transfers for incoming and outgoing
data (two DMA channels required).
3.24 Public key accelerator (PKA)

The PKA is used to compute cryptographic public key primitives, specifically those related to
RSA (Rivest, Shamir and Adleman), Diffie-Hellmann or ECC (elliptic curve cryptography)
over GF(p) (Galois fields). These operations are executed in the Montgomery domain.
3.25 Timer and watchdog

The devices include one advanced 16-bit timer, one general-purpose 32-bit timer, two 16-bit
basic timers, three low-power timers, two watchdog timers and a SysTick timer.
The table below compares the features of the advanced control, general purpose and basic
timers.
42/145 DS13105 Rev 8

Table 14. Timer features

Counter DMA Capture/
Timer Counter Prescaler Complementary
Timer type resolution request compare
name type factor outputs
(bits) generation channels
Advanced Up, down

TIM1 16 3
control and 4
TIM2 32 up/down NA
General Any integer
TIM16
purpose between Yes 2
TIM17 1 and 65536
LPTIM1 16 Up 1
Low power LPTIM2 1
LPTIM3
3.25.1 Advanced-control timer (TIM1)

The advanced-control timer TIM1 can be seen as a three-phase PWM multiplexed on six
channels. Each channel has complementary PWM outputs with programmable inserted
dead-times. Each channel can also be seen as complete general-purpose timers.
The four independent channels can be used for:
• input capture
• output compare
• PWM generation (edge or center-aligned modes) with full modulation capability
(0 - 100 %)
• one-pulse mode output
In debug mode, the TIM1 counter can be frozen and the PWM outputs disabled to turn off
any power switches driven by these outputs.
Many features are shared with those of the general-purpose timers (described in the next
section) using the same architecture. TIM1 can then work together with TIM2 via the
peripheral interconnect matrix, for synchronization or event chaining.
3.25.2 General-purpose timers (TIM2, TIM16, TIM17)

Each general-purpose timer can be used to generate PWM outputs, or act as a simple time
base.
TIM2 main features:
• full-featured general-purpose timer
• four independent channels for input capture/output compare, PWM or one-pulse mode
output
• counter that can be frozen in debug mode
• independent DMA request generation, support of quadrature encoders
DS13105 Rev 8 43/145

48
TIM16 and TIM17 main features:

• general-purpose timers with mid-range features
• 16-bit auto-reload upcounters and 16-bit prescalers
• 1 channel and 1 complementary channel
• channels that can all be used for input capture/output compare, PWM or one-pulse
mode output
• counter that can be frozen in debug mode
• independent DMA request generation
3.25.3 Low-power timers (LPTIM1, LPTIM2 and LPTIM3)

These low-power timers have an independent clock and run in Stop mode if they are
clocked by LSE, LSI, or by an external clock. They are able to wake up the system from
Stop mode.
LPTIM1 is active in Stop 0, Stop 1 and Stop 2 modes.
LPTIM2 and LPTIM3 are active in Stop 0 and Stop 1 modes.
LPTIM1/2/3 main features:
• 16-bit up counter with 16-bit autoreload register
• 16-bit compare register
• configurable output: pulse, PWM
• continuous/one-shot mode
• selectable software/hardware input trigger
• selectable clock source
• internal clock sources: LSE, either LSI, HSI16 or APB clock
• external clock source over LPTIM input (works even with no internal clock source
running, used by pulse counter application)
• programmable digital glitch filter
• encoder mode (LPTIM1 only)
3.25.4 Independent watchdog (IWDG)

The independent watchdog is based on a 12-bit downcounter and a 8-bit prescaler. The
IWDG is clocked from an independent 32 kHz internal RC (LSI). As the IWDG operates
independently from the main clock, it can operate in Stop and Standby modes.
The IWDG can be used either as a watchdog to reset the device when a problem occurs, or
as a free running timer for application timeout management. The IWDG is hardware or
software configurable through the option bytes. The counter can be frozen in debug mode.
3.25.5 System window watchdog (WWDG)

The window watchdog is based on a 7-bit downcounter that can be set as free running. The
WWDG can be used as a watchdog to reset the device when a problem occurs.
The WWDG is clocked from the main clock and has an early warning interrupt capability.
The counter can be frozen in debug mode.
44/145 DS13105 Rev 8

3.25.6 SysTick timer

This timer is dedicated to real-time operating systems, but can also be used as a standard
down counter.
SysTick timer main features:
• 24-bit down counter
• autoreload capability
• maskable system interrupt generation when the counter reaches 0
• programmable clock source
3.26 Real-time clock (RTC), tamper and backup registers

The RTC is an independent BCD timer/counter. The RTC provides a time-of-day
clock/calendar with programmable alarm interrupts.
As long as the supply voltage remains in the operating range, the RTC never stops,
regardless of the device status (Run mode, low-power mode or under reset).
The RTC provides an automatic wakeup to manage all low-power modes.
The RTC is functional in VBAT mode.
Twenty 32-bit backup registers are retained in all low-power modes and also in VBAT mode.
These registers can be used to store sensitive data as their content is protected by a tamper
detection circuit.
Three tamper pins and four internal tampers are available for anti-tamper detection. The
external tamper pins can be configured for edge or level detection with or without filtering.
3.27 Inter-integrated circuit interface (I2C)

The device embeds three I2Cs, with features implementation listed in the he table below.
The I2C bus interface handles communications between the microcontroller and the serial
I2C bus. It controls all I2C bus-specific sequencing, protocol, arbitration and timing.
The I2C peripheral supports:
• I2C bus specification and user manual rev. 5 compatibility:
– slave and master modes, multimaster capability
– Standard-mode (Sm), with a bitrate up to 100 Kbit/s
– Fast-mode (Fm), with a bitrate up to 400 Kbit/s
– Fast-mode plus (Fm+), with a bitrate up to 1 Mbit/s and 20 mA output drive I/Os
– 7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
– programmable setup and hold times
– clock stretching (optional)
• SMBus (system management bus) specification rev 2.0 compatibility:
– hardware PEC (packet error checking) generation and verification with ACK
control
– address resolution protocol (ARP) support
– SMBus alert
DS13105 Rev 8 45/145

48
• PMBus (power system management protocol) specification rev 1.1 compatibility

• independent clock: a choice of independent clock sources allowing the I2C
communication speed to be independent from the PCLK reprogramming (see Figure 8)
• wakeup from Stop mode on address match
• programmable analog and digital noise filters
• 1-byte buffer with DMA capability
Table 15. I2C implementation

I2C features(1) I2C1(2) I2C2(2) I2C3
7-bit addressing mode X X X

10-bit addressing mode X X X
Standard-mode (up to 100 Kbit/s) X X X
Fast-mode (up to 400 Kbit/s) X X X
Fast-mode Plus with 20mA output drive I/Os (up to 1 Mbit/s) X X X
Independent clock X X X
(3) (3)
Wakeup from Stop mode X X X(4)
SMBus/PMBus X X X
1. X = supported.
2. The register content is lost in Stop 2 mode.
3. Wakeup supported from Stop 0 and Stop 1 modes.
4. Wakeup supported from Stop 0, Stop 1 and Stop 2 modes.
3.28 Universal synchronous/asynchronous receiver transmitter

(USART/UART)
The devices embed two universal synchronous receiver transmitters, USART1 and
USART2 (see Table 16 for the implementation details).
Each USART provides asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire half-duplex communication mode. Each
USART has LIN Master/Slave capability and provides hardware management of the CTS
and RTS signals, and RS485 driver enable.
The USART is able to communicate at speeds of up to 4 Mbit/s, and also provides
Smart Card mode (ISO 7816 compliant) and SPI-like communication capability.
The USART supports synchronous operation (SPI mode), and can be used as an SPI
master.
The USART has a clock domain independent from the CPU clock, allowing the USART to
wake up the MCU from Stop mode, using baudrates up to 200 kbaud.
The wakeup events from Stop mode are programmable and can be one of the following:
• start bit detection
• any received data frame
• a specific programmed data frame
46/145 DS13105 Rev 8

The USART interface can be served by the DMA controller.
3.29 Low-power universal asynchronous receiver transmitter

(LPUART)
The devices embed one low-power UART (LPUART1) that enables asynchronous serial
communication with minimum power consumption. The LPUART supports half-duplex
single-wire communication and modem operations (CTS/RTS), allowing multiprocessor
communication.
The LPUART has a clock domain independent from the CPU clock, and can wake up the
system from Stop mode using baudrates up to 220 Kbaud. The wakeup events from Stop
mode are programmable and can be one of the following:
• start bit detection
• any received data frame
• a specific programmed data frame
Only a 32.768 kHz clock (LSE) is needed to allow LPUART communication up to
9600 baud. Therefore, even in Stop mode, the LPUART can wait for an incoming frame
while having an extremely low-energy consumption. Higher speed clock can be used to
reach higher baudrates.
The LPUART interface can be served by the DMA controller.
Table 16. USART/LPUART features

USART modes/features(1) USART1/2 LPUART1
Hardware flow control for modem X X

Continuous communication using DMA X X
Multiprocessor communication X X
Synchronous mode (Master/Slave) X -
Smartcard mode X -
Single-wire half-duplex communication X X
IrDA SIR ENDEC block X -
LIN mode X -
Dual clock domain and wakeup from low-power mode X X
Receiver timeout interrupt X -
Modbus communication X -
Auto baud rate detection X -
Driver enable X X
USART data length 7, 8 and 9 bits
Tx/Rx FIFO X X
Tx/Rx FIFO size 8
1. X = supported.
DS13105 Rev 8 47/145

48
3.30 Serial peripheral interface (SPI)/integrated-interchip sound

interface (I2S)
The SPI/I2S interface can be used to communicate with external devices using the SPI
protocol or the I2S audio protocol. SPI or I2S mode is selectable by software. SPI Motorola®
mode is selected by default after a device reset.
The SPI protocol supports half-duplex, full-duplex and simplex synchronous, serial
communication with external devices. The SPI interface can be configured as master and, in
this case, it provides the communication clock (SCK) to the external slave device. The SPI
interface can also operate in multimaster configuration.
The I2S protocol is also a synchronous serial communication interface. It can operate in
slave or master mode with half-duplex communication. It can address four different audio
standards including the Philips I2S standard, the MSB- and LSB-justified standards and the
PCM standard.
Table 17. SPI and SPI/I2S implementation(1)

Features SPI1 SPI2S2 SUBGHZSPI
Enhanced NSSP and TI modes Yes

Hardware CRC calculation Yes Yes No
I2S support No Yes No
Data size configurable (bits) from 4 to 16
Rx/Tx FIFO size (bits) 32
Wakeup capability from LPSleep Yes
1. The SPI1 and SPI2S2 instances are general purpose type while the SUBGHZSPI instance is dedicated for
Sub-GHz radio control exclusively. Radio is controlled internally through SUBGHZSPI and, for debug
purpose only, from the external.
3.31 Development support

Serial-wire JTAG debug port (SWJ-DP)
The Arm SWJ-DP interface is embedded, and is a combined JTAG and serial-wire debug
port, that enables either a serial-wire debug or a JTAG probe to be connected to the target.
The debug is performed using only two pins instead of the five required by the JTAG (JTAG
pins can then be reused as GPIOs with alternate function). The JTAG TMS and TCK pins
are shared with SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin
is used to switch between JTAG-DP and SW-DP.
48/145 DS13105 Rev 8

STM32WLE5/E4xx Pinouts, pin description and alternate functions
4 Pinouts, pin description and alternate functions
Figure 9. UFQFPN48 pinout
PC15-OSC32_OUT
PC14-OSC32_IN
VDDSMPS
VSSSMPS
VFBSMPS
VLXSMPS
VDDA
VBAT
PC13
PA15
PA14
VDD
48
47
46
45
44
43
42
41
40
39
38
37
PB3 1 36 PA13
PB4 2 35 PA12
PB5 3 34 PA11
PB6 4 33 PA10
PB7 5 32 PB12
PB8 6 31 PB2
PA0 7
UFQFPN48 30 PB0-VDD_TCXO
PA1 8 29 VDDRF1V55
PA2 9 28 VDDRF
PA3 10 27 OSC_OUT
VDD 11 26 OSC_IN
PA4 12 25 VDDPA
13
14
15
16
17
18
19
20
21
22
23
24
NRST
RFI_P
RFI_N
RFO_LP
RFO_HP
PA5
PA6
PA7
PA8
PA9
VR_PA
PH3-BOOT0
MSv48144V4
1. The above figure shows the package top view.

2. The exposed pad must be connected to the ground plain.
DS13105 Rev 8 49/145

60
Pinouts, pin description and alternate functions STM32WLE5/E4xx
Figure 10. UFBGA73 pinout
1 2 3 4 5 6 7 8 9
A VSSSMPS VDDSMPS PA14 VDDA VDD VBAT PA12
PC14-
B VLXSMPS VFBSMPS PA15 PB15 VREF+
OSC32_IN
VSS PA13 PA11
PC15-
C PB3 PB4 PB7 PB9 OSC32 PB14 PC13 PA10
_OUT
D PB5 PB8 PC2 PC3 PA0 PB13 PB2 VSS
E PB6 VDD VSS PC5 PA9 PB12 PB1 VDDRF VDD
PB0- VDDRF
F PC1 PC0 PC4 PA6 NRST
VDD_TCXO 1V55
OSC_OUT
G PC6 PA1 PB11 VSS VSSRF VSSRF VSSRF OSC_IN
H PA3 PA2 PA7 PB10 VDD VSSRF RFI_N VDDPA VR_PA
PH3-
J PA4 PA5 PA8
BOOT0
RFI_P RFO_LP RFO_HP
MSv48145V4
1. The above figure shows the package top view.
Table 18. Legend/abbreviations used in the pinout table

Name Abbreviation Definition
Unless otherwise specified in brackets below the pin name, the pin function during and
Pin name
after reset is the same as the actual pin name
S Supply pin
I Input only pin
Pin type
I/O Input / output pin
O Output only pin
FT 5 V tolerant I/O
RF Radio RF pin
TT 3 V tolerant I/O
I/O structure
Option for FT I/Os
_f I/O, Fm+ capable

_a I/O, with Analog switch function supplied by VDDA
50/145 DS13105 Rev 8

Table 18. Legend/abbreviations used in the pinout table (continued)

Name Abbreviation Definition
Unless otherwise specified by a note, all I/Os are set as analog inputs during and after
Notes
reset.
Alternate
Functions selected through GPIOx_AFR registers
Pin functions
functions Additional
Functions directly selected/enabled through peripheral registers
functions
Table 19. STM32WLE5/E4xx pin definition

Pin number
I/O structure
Pin type
Pin name
UFQFPN48
Notes
WLCSP59
UFBGA73
(function after Alternate functions Additional functions

reset)
- E10 - VSS S - - - -
JTDO/TRACESWO,
COMP1_INM,
TIM2_CH2, SPI1_SCK,
COMP2_INM,
1 D11 C1 PB3 I/O FT_a - RF_IRQ0, USART1_RTS,
ADC_IN2,
DEBUG_RF_DTB1,
TAMP_IN3/WKUP3
CM4_EVENTOUT
NJTRST, I2C3_SDA,
SPI1_MISO, USART1_CTS, COMP1_INP,
2 D9 C2 PB4 I/O FT_fa - DEBUG_RF_LDORDY, COMP2_INP,
TIM17_BKIN, ADC_IN3
CM4_EVENTOUT
LPTIM1_IN1, I2C1_SMBA,
SPI1_MOSI, RF_IRQ1,
3 - D2 PB5 I/O FT_a - USART1_CK, COMP2_OUT, -
TIM16_BKIN,
CM4_EVENTOUT
- F7 E3 VSS S - - - -
- F11 E2 VDD S - - - -
LPTIM1_ETR, I2C1_SCL,
4 - E1 PB6 I/O FT_f - USART1_TX, TIM16_CH1N, -
CM4_EVENTOUT
LPTIM1_IN2, TIM1_BKIN,
I2C1_SDA, USART1_RX,
5 - C3 PB7 I/O FT_f - -
TIM17_CH1N,
CM4_EVENTOUT
TIM1_CH2N, I2C1_SCL,
6 - D3 PB8 I/O FT_f - RF_IRQ2, TIM16_CH1, -
CM4_EVENTOUT
DS13105 Rev 8 51/145

60
Table 19. STM32WLE5/E4xx pin definition (continued)

Pin number
I/O structure
Pin type
Pin name
UFQFPN48
Notes
WLCSP59
UFBGA73
reset)
TIM1_CH3N, I2C1_SDA,
SPI2_NSS/I2S2_WS,
- - C4 PB9 I/O FT_f - -
IR_OUT, TIM17_CH1,
CM4_EVENTOUT
LPTIM1_IN1, I2C3_SCL,
- - F2 PC0 I/O FT_f - LPUART1_RX, LPTIM2_IN1, -
CM4_EVENTOUT
LPTIM1_OUT,
SPI2_MOSI/I2S2_SD,
- - F1 PC1 I/O FT_f - -
I2C3_SDA, LPUART1_TX,
CM4_EVENTOUT
LPTIM1_IN2, SPI2_MISO,
- - D4 PC2 I/O FT - -
CM4_EVENTOUT
LPTIM1_ETR,
SPI2_MOSI/I2S2_SD,
- - D5 PC3 I/O FT - -
LPTIM2_ETR,
CM4_EVENTOUT
- - F3 PC4 I/O FT - CM4_EVENTOUT -
- - E4 PC5 I/O FT - CM4_EVENTOUT -
- - G2 PC6 I/O FT - I2S2_MCK, CM4_EVENTOUT -
TIM2_CH1, I2C3_SMBA,
I2S_CKIN, USART2_CTS,
7 H11 D6 PA0 I/O FT_a - COMP1_OUT, TAMP_IN2/WKUP1
DEBUG_PWR_REGLP1S,
TIM2_ETR, CM4_EVENTOUT
TIM2_CH2, LPTIM3_OUT,
I2C1_SMBA, SPI1_SCK,
USART2_RTS,
8 G10 G3 PA1 I/O FT_a - -
LPUART1_RTS,
DEBUG_PWR_REGLP2S,
CM4_EVENTOUT
LSCO, TIM2_CH3,
USART2_TX, LPUART1_TX,
9 F9 H2 PA2 I/O FT_a - COMP2_OUT, LSCO
DEBUG_PWR_LDORDY,
CM4_EVENTOUT
TIM2_CH4, I2S2_MCK,
10 C8 H1 PA3 I/O FT_a - USART2_RX, LPUART1_RX, -
CM4_EVENTOUT
- E6 G5 VSS S - - - -
52/145 DS13105 Rev 8


Pin number
I/O structure
Pin type
Pin name
UFQFPN48
Notes
WLCSP59
UFBGA73
reset)
11 K11 H5 VDD S - - - -
RTC_OUT2, LPTIM1_OUT,
SPI1_NSS, USART2_CK,
12 J10 J1 PA4 I/O FT - DEBUG_SUBGHZSPI_ -
NSSOUT, LPTIM2_OUT,
CM4_EVENTOUT
TIM2_CH1, TIM2_ETR,
SPI2_MISO, SPI1_SCK,
13 H9 J2 PA5 I/O FT - DEBUG_SUBGHZSPI_ -
SCKOUT, LPTIM2_ETR,
CM4_EVENTOUT
TIM1_BKIN, I2C2_SMBA,
SPI1_MISO, LPUART1_CTS,
14 G8 F4 PA6 I/O FT - DEBUG_SUBGHZSPI_ -
MISOOUT, TIM16_CH1,
CM4_EVENTOUT
SPI1_MOSI, COMP2_OUT,
15 E8 H3 PA7 I/O FT_fa - DEBUG_SUBGHZSPI_ -
MOSIOUT, TIM17_CH1,
CM4_EVENTOUT
MCO, TIM1_CH1,
SPI2_SCK/I2S2_CK,
16 L10 J3 PA8 I/O FT_a - -
USART1_CK, LPTIM2_OUT,
CM4_EVENTOUT
TIM1_CH2,
SPI2_NSS/I2S2_WS,
I2C1_SCL,
17 K9 E5 PA9 I/O FT_fa - -
SPI2_SCK/I2S2_CK,
USART1_TX,
CM4_EVENTOUT
TIM2_CH3, I2C3_SCL,
SPI2_SCK/I2S2_CK,
- - H4 PB10 I/O FT_f - -
LPUART1_RX, COMP1_OUT,
CM4_EVENTOUT
TIM2_CH4, I2C3_SDA,
- - G4 PB11 I/O FT_f - LPUART1_TX, COMP2_OUT, -
CM4_EVENTOUT
18 J8 F5 NRST I/O FT - - -
19 H7 J5 PH3-BOOT0 I/O FT - CM4_EVENTOUT BOOT0
- L8 - VDD S - - - -
DS13105 Rev 8 53/145

60

Pin number
I/O structure
Pin type
Pin name
UFQFPN48
Notes
WLCSP59
UFBGA73
reset)
- K7 - VSS S - - - -
- J6 H6 VSSRF S - - - -
- H5 G6 VSSRF S - - - -
20 L6 J6 RFI_P I RF - - -
21 K5 H7 RFI_N I RF - - -
- G4 G7 VSSRF S - - - -
- J4 - VSSRF S - - - -
22 L4 J8 RFO_LP O RF - - -
- - G8 VSSRF S - - - -
23 K3 J9 RFO_HP O RF - - -
- H3 - VSSRF S - - - -
24 L2 H9 VR_PA S - - - -
25 H1 H8 VDDPA S - - - -
- K1 - VSSRF S - - - -
26 G2 G9 OSC_IN I RF - - -
27 F1 F8 OSC_OUT O RF - - -
- F3 - VSSRF S - - - -
28 E2 E8 VDDRF S - - - -
29 D1 F7 VDDRF1V55 S - - - -
- F5 D9 VSS S - - - -
- - E9 VDD S - - - -
COMP1_OUT,
30 B1 F6 PB0-VDD_TCXO I/O TT - -
CM4_EVENTOUT
LPUART1_RTS_DE,
COMP2_INP,
- - E7 PB1 I/O FT_a - LPTIM2_IN1,
ADC_IN5
CM4_EVENTOUT
LPTIM1_OUT, I2C3_SMBA,
COMP1_INP,
SPI1_NSS,
31 - D8 PB2 I/O FT_a - COMP2_INM,
DEBUG_RF_SMPSRDY,
ADC_IN4
CM4_EVENTOUT
TIM1_BKIN, I2C3_SMBA,
SPI2_NSS/I2S2_WS,
32 - E6 PB12 I/O FT - -
LPUART1_RTS,
CM4_EVENTOUT
54/145 DS13105 Rev 8


Pin number
I/O structure
Pin type
Pin name
UFQFPN48
Notes
WLCSP59
UFBGA73
reset)
SPI2_SCK/I2S2_CK,
- - D7 PB13 I/O FT_fa - ADC_IN0
LPUART1_CTS,
CM4_EVENTOUT
TIM1_CH2N, I2S2_MCK,
- - C6 PB14 I/O FT_fa - I2C3_SDA, SPI2_MISO, ADC_IN1
CM4_EVENTOUT
RTC_REFIN, TIM1_CH3,
I2C1_SDA,
COMP1_INM,
SPI2_MOSI/I2S2_SD,
COMP2_INM,
33 D3 C8 PA10 I/O FT_fa - USART1_RX,
DAC_OUT1,
DEBUG_RF_HSE32RDY,
ADC_IN6
TIM17_BKIN,
CM4_EVENTOUT
TIM1_CH4, TIM1_BKIN2,
LPTIM3_ETR, I2C2_SDA, COMP1_INM,
34 E4 B9 PA11 I/O FT_fa - SPI1_MISO, USART1_CTS, COMP2_INM,
DEBUG_RF_NRESET, ADC_IN7
CM4_EVENTOUT
TIM1_ETR, LPTIM3_IN1,
I2C2_SCL, SPI1_MOSI,
35 D5 A9 PA12 I/O FT_fa - ADC_IN8
RF_BUSY, USART1_RTS,
CM4_EVENTOUT
JTMS-SWDIO, I2C2_SMBA,
36 D7 B8 PA13 I/O FT_a - ADC_IN9
IR_OUT, CM4_EVENTOUT
- C2 B7 VSS S - - - -
- A2 A7 VDD S - - - -
37 - A8 VBAT S - - - -
TAMP_IN1/
38 - C7 PC13 I/O FT - CM4_EVENTOUT RTC_OUT1/RTC_TS/
WKUP2
39 B3 B6 PC14-OSC32_IN I/O FT - CM4_EVENTOUT OSC32_IN
PC15-
40 A4 C5 I/O FT - CM4_EVENTOUT OSC32_OUT
OSC32_OUT
- - B5 VREF+ S - - - -
41 B5 A5 VDDA S - - - -
- C4 - VSS S - - - -
DS13105 Rev 8 55/145

60

Pin number
I/O structure
Pin type
Pin name
UFQFPN48
Notes
WLCSP59
UFBGA73
reset)
JTCK-SWCLK, LPTIM1_OUT,
42 C6 A4 PA14 I/O FT_a - I2C1_SMBA, ADC_IN10
CM4_EVENTOUT
JTDI, TIM2_CH1, TIM2_ETR, COMP1_INM,
43 A8 B3 PA15 I/O FT_fa - I2C2_SDA, SPI1_NSS, COMP2_INP,
CM4_EVENTOUT ADC_IN11
- - B4 PB15 I/O FT_f SPI2_MOSI/I2S2_SD, -
CM4_EVENTOUT
44 A6 - VDD S - - - -
- B7 - VSS S - - - -
49(1) G6 - VSS S - - - -
45 B9 B2 VFBSMPS S - - - -
46 A10 A2 VDDSMPS S - - - -
47 B11 B1 VLXSMPS S - - - -
48 C10 A1 VSSSMPS S - - - -
1. Pin 49 is an exposed pad that must be connected to VSS.
56/145 DS13105 Rev 8

STM32WLE5/E4xx
Table 20. Alternate functions
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15
TIM2/
Port TIM1/ SPI2S2/ I2C1/ USART1 COMP1/
SYS_ TIM1/ SPI1/ TIM16/
TIM2/ TIM1/ I2C2/ RF / LPUART1 - - - COMP2/ DEBUG EVENOUT
AF TIM2 SPI2S2 TIM17/
LPTIM1 LPTIM3 I2C3 USART2 TIM1
LPTIM2
TIM2_ I2C3_ I2S_ USART2_ COMP1_ DEBUG_PWR CM4_

PA0 -
CH1
- -
SMBA CKIN
-
CTS
- - - -
OUT _REGLP1S
TIM2_ETR
EVENTOUT
TIM2_ LPTIM3_ I2C1_ SPI1_ USART2_ LPUART1_ DEBUG_PWR CM4_

PA1 -
CH2
-
OUT SMBA SCK
-
RTS RTS
- - - -
_REGLP2S
-
EVENTOUT
TIM2_ USART2_ LPUART1_ COMP2_ DEBUG_PWR CM4_

PA2 LSCO
CH3
- - - - -
TX TX
- - -
OUT _LDORDY
-
EVENTOUT
TIM2_ I2S2_ USART2_ LPUART1_ CM4_

PA3 -
CH4
- - -
MCK
-
RX RX
- - - - - -
EVENTOUT
DEBUG_
RTC_ LPTIM1 SPI1_ USART2_ LPTIM2_ CM4_
PA4 OUT2 _OUT
- - -
NSS
-
CK
- - - - - SUBGHZSPI_
OUT EVENTOUT
DS13105 Rev 8
NSSOUT
DEBUG_
TIM2_ TIM2_ SPI2_ SPI1_ LPTIM2_ CM4_
PA5 -
CH1 ETR MISO
-
SCK
- - - - - - - SUBGHZSPI_
ETR EVENTOUT
SCKOUT
Pinouts, pin description and alternate functions

Port A
DEBUG_
TIM1_ I2C2_ SPI1_ LPUART1_ TIM1_ TIM16_ CM4_
PA6 -
BKIN
- -
SMBA MISO
- -
CTS
- - -
BKIN
SUBGHZSPI_
CH1 EVENTOUT
MISOOUT
DEBUG_
TIM1_ I2C3_ SPI1_ COMP2_ TIM17_ CM4_
PA7 -
CH1N
- -
SCL MOSI
- - - - - -
OUT
SUBGHZSPI_
CH1 EVENTOUT
MOSIOUT
SPI2_
TIM1_ USART1_ LPTIM2_ CM4_
PA8 MCO
CH1
- - - SCK/ -
CK
- - - - - -
OUT EVENTOUT
I2S2_CK
SPI2_ SPI2_
TIM1_ I2C1_ USART1_ CM4_
PA9 -
CH2
- NSS/
SCL
SCK/ -
TX
- - - - - - -
EVENTOUT
I2S2_WS I2S2_CK
SPI2_
RTC_ TIM1_ I2C1_ USART1_ DEBUG_RF_ TIM17_ CM4_
PA10 REFIN CH3
- -
SDA
MOSI/ -
RX
- - - - -
HSE32RDY BKIN EVENTOUT
I2S2_SD
TIM1_ TIM1_ LPTIM3_ I2C2_ SPI1_ USART1_ TIM1_ DEBUG_RF_ CM4_

PA11 -
CH4 BKIN2 ETR SDA MISO
-
CTS
- - - -
BKIN2 NRESET
-
EVENTOUT
57/145
Table 20. Alternate functions (continued)
58/145

TIM2/
LPTIM2
TIM1_ LPTIM3_ I2C2_ SPI1_ USART1_ CM4_

PA12 -
ETR
-
IN1 SCL MOSI
RF_BUSY
RTS
- - - - - - -
EVENTOUT
Port A (continued)
JTMS- I2C2_ CM4_

PA13 SWDIO
- - -
SMBA
- - - IR_OUT - - - - - -
EVENTOUT
JTCK- LPTIM1_ I2C1_ CM4_

PA14 SWCLK OUT
- -
SMBA
- - - - - - - - - -
EVENTOUT
TIM2_ TIM2_ I2C2_ SPI1_ CM4_

PA15 JTDI
CH1 ETR
-
SDA NSS
- - - - - - - - -
EVENTOUT
COMP1_ CM4_
PB0 - - - - - - - - - - - -
OUT
- -
EVENTOUT
DS13105 Rev 8
LPUART1_ LPTIM2_ CM4_

PB1 - - - - - - - -
RTS_DE
- - - - -
IN1 EVENTOUT
LPTIM1_ I2C3_ SPI1_ DEBUG_RF_ CM4_

PB2 -
OUT
- -
SMBA NSS
- - - - - - -
SMPSRDY
-
EVENTOUT
JTDO/
TIM2_ SPI1_ USART1_ DEBUG_RF_ CM4_
PB3 TRACE
CH2
- - -
SCK
RF_IRQ0
RTS
- - - - -
DTB1
-
EVENTOUT
SWO
I2C3_ SPI1_ USART1_ DEBUG_RF_ TIM17_ CM4_

PB4 NJTRST - - -
SDA MISO
-
CTS
- - - - -
LDORDY BKIN EVENTOUT
LPTIM1_ I2C1_ SPI1_ USART1_ COMP2_ TIM16_ CM4_

Port B
PB5 -
IN1
- -
SMBA MOSI
RF_IRQ1
CK
- - - -
OUT
-
BKIN EVENTOUT
LPTIM1_ I2C1_ USART1_ TIM16_ CM4_

PB6 -
ETR
- -
SCL
- -
TX
- - - - - -
CH1N EVENTOUT
LPTIM1_ TIM1_ I2C1_ USART1_ TIM17_ CM4_

PB7 -
IN2
-
BKIN SDA
- -
RX
- - - - - -
CH1N EVENTOUT
TIM1_ I2C1_ TIM16_ CM4_

PB8 - - - - RF_IRQ2 - - - - - - -
STM32WLE5/E4xx
CH2N SCL CH1 EVENTOUT
SPI2_
TIM1_ I2C1_ TIM17_ CM4_
PB9 -
CH3N
- -
SDA
NSS/ - - IR_OUT - - - - -
CH1 EVENTOUT
I2S2_WS
SPI2_
TIM2_ I2C3_ LPUART1_ COMP1_ CM4_
PB10 -
CH3
- -
SCL
SCK/ - -
RX
- - -
OUT
- -
EVENTOUT
I2S2_CK
STM32WLE5/E4xx
TIM2/
LPTIM2
TIM2_ I2C3_ LPUART1_ COMP2_ CM4_

PB11 -
CH4
- -
SDA
- - -
TX
- - -
OUT
- -
EVENTOUT
SPI2_
TIM1_ TIM1_ I2C3_ LPUART1_ CM4_
PB12 - - NSS/ - - - - - - - -
Port B (continued)
BKIN BKIN SMBA RTS EVENTOUT

I2S2_WS
SPI2_
TIM1_ I2C3_ LPUART1_ CM4_
PB13 -
CH1N
- -
SCL
SCK/ - -
CTS
- - - - - -
EVENTOUT
I2S2_CK
TIM1_ I2C3_ SPI2_ CM4_

PB14 -
CH2N
- I2S2_MCK
SDA MISO
- - - - - - - - -
EVENTOUT
SPI2_
TIM1_ I2C2_ CM4_
DS13105 Rev 8
PB15 -
CH3N
- -
SCL
MOSI/ - - - - - - - - -
EVENTOUT
I2S2_SD

59/145
60/145

TIM2/
LPTIM2
LPTIM1_ I2C3_ LPUART1_ LPTIM2_ CM4_

PC0 -
IN1
- -
SCL
- - -
RX
- - - - -
IN1 EVENTOUT
SPI2_
LPTIM1_ I2C3_ LPUART1_ CM4_
PC1 -
OUT
- MOSI/
SDA
- - -
TX
- - - - - -
EVENTOUT
I2S2_SD
LPTIM1_ SPI2_ CM4_

PC2 -
IN2
- - -
MISO
- - - - - - - - -
EVENTOUT
SPI2_
LPTIM1_ LPTIM2_ CM4_
PC3 -
ETR
- - - MOSI/ - - - - - - - -
ETR EVENTOUT
I2S2_SD
CM4_
Port C
PC4 - - - - - - - - - - - - - - -
DS13105 Rev 8
EVENTOUT
CM4_
PC5 - - - - - - - - - - - - - - -
EVENTOUT
I2S2_ CM4_
PC6 - - - - -
MCK
- - - - - - - - -
EVENTOUT
CM4_
PC13 - - - - - - - - - - - - - - -
EVENTOUT
CM4_
PC14 - - - - - - - - - - - - - - -
EVENTOUT
CM4_
PC15 - - - - - - - - - - - - - - -
EVENTOUT
Port H
CM4_
PH3 - - - - - - - - - - - - - - -
EVENTOUT
STM32WLE5/E4xx
STM32WLE5/E4xx Electrical characteristics
5 Electrical characteristics
5.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS and, for parameter values
based on characterization results, measurements are performed on the UFQFPN48
package.
5.1.1 Minimum and maximum values

Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies, by tests in production
on 100 % of the devices, with an ambient temperature at TA = 25 °C and TA = TAmax (given
by the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ±3σ).
5.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 °C, VDD = VDDA = VBAT = 3 V.
Typical values are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95 % of the devices have an
error less than or equal to the value indicated (mean ± 2σ).
5.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
5.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 11.
5.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 12.
Figure 11. Pin loading conditions Figure 12. Pin input voltage
MCU pin MCU pin
C = 50 pF VIN
MSv68045V1 MSv68046V1
DS13105 Rev 8 61/145

133
Electrical characteristics STM32WLE5/E4xx
5.1.6 Power supply scheme
Figure 13. Power supply scheme

VBAT
1.55 to 3.6 V VBAT
Backup circuitry
(LSE, RTC and
backup registers)
Power switch
VDD VCORE
n x VDD
LPR
Kernel logic
Level shifter
OUT I/O
GPIOs (CPU, digital
n x 100 nF + 1 x 4.7 μF logic
IN and memories
n x VSS
VDDA
VDDA MR
VREF
ADC
10 nF + 1 μF VREF+ DAC
100 nF 1 μF COMPs
VREFBUF
VREF-
VSS
VDDRF
VDD
VDDSMPS SMPS
LDO/SMPS
4.7 μF VLXSMPS
Sub-GHz radio
15 μH
VFBSMPS
470 nF VDDRF1V5 RFLDO

VSSSMPS
VDDPA (= VDDRF1V5 or VDDSMPS) REG PA

Exposed pad
To all modules (VSS/VSSRF)
MSv64325V5
Caution: Each power supply pair (such as VDD/VSS or VDDA/VSS) must be decoupled with filtering
ceramic capacitors as shown in the above figure. These capacitors must be placed as close
as possible to (or below) the appropriate pins on the underside of the PCB to ensure the
good functionality of the device.
Note: For the UFQFPN48 and WLCSP59 package, VREF+ is internally connected to VDDA.
62/145 DS13105 Rev 8

5.1.7 Current consumption measurement
Figure 14. Current consumption measurement scheme

IDDSMPS
VDDSMPS VDDSMPS
IDDRF
VDDRF VDDRF
IDDVBAT
VBAT VBAT
IDD
VDD VDD
IDDA
VDDA VDDA
MSv64326V2
5.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in the tables below, may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Device mission profile (application conditions) is compliant with JEDEC JESD47
Qualification Standard, extended mission profiles are available on demand.
Table 21. Voltage characteristics(1)

Symbol Ratings Min Max Unit
External main supply voltage

VDDX - VSS (including VDD, VDDA, VDDRF, –0.3 3.9
VDDSMPS, VBAT, VREF+)
Input voltage on FT_xx pins min (VDD, VDDA, VDDRF, VDDSMPS) + 3.9(3)(4) V
VIN(2) Input voltage on TT pins VSS - 0.3 3.9

Input voltage on any other pin 3.9
Variations between different VDDX
|∆VDDx| - 50
power pins of the same domain
mV
Variations between all the different
|VSSx-VSS| - 50
ground pins(5)
Allowed voltage difference for
VREF+ - VDDA - 0.4 V
VREF+ > VDDA
1. All main power (VDD, VDDRF, VDDA, VBAT) and ground (VSS) pins must always be connected to the external power
supply, in the permitted range.
DS13105 Rev 8 63/145

133
2. VIN maximum must always be respected. Refer to the next table for the maximum allowed injected current values.
3. This formula must be applied only on the power supplies related to the I/O structure described in Table 19:
STM32WLE5/E4xx pin definition.
4. To sustain a voltage higher than 4 V, the internal pull-up/pull-down resistors must be disabled.
5. Include VREF- pin.
Table 22. Current characteristics

Symbol Ratings Max Unit
∑IVDD Total current into sum of all VDD power lines (source)(1) 130
∑IVSS Total current out of sum of all VSS ground lines (sink)(1) 130
IVDD(PIN) (1)
Maximum current into each VDD power pin (source) 130
IVSS(PIN) Maximum current out of each VSS ground pin (sink)(1) 100
Output current sunk by any I/O and control pin, except FT_f 20
IIO(PIN) Output current sunk by any FT_f pin 20
mA
Output current sourced by any I/O and control pin 20
Total output current sunk by sum of all I/Os and control pins(2) 100
∑IIO(PIN)
Total output current sourced by sum of all I/Os and control pins(2) 100
Injected current on FT_xx, TT and RST pins, except PB0 –5 / +0(4)
IINJ(PIN)(3)
Injected current on PB0 -5/0
∑|IINJ(PIN)| Total injected current (sum of all I/Os and control pins)(5) 25
1. All main power (VDD, VDDRF, VDDA, VBAT) and ground (VSS) pins must always be connected to the external power
supplies, in the permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins.
3. Positive injection (when VIN > VDD) is not possible on these I/Os and does not occur for input voltages lower than the
specified maximum value.
4. A negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer also to the previous table for the
maximum allowed input voltage values.
5. When several inputs are submitted to a current injection, the maximum ∑|IINJ(PIN)| is the absolute sum of the negative
injected currents (instantaneous values).
Table 23. Thermal characteristics

Symbol Ratings Value Unit
TSTG Storage temperature range -65 to +150

°C
TJ Maximum junction temperature 125
64/145 DS13105 Rev 8

5.3 Operating conditions
5.3.1 Main performances
Table 24. Main performances at VDD = 3 V

Parameter Test conditions Typ Unit
VBAT (VBAT = 3V, VDD = 0 V) 0.005

Shutdown 0.031
Standby (32-Kbyte RAM retention) 0.360
ICORE Core current consumption Stop 2, RTC enabled 1 µA
Sleep (16 MHz) 770
LPRun (2 MHz) 220
Run, SMPS ON (48 MHz) 3450
Rx boosted LoRa 125 kHz, SMPS ON 4.82
434 to 490 MHz, 14 dBm, 3.3 V 21
Tx low power
868 to 915 MHz, 14 dBm, 3.3 V 26 mA
434 to 490 MHz, 22 dBm, 3.3 V 120
Tx high power
868 to 915 MHz, 22 dBm, 3.3 V 107
5.3.2 General operating conditions
Table 25. General operating conditions

Symbol Parameter Conditions Min Max Unit
fHCLK Internal AHB clock frequency -

fPCLK1 Internal APB1 clock frequency - 0 48 MHz
fPCLK2 Internal APB2 clock frequency -
VDD Standard operating voltage - 1.8(1) 3.6
ADC or COMP used 1.62
DAC used 1.71
VDDA Analog supply voltage VREFBUF used 2.4 3.6 V
ADC, DAC, COMP and

0
VREFBUF not used
VBAT Backup operating voltage - 1.55 3.6
VFBSMPS SMPS feedback voltage - 1.4 3.6
VDDRF Minimum RF voltage - 1.8 3.6
TT I/O –0.3 VDD + 0.3
V
min between
VIN I/O input voltage
All I/O except TT –0.3 min (VDD, VDDA) + 3.6 V
and 5.5 V(2)(3)
DS13105 Rev 8 65/145

133
Table 25. General operating conditions (continued)

Power dissipation at
PD TA = 85 °C for suffix 6 version UFBGA73 - 392.0 mW
or TA = 105 °C for suffix 7(4)
Maximum power
Ambient temperature for 85
dissipation –40
suffix 6 version
Low-power dissipation(5) 105
TA °C
Maximum power
Ambient temperature for the 105
dissipation –40
suffix 7 version
Low-power dissipation(5) 125
Suffix 6 version 105
TJ Junction temperature range –40 °C
Suffix 7 version 125
1. When the reset is released, the functionality is guaranteed down to VBOR0 min.
2. This formula has to be applied only on the power supplies related to the I/O structure described in Table 19:
STM32WLE5/E4xx pin definition. Maximum I/O input voltage is the smallest value between min (VDD, VDDA) + 3.6 V and
5.5 V.
3. For operation with voltage higher than min (VDD, VDDA) + 0.3 V, the internal pull-up and pull-down resistors must be
disabled.
4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJ max (see Table 98: Package thermal
characteristics).
5. In low-power dissipation state, TA can be extended to this range, as long as TJ does not exceed TJ max (see Table 98:
Package thermal characteristics).
66/145 DS13105 Rev 8

5.3.3 Sub-GHz radio characteristics

Electrical characteristics of the sub-GHz radio are given with the following conditions unless
otherwise specified:
• VDD = 3.3 V. The current consumption is measured as described in Figure 14.
IDD includes current consumption of all supplies (VDDRF, VDDSMPS, VDD, VDDA, VBAT).
All peripherals except Sub-GHz radio are disabled and the system is in Standby mode.
• Temperature = 25 °C
• HSE32 = 32 MHz
• FRF = 434/868/915 MHz
• All RF impedances matched using reference design
• Reference design implementing a 32 MHz crystal oscillator
• Transmit mode output power defined in 50 Ω load
• FSK BER (bit error rate) = 0.1 %, 2-level FSK modulation without pre-filtering,
BR = 4.8 Kbit/s, FDA = 5 kHz, BW_F = 20 kHz
• LoRa PER (packet error rate) = 1 %, packet of 64 bytes, preamble of 8 bytes, error
correction code CR = 4/5, CRC on payload enabled, no reduced encoding, no implicit
header
• Sensitivities given using highest LNA gain step
• Power consumption measured with -140 dBm signal and AGC ON
• Blocking immunity, ACR and co-channel rejection, given for a single tone interferer and
referenced to sensitivity +6 dB, blocking tests performed with unmodulated signal
• Bandwidth expressed on DSB (double-sided band)
Table 26. Operating range of RF pads

Pad Description Max Unit
RFI_P/RFI_N RF input power 0

dBm
RFO_LP/RFO_HP/VR_PA Voltage Standing Wave Ratio (VSWR) 10.1
DS13105 Rev 8 67/145

133
Table 27. Sub-GHz radio power consumption

Symbol Mode Conditions Min Typ Max Unit
Deep-Sleep
mode (Sleep
All blocks off - 50 -
with cold
start)(1)(2) nA
Sleep mode Configuration retained - 140 -
(with warm
start)(2)(3) Configuration retained + RC64k - 810 -
Sleep, LDO LDO, band-gap, HSE32 off - 414 -

mode(4) RC 13 MHz on HSE32 on - 564 -
µA
Band-gap, HSE32 off - 700 -
Sleep, SMPS
RC 13 MHz on,
mode(4) HSE32 on - 950 -
SMPS 40 mA max
Standby mode
RC 13 MHz on, HSE32 off - 0.7 -
(RC 13 MHz on)
IDD SMPS mode 40 mA max settings - 1.05 -
Standby mode
(HSE32) mA
LDO mode - 0.99 -
Synthesizer SMPS mode used with 40 mA drive capability - 2.66 -

mode LDO mode - 4.05 -
FSK 4.8 Kbit/s - 4.47 -
Receive mode, LoRa 125 kHz - 4.82 -
SMPS mode SMPS 40 mA max
used Rx boosted, FSK 4.8 Kbit/s - 5.12 -
RX boosted, LoRa 125 kHz - 5.46 -
mA
FSK 4.8 Kbit/s - 8.18 -
Receive mode, LoRa 125 kHz 8.90

LDO mode used FSK 4.8 Kbit/s 9.52
RX boosted
LoRa 125 kHz 10.22
1. Cold start is equivalent to device at POR or when the device wakes up from Sleep mode with all blocks off.
2. Only Sub-GHz radio power consumption.
3. Warm start only happens when the device wakes up from Sleep mode with its configuration retained,
4. System in Stop 0 mode range 2.
68/145 DS13105 Rev 8

Table 28. Sub-GHz radio power consumption in transmit mode

Symbol Frequency band (MHz) PA match (conditions) Power output Typ Unit
+14 dBm, VDDRF = 3.3 V 23.5
Low power +10 dBm, VDDRF = 3.3 V 17.5

(optimized for 14 dBm) +14 dBm, VDDRF = 1.8 V 41.5
+10 dBm, VDDRF = 1.8 V 28.5
868 to 915
+15 dBm, VDDRF = 3.3 V 25.5
Low power +10 dBm, VDDRF = 3.3 V 15

(optimal settings)(1) +15 dBm, VDDRF = 1.8 V 51
+10 dBm, VDDRF = 1.8 V 25
+14 dBm, VDDRF = 3.3 V 22.5
Low power +10 dBm, VDDRF = 3.3 V 13.5

(optimized for 14 dBm) +14 dBm, VDDRF = 1.8 39.5
+10 dBm, VDDRF = 1.8 V 22.5
434 to 490
+15 dBm, VDDRF = 3.3 V 24.5
+10 dBm, VDDRF = 3.3 V 13.5
Low power (optimal settings)
+15 dBm, VDDRF = 1.8 V 43
+10 dBm, VDDRF = 1.8 V 21.5
IDD mA
868 to 915 45.5
Low-power PA, SMPS OFF +14 dBm, VDDRF = 3.3 V
434 to 490 43.5
+22 dBm, VDDRF = 3.3 V 119
High power +20 dBm, VDDRF = 3.3 V 107.5

(optimized for 22 dBm) +17 dBm, VDDRF = 3.3 V 98
868 to 915 +14 dBm, VDDRF = 3.3 V 92
+20 dBm, VDDRF = 3.3 V 92.5
High power (optimal settings) +17 dBm, VDDRF = 3.3 V 58
+14 dBm, VDDRF = 3.3 V 45.5
+22 dBm, VDDRF = 3.3 V 110.5
High power +20 dBm, VDDRF = 3.3 V 90

(optimized for 22 dBm) +17 dBm, VDDRF = 3.3 V 71
434 to 490 +14 dBm, VDDRF = 3.3 V 59
+20 dBm, VDDRF = 3.3 V 72
High power (optimal settings) +17 dBm, VDDRF = 3.3 V 43.5
+14 dBm, VDDRF = 3.3 V 38
1. Optimal settings can be used to optimize power consumption when the output power is NOT 22 dBm (high power) or
14 dBm (low power). In that case, a dedicated firmware configuration associated to a dedicated board matching network
(see AN5457 for details) corresponding to the custom output power, can be used.
DS13105 Rev 8 69/145

133
Table 29. Sub-GHz radio general specifications

Symbol Description Conditions Min Typ Max Unit
FR Frequency synthesizer range Low-power PA 150 - 960 MHz

(2)(5)
FSTEP Frequency synthesizer step High-resolution mode HSE / 2 - 095 - Hz
100 kHz offset - –100 -
PHN(1) Synthesizer phase noise
(2) 1 MHz offset - –120 - dBc/Hz
(868 to 915 MHz)
10 MHz offset - –135 -
TS_FS Synthesizer wakeup time From Standby, HSE32 mode - 40 -
TS_HO
Synthesizer hop time 10 MHz step - 40 -
P µs
(3)
TS_OS From Standby, RC normal mode
Crystal oscillator wakeup time - 170 -
C from HSE32 off
Crystal oscillator trimming range
OSC_
for crystal frequency error Min/max XTAL specifications ±15 ±30 - ppm
TRM
compensation(4)
Programmable
BR_F Bitrate, FSK 0.6 - 300(5) Kbit/s
(min modulation index is 0.5)
Programmable
FDA Frequency deviation, FSK 0.6 - 200 kHz
(FDA + BR_F/2 ≤ 250 kHz)
Min for SF12, BW_L = 7.8 kHz
BR_L Bitrate, LoRa 0.018 - 62.5(6) Kbit/s
Max for SF7, BW_L = 500 kHz
BW_L Signal BW, LoRa Programmable 7.8 - 500(6) kHz
SF Spreading factor for LoRa Programmable, chips/symbol = 2SF 5 - 12 -
1. Phase Noise specifications are given for the recommended PLL bandwidth to be used for the specific modulation/BR,
optimized settings may be used for specific applications.
2. Phase Noise is not constant over frequency, due to the topology of the PLL. For two frequencies close to each other, the
phase noise may change significantly
3. Wakeup time till crystal oscillator frequency is within ±10 ppm.
4. OSC_TRIM is the available trimming range to compensate for crystal initial frequency error and to allow crystal temperature
compensation implementation. The total available trimming range is higher and allows the compensation for all device
process variations
5. Maximum bit rate is assumed to scale with the RF frequency: for example 300 Kbit /s in the 869-to-915 MHz frequency
band and only 50 Kbit/s at 150 MHz.
6. For RF frequencies below 400 MHz, there is a scaling between the frequency and supported bandwidth. Some bandwidths
may not be available below 400 MHz.
70/145 DS13105 Rev 8

Table 30. Sub-GHz radio receive mode specifications

BR = 0.6 Kbit/s, FDA = 0.8 kHz,

- –125 -
BW = 4 kHz
BR = 1.2 Kbit/s, FDA = 5 kHz,
- –123 -
BW = 20 kHz
Sensitivity 2-FSK,
RX boosted gain, BR = 4.8 Kbit/s, FDA = 5 kHz,
RXS_2FB - –117 -
split RF paths for RX and Tx, BW = 20 kHz
RF switch insertion loss excluded
- –108 -
BW = 160 kHz
BR = 250 Kbit/s, FDA = 125 kHz,
- –103 -
BW = 500 kHz
BW = 10.4 kHz, SF = 7 - –135 -
BW = 10.4 kHz, SF = 12 - –148 -
dBm
BW = 125 kHz, SF = 7 - –125 -
Sensitivity LoRa,
RX boosted gain, BW = 125 kHz, SF = 12 - –138 -
RXS_LB
split RF paths for RX and Tx, BW = 250 kHz, SF = 7 - –122 -
RF switch insertion loss excluded
BW = 250 kHz, SF = 12 - –135 -
BW = 500 kHz, SF = 7 - –118 -
BW = 500 kHz, SF = 12 - –130 -
Sensitivity 2-FSK, RX power
RSX_2F saving gain with direct tie - –115 -
BW = 20 kHz
connection between RX and Tx
Sensitivity LoRa, RX power
RXS_L saving gain with direct tie BW = 125 kHz, SF = 12 - –135 -
connection between RX and Tx
CCR_F Co-channel rejection, FSK - - –9 -
SF = 7 - 7 -
CCR_L Co-channel rejection, LoRa
SF = 12 - 19 -
ACR_F Adjacent channel rejection, FSK Offset = ±50 kHz - 44 -
Offset = ±1.5 x BW_L,
- 60 -
BW = 125 kHz, SF = 7
ACR_L Adjacent channel rejection, LoRa
Offset = ±1.5 x BW_L, dB
- 71 -
BW = 125 kHz, SF = 12
Offset = ±1 MHz, BR = 4.8 Kbit/s,
- 67 -
FDA = 5 kHz, BW = 20 kHz
BI_F Blocking immunity, FSK - 70 -
- 76 -
DS13105 Rev 8 71/145

133
Table 30. Sub-GHz radio receive mode specifications (continued)

Offset = ±1 MHz, BW = 125 kHz,

- 87 -
SF = 12
BI_L Blocking immunity, LoRa - 91 - dB
SF = 12
- 96 -
SF = 12
Unwanted tones are 1 MHz and
1.96 MHz above LO. - –9 -
868 to 915 MHz band
IIP3 Third order input intercept point dBm
Unwanted tones are 1 MHz and
1.96 MHz above LO. - –15 -
433 MHz band
Without IQ calibration - 30 -
IMA Image attenuation dB
With IQ calibration - 54 -
BW_F DSB channel filter BW, FSK Programmable, typical values 4.8 - 467 kHz
TS_RX Receiver wakeup time FS to RWX - 41 - µs
Maximum tolerated frequency All bandwidths, ±25 % of BW.

offset between transmitter and The tighter limit between this line - ±25 - BW
receiver, SF7 to SF12 and the three lines below applies.
FERR_L SF12 –50 - 50
Maximum tolerated frequency
offset between transmitter and SF11 –100 - 100 ppm
receiver, SF10 to SF12
SF10 –200 - 200
Table 31. Sub-GHz radio transmit mode specifications

Highest power step setting

- +15(1) -
for low-power PA (LP PA)
TXOP Max RF output power dBm
Highest power step setting
- +22 -
for high-power PA (HP PA)
LP PA, under SMPS or LDO
- 0.5 -
VDDop range from 1.8 to 3.7 V
RF output power drop HP PA, +22 dBm, VDD = 2.7 V - 2 -
TXDRP dB
versus supply voltage
HP PA, +22 dBm, VDD = 2.4 V - 3 -
HP PA, +22 dBm, VDD = 1.8 V - 6 -
Programmable in 31 steps,
TXPRNG RF output power range TXOP-31 - TXOP dBm
typical value
RF output power step
TXACC - - ±2 - dB
accuracy
72/145 DS13105 Rev 8

Table 31. Sub-GHz radio transmit mode specifications (continued)

TXRMP PA ramping time Programmable 10 - 3400

Frequency synthesizer µs
TS_TX TX wakeup time - 36 + PA ramping -
enabled
1. For low-power PA, +15 dBm maximum RF output power can be reached with optimal settings.
Table 32. Sub-GHz radio power management specifications

Frequency
(MHz)
Symbol Description Conditions Unit
470 490 868
TRPOR Required POR reset pulse duration For VDD ≥ 1.8 V 50 100 - µs
VEOLL End-of-life low-threshold voltage - 1.81 1.89 1.96
V
VEOLH End-of-life high-threshold voltage - 1.86 1.94 2.1
VEOLD End-of-life hysteresis voltage VEOLH - VEOLL 50 53 56 mV
LDO or SMPS over process,
VREG Main regulated supply 1.47 1.55 1.62 V
voltage and temperature range
Load transient for ILSMPS 100 µA to High BW mode - 25 -
LDTRSMPS 100 mA in 10 µs mV
LDO running Low BW mode - 47 -
ILSMPS SMPS load current - - - 100 mA

SMPS high power, VDD = 3.3 V - 538 -
IDDSMPS SMPS quiescent current µA
SMPS low power, VDD = 3.3 V - 460 -
SMPS 100 mA max VDD = 3.3 V,
- 71 -
ILSMPS = 6 mA
- 89 -
ILSMPS = 50 mA
SMPS converter average efficiency
EFFSMPS EFF = VREG x ILOAD / - 88 - %
ILSMPS = 6 mA
VDDSMPS x IDD
- 91 -
ILSMPS = 50 mA
- 86 -
ILSMPS = 100 mA
Cout Shared between LDO and SMPS ±20 % tolerance - 470 - nF
Lout SMPS inductor - - 15 - µH
TSSMPS Sleep and Sleep, SMPS startup time For ILIM = 50 mA - 70 - µs
DS13105 Rev 8 73/145

133
Table 32. Sub-GHz radio power management specifications (continued)

Frequency
(MHz)
Symbol Description Conditions Unit
470 490 868
VDD = 3.3 V,
ILOAD = 0 to 100 mA, - 95 -
current limiter off
IDDLDO LDO quiescent current VDD = 3.3 V, ILOAD = 100 mA, µA
- 380 -
current limiter on
VDD = 3.3 V, ILOAD = 50 mA,
- 280 -
current limiter on
ILDO LDO load current - - 100 - mA
Load transient for ILDO 100 µA to
LDTRLDO - - 25 - mV
100 mA in 10 µs
TSLDO Sleep and Sleep, LDO startup time For ILIM = 50 mA - 60 - µs
VDIG Digital regulator target voltage - 1.14 1.2 1.26 V
(1)
ILM Current limiter max value - 25 50 200 mA
1. The default current limiter value is set to 50 mA.
5.3.4 Operating conditions at power-up/power-down

Parameters given in the table below are derived from tests performed under the ambient
temperature condition summarized in Table 25: General operating conditions.
Table 33. Operating conditions at power-up/power-down

Symbol Parameter Min Max Unit
VDD rise time rate - ∞

tVDD
VDD fall time rate 10 ∞
VDDA rise time rate 0 ∞
tVDDA µs/V
VDDA fall time rate 10 ∞
VDDRF rise time rate - ∞
tVDDRF
VDDRF fall time rate - ∞
74/145 DS13105 Rev 8

5.3.5 Embedded reset and power-control block characteristics

temperature conditions summarized in Table 25: General operating conditions.
Table 34. Embedded reset and power-control block characteristics

Symbol Parameter Conditions(1) Min Typ Max Unit
tRSTTEMPO(2) Reset temporization after BOR0 is detected VDD rising - 250 400 μs
Rising edge 1.72 1.76 1.80
VBOR0(2) Brownout reset threshold 0
Falling edge 1.70 1.74 1.78
Rising edge 2.06 2.10 2.14
VBOR1 Brownout reset threshold 1
Rising edge 2.26 2.31 2.35
Rising edge 2.56 2.61 2.66
V
Rising edge 2.85 2.90 2.95
Rising edge 1.88 1.95 2.02
VPVD0 Programmable voltage detector threshold 0
Rising edge 2.26 2.31 2.36
VPVD1 PVD threshold 1
Rising edge 2.41 2.46 2.51
Rising edge 2.56 2.61 2.66
Rising edge 2.69 2.74 2.79
V
Rising edge 2.85 2.91 2.96
Rising edge 2.92 2.98 3.04
Hysteresis in
- 20 -
continuous mode
Vhyst_BORH0 Hysteresis voltage of BORH0
Hysteresis in
- 30 - mV
other mode
Hysteresis voltage of BORH (except
Vhyst_BOR_PVD - - 100 -
BORH0) and PVD
BOR(3) (except BOR0) and PVD
IDD (BOR_PVD)(2) - - 1.1 1.6 µA
consumption from VDD
DS13105 Rev 8 75/145

133
Table 34. Embedded reset and power-control block characteristics (continued)

Rising edge 1.61 1.65 1.69

VPVM3 VDDA peripheral voltage monitoring V
Vhyst_PVM3 PVM3 hysteresis - - 10 - mV
(2)
IDD (PVM3) PVM3 consumption from VDD - - 2 - µA
1. Continuous mode means Run and Sleep modes, or temperature sensor enable in LPRun and LPSleep modes.
2. Guaranteed by design.
3. BOR0 is enabled in all modes (except Shutdown) and its consumption is therefore included in the supply current
characteristics tables.
5.3.6 Embedded voltage reference

temperature and supply voltage conditions summarized in Table 25: General operating
conditions.
Table 35. Embedded internal voltage reference

Symbol Parameter Conditions Min Typ Max Unit
VREFINT Internal reference voltage –40 °C < TJ < +105 °C 1.182 1.212 1.232 V
ADC sampling time when reading
tS_vrefint (1) - 4(2) - -
the internal reference voltage
µs
Start time of reference voltage
tstart_vrefint - - 8 12(2)
buffer when ADC is enable
VREFINT buffer consumption from
IDD(VREFINTBUF) - - 12.5 20(2) µA
VDD when converted by ADC
Internal reference voltage spread
∆VREFINT VDD = 3.3 V - 5 7.5(2) mV
over the temperature range
TCoeff Temperature coefficient –40 °C < TJ < +105 °C - 30 50(2) ppm/°C
ACoeff Long term stability 1000 hours, T = 25 °C - 300 1000(2) ppm
VDDCoeff Voltage coefficient 3.0 V < VDD < 3.6 V - 250 1200(2) ppm/V
VREFINT_DIV1 1/4 reference voltage 24 25 26
%
VREFINT_DIV2 1/2 reference voltage - 49 50 51
VREFINT
VREFINT_DIV3 3/4 reference voltage 74 75 76
1. The shortest sampling time can be determined in the application by multiple iterations.
76/145 DS13105 Rev 8

Figure 15. VREFINT versus temperature

V
1.235
1.23
1.225
1.22
1.215
1.21
1.205
1.2
1.195
1.19
1.185
-40 -20 0 20 40 60 80 100 120 °C
Mean Min Max MSv66005V3
5.3.7 Supply current characteristics

The current consumption is a function of several parameters and factors such as operating
voltage, ambient temperature, I/O pin loading, device software configuration, operating
frequencies, I/O pin switching rate, program location in memory and executed binary code.
The current consumption is measured as described in Figure 14.
Typical and maximum current consumption

The device is put under the following conditions:
• All I/O pins are in analog input mode.
• All peripherals are disabled, except when explicitly mentioned.
• The Flash memory access time is adjusted with the minimum wait-states number,
depending on the fHCLK frequency. Refer to the table ‘Number of wait states according
to Flash clock (HCLK3) frequency’ in the reference manual (RM0461).
• fPCLK = fHCLK when the peripherals are enabled.
• fPCLK = fHCLK = fHCLKS for the Flash memory and shared peripherals.
Parameters given in the tables below (Table 36 to Table 52) are derived from tests
performed under ambient temperature and supply voltage conditions summarized in
Table 25: General operating conditions.
DS13105 Rev 8 77/145

133
78/145
Electrical characteristics
Table 36. Current consumption in Run and LPRun modes, CoreMark code with data
running from Flash memory, ART enable (cache ON, prefetch OFF)
Conditions Typ Max(1)
Symbol Parameter Unit
- Voltage fHCLK 25 °C 55 °C 85 °C 105 °C 25 °C 85 °C 105 °C
scaling (MHz)
16 1.85 1.90 1.95 2.10 2.20 2.40 2.80
Range 2 8 1.10 1.15 1.20 1.30 1.40 1.60 1.90
2 0.585 0.610 0.670 0.760 - - -
16 1.50 1.45 1.65 1.70 - - -
SMPS
8 1.00 1.05 1.05 1.10 - - -
Range 2
f =f 2 0.730 0.750 0.780 0.830 - - -
Supply current HCLK MSI
IDD (Run) All peripherals
in Run mode 48 5.55 5.65 5.80 5.95 7.40 11.0 14.0
disabled
DS13105 Rev 8
Range 1 32 3.85 3.95 4.05 4.20 5.60 8.40 13.0 mA

16 2.15 2.20 2.30 2.45 3.70 6.60 11.0
48 3.40 3.45 3.55 3.60 - - -
SMPS
32 2.50 2.55 2.60 2.65 - - -
Range 1
16 1.60 1.60 1.65 1.70 - - -
2 0.220 0.235 0.290 0.380 0.270 0.490 0.880
IDD Supply current fHCLK = fMSI
1 0.120 0.135 0.185 0.275 0.150 0.390 0.780
(LPRun) in LPRun mode All peripherals disabled
0.4 0.058 0.0715 0.120 0.210 0.084 0.330 0.710
1. Guaranteed by characterization results, unless otherwise specified.
STM32WLE5/E4xx
Table 37. Current consumption in Run and LPRun modes, CoreMark code
STM32WLE5/E4xx
with data running from SRAM1
- Voltage fHCLK 25 °C 55 °C 85 °C 105 °C 25 °C 85 °C 105 °C
scaling (MHz)
16 1.90 1.90 2.00 2.10 2.20 2.40 2.80
Range 2 8 1.10 1.15 1.20 1.30 1.40 1.60 2.00
2 - - - - - - -
16 1.40 1.45 1.50 1.55 - - -
SMPS
8 1.00 1.05 1.05 1.10 - - -
Range 2
fHCLK = fMSI 2 0.730 0.750 0.780 0.825 - - -
IDD Supply current
All peripherals
(Run) in Run mode 48 5.65 5.75 5.90 6.05 6.50 6.70 7.10
disabled
Range 1 32 3.90 4.00 4.10 4.25 4.60 4.80 5.20 mA
DS13105 Rev 8
16 2.20 2.25 2.30 2.45 2.50 2.80 3.20

48 3.45 3.50 3.60 3.65 - - -
SMPS
32 2.50 2.55 2.60 2.70 - - -
Range 1
16 1.60 1.60 1.65 1.70 - - -
2 0.220 0.230 0.285 0.375 0.240 0.480 0.860
IDD Supply current fHCLK = fMSI
1 0.120 0.130 0.180 0.270 0.140 0.380 0.770
(LPRun) in LPRun mode All peripherals disabled
0.4 0.052 0.064 0.115 0.205 0.077 0.320 0.710
79/145
80/145
running from Flash memory, ART enable (cache ON, prefetch OFF)
Conditions Typ Typ
Symbol Parameter Unit Unit
- Voltage scaling Code 25 °C 25 °C
Reduced code 1.90 118.75

(1)
CoreMark 1.85 115.63
Range 2
Dhrystone 2.1 1.85 115.63
fHCLK = 16 MHz
Fibonacci 1.80 112.50
While(1) 1.60 100.00
(1)
SMPS CoreMark 1.40 87.50
Range 2 Dhrystone 2.1 1.40 87.50
DS13105 Rev 8
fHCLK = 16 MHz Fibonacci 1.40 87.50
Supply current in fHCLK = fMSI While(1) 1.30 81.25

IDD(Run) mA µA/MHz
Run mode All peripherals disabled Reduced code 5.70 118.75
CoreMark(1) 5.55 115.63
Range 1
Dhrystone 2.1 5.50 114.58
fHCLK = 48 MHz
While(1) 4.65 96.88
SMPS CoreMark(1) 3.40 70.83

Range 1 Dhrystone 2.1 3.40 70.83
fHCLK = 48 MHz
STM32WLE5/E4xx
While(1) 2.90 60.42
STM32WLE5/E4xx
running from Flash memory, ART enable (cache ON, prefetch OFF) (continued)
Conditions Typ Typ

CoreMark(1) 0.220 110.00
Supply current in fHCLK = fMSI = 2 MHz
IDD(LPRun) Dhrystone 2.1 0.220 mA 110.00 µA/MHz
LPRun mode All peripherals disabled
While(1) 0.175 87.50
1. CoreMark used for characterization results provided in Table 36 and Table 38.
DS13105 Rev 8
81/145
82/145
with different codes running from SRAM1
Conditions Typ Typ

(1)
CoreMark 1.90 118.75
Range 2
Dhrystone 2.1 1.90 118.75
fHCLK = 16 MHz
While(1) 1.75 109.38
(1)
Range 2 CoreMark 1.45 90.63
SMPS ON Dhrystone 2.1 1.45 90.63
DS13105 Rev 8
fHCLK = 16 MHz Fibonacci 1.45 90.63
Supply current fHCLK = fMSI While(1) 1.35 84.38

IDD(Run) mA µA/MHz
in Run mode All peripherals disabled Reduced code 5.90 122.92
CoreMark(1) 5.65 117.71
Range 1
Dhrystone 2.1 5.70 118.75
fHCLK = 48 MHz
While(1) 5.10 106.25
Range 1 CoreMark(1) 3.45 71.88

SMPS ON Dhrystone 2.1 3.50 72.92
fHCLK = 48 MHz
STM32WLE5/E4xx
While(1) 3.15 65.63
STM32WLE5/E4xx
with different codes running from SRAM1 (continued)
Conditions Typ Typ

CoreMark(1) 0.220 110.00
(2) Supply current fHCLK = fMSI = 2 MHz
IDD(LPRun) Dhrystone 2.1 0.225 mA 112.50 µA/MHz
in LPRun mode All peripherals disabled
While(1) 0.195 97.50
1. CoreMark used for characterization results provided in Table 36 and Table 38.
2. Flash memory in power-down mode.
DS13105 Rev 8
83/145
Table 40. Current consumption in Sleep and LPSleep modes, Flash memory ON
84/145
Voltage fHCLK
- 25 °C 55 °C 85 °C 105 °C 25 °C 85 °C 105 °C
scaling (MHz)
16 0.770 0.800 0.860 0.955 1.00 1.30 1.60

Range 2 8 0.570 0.600 0.655 0.745 0.780 0.990 1.40
2 0.445 0.470 0.525 0.615 0.650 0.860 1.30
48 1.70 1.70 1.80 1.90 2.10 2.30 2.70
Supply current fHCLK = fMSI
IDD(Sleep) Range 1 32 1.25 1.30 1.40 1.50 1.60 1.90 2.30
in Sleep mode All peripherals disabled
16 0.845 0.875 0.945 1.05 1.10 1.40 1.80
48 1.35 1.40 1.45 1.50 - - - mA
SMPS
32 1.15 1.15 1.20 1.25 - - -
Range 1
DS13105 Rev 8
16 0.895 0.915 0.950 1.00 - - -

2 0.068 0.0805 0.130 0.220 0.095 0.330 0.720
Supply current 1 0.044 0.0565 0.105 0.195 0.069 0.310 0.700
fHCLK = fMSI
IDD(LPSleep) in LPSleep
All peripherals disabled 0.4 0.0225 0.040 0.0885 0.180 0.052 0.290 0.680
mode
0.1 0.018 0.032 0.081 0.170 0.045 0.280 0.670
Table 41. Current consumption in LPSleep mode, Flash memory in power-down

- fHCLK (MHz) 25 °C 55 °C 85 °C 105 °C 25 °C 85 °C 105 °C
STM32WLE5/E4xx
2 58.0 74.5 125 215 86.0 330 710
f =f
IDD Supply current in HCLK MS 1 35.5 50.5 99.0 190 60.0 300 690
All peripherals µA
(LPSleep) LPSleep mode 0.4 18.5 33.5 81.5 170 41.0 280 670
disabled
0.1 11.0 26.5 74.5 165 36.0 280 660
Table 42. Current consumption in Stop 2 mode
STM32WLE5/E4xx
VDD (V) 0 °C 25 °C 55 °C 85 °C 105 °C 0 °C 25 °C 85 °C 105 °C
1.8 0.545 0.830 2.45 8.45 13.5 1.20 2.20 24.0 66.0
IDD Supply current in Stop 2 mode 2.4 0.525 0.850 2.60 8.80 14.0 - - - -
(Stop 2) RTC disabled 3.0 0.605 0.885 2.80 9.25 14.5 1.10 2.60 26.0 69.0
3.6 0.630 0.935 3.10 9.75 15.5 1.40 2.80 26.0 71.0
µA
1.8 0.650 0.880 2.55 8.25 13.5 1.30 2.30 24.0 66.0
IDD
Supply current in Stop 2 mode 2.4 0.630 0.945 2.70 8.85 14.0 - - - -
(Stop 2 with
RTC enabled, clocked by LSI(2) 3.0 0.715 1.00 2.90 9.70 15.0 1.40 2.80 26.0 69.0
RTC)
3.6 0.750 1.10 3.15 10.5 15.5 1.50 3.00 26.0 71.0
1. Guaranteed based on test during characterization, unless otherwise specified.
2. LSI using LSIPRE = 1 configuration.
DS13105 Rev 8
Table 43. Current consumption during wakeup from Stop 2 mode

Typ at 25 °C
Conditions Unit
VDD = 1.8 V VDD = 2.4 V VDD = 3.0 V VDD = 3.6 V
Wakeup clock: MSI 4 MHz, voltage range 2 2.93 3.22 3.45 4.79
Wakeup clock: MSI 4 MHz, voltage range 1 3.03 3.14 3.51 4.66 nAs
85/145
86/145
VDD (V) 0 °C 25 °C 55 °C 85 °C 105 °C 0 °C 25 °C 85 °C 105 °C
1.8 2.05 4.00 14.0 47.0 74.5 6.10 20.0 200 480
IDD Supply current in Stop 1 mode 2.4 2.15 3.95 14.0 47.0 75.0 - - - -
(Stop 1) RTC disabled 3.0 2.15 4.15 14.0 47.5 75.5 5.90 20.0 200 490
3.6 2.25 4.20 14.0 48.0 76.5 6.20 20.0 200 490
µA
1.8 2.15 4.10 14.0 47.0 75.0 6.30 20.0 200 480
IDD
Supply current in Stop 1 mode 2.4 2.15 4.10 14.0 47.5 75.5 - - - -
(Stop 1with
RTC enabled, clocked by LSI(2) 3.0 2.25 4.20 14.0 47.5 76.0 6.40 21.0 200 490
RTC)
3.6 2.30 4.15 14.5 48.5 77.0 6.70 21.0 200 490
2. LSI using LSIPRE = 1 configuration.
DS13105 Rev 8

Typ at 25 °C
Conditions Unit
STM32WLE5/E4xx
STM32WLE5/E4xx
Symbol Parameter VDD Unit
- 0 °C 25 °C 55 °C 85 °C 105 °C 0 °C 25 °C 85 °C 105 °C
(V)
1.8 335 345 365 415 455 480 500 740 1200
IDD Supply current in Stop 0 mode 2.4 360 370 395 445 485 - - - -
µA
(Stop 0) RTC disabled 3.0 390 400 425 475 515 540 570 800 1200
3.6 425 435 460 515 550 580 600 840 1300

Typ at 25 °C
Conditions Unit
DS13105 Rev 8
87/145
Table 48. Current consumption in Standby mode
88/145
- 0 °C 25 °C 55 °C 85 °C 105 °C 0 °C 25 °C 85 °C 105 °C
(V)
1.8 0.009 0.027 0.245 1.00 2.40 - - - -
2.4 0.022 0.051 0.340 1.35 2.85 - - - -
No retention
Supply current in 3.0 0.046 0.071 0.470 1.75 3.40 - - - -
Standby mode 3.6 0.075 0.125 0.650 2.30 4.05 - - - -
IDD
RTC disabled
(Standby) Backup registers 1.8 0.130 0.205 0.820 2.90 5.55 0.200 0.550 8.20 24.0
retained 2.4 0.140 0.225 0.915 3.25 6.05 - - - -
SRAM2 retained
3.0 0.165 0.255 1.05 3.70 6.60 0.280 0.710 9.40 27.0
3.6 0.190 0.300 1.20 4.25 7.25 0.330 0.770 10.0 28.0
µA
1.8 0.215 0.295 0.895 3.10 5.30 - - - -
2.4 0.230 0.325 0.990 3.45 5.95 - - - -
DS13105 Rev 8
RTC clocked by LSI

Supply current in (PREDIV = 1)
3.0 0.260 0.360 1.15 3.95 6.85 - - - -
Standby mode
IDD 3.6 0.305 0.425 1.30 4.55 7.85 - - - -
(backup registers
(Standby
and SRAM2 1.8 0.270 0.350 0.975 3.15 5.80 - - - -
with RTC)
retained) RTC clocked by LSE 2.4 0.295 0.390 1.10 3.50 6.25 - - - -
RTC enabled quartz(2) in low drive
mode 3.0 0.345 0.445 1.25 4.00 6.85 - - - -
3.6 0.415 0.535 1.45 4.60 7.55 - - - -
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
Table 49. Current consumption during wakeup from Standby mode

Typ at 25 °C
Symbol Conditions Unit
STM32WLE5/E4xx
Wakeup clock: MSI 4 MHz 23.5 81.3 111 114
IDD (wakeup from Standby) nAs
Wakeup clock: MSI 8 MHz 15.2 15.7 17.3 19.6
Table 50. Current consumption in Shutdown mode
STM32WLE5/E4xx
- 0 °C 25 °C 55 °C 85 °C 105 °C 0 °C 25 °C 85 °C 105 °C
(V)
1.8 0.001 0.008 0.105 0.380 0.995 0.001 0.043 1.70 6.40
Supply current in Shutdown mode 2.4 0.008 0.018 0.135 0.445 1.20 - - - -
IDD
RTC disabled
(Shutdown) 3.0 0.018 0.031 0.180 0.545 1.45 0.078 0.150 2.40 8.50
Backup registers retained
3.6 0.041 0.062 0.260 0.690 1.80 0.110 0.190 2.90 9.90
1.8 0.054 0.065 0.145 0.545 1.35 - - - -
RTC clocked by 2.4 0.090 0.105 0.200 0.665 1.60 - - - -

µA
an external clock 3.0 0.160 0.175 0.295 0.860 1.95 - - - -
Supply current
in Shutdown
DS13105 Rev 8
IDD 3.6 0.250 0.280 0.440 1.15 2.45 - - - -

mode (backup
(Shutdown
registers 1.8 0.140 0.155 0.270 0.605 1.20 - - - -
with RTC)
retained)
RTC enabled RTC clocked by 2.4 0.165 0.185 0.315 0.705 1.40 - - - -
LSE quartz (2) in
low drive mode 3.0 0.205 0.225 0.380 0.855 1.70 - - - -
3.6 0.265 0.295 0.500 1.10 2.10 - - - -

89/145
Table 51. Current consumption in VBAT mode
90/145
Conditions Typ Max
Symbol Parameter VBAT Unit
- 0 °C 25 °C 55 °C 85 °C 105 °C 105 °C
(V)
1.8 1.00 3.00 19.0 95.0 180 1.00
2.4 1.00 3.00 22.0 110 200 1.00
RTC disabled
3.0 1.00 5.00 31.0 150 270 1.00
Backup domain 3.6 3.00 11.0 50.0 220 380 3.00
IDD(VBAT) nA
supply current 1.8 140 150 180 275 390 140
RTC enabled and 2.4 155 170 200 310 435 155
clocked by LSE quartz(1) 3.0 185 200 235 375 545 185
3.6 230 245 295 485 710 230
DS13105 Rev 8
Table 52. Current under Reset condition

Conditions Typ
Symbol Unit
VDD (V) 25 °C
1.8 V 600
2.4 V 650
IDD(RST) µA
3.0 V 700
3.6 V 780
STM32WLE5/E4xx
I/O system current consumption

The current consumption of the I/O system has two components: a static and a dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 72: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, these pins must either be configured in analog mode, or forced internally to a
definite digital value. This can be done either by using pull-up/down resistors or by
configuring the pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption measured previously (see
Table 53: Peripheral current consumption, the I/Os used by an application also contribute to
the current consumption. When an I/O pin switches, it uses the current from the I/O supply
voltage to supply the I/O pin circuitry and to charge/discharge the capacitive load (internal or
external) connected to the pin:
I SW = V DD × f SW × C
where
• ISW is the current sunk by a switching I/O to charge/discharge the capacitive load.
• VDD is the I/O supply voltage.
• fSW is the I/O switching frequency.
• C is the total capacitance seen by the I/O pin: C = CIo+ CEXT .
• CEXT is the PCB board capacitance plus any connected external device pin
capacitance.
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
DS13105 Rev 8 91/145

133
On-chip peripheral current consumption

The current consumption of the on-chip peripherals is given in the table below. The device is
placed under the following conditions:
• All I/O pins are in analog mode.
• The given value is calculated by measuring the difference of the current consumptions:
– when the peripheral is clocked on
– when the peripheral is clocked off
• Ambient operating temperature and supply voltage conditions summarized in Table 21:
Voltage characteristics.
• The power consumption of the digital part of the on-chip peripherals is given in the table
below. The power consumption of the analog part of the peripherals (where applicable)
is indicated in each related section of the datasheet.
Table 53. Peripheral current consumption

Peripheral Range 1 Range 2 LPRun and LPSleep Unit
CRC1 0.42 0.38 1.00

DMA1 2.29 1.88 1.45
AHB1 DMA2 2.50 1.94 1.50 µA/MHz
DMAMUX1 3.96 3.38 2.50
All AHB1 peripherals 9.17 7.50 9.30
GPIOA 0.01 0.12 0.20
GPIOB 0.01 0.12 0.15
AHB2 GPIOC 0.01 0.12 0.15 µA/MHz
GPIOH 0.01 0.06 0.10
AES1 2.50 2.13 1.80
FLASH 7.92 6.56 11.3
PKA 3.33 2.75 2.15
RNG1 1.04 N/A N/A
AHB3 µA/MHz
RNG1 independent clock domain 0.62 N/A N/A
SRAM1 0.62 0.38 0.55
SRAM2 0.42 0.37 0.50
(1)
DAC 0.83 0.69 0.50
I2C1 1.67 1.37 1.05
I2C1 independent clock domain 2.29 1.94 1.40
APB1 µA/MHz
I2C2 1.67 1.37 1.05
I2C3 1.67 1.37 0.90
92/145 DS13105 Rev 8

Table 53. Peripheral current consumption (continued)

Peripheral Range 1 Range 2 LPRun and LPSleep Unit

LPTIM1 1.67 1.44 1.50
LPTIM1 independent clock domain 2.50 2.19 1.45
LPTIM2 1.67 1.37 0.90
LPTIM3 0.83 0.69 0.65
LPUART1 2.08 1.81 3.55
APB1 LPUART1 independent clock µA/MHz
2.50 2.06 1.35
domain
RTCAPB 2.08 1.81 1.50
SPI2 1.46 1.19 0.90
TIM2 4.58 3.81 2.95
USART2 1.88 1.56 1.35
USART2 independent clock domain 4.58 3.75 3.05
WWDG1 0.42 0.31 0.05
(1)
All APB1 peripherals 19.6 16.1 20.2
ADC 1.25 1.00 0.70
ADC independent clock domain 0.21 0.13 0.30
SPI1 1.25 1.06 0.90
TIM1 6.25 5.19 8.30
APB2 TIM16 2.29 1.94 1.35 µA/MHz
TIM17 2.29 1.87 1.25
USART1 1.67 1.38 1.00
USART1 independent clock domain 4.17 3.38 2.90
(1)
All APB2 peripherals 15.8 13.0 15.8
SUBGHZSPI 1.46 1.25 1.10
APB3
All APB3 peripherals 1.46 1.25 1.10 µA/MHz
All peripherals(1) 62.9 52.3 59.7
1. Without independent clocks.
5.3.8 Wakeup time from low-power modes and voltage scaling

transition times
The wakeup times given in the table below, are the latency between the event and the
execution of the first user instruction.
The device goes in low-power mode after the WFE (wait for event) instruction.
DS13105 Rev 8 93/145

133
Table 54. Low-power mode wakeup timings(1)

Symbol Parameter Conditions Typ Max Unit
Wakeup time from

tWUSLEEP - 0.188 0.222
Sleep to Run mode
µs
Wakeup time from Wakeup in Flash with memory in power-down
tWULPSLEEP LPSleep to LPRun during LPSleep mode (FPDS = 1 in PWR_CR1) 3.81 4.38
mode and with clock MSI = 2 MHz
Wakeup clock MSI = 48 MHz 2.14 2.90

Wakeup clock HSI16 = 16 MHz 1.99 -
Wakeup time from To Run mode
(Range 1) Wakeup clock HSI16 = 16 MHz
tWUSTOP0 Stop 0 mode in Flash 1.01 1.13 µs
with HSIKERON enabled
memory(2)
To LPRun mode Wakeup clock MSI = 2 MHz 10.5 12.3
Wakeup clock HSI16 = 16 MHz 5.71 7.10
Wakeup time from To Run mode
(Range 1) Wakeup clock HSI16 = 16 MHz
tWUSTOP1 Stop 1 mode in Flash 4.57 6.52 µs
with HSIKERON enabled
memory(2)
To LPRun mode Wakeup clock MSI = 2 MHz 10.6 13.9
Wakeup time from Wakeup clock HSI16 = 16 MHz 6.28 7.51

To Run mode
tWUSTOP2 Stop 2 mode in Flash Wakeup clock HSI16 = 16 MHz µs
(Range 1) 6.26 7.53
memory(2) with HSIKERON enabled
Wakeup time from Wakeup clock MSI = 4 MHz 34.3 39.2

tWUSTBY Range 1
Standby to Run mode Wakeup clock MSI = 8 MHz 22.4 25.6
µs
Wakeup time from
tWUSHUTD Range 1 Wakeup clock MSI = 4 MHz 264 316
Shutdown to Run mode
1. Guaranteed by characterization results (VDD = 3 V, T = 25 °C).
2. Wakeup time is equivalent when code is executed from SRAM1 compared to Flash memory. It is also equivalent when
going to Range 2 rather than Range 1.
94/145 DS13105 Rev 8

Table 55. Regulator modes transition times(1)

Transition time from LPRun to Run

tWULPRUN Code run with MSI = 2 MHz 19.6 -
mode(2)
Regulator transition time from Range 2 to
21.9 32.2 µs
Range 1(3)
tVOST Code run with HSI16
Regulator transition time from Range 1 to
23.1 33.9
Range 2(3)
1. Guaranteed by characterization results (VDD = 3 V, T = 25 °C).
2. Time until REGLPF flag is cleared in PWR_SR2.
3. Time until VOSF flag is cleared in PWR_SR2.
5.3.9 External clock source characteristics

High-speed external user clock generated from an external source
The high-speed external (HSE32) clock can be supplied with a 32 MHz crystal oscillator or
by a TCXO (temperature controlled crystal oscillator).
Crystal oscillator
The devices include internal programmable capacitances that can be used to tune the
crystal frequency in order to compensate the PCB parasitic one.
Characteristics in the tables below, are measured over recommended operating conditions,
unless otherwise specified. Typical values are referred to TA = 25 °C and VDD = 3 V.
Table 56. HSE32 crystal requirements(1)

fnom Oscillator frequency - - 32 - MHz

Initial - - ±10
fTOL Frequency accuracy Over temperature (-20 to 70 °C) - - ±10 ppm
Aging over 10 years - - ±10
CLoad Load capacitance(2) - 9.5 10 10.5
pF
CShunt Crystal shunt capacitance - 0.3 0.6 2
Cmotion Crystal motional capacitance - 1.3 1.89 2.5 fF
Crystal equivalent series
ESR - - 30 60 Ω
resistance
PD Drive level - - - 100 µW
1. 32 MHz XTAL is specified for two specific references: NX2016SA and NX1612SA.
2. Load capacitance can be managed by internal programmable capacitances at calibration phase. No need to add external
foot capacitances. The values indicated take into account the combination of the two foot capacitances.
DS13105 Rev 8 95/145

133
Table 57. HSE32 oscillator characteristics

VDDRF stabilized,
Startup time for 80% amplitude
tSUA(HSE) SUBGHZ_HSEINTRIMR = 0x12, - 1000 -
stabilization
-40 to +105 °C temperature range
µs
VDDRF stabilized,
Startup time
tSUR(HSE) SUBGHZ_HSEINTRIMR = 0x12, - 180 -
for HSEREADY signal
-40 to +105 °C temperature range
HSEGMC = 000,
IDDRF(HSE) HSE32 current consumption - 50 - µA
SUBGHZ_HSEINTRIMR = 0x12
SUBGHZ_HSEINTRIMR
XOTg(HSE) - 1 5
granularity
ppm
SUBGHZ_HSEINTRIMR
XOTfp(HSE) ±15 ±30 -
frequency pulling
Capacitor bank
SUBGHZ_HSEINTRIMR
XOTnb(HSE) - 6 - bit
number of tuning bits
SUBGHZ_HSEINTRIMR setting
XOTst(HSE) - - 0.1 ms
time
For more information about the trimming methodology of the oscillator, refer to the
application note HSE trimming for STM32 wireless MCUs (AN5042).
TCXO regulator
Table 58. HSE32 TCXO regulator characteristics

Regulated voltage range for

VTCXO VDDOP > VTCXO + 200 mV 1.6 1.7 3.3 V
TCXO voltage supply
ILTCXO Load current for TCXO regulator - - 1.5 4 mA
From enable to regulated voltage
TSVTCXO Startup time for TCXO regulator - - 50 µs
within 25 mV from target
Current consumption for TCXO Quiescent current - - 70 µA

IDDTCXO
regulator Relative to load current - 1.6 2 %
Provided through a 220 Ω resistor
Amplitude voltage for external
ATCXO in series with a capacitance 0.4 0.6 1.2 Vpk-pk
TCXO applied to OSC_IN pin
(voltage divider)(1)
1. In order to minimize spurious injection, the capacitance value must be calculated such that an amplitude of
0.4 to 0.5 Vpk-pk on OSC_IN is obtained. For TCXO output voltage of 0.8 Vpk-pk, 10 pF can be used.
Low-speed external user clock generated from an external source

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator
oscillator. The information provided in this section is based on design simulation results
obtained with typical external components specified in the table below. In the application,
96/145 DS13105 Rev 8

the resonator and the load capacitors have to be placed as close as possible to the
oscillator pins to minimize output distortion and startup stabilization time.
Refer to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).
Table 59. Low-speed external user clock characteristics(1)

LSEDRV[1:0] = 00 - Low drive capability - 250 -
LSE current LSEDRV[1:0] = 01 - Medium-low drive capability - 315 -

IDD(LSE) nA
consumption LSEDRV[1:0] = 10 - Medium-high drive capability - 500 -
LSEDRV[1:0] = 11 - High drive capability - 630 -
LSEDRV[1:0] = 00 - Low drive capability - - 0.50
Maximum LSEDRV[1:0] = 01 - Medium-low drive capability - - 0.75
Gmcritmax critical crystal µA/V
gm LSEDRV[1:0] = 10 - Medium-high drive capability - - 1.70
LSEDRV[1:0] = 11 - High drive capability - - 2.70
tSU(LSE) (2)
Startup time VDD stabilized - 2 - s
2. tSU(LSE) is the startup time measured from the moment it is enabled (by software) until a stable 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer.
For more information on the crystal selection, refer to application note Oscillator design
guide for STM8AF/AL/S, STM32 MCUs and MPUs (AN2867).
Figure 16. Typical application with a 32.768 kHz crystal
Resonator with integrated

capacitors
CL1
OSC32_IN fLSE
32.768 kHz Drive

resonator programmable
amplifier
OSC32_OUT
CL2
MS30253V2
Note: No external resistors are required between OSC32_IN and OSC32_OUT, and it is forbidden
to add one.
In bypass mode, the LSE oscillator is switched off and the input pin is a standard GPIO.
DS13105 Rev 8 97/145

133
The external clock signal has to respect the I/O characteristics detailed in Section 5.3.16:
I/O port characteristics.The recommend clock input waveform is shown in the figure below.
Figure 17. Low-speed external clock source AC timing diagram
tw(LSEH)
VLSEH
90%
10%
VLSEL
tr(LSE) t
tf(LSE) tw(LSEL)
TLSE
MS19215V2
Table 60. Low-speed external user clock characteristics(1) – Bypass mode

User external clock source

fLSE_ext - 21.2 32.768 44.4 kHz
frequency
OSC32_IN input pin high- 0.7 x
VLSEH - - VDDx
level voltage VDDx
V
OSC32_IN input pin low-
VLSEL - VSS - 0.3 x VDDx
level voltage
tw(LSEH)
OSC32_IN high or low time - 250 - - ns
tw(LSEL)
Includes initial accuracy,
ftolLSE Frequency tolerance stability over temperature, –500 - +500 ppm
aging and frequency pulling
5.3.10 Internal clock source characteristics

Parameters given in the table below are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 25: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI16) RC oscillator
Table 61. HSI16 oscillator characteristics(1)

fHSI16 HSI16 frequency VDD = 3.0 V, TA = 30 °C 15.88 - 16.08 MHz
98/145 DS13105 Rev 8

Table 61. HSI16 oscillator characteristics(1) (continued)

Trimming code is not a

0.2 0.3 0.4
multiple of 48
TRIM HSI16 user trimming step
Trimming code is a
–4 –6 –8
multiple of 48
DuCy(HSI16) %
(2) Duty cycle - 45 - 55
Tj = 0 to 85 °C –1 - 1
∆Temp(HSI16) HSI16 oscillator frequency drift
Tj = -40 to 125 °C –2 - 1.5
∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD = 1.8 V to 3.6 V –0.1 - 0.05
tsu (HSI16)(2) HSI16 oscillator start-up time - - 0.8 1.2
μs
tstab(HSI16)(2) HSI16 oscillator stabilization time - - 3 5
IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA
1. Guaranteed by characterization results.
Figure 18. HSI16 frequency versus temperature

MHz
16.4
+2 %
16.3
+1.5 %
16.2
+1 %
16.1
16
15.9
15.8 -1 %
-1.5 %
15.7
-2 %
15.6
-40 -20 0 20 40 60 80 100 120 °C
Mean Min Max MSv66006V3
DS13105 Rev 8 99/145

133
Multi-speed internal (MSI) RC oscillator
Table 62. MSI oscillator characteristics(1)

Range 0 98.7 100 101.3

Range 1 197.4 200 202.6
kHz
Range 2 394.8 400 405.2
Range 3 789.6 800 810.4
Range 4 0.987 1 1.013
Range 5 1.974 2 2.026
MSI mode
Range 6 3.948 4 4.052
Range 7 7.896 8 8.104
MHz
Range 8 15.79 16 16.21
Range 9 23.69 24 24.31
MSI frequency Range 10 31.58 32 32.42

after factory Range 11 47.38 48 48.62
fMSI calibration, done
at VDD= 3 V and Range 0 - 98.304 -
TA= 30 °C Range 1 - 196.608 -
kHz
Range 2 - 393.216 -
Range 3 - 786.432 -
Range 4 - 1.016 -
PLL mode Range 5 - 1.999 -
XTAL=
32.768 kHz Range 6 - 3.998 -
Range 7 - 7.995 -
MHz
Range 8 - 15.991 -
Range 9 - 23.986 -
Range 10 - 32.014 -
Range 11 - 48.005 -
MSI oscillator Tj = 0 to 85 °C –3.5 - 3
∆TEMP(MSI)(2) frequency drift MSI mode %
over temperature Tj = -40 to 125 °C –8 - 6
100/145 DS13105 Rev 8

Table 62. MSI oscillator characteristics(1) (continued)

VDD =
–1.2 -
1.8 to 3.6 V
Range 0 to 3 0.5
VDD =
–0.5 -
2.4 to 3.6 V
MSI oscillator VDD =

–2.5 -
frequency drift 1.8 to 3.6 V
∆VDD(MSI)(2) MSI mode Range 4 to 7 0.7
over VDD VDD =
(reference is 3 V) –0.8 -
2.4 to 3.6 V %
VDD =
–5 -
1.8 to 3.6 V
Range 8 to 11 1
VDD =
–1.6 -
2.4 to 3.6 V
Frequency Tj = -40 to 85 °C - 1 2
∆FSAMPLING
variation in MSI mode
(MSI)(2)(4) Tj = -40 to 125 °C - 2 4
sampling mode(3)
RMS cycle-to-
CC jitter(MSI)(4) PLL mode Range 11 - - 60 -
cycle jitter ps
P jitter(MSI)(4) RMS period jitter PLL mode Range 11 - - 50 -
Range 0 - - 10 20
Range 1 - - 5 10
MSI oscillator Range 2 - - 4 8

tSU(MSI)(4) μs
start-up time Range 3 - - 3 7
Range 4 to 7 - - 3 6
Range 8 to 11 - - 2.5 6
10 % of final
- - 0.25 0.5
frequency
MSI oscillator PLL mode 5 % of final
tSTAB(MSI)(4) - - 0.5 1.25 ms
stabilization time Range 11 frequency
1 % of final
- - - 2.5
frequency
DS13105 Rev 8 101/145

133
Table 62. MSI oscillator characteristics(1) (continued)

Range 0 - - 0.6 1
Range 1 - - 0.8 1.2
Range 2 - - 1.2 1.7
Range 3 - - 1.9 2.5
Range 4 - - 4.7 6
MSI oscillator Range 5 - - 6.5 9
MSI and
IDD(MSI)(4) power µA
PLL mode Range 6 - - 11 15
consumption
Range 7 - - 18.5 25
Range 8 - - 62 80
Range 9 - - 85 110
Range 10 - - 110 130
Range 11 - - 155 190
2. This is a deviation for an individual part once the initial frequency has been measured.
3. Sampling mode means LPRun and LPSleep modes with temperature sensor disabled.
102/145 DS13105 Rev 8

Figure 19. Typical current consumption vs. MSI frequency
Low-speed internal (LSI) RC oscillator
Table 63. LSI oscillator characteristics(1)

VDD = 3 V, TA = 30 °C 31.04 - 32.96

fLSI LSI frequency kHz
VDD = 1.8 to 3.6 V, Tj = -40 to 125 °C 29.5 - 34
tSU(LSI)(2) LSI oscillator startup time - - 80 130
μs
(2)
tSTAB(LSI) LSI oscillator stabilization time 5 % of final frequency - 125 180
LSI oscillator power
IDD(LSI)(2) - - 110 180 nA
consumption
DS13105 Rev 8 103/145

133
5.3.11 PLL characteristics

Parameters given in the table below are derived from tests performed under temperature
and VDD supply voltage conditions summarized in Table 25: General operating conditions.
Table 64. PLL characteristics(1)

PLL input clock(2) - 2.66 - 16 MHz

fPLL_IN
PLL input clock duty cycle - 45 - 55 %
Voltage scaling Range 1 3 - 48
fPLL_P_OUT PLL multiplier output clock P
fPLL_Q_OUT PLL multiplier output clock Q
MHz
fPLL_R_OUT PLL multiplier output clock R
fVCO_OUT PLL VCO output
tLOCK PLL lock time - - 15 40 μs
RMS cycle-to-cycle jitter - 40 -
Jitter System clock 48 MHz ps
RMS period jitter - 30 -
VCO freq = 96 MHz - 200 260
PLL power consumption on
IDD(PLL) VCO freq = 192 MHz - 300 380 μA
VDD(1)
VCO freq = 344 MHz - 520 650
2. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between the two PLLs.
5.3.12 Flash memory characteristics
Table 65. Flash memory characteristics(1)

tprog 64-bit programming time - 81.7 90.8 µs

Normal
5.2 5.5
tprog_row One row (64 double-words) programming time programming
Fast programming 3.8 4.0
Normal
41.8 43.0 ms
tprog_page One 2-Kbyte page programming time programming
Fast programming 30.4 31.0
tERASE 2-Kbyte page erase time - 22.0 24.5
tME Mass erase time - 22.1 25.0
104/145 DS13105 Rev 8

Table 65. Flash memory characteristics(1) (continued)

Write mode 3.4 -

Average consumption from VDD
Erase mode 3.4 -
IDD mA
Write mode 7 (for 6 µs) -
Maximum current (peak)
Erase mode 7 (for 67 µs) -
Table 66. Flash memory endurance and data retention

Symbol Parameter Conditions Min(1) Unit
NEND Endurance TA = -40 to +105 °C 10 kcycles

1 kcycle(2) at TA = 85 °C 30
(2)
1 kcycle at TA = 105 °C 15
tRET Data retention 10 kcycles(2) at TA = 55 °C 30 Years
(2)
10 kcycles at TA = 85 °C 15
10 kcycles(2) at TA = 105 °C 10
2. Cycling performed over the whole temperature range.
5.3.13 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling two LEDs through I/O ports).
the device is stressed by the following electromagnetic events until a failure occurs (failure
indicated by the LEDs):
• ESD (electrostatic discharge, positive and negative) applied to all device pins until a
functional disturbance occurs (test compliant with IEC 61000-4-2 standard)
• FTB (burst of fast transient voltage, positive and negative) applied to VDD and VSS
pins, through a 100 pF capacitor, until a functional disturbance occurs (test compliant
with IEC 61000-4-4 standard)
A device reset allows normal operations to be resumed.
The test results given in the table below, are based on the EMS levels and classes defined
in application note EMC design guide for STM8, STM32 and Legacy MCUs (AN1709).
DS13105 Rev 8 105/145

133
Table 67. EMS characteristics

Symbol Parameter Conditions Level/Class
Voltage limits to be applied on any I/O pin to VDD = 3.3 V, TA = +25 °C, fHCLK = 48 MHz,
VFESD 2B
induce a functional disturbance conforming to IEC 61000-4-2
Fast transient voltage burst limits to be
VDD = 3.3 V, TA = +25 °C, fHCLK = 48 MHz,
VEFTB applied through 100 pF on VDD and VSS 5A
conforming to IEC 61000-4-4
pins to induce a functional disturbance
Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software.
Note: Good EMC performance is highly dependent on the user application and the software in
particular.It is then recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for the application.
Software recommendations
The software flow must include the management of runaway conditions such as:
• corrupted program counter
• unexpected reset
• critical data corruption (control registers)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the oscillator pins for 1 s.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring. For more details, refer to the application note
Software techniques for improving microcontrollers EMC performance (AN1015).
Electromagnetic interference (EMI)

The electromagnetic field emitted by the device is monitored while a simple application is
executed (toggling two LEDs through the I/O ports). This emission test is compliant with the
IEC 61967-2 standard, that specifies the test board and the pin loading.
106/145 DS13105 Rev 8

Table 68. EMI characteristics

Peripheral ON
SMPS OFF
Monitored fHSE = /fCPUM4, fCPUM0]
Symbol Parameter Conditions Unit
frequency band
fHSE = 32 MHz
fCPU = 48 MHz
0.1 MHz to 30 MHz 1
VDD = 3.6 V, TA = 25 °C, 30 MHz to 130 MHz 4

dBµV
SEMI Peak level UFBGA73 package 130 MHz to 1 GHz 0
compliant with IEC 61967-2 1 GHz to 2 GHz 7
EMI level 2 -
5.3.14 Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 s) are applied to
the pins of each sample according to each pin combination. The sample size depends on
the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to
the ANSI/JEDEC standard.
Table 69. ESD absolute maximum ratings

Symbol Ratings Conditions Class Maximum value(1) Unit
Electrostatic discharge voltage TA = +25 °C, conforming to

VESD(HBM) 2 2000
(human body model) ANSI/ESDA/JEDEC JS-001
V
Electrostatic discharge voltage TA = +25 °C, conforming to
VESD(CDM) C2a 500
(charge device model) ANSI/ESD STM5.3.1 JS-002
Static latch-up
The following complementary static tests are required on three parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin.
• A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 70. Electrical sensitivities

Symbol Parameter Conditions Class
LU Static latch-up class TA = +105 °C conforming to JESD78A Level A
DS13105 Rev 8 107/145

133
5.3.15 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3V-capable I/O pins), must be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
case abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating-input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out-of-range parameter: ADC error above a certain limit
(higher than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent
pins (out of the -5 µA/0 µA range) or other functional failure (for example reset occurrence
or oscillator frequency deviation).
The characterization results are given in the table below.
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.
Table 71. I/O current injection susceptibility(1)

Functional susceptibility
Symbol Description Unit
Negative Positive
injection injection
Injected current on all pins except PB0 –5 N/A(2)

IINJ mA
Injected current on PB0 pin –5 0
2. Injection not possible.
108/145 DS13105 Rev 8

5.3.16 I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the conditions summarized in Table 25: General operating conditions. All
I/Os are designed as CMOS- and TTL-compliant.
Table 72. I/O static characteristics

(1)
I/O input low-level voltage - - 0.3 x VDD
VIL 0.39 x VDD
I/O input low-level voltage(2)
- 0.06
V
I/O input high-level voltage(1) 0.7 x VDD - -
1.8 V < VDD < 3.6 V
VIH 0.49 x VDD
I/O input high-level voltage(2) - -
+ 0.26
TT, FT_xx and NRST I/O
Vhys - 200 - mV
input hysteresis
0 ≤ VIN ≤ Max(VDDXXX)(3)(4) - - ±100
Max(VDDXXX) ≤ VIN ≤
- - 650
FT_xx input leakage current Max(VDDXXX) +1 V(2)(3)(4)
Ilkg Max(VDDXXX) +1 V < VIN ≤ nA
- - 200(7)
5.5 V(2)(3)(4)(5)(6)
VIN ≤ Max(VDDXXX)(3) - - ±150
TT input leakage current
Max(VDDXXX) ≤ VIN < 3.6 V(3) - - 2000
Weak pull-up equivalent
RPU VIN = VSS 25 40 55
resistor(1)
kΩ
Weak pull-down equivalent
RPD VIN = VDD 25 40 55
resistor(1)
CIO I/O pin capacitance - - 5 - pF
1. Tested in production.
2. Guaranteed by design, not tested in production.
3. Represents the pad leakage of the I/O itself. The total product pad leakage is given by
ITotal_Ileak_max = 10 μA + number of I/Os where VIN is applied on the pad x Ilkg(Max).
4. Max(VDDXXX) is the maximum value among all the I/O supplies.
5. VIN must be lower than [Max(VDDXXX) + 3.6 V].
6. Refer to the figure below.
7. To sustain a voltage higher than [Min(VDD, VDDA) + 0.3 V], the internal pull-up and pull-down resistors must be disabled on
all FT_xx I/O.
DS13105 Rev 8 109/145

133
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters, as shown
in the figure below.
Figure 20. I/O input characteristics - VIL and VIH on all I/Os
VIH spec 70 % VIL spec 30 % VIH rule VIL rule VIH spec TTL VIL spec TTL
MSv64346V1
Output driving current

The GPIOs can sink or source up to ±8 mA, and sink or source up to ± 20 mA (with a
relaxed VOL/VOH).
In the user application, the number of I/O pins that can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2: Absolute maximum ratings.
The sum of the currents sourced by all the I/Os on VDD, plus the maximum consumption of
the MCU sourced on VDD, cannot exceed the absolute maximum rating ΣIVDD (see
Table 21: Voltage characteristics).
The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of the
MCU sunk on VSS, cannot exceed the absolute maximum rating ΣIVSS (see Table 21:
Voltage characteristics).
Output voltage levels

performed under the ambient temperature and supply voltage conditions summarized in
Table 25: General operating conditions. All I/Os are CMOS- and TTL-compliant (FT or TT
unless otherwise specified).
110/145 DS13105 Rev 8

Table 73. Output voltage characteristics(1)

VOL(2) Output low-level voltage for an I/O pin CMOS port(3) - 0.4
VOH(2) Output high-level voltage for an I/O pin IO| = 8 mA, VDD ≥ 2.7 V
|I VDD - 0.4 -
VOL(2) Output low-level voltage for an I/O pin TTL port(3) - 0.4
VOH(2) Output high-level voltage for an I/O pin |IIO| = 8 mA, VDD ≥ 2.7 V 2.4 -
VOL(2) Output low-level voltage for an I/O pin - 1.3
|IIO| = 20 mA, VDD ≥ 2.7 V V
VOH(2) Output high-level voltage for an I/O pin VDD - 1.3 -
VOL(2) Output low-level voltage for an I/O pin - 0.4
|IIO| = 4 mA, VDD ≥ 1.8 V
VOH(2) Output high-level voltage for an I/O pin VDD - 0.45 -
Output low-level voltage for an FT I/O |IIO| = 20 mA, VDD ≥ 2.7 V - 0.4
VOLFM+(2) pin in FM+ mode
(FT I/O with “f” option) |IIO| = 10 mA, VDD ≥ 1.8 V - 0.4
1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 21:
Voltage characteristics. The sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always
respect the absolute maximum ratings Σ IIO.
3. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
Input/output AC characteristics
Table 74. I/O AC characteristics(1)(2)

OSPEEDx[1:0](3) Symbol Parameter Conditions Min Max Unit
C = 50 pF, 2.7 V ≤ VDD ≤ 3.6 V - 5
Maximum C = 50 pF, 1.8 V ≤ VDD ≤ 2.7 V - 1

Fmax MHz
frequency C = 10 pF, 2.7 V ≤ VDD ≤ 3.6 V - 10
C = 10 pF, 1.8 V ≤ VDD ≤ 2.7 V - 1.5
0b00
C = 50 pF, 2.7 V ≤ VDD ≤ 3.6 V - 25
Output rise and C = 50 pF, 1.8 V ≤ VDD ≤ 2.7 V - 52

Tr/Tf ns
fall time C = 10 pF, 2.7 V ≤ VDD ≤ 3.6 V - 17
C = 10 pF, 1.8 V ≤ VDD ≤ 2.7 V - 37
DS13105 Rev 8 111/145

133
Table 74. I/O AC characteristics(1)(2) (continued)

OSPEEDx[1:0](3) Symbol Parameter Conditions Min Max Unit
C = 50 pF, 2.7 V ≤ VDD ≤ 3.6 V - 25

Fmax MHz
frequency C = 10 pF, 2.7 V ≤ VDD ≤ 3.6 V - 50
C = 10 pF, 1.8 V ≤ VDD ≤ 2.7 V - 15
0b01
C = 50 pF, 2.7 V ≤ VDD ≤ 3.6 V - 9

Tr/Tf ns
fall time C = 10 pF, 2.7 V ≤ VDD ≤ 3.6 V - 4.5
C = 10 pF, 1.8 V ≤ VDD ≤ 2.7 V - 9
C = 50 pF, 2.7 V ≤ VDD ≤ 3.6 V - 50

Fmax MHz
frequency C = 10 pF, 2.7 V ≤ VDD ≤ 3.6 V - 100(4)
C = 10 pF, 1.8 V ≤ VDD ≤ 2.7 V - 37.5
0b10
C = 50 pF, 2.7 V ≤ VDD ≤ 3.6 V - 5.8

Tr/Tf ns
C = 10 pF, 1.8 V ≤ VDD ≤ 2.7 V - 5
C = 30 pF, 2.7 V ≤ VDD ≤ 3.6 V - 120(4)

Fmax MHz
frequency C = 10 pF, 2.7 V ≤ VDD ≤ 3.6 V - 180(4)
C = 10 pF, 1.8 V ≤ VDD ≤ 2.7 V - 75(4)
0b11
C = 30 pF, 2.7 V ≤ VDD ≤ 3.6 V - 3.3

Tr/Tf ns
C = 10 pF, 1.8 V ≤ VDD ≤ 2.7 V - 3.3
1. The maximum frequency is defined with (Tr+ Tf) ≤ 2/3 T, and duty cycle comprised between 45 and 55 %.
2. The fall and rise time are defined, respectively, between 90 and 10 %, and between 10 and 90 % of the output waveform.
3. OSPEED0[1:0] in GPIOA_OSPEEDR, GPIOB_OSPEEDR and GPIOC_OSPEEDR. OSPEED3[1:0] in GPIOH_OSPEEDR
4. This value represents the I/O capability but the maximum system frequency is limited to 48 MHz.
5.3.17 NRST pin characteristics

The NRST pin input driver uses the CMOS technology. It is connected to a permanent
pull-up resistor, RPU.
112/145 DS13105 Rev 8

Table 75. NRST pin characteristics(1)

VIL(NRST) NRST input low level voltage - - - 0.3 x VDD

V
VIH(NRST) NRST input high level voltage - 0.7 x VDD - -
Vhys(NRST) NRST Schmitt trigger voltage hysteresis - - 200 - mV
RPU Weak pull-up equivalent resistor(2) VIN = VSS 25 40 55 kΩ
VF(NRST) NRST input, filtered pulse - - - 70
ns
VNF(NRST) NRST input, not filtered pulse 1.8 V ≤ VDD ≤ 3.6 V 350 - -
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance is minimal (~10 %).
Figure 21. Recommended NRST pin protection
External
reset circuit(1) VDD
RPU
NRST(2) Internal reset
Filter
0.1 μF
MS19878V3
1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in the above table.
Otherwise the reset is not be taken into account by the device.
3. The external capacitor on NRST must be placed as close as possible to the device.
5.3.18 Analog switches booster
Table 76. Analog switches booster characteristics(1)

Symbol Parameter Min Typ Max Unit
VDD Supply voltage 1.8 - 3.6 V

tSU(BOOST) Booster startup time - - 240 µs
Booster consumption for 1.8 V ≤ VDD ≤ 2.0 V - - 250
IDD(BOOST) Booster consumption for 2.0 V ≤ VDD ≤ 2.7 V - - 500 µA
Booster consumption for 2.7 V ≤ VDD ≤ 3.6 V - - 900
DS13105 Rev 8 113/145

133
5.3.19 Analog-to-digital converter characteristics

Unless otherwise specified, the parameters given in the table below are preliminary values
derived from tests performed under ambient temperature, fPCLK frequency and VDDA supply
voltage conditions summarized in Table 25: General operating conditions.
Note: It is recommended to perform a calibration after each power-up.
Table 77. ADC characteristics(1)

VDDA Analog supply voltage - 1.62 - 3.6
Positive reference VDDA ≥ 2 V 2 - VDDA V

VREF+
voltage VDDA < 2 V VDDA
Range 1 0.14 - 35
fADC ADC clock frequency MHz
Range 2 0.14 - 16
12 bits, VDDA > 2 V - - 2.50
10 bits, VDDA > 2 V - - 2.92
8 bits, VDDA > 2 V - - 3.50
6 bits, VDDA > 2 V - - 4.38
fs Sampling rate Msps
12 bits, VDDA ≤ 2 V - - 2.18
10 bits, VDDA ≤ 2 V - - 2.50
8 bits, VDDA ≤ 2 V - - 2.92
6 bits, VDDA ≤ 2 V - - 3.50
fADC = 35 MHz,
- - 2.35
12 bits, VDDA > 2 V
External trigger fADC = 35 MHz,

fTRIG - - 2.18 MHz
frequency 12 bits, VDDA ≤ 2 V
12 bits, VDDA > 2 V - - fADC/15
12 bits, VDDA ≤ 2 V - - fADC/17
Conversion voltage
VAIN - VSS - VREF+ V
range
External input
RAIN - - - 50 kΩ
impedance
Internal sample and
CADC - - 5 - pF
hold capacitor
Conversion
tSTAB ADC power-up time - 2
cycle
fADC = 35 MHz 2.35 µs
tCAL Calibration time
- 82 1/fADC
114/145 DS13105 Rev 8

Table 77. ADC characteristics(1) (continued)

CKMODE = 00 2 - 3 1/fADC
Trigger conversion CKMODE = 01 6.5

tLATR
latency CKMODE = 10 12.5 1/fPCLK
CKMODE = 11 3.5
fADC = 35 MHz 0.043 - 4.59 µs
ts Sampling time
- 1.5 - 160.5 1/fADC
ADC voltage regulator
tADCVREG_STUP start-up time - - - 20 µs
fADC = 35 MHz
0.40 - 4.95 µs
Total conversion time Resolution = 12 bits
tCONV (including sampling ts + 12.5 cycles for successive
time) Resolution = 12 bits approximation 1/fADC
= 14 to 173
Laps of time allowed

tIDLE
between two - - - µs
100
conversions without
rearm
fs = 2.5 Msps - 410 -
ADC consumption
IDDA(ADC) fs = 1 Msps - 164 - µA
from VDDA
fs = 10 ksps - 17 -
fs = 2.5 Msps - 65 -
ADC consumption
IDDV(ADC) from VREF+ fs = 1 Msps - 26 - µA
single ended mode
fs = 10 ksps - 0.26 -
1. Guaranteed by design
2. I/O analog switch voltage booster must be enabled (BOOSTEN = 1 in the SYSCFG_CFGR1) when VDDA < 2.4 V and
disabled when VDDA ≥ 2.4 V.
Table 78. Maximum ADC RAIN values

Resolution Sampling cycle at 35 MHz (ns) Sampling time at 35 MHz (ns) Max. RAIN(1)(2)(Ω)
1.5(3) 43 50
3.5 100 680
7.5 214 2200
12.5 357 4700
12 bits
19.5 557 8200
39.5 1129 15000
79.5 2271 33000
160.5 4586 50000
DS13105 Rev 8 115/145

133
Table 78. Maximum ADC RAIN values (continued)

Resolution Sampling cycle at 35 MHz (ns) Sampling time at 35 MHz (ns) Max. RAIN(1)(2)(Ω)
1.5(3) 43 68
3.5 100 820
7.5 214 3300
12.5 357 5600
10 bits
19.5 557 10000
39.5 1129 22000
79.5 2271 39000
160.5 4586 50000
(3)
1.5 43 82
3.5 100 1500
7.5 214 3900
12.5 357 6800
8 bits
19.5 557 12000
39.5 1129 27000
79.5 2271 50000
160.5 4586 50000
(3)
1.5 43 390
3.5 100 2200
7.5 214 5600
12.5 357 10000
6 bits
19.5 557 15000
39.5 1129 33000
79.5 2271 50000
160.5 4586 50000
2. I/O analog switch voltage booster must be enabled (BOOSTEN = 1 in the SYSCFG_CFGR1) when VDDA < 2.4 V and
disabled when VDDA ≥ 2.4 V.
3. Only allowed with VDDA > 2 V
Table 79. ADC accuracy(1)(2)(3)

VDDA = VREF+ = 3 V, fADC = 35 MHz, fs ≤ 2.5 Msps, TA = 25 °C - 3 4

2 V < VDDA, VREF+ < 3.6 V,
Total - 3 6.5
fADC = 35 MHz; fs ≤ 2.5 Msps, TA = entire range
ET unadjusted LSB
error 1.62 V < VDDA = VREF+ < 3.6 V, TA = entire range
Range 1: fADC = 35 MHz, fs ≤ 2.2 Msps - 3 7.5
Range 2: fADC = 16 MHz, fs ≤ 1.1 Msps
116/145 DS13105 Rev 8

Table 79. ADC accuracy(1)(2)(3) (continued)

VDDA = VREF+ = 3 V, fADC = 35 MHz, fs ≤ 2.5 Msps, TA = 25 °C - 1.5 2

2 V < VDDA, VREF+ < 3.6 V,
- 1.5 4.5
fADC = 35 MHz; fs ≤ 2.5 Msps, TA = entire range
EO Offset error LSB
1.62 V < VDDA = VREF+ < 3.6 V, TA = entire range
Range 1: fADC = 35 MHz, fs ≤ 2.2 Msps - 1.5 5.5
VDDA = VREF+ = 3 V, fADC = 35 MHz, fs ≤ 2.5 Msps, TA = 25 °C - 3 3.5
2 V < VDDA, VREF+ < 3.6 V,
- 3 5
fADC = 35 MHz, fs ≤ 2.5 Msps, TA = entire range
EG Gain error LSB
Range 1: fADC = 35 MHz, fs ≤ 2.2 Msps - 3 6.5
VDDA = VREF+ = 3 V, fADC = 35 MHz, fs ≤ 2.5 Msps, TA = 25 °C - 1.2 1.5
2 V < VDDA, VREF+ < 3.6 V,
- 1.2 1.5
Differential fADC = 35 MHz, fs ≤ 2.5 Msps, TA = entire range
ED LSB
linearity error
1.62 V < VDDA = VREF+ < 3.6 V,TA = entire range
VDDA = VREF+ = 3 V, fADC = 35 MHz, fs ≤ 2.5 Msps, TA = 25 °C - 2.5 3
2 V < VDDA, VREF+ < 3.6 V,
- 2.5 3
Integral fADC = 35 MHz, fs ≤ 2.5 Msps, TA = entire range
EL LSB
linearity error
VDDA = VREF+ = 3 V, fADC = 35 MHz, fs ≤ 2.5 Msps, TA = 25 °C 10.1 10.2 -
2 V < VDDA, VREF+ < 3.6 V,
Effective 9.6 10.2 -
ENOB number of bit
bits 1.62 V < VDDA = VREF+ < 3.6 V, TA = entire range
Range 1: fADC = 35 MHz, fs ≤ 2.2 Msps 9.5 10.2 -
VDDA = VREF+ = 3 V, fADC = 35 MHz, fs ≤ 2.5 Msps, TA = 25 °C 62.5 63 -
Signal-to- 2 V < VDDA, VREF+ < 3.6 V,
59.5 63 -
noise and fADC = 35 MHz, fs ≤ 2.5 Msps, TA = entire range
SINAD dB
distortion
ratio
Range 1: fADC = 35 MHz, fs ≤ 2.2 Msps 59 63 -
VDDA = VREF+ = 3 V, fADC = 35 MHz, fs ≤ 2.5 Msps, TA = 25 °C 63 64 -
2 V < VDDA, VREF+ < 3.6 V,
60 64 -
Signal-to- fADC = 35 MHz, fs ≤ 2.5 Msps, TA = entire range
SNR dB
noise ratio
Range 1: fADC = 35 MHz, fs ≤ 2.2 Msps 60 64 -
DS13105 Rev 8 117/145

133
Table 79. ADC accuracy(1)(2)(3) (continued)

VDDA = VREF+ = 3 V, fADC = 35 MHz, fs ≤ 2.5 Msps, TA = 25 °C - -74 -73

2 V < VDDA, VREF+ < 3.6 V,
Total - -74 -70
THD harmonic dB
distortion 1.62 V < VDDA = VREF+ < 3.6 V, TA = entire range
Range 1: fADC = 35 MHz, fs ≤ 2.2 Msps - -74 -70
1. Based on characterization results, not tested in production.
2. ADC DC accuracy values are measured after internal calibration.
3. Injecting negative current on any analog input pin significantly reduces the accuracy of A-to-D conversion of signal on
another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins susceptible to receive
negative current.
4. I/O analog switch voltage booster enabled (BOOSTEN = 1 in the SYSCFG_CFGR1) when VDDA < 2.4 V and disabled when
VDDA ≥ 2.4 V.
Figure 22. ADC accuracy characteristics
EG
Code
(1) Example of an actual transfer curve
4095
(2) Ideal transfer curve
4094
(3) End point correlation line
4093
ET total unadjusted error: maximum deviation
(2)
between the actual and ideal transfer curves.
ET (3) EO offset error: maximum deviation between the

7 first actual transition and the first ideal one.
(1)
6 EG gain error: deviation between the last ideal
transition and the last actual one.
5
EO EL
4 ED differential linearity error: maximum deviation
between actual steps and the ideal ones.
3 ED
EL integral linearity error: maximum deviation between
2 any actual transition and the end point correlation line.
1 LSB ideal
1
0
1 2 3 4 5 6 7 4093 4094 4095 (VAIN / VREF+)*4095
MSv19880V3
118/145 DS13105 Rev 8

Figure 23. Typical connection diagram using the ADC
VDDA
VT Sample and hold ADC converter
RAIN(1) AINx RADC

12-bit
converter
Cparasitic(2) VT Ilkg (3) CADC
VAIN
MS33900V5
1. Refer to Table 79: ADC accuracy for the values of RAIN, RADC and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance
(refer to Table 72: I/O static characteristics for the value of the pad capacitance). A high Cparasitic value downgrades the
conversion accuracy. To remedy this, fADC must be reduced.
3. Refer to Table 72: I/O static characteristics for the values of Ilkg.
General PCB design guidelines

Power supply decoupling must be performed as shown in Figure 13: Power supply scheme.
The 100 nF capacitor must be ceramic (good quality) and must be placed as close as
possible to the chip.
5.3.20 Temperature sensor characteristics
Table 80. TS characteristics

TL(1) VTS linearity with temperature - ±1 ±2 °C

Avg_Slope(2) Average slope 2.3 2.5 2.7 mV/°C
V30 Voltage at 30 °C (±5 °C)(3) 0.742 0.76 0.785 V
tSTART
Sensor buffer startup time in continuous mode(4) - 8 15 µs
(TS_BUF)(1)
tSTART(1) Startup time when entering in continuous mode(4) - 70 120 µs
tS_temp(1) ADC sampling time when reading the temperature 5 - - µs
Temperature sensor consumption from VDD, when

IDD(TS)(1) - 4.7 7 µA
selected by the ADC
3. Measured at VDDA = 3.3 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer to
Table 12: Temperature sensor calibration values.
4. Continuous mode means Run and Sleep modes, or temperature sensor enable in LPRun and LPSleep modes.
DS13105 Rev 8 119/145

133
5.3.21 VBAT monitoring characteristics
Table 81. VBAT monitoring characteristics(1)

R Resistor bridge for VBAT(2) - 3 * 39 - kΩ

Q Ratio on VBAT measurement - 3 - -
(3)
Er Error on Q -10 - 10 %
(3)
tS_vbat ADC sampling time when reading VBAT 12 - - µs
1. 1.55 V < VBAT < 3.6 V.
2. VDD on STM32WLE5/4UxYx devices.
Table 82. VBAT charging characteristics

VBRS = 0 - 5 -
RBC Battery charging resistor kΩ
VBRS = 1 - 1.5 -
5.3.22 Voltage reference buffer characteristics
Table 83. VREFBUF characteristics(1)

VRS = 0 2.4 - 3.6

Normal mode
Analog supply VRS = 1 2.8 - 3.6
VDDA
voltage VRS = 0 1.62 - 2.4
Degraded mode(2)
VRS = 1 1.62 - 2.8
Normal mode VRS = 0 2.044 2.048 2.052
ILOAD=100 μA, V
TJ = 30 °C VRS = 1 2.495 2.5 2.505
VREFBUF_ Voltage Normal mode VRS = 0 2.030 2.048 2.057

OUT reference output ILOAD=100 μA,
-40 °C < TJ < 125 °C VRS = 1 2.478 2.500 2.509
VRS = 0 VDDA - 250 mV - VDDA

Degraded mode(2)
VRS = 1 VDDA - 250 mV - VDDA
Trim step
TRIM - - - ±0.05 ±0.1 %
resolution
CL Load capacitor - - 0.5 1 1.5 µF
Equivalent
esr series resistor - - - - 2 Ω
of Cload
Static load
Iload - - - - 4 mA
current
120/145 DS13105 Rev 8

Table 83. VREFBUF characteristics(1) (continued)

Normal ppm
Iline_reg Line regulation 2.8 V ≤ VDDA ≤ 3.6 V - - 2000
mode /V
Normal ppm
Iload_reg Load regulation 500 μA ≤ Iload ≤ 4 mA - 50 500
mode /mA
±[Tcoeff _ vrefint
-40 °C < TJ < +105 °C - -
Temperature + 50] ppm
Tcoeff
coefficient ±[T /°C
0 °C < TJ < +50 °C - - coeff_vrefint
+ 50]
Power supply DC 40 55 -
PSRR dB
rejection 100 kHz 25 40 -
CL = 0.5 µF(3) - 300 350
(3)
tSTART Startup time CL = 1.1 µF - 500 650 µs
CL = 1.5 µF(3) - 650 800
Control of
maximum DC
current drive on
IINRUSH - - - 8 - mA
VREFBUF_OUT
during start-up
phase (4)
Iload = 0 µA - 16 25
VREFBUF
IDDA
consumption Iload = 500 µA - 18 30 µA
(VREFBUF)
from VDDA
Iload = 4 mA - 35 50
1. Guaranteed by design or characterization. Not tested in production.
2. In degraded mode, VREFBUF cannot maintain accurately the output voltage that follows (VDDA - drop voltage).
3. The capacitive load must include a 100 nF capacitor in order to cut-off the high-frequency noise.
4. To correctly control the VREFBUF in-rush current during start-up phase and scaling change, the VDDA voltage must be in
the range [2.4 V to 3.6 V] and [2.8 V to 3.6 V] respectively for VRS = 0 and VRS = 1.
Figure 24. VREFOUT_TEMP when VRS = 0

V
2.06
Max
2.055
2.05
2.045
Mean
2.04
2.035
Min
2.03
2.025
-40 -20 0 20 40 60 80 100 120 °C
MSv62522V2
DS13105 Rev 8 121/145

133
Figure 25. VREFOUT_TEMP when VRS = 1

V
2.51
Max
2.505
2.5
2.495
Mean
2.49
2.485
2.48
Min
2.475
-40 -20 0 20 40 60 80 100 120 °C
MSv62523V2
5.3.23 Digital-to-analog converter characteristics
Table 84. DAC characteristics(1)

DAC output buffer OFF, DAC_OUT

pin not connected (internal 1.71 -
Analog supply voltage for
VDDA connection only) 3.6 V
DAC ON
Other modes 1.80 -
DAC output buffer OFF, DAC_OUT

pin not connected (internal 1.71 -
VREF+ Positive reference voltage connection only) VDDA V
Other modes 1.80 -
DAC output Connected to VSS 5 - -

RL Resistive load
buffer ON Connected to VDDA 25 - -
RO Output impedance DAC output buffer OFF 9.6 11.7 13.8
Output impedance sample- VDD = 2.7 V - - 2
kΩ
RBON and-hold mode, output
buffer ON VDD = 2.0 V - - 3.5
Output impedance sample VDD = 2.7 V - - 16.5

RBOFF and hold mode, output
buffer OFF VDD = 2.0 V - - 18.0
CL DAC output buffer ON - - 50 pF

Capacitive load
CSH Sample-and-hold mode - 0.1 1 µF
VREF+
Voltage on DAC_OUT DAC output buffer ON 0.2 -
VDAC_OUT - 0.2 V
output
DAC output buffer OFF 0 - VREF+
122/145 DS13105 Rev 8

Table 84. DAC characteristics(1) (continued)

±0.5 LSB - 1.7 3

Settling time (full scale: for Normal mode
±1 LSB - 1.6 2.9
a 12-bit code transition DAC output
between the lowest and the buffer ON ±2 LSB - 1.55 2.85
tSETTLING highest input codes, when CL ≤ 50 pF ±4 LSB - 1.48 2.8 µs
DAC_OUT reaches final RL ≥ 5 kΩ
value ±0.5 LSB, ±1 LSB, ±8 LSB - 1.4 2.75
±2 LSB, ±4 LSB, ±8 LSB) Normal mode DAC output buffer
- 2 2.5
OFF, ±1LSB, CL = 10 pF
Wakeup time from off state Normal mode DAC output buffer ON
- 4.2 7.5
tWAKEUP (setting the ENx bit in the CL ≤ 50 pF, RL ≥ 5 kΩ
(2) µs
DAC control register) until Normal mode DAC output buffer
final value ±1 LSB - 2 5
OFF, CL ≤ 10 pF
Normal mode DAC output buffer ON
PSRR VDDA supply rejection ratio - -80 -28 dB
CL ≤ 50 pF, RL ≥ 5 kΩ, DC
Minimum time between two DAC_MCR:MODEx[2:0] = 000 or 001
1 - -
consecutive writes into the CL ≤ 50 pF, RL ≥ 5 kΩ
DAC_DORx register to
TW_to_W guarantee a correct µs
DAC_OUT for a small DAC_MCR:MODEx[2:0] = 010 or 011
1.4 - -
variation of the input code CL ≤ 10 pF
(1 LSB)
DAC output buffer
- 0.7 3.5
Sampling time in sample DAC_OUT pin ON, CSH = 100 nF
ms
and hold mode (code connected DAC output buffer
- 10.5 18
transition between the OFF, CSH = 100 nF
tSAMP lowest input code and the
DAC_OUT pin
highest input code when
not connected
DACOUT reaches final DAC output buffer
(internal - 2 3.5 µs
value ±1LSB) OFF
connection
only)
Sample and hold mode,
Ileak Output leakage current - - -(3) nA
DAC_OUT pin connected
Internal sample and hold
CIint - 5.2 7 8.8 pF
capacitor
tTRIM Middle code offset trim time DAC output buffer ON 50 - - µs
Middle code offset for 1 trim VREF+ = 3.6 V - 1500 -

Voffset µV
code step VREF+ = 1.8 V - 750 -
DS13105 Rev 8 123/145

133
Table 84. DAC characteristics(1) (continued)

No load, middle
- 315 500
DAC output code (0x800)
buffer ON No load, worst code
- 450 670
(0xF1C)
DAC consumption from
IDDA(DAC) DAC output No load, middle µA
VDDA - - 0.2
buffer OFF code (0x800)
315 x 670 x
Sample and hold mode, CSH =
- Ton/(Ton Ton/(Ton
100 nF
+Toff)(4) +Toff)(4)
No load, middle
- 185 240
DAC output code (0x800)
buffer ON No load, worst code
- 340 400
(0xF1C)
DAC output No load, middle
- 155 205
DAC consumption from buffer OFF code (0x800)
IDDV(DAC) µA
VREF+
185 x 400 x
Sample and hold mode, buffer ON,
- Ton/(Ton Ton/(Ton
CSH = 100 nF, worst case
+Toff)(4) +Toff)(4)
155 x 205 x
Sample and hold mode, buffer OFF,
- Ton/(Ton Ton/(Ton
CSH = 100 nF, worst case
+Toff)(4) +Toff)(4)
2. In buffered mode, the output can overshoot above the final value for low input code (starting from min value).
3. Refer to Table 72: I/O static characteristics.
4. Ton is the Refresh phase duration. Toff is the Hold phase duration. Refer to the reference manual for more details.
Figure 26. 12-bit buffered/non-buffered DAC

Buffered/non-buffered DAC
Buffer(1)
RLOAD
12-bit DAC_OUTx
digital-to-analog
converter
CLOAD
(1) The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads
directly without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in
the DAC_CR register. MSv47959V2
124/145 DS13105 Rev 8

Table 85. DAC accuracy(1)

.
Differential non DAC output buffer ON - - ±2

DNL
linearity (2) DAC output buffer OFF - - ±2
- Monotonicity 10 bits Guaranteed
DAC output buffer ON, CL ≤ 50 pF, RL ≥ 5 kΩ - - ±4

(3)
INL Integral non linearity
DAC output buffer OFF, CL ≤ 50 pF, no RL - - ±4
VREF+ = 3.6 V - - ±12

DAC output buffer ON LSB
Offset error at code CL ≤ 50 pF, RL ≥ 5 kΩ
Offset
0x800(3) VREF+ = 1.8 V - - ±25
DAC output buffer OFF, CL ≤ 50 pF, no RL - - ±8

Offset error at code
Offset1 DAC output buffer OFF, CL ≤ 50 pF, no RL - - ±5
0x001(4)
VREF+ = 3.6 V - - ±5
Offset Error at code DAC output buffer ON
OffsetCal
0x800 after calibration CL ≤ 50 pF, RL ≥ 5 kΩ
VREF+ = 1.8 V - - ±7
DAC output buffer ON, CL ≤ 50 pF, RL ≥ 5 kΩ - - ±0.5

Gain Gain error(5) %
DAC output buffer OFF, CL ≤ 50 pF, no RL - - ±0.5
DAC output buffer ON, CL ≤ 50 pF, RL ≥ 5 kΩ - - ±30

TUE Total unadjusted error LSB
DAC output buffer OFF, CL ≤ 50 pF no RL - - ±12
Total unadjusted error
TUECal DAC output buffer ON, CL ≤ 50 pF, RL ≥ 5 kΩ - - ±23 LSB
after calibration
DAC output buffer ON, CL ≤ 50 pF, RL ≥ 5 kΩ,
- 71.2 -
1 kHz, BW 500 kHz
SNR Signal-to-noise ratio dB
DAC output buffer OFF, CL ≤ 50 pF, no RL,
- 71.6 -
1 kHz, BW 500 kHz
- -78 -
Total harmonic 1 kHz
THD dB
distortion DAC output buffer OFF, CL ≤ 50 pF, no RL,
- -79 -
1 kHz
- 70.4 -
Signal-to-noise and 1 kHz
SINAD dB
distortion ratio DAC output buffer OFF, CL ≤ 50 pF, no RL,
- 71 -
1 kHz
DS13105 Rev 8 125/145

133
Table 85. DAC accuracy(1) (continued)


- 11.4 -
Effective number of 1 kHz
ENOB bits
bits DAC output buffer OFF, CL ≤ 50 pF, no RL,
- 11.5 -
1 kHz
2. Difference between two consecutive codes - 1 LSB.
3. Difference between measured value at code i and the value at code i on a line drawn between code 0 and last code 4095.
4. Difference between the value measured at code (0x001) and the ideal value.
5. Difference between the ideal slope of the transfer function and the measured slope computed from code 0x000 and 0xFFF
when buffer is OFF, and from code giving 0.2 V and (VREF+ – 0.2) V when buffer is ON.
5.3.24 Comparator characteristics
Table 86. COMP characteristics(1)

VDDA Analog supply voltage - 1.62 - 3.6

Comparator
VIN - 0 - VDDA V
input voltage range
VBG(2) Scaler input voltage - VREFINT
VSC Scaler offset voltage - - ±5 ±10 mV
Scaler static consumption BRG_EN = 0 (bridge disabled) - 200 300 nA

IDDA(SCALER)
from VDDA BRG_EN = 1 (bridge enabled) - 0.8 1 µA
tSTART_SCALER Scaler startup time - - 100 200 µs
High-speed VDDA ≥ 2.7 V - - 5

mode VDDA < 2.7 V - - 7
Comparator startup time
tSTART to reach propagation VDDA ≥ 2.7 V - - 15 µs
delay specification Medium mode
VDDA < 2.7 V - - 25
Ultra-low-power mode - - 40
High-speed VDDA ≥ 2.7 V - 55 80

ns
mode VDDA < 2.7 V - 55 100
(3) Propagation delay with
tD
100 mV overdrive Medium mode - 0.55 0.9
µs
Ultra-low-power mode - 4 7
Voffset Comparator offset error Full common mode range - ±5 ±20 mV
No hysteresis - 0 -
Low hysteresis - 8 -
Vhys Comparator hysteresis mV
Medium hysteresis - 15 -
High hysteresis - 27 -
126/145 DS13105 Rev 8

Table 86. COMP characteristics(1) (continued)

Static - 400 600

Ultra-low-
With 50 kHz ±100 mV nA
power mode - 1200 -
overdrive square signal
Static - 5 7
Comparator consumption Medium
IDDA(COMP) With 50 kHz ±100 mV
from VDDA mode - 6 -
µA
Static - 70 100
High-speed
mode With 50 kHz ±100 mV
- 75 -
1. Guaranteed by design, unless otherwise specified.
2. Refer to Table 35: Embedded internal voltage reference.
5.3.25 Timers characteristics

Parameters given in the following tables are guaranteed by design. Refer to Section 5.3.16:
I/O port characteristics for details on the input/output alternate function characteristics
(output compare, input capture, external clock, PWM output).
Table 87. TIMx(1) characteristics

- 1 - tTIMxCLK
tres(TIM) Timer resolution time
fTIMxCLK = 48 MHz 15.625 - ns
Timer external clock frequency - 0 fTIMxCLK/2

fEXT MHz
on CH1 to CH4 fTIMxCLK = 48 MHz 0 40
TIM1, TIM16, TIM17 - 16
ResTIM Timer resolution bit
TIM2 - 32
- 1 65536 tTIMxCLK
tCOUNTER 16-bit counter clock period
fTIMxCLK = 48 MHz 0.015625 1024 µs
Maximum possible count with - - 65536 × 65536 tTIMxCLK

tMAX_COUNT
32-bit counter fTIMxCLK = 48 MHz - 67.10 s
1. TIMx, is used as a general term where x stands for 1, 2, 16 or 17.
DS13105 Rev 8 127/145

133
Table 88. IWDG min/max timeout period at 32 kHz (LSI)(1)

Prescaler divider PR[2:0] bits Min timeout (RL[11:0] = 0x000) Max timeout (RL[11:0] = 0xFFF) Unit
/4 0x0 0.125 512

/8 0x1 0.250 1024
/16 0x2 0.500 2048
/32 0x3 1.0 4096 ms
/64 0x4 2.0 8192
/128 0x5 4.0 16384
/256 0x6 or 0x7 8.0 32768
1. The exact timings still depend on the phasing of the APB interface clock versus the LSI clock, hence there is always a full
RC period of uncertainty.
5.3.26 Communication interfaces characteristics

I2C interface characteristics
The I2C interface meets the timings requirements of the I2C-bus specification and user
manual rev. 03 for:
• Standard-mode (Sm): bitrate up to 100 Kbit/s
• Fast-mode (Fm): bitrate up to 400 Kbit/s
• Fast-mode Plus (Fm+): bitrate up to 1 Mbit/s
The I2C timings requirements are guaranteed by design when the I2C peripheral is properly
configured (refer to the reference manual) and when the II2CCLK frequency is greater than
the minimum shown in the table below.
Table 89. Minimum I2CCLK frequency in all I2C modes

Symbol Parameter Conditions Min Unit
Standard-mode - 2
Analog filter ON, DNF = 0 8
Fast-mode
f(I2CCLK) I2CCLK frequency Analog filter OFF, DNF = 1 9 MHz
Analog filter ON, DNF = 0 18
Fast-mode Plus
Analog filter OFF, DNF = 1 16
The SDA and SCL I/O requirements are met with the following restrictions:
• The SDA and SCL I/O pins are not “true” open-drain. When configured as open-drain,
the PMOS connected between the I/O pin and VDD is disabled, but is still present.
• The 20 mA output drive requirement in Fast-mode Plus is partially supported. This
limits the maximum load Cload supported in Fast-mode Plus, given by these formulas:
– tr(SDA/SCL) = 0.8473 x Rp x Cload
– Rp(min) = [VDD - VOL(max)] / IOL(max)
where Rp is the I2C lines pull-up. Refer to Section 5.3.16: I/O port characteristics
for more details.
128/145 DS13105 Rev 8

All I2C SDA and SCL I/Os embed an analog filter (refer to the table below for its
characteristics).
Table 90. I2C analog filter characteristics(1)

Symbol Parameter Min Max Unit
(2) (3)
tAF Maximum pulse width of spikes that are suppressed by the analog filter 50 100 ns
1. Guaranteed by characterization.
2. Spikes with widths below tAF(min) filtered.
3. Spikes with widths above tAF(max) not filtered.
USART characteristics
performed under the ambient temperature, fPCLKx frequency and supply voltage conditions
summarized in Table 25: General operating conditions, with the following configuration:
• OSPEEDRy[1:0] set to 10 (output speed)
• capacitive load C = 30 pF
• measurement points at CMOS levels: 0.5 x VDD
Refer to Section 5.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, CK, TX, and RX for USART).
Table 91. USART characteristics

Master mode - - 6
fCK USART clock frequency MHz
Slave mode - - 16
tsu(NSS) NSS setup time Slave mode tker + 5 - -
th(NSS) NSS hold time Slave mode 2 - -
tw(CKH) CK high time
Master mode 1 / fCK / 2 - 1 1 / fCK / 2 1 / fCK / 2 + 1
tw(CKL) CK low time
Master mode 22 - -
tsu(RX) Data input setup time
Slave mode 3 - -
ns
Master mode 0 - -
th(RX) Data input hold time
Slave mode 1 - -
Master mode - 13 22
tv(TX) Data output valid time
Slave mode - 0.5 1
Master mode 10 - -
th(TX) Data output hold time
Slave mode 0 - -
DS13105 Rev 8 129/145

133
SPI characteristics
• output speed set to OSPEEDRy[1:0] = 11
• measurements done at CMOS levels: 0.5 x VDD
Refer to Section 5.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI).
Table 92. SPI characteristics(1)

Master mode
24
1.8 < VDD < 3.6 V, Range 1
Master transmitter mode
24
1.8 < VDD < 3.6 V, Range 1
fSCK Slave receiver mode
SPI clock frequency - - 24 MHz
1/tc(SCK) 1.8 < VDD < 3.6 V, Range 1
Slave mode transmitter/full duplex
24(2)
2.7 < VDD < 3.6 V, Range 1
Slave mode transmitter/full duplex
24(2)
1.8 < VDD < 3.6 V, Range 1
tsu(NSS) NSS setup time Slave mode, SPI prescaler = 2 3 x TPCLK - -
th(NSS) NSS hold time Slave mode, SPI prescaler = 2 2 x TPCLK - -
-
tw(SCKH)
SCK high and low time Master mode TPCLK - 1 TPCLK TPCLK + 1
tw(SCKL)
tsu(MI) Master mode 1 - -
Data input setup time
tsu(SI) Slave mode 1 - -
th(MI) Master mode 6 - -
Data input hold time ns
th(SI) Slave mode 2 - -
ta(SO) Data output access time 9 12 34
Slave mode
tdis(SO) Data output disable time 9 10 16
130/145 DS13105 Rev 8

Table 92. SPI characteristics(1) (continued)

Slave mode, 2.7 < VDD < 3.6 V

- 10 13.5
Range 1
- 17 18
Range 2
tv(SO)
Data output valid time Slave mode, 1.8 < VDD < 3.6 V
- 10 20
Range 1
ns
- 17 24
Range 2
tv(MO) Master mode (after enable edge) - 1 1.5
th(SO) Slave mode (after enable edge) 8 - -
Data output hold time
th(MO) Master mode (after enable edge) 0 - -
2. Maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI), that has to fit into SCK low or
high phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a master
having tsu(MI) = 0 while Duty(SCK) = 50 %.
Figure 27. SPI timing diagram - Slave mode and CPHA = 0
NSS input
SCK input
MISO MSB OUT BIT6 OUT LSB OUT

OUTPUT
(SI)
MOSI
MSB IN BIT1 IN LSB IN
INPUT
(SI)
DS13105 Rev 8 131/145

133
Figure 28. SPI timing diagram - Slave mode and CPHA = 1
NSS input
tSU(NSS) tc(SCK) th(NSS)

SCK input
CPHA=1
CPOL=0 tw(SCKH)
CPHA=1 tw(SCKL)
CPOL=1
tr(SCK)
tv(SO) th(SO) tdis(SO)
ta(SO) tf(SCK)
MISO
MSB OUT BIT6 OUT LSB OUT
OUTPUT
tsu(SI) th(SI)
MOSI
INPUT MSB IN BIT 1 IN LSB IN
ai14135b
1. Measurement points are set at CMOS levels: 0.3 VDD and 0.7 VDD.
Figure 29. SPI timing diagram - Master mode
High
NSS input
tc(SCK)
SCK Output
CPHA= 0
CPOL=0
CPHA= 0
CPOL=1
SCK Output
CPHA=1
CPOL=0
CPHA=1
CPOL=1
tw(SCKH) tr(SCK)
tsu(MI) tw(SCKL) tf(SCK)
MISO
INP UT MSB IN BIT6 IN LSB IN
th(MI)
MOSI
MSB OUT B I T1 OUT LSB OUT
OUTPUT
tv(MO) th(MO)
ai14136c
1. Measurement points are set at CMOS levels: 0.3 VDD and 0.7 VDD.
132/145 DS13105 Rev 8

JTAG/SWD characteristics
• measurement done at CMOS levels: 0.5 x VDD.
Refer to Section 5.3.16: I/O port characteristics for more details.
Table 93. Dynamic JTAG characteristics

fPP 2.7 V < VDD < 3.6 V - - 33

TCK clock frequency MHz
1/tc(TCK) 1.8 V < VDD < 3.6 V - - 25
tisu(TMS) TMS input setup time - 0.5 - -
tih(TMS) TMS input hold time - 1 - -
tisu(TDI) TDI input setup time - 1 - -
tih(TDI) TDI input hold time - 2.5 - - ns
2.7 V < VDD < 3.6 V - 12 15
tov(TDO) TDO output valid time
1.8 V< VDD < 3.6 V - 12 20
toh(TDO) TDO output hold time - 10 - -
Table 94. Dynamic SWD characteristics

fPP 2.7 V < VDD < 3.6 V - - 58

SWCLK clock frequency MHz
1/tc(SWCLK) 1.8 < VDD < 3.6 V - - 41
tisu(SWDIO) SWDIO input setup time - 1 - -
tih(SWDIO) SWDIO input hold time - 2 - -
2.7 V < VDD < 3.6 V - 15 17 ns
tov(SWDIO) SWDIO output valid time
1.8 V < VDD < 3.6 V - 15 24
toh(SWDIO) SWDIO output hold time - 9 - -
DS13105 Rev 8 133/145

133
Package information STM32WLE5/E4xx
6 Package information
In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at www.st.com. ECOPACK
is an ST trademark.
6.1 UFQFPN48 package information

This UFQFPN is a 48 leads, 7x7 mm, 0.5 mm pitch, ultra thin fine pitch quad flat package.
Figure 30. UFQFPN48 - Outline

Pin 1 identifier
laser marking area
D
A
E E
T Seating
plane
ddd A1
e b
Detail Y
D
Y
Exposed pad
area D2
1
L
48
C 0.500x45°
pin1 corner R 0.125 typ.
E2 Detail Z
48
Z
A0B9_ME_V3
1. Drawing is not to scale.

2. All leads/pads should also be soldered to the PCB to improve the lead/pad solder joint life.
3. There is an exposed die pad on the underside of the UFQFPN package. It is recommended to connect and
solder this back-side pad to PCB ground.
134/145 DS13105 Rev 8

STM32WLE5/E4xx Package information
Table 95. UFQFPN48 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max
A 0.500 0.550 0.600 0.0197 0.0217 0.0236

A1 0.000 0.020 0.050 0.0000 0.0008 0.0020
D 6.900 7.000 7.100 0.2717 0.2756 0.2795
E 6.900 7.000 7.100 0.2717 0.2756 0.2795
D2 5.500 5.600 5.700 0.2165 0.2205 0.2244
E2 5.500 5.600 5.700 0.2165 0.2205 0.2244
L 0.300 0.400 0.500 0.0118 0.0157 0.0197
T - 0.152 - - 0.0060 -
b 0.200 0.250 0.300 0.0079 0.0098 0.0118
e - 0.500 - - 0.0197 -
ddd - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Figure 31. UFQFPN48 - Recommended footprint
7.30
6.20
48 37
1 36
0.20 5.60
7.30
5.80
6.20
5.60
0.30
12 25
13 24
0.50 0.75
0.55
5.80
A0B9_FP_V2
1. Dimensions are expressed in millimeters.
DS13105 Rev 8 135/145

140
Device marking for UFQFPN48

The following figure gives an example of topside marking versus pin 1 position identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are
not indicated below.
Figure 32. UFQFPN48 marking example (package top view)
STM32WLE5
Product identification(1)
CCU6
Y WW Date code
R
Pin 1 identifier Revision code
MSv66046V1
1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not approved for use in production. ST is not responsible for any consequences
resulting from such use. In no event will ST be liable for the customer using any of these engineering
samples in production. ST’s Quality department must be contacted prior to any decision to use these
engineering samples to run a qualification activity.
136/145 DS13105 Rev 8

6.2 WLCSP59 package information

For more information on this package, contact the local STMicroelectronics sales office.
6.3 UFBGA73 package information

This UFBGA is a 73 balls, 5 × 5 mm, ultra thin fine pitch ball grid array package.
Figure 33. UFBGA73 - Outline

SEATING PLANE
C
ddd C
A4 A2
SIDE VIEW A1 A
E
B
E1
e F A
F
J
H
G
F
E D1 D
D
C
B
e
A
1 2 3 4 5 6 7 8 9
A1 INDEX CORNER AREA b (73 BALLS)
BOTTOM VIEW
eee M C A B
fff M C
B08E_UFBGA73_ME_V1
1. Drawing is not to scale.

2. - The terminal A1 corner must be identified on the top surface by using a corner chamfer, ink or metalized
markings, or other feature of package body or integral heat slug.
- A distinguishing feature is allowable on the bottom surface of the package to identify the terminal A1
corner. Exact shape of each corner is optional.
Table 96. UFBGA73 - Mechanical data
Symbol
A(2) - - 0.60 - - 0.236

A1 - - 0.11 - - 0.0043
DS13105 Rev 8 137/145

140
Table 96. UFBGA73 - Mechanical data (continued)

Symbol
A2 - 0.13 - - 0.0051 -
A4 - 0.32 - - 0.0126 -
b(3) 0.24 0.29 0.34 0.0094 0.0114 0.0134
D 4.85 5.00 5.15 0.1909 0.1969 0.2028
D1 - 4.00 - - 0.1575 -
E 4.85 5.00 5.15 0.1909 0.1969 0.2028
E1 - 4.00 - - 0.1575 -
e - 0.50 - - 0.0197 -
F - 0.50 - - 0.0197 -
ddd - - 0.08 - - 0.0031
(4)
eee - - 0.15 - - 0.0059
(5)
fff - - 0.05 - - 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. - UFBGA stands for Ultra-Thin Profile Fine Pitch Ball Grid Array.
- Ultra Thin profile: 0.50 < A ≤ 0.65mm / Fine pitch: e < 1.00mm pitch.
- The total profile height (Dim A) is measured from the seating plane to the top of the component
- The maximum total package height is calculated by the following methodology:
A Max = A1 Typ + A2 Typ + A4 Typ + √ (A1²+A2²+A4² tolerance values)
3. The typical balls diameters before mounting is 0.20 mm.
4. The tolerance of position that controls the location of the pattern of balls with respect to datum A and B. For
each ball there is a cylindrical tolerance zone eee perpendicular to datum C and located on true position
with respect to datum A and B as defined by e. The axis perpendicular to datum C of each ball must lie
within this tolerance zone.
5. The tolerance of position that controls the location of the balls within the matrix with respect to each other.
For each ball there is a cylindrical tolerance zone fff perpendicular to datum C and located on true position
as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone. Each
tolerance zone fff in the array is contained entirely in the respective zone eee above. The axis of each ball
must lie simultaneously in both tolerance zones.
Figure 34. UFBGA73 - Recommended footprint
Dpad
Dsm
MSv62396V1
138/145 DS13105 Rev 8

Table 97. UFBGA recommended PCB design rules (0.5 mm pitch BGA)
Dimension Recommended values
Pitch 0.5 mm
Dpad 0.230 mm
0.330 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.280 mm
Stencil thickness Between 0.100 mm and 0.125 mm
Pad trace width 0.100 mm
Ball diameter 0.280 mm
Device marking for UFBGA73

The following figure gives an example of topside marking versus pin 1 position identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are
not indicated below.
Figure 35. UFBGA73 marking example (package top view)
Product identification(1) WLE5J8I6

Date code
Y WW R Revision code
Pin 1 identifier
MSv64357V1
1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not approved for use in production. ST is not responsible for any consequences
resulting from such use. In no event will ST be liable for the customer using any of these engineering
samples in production. ST’s Quality department must be contacted prior to any decision to use these
engineering samples to run a qualification activity.
DS13105 Rev 8 139/145

140
6.4 Package thermal characteristics

The maximum chip junction temperature (TJ max) must never exceed the values given in
The maximum chip-junction temperature, TJ max (in °C), can be calculated using the
equation:
TJ max = TA max + (PD max x ΘJA)
where:
• TA max is the maximum ambient temperature in °C.
• ΘJA is the package junction-to-ambient thermal resistance, in °C/W.
• PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/O max).
• PINT max is the product of IDD and VDD, expressed in Watt. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins:
PI/O max = Σ (VOL × IOL) + Σ ((VDD – VOH) × IOH)
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.
When the SMPS is used, a portion of the power consumption is dissipated into the external
inductor, therefore reducing the device power dissipation. This portion depends mainly on
the inductor ESR characteristics.
As the radiated RF power is quite low (< 4 mW), it is not necessary to remove it from the
device power consumption.
RF characteristics (such as sensitivity, Tx power consumption) are provided up to 85 °C.
Table 98. Package thermal characteristics

Symbol Parameter Value Unit
Thermal resistance junction-ambient

UFBGA73 - 5 x 5 mm 20.1
ΘJA
UFQFPN48 - 7 x 7 mm 27.4
WLCSP59 TBD
Thermal resistance junction-board
UFBGA73 - 5 x 5 mm 20.2
ΘJB °C/W
UFQFPN48 - 7 x 7 mm 11.7
WLCSP59 TBD
Thermal resistance junction-top case
UFBGA73 - 5 x 5 mm 31.1
ΘJC
UFQFPN48 - 7 x 7 mm 8.5
WLCSP59 TBD
140/145 DS13105 Rev 8

STM32WLE5/E4xx Ordering information
7 Ordering information
Example: STM32 WL E5 J C I 6 TR
Device family
STM32 = Arm based 32-bit microcontroller
Product type
WL = wireless long range
Device subfamily
E5 = Cortex-M4, full set of modulations

E4 = Cortex-M4, full set of modulations except LoRa
Pin/ball count
C = 48
U= 59
J = 73
Flash memory size

8 = 64 Kbytes
B = 128 Kbytes
C = 256 Kbytes
Package
I = UFBGA
U= UFQFPN
Y= WLCSP
Temperature range
6 = -40 to 85 °C (105 °C junction)

7 = -40 to 105 °C (125 °C junction)
Packing
TR = tape and reel
xxx = programmed parts
For a list of available options (such as speed or package) or for further information on any
aspect of this device, contact the nearest ST sales office.
DS13105 Rev 8 141/145

141
Revision history STM32WLE5/E4xx
8 Revision history
Table 99. Document revision history

Date Revision Changes
20-Dec-2019 1 Initial release.

8-Jan-2020 2 Updated Ultra-low-power platform features.
Updated:
– TJ in Table 2: Main features and peripheral counts and in the whole doc
– Section 3.9.1: Power supply schemes
– Table 12: Temperature sensor calibration values
– Table 13: Internal voltage reference calibration values
– Ff renamed RF in Table 18: Legend/abbreviations used in the pinout table and
Table 19: STM32WLE5J8/JB/JC pin definition
– new RF AF in Table 20: Alternate functions
– Section 5.1.2: Typical values
– Figure 12: Current consumption measurement scheme
– Table 21: Voltage characteristics
– Table 23: Thermal characteristics
25-Feb-2020 3
– Table 25: General operating conditions
– Section 5.3.3: Sub-GHz radio characteristics
– Table 34: Embedded internal voltage reference
– Table 57: MSI oscillator characteristics
– Table 58: LSI oscillator characteristics
– Table 67: I/O static characteristics
– Table 68: Output voltage characteristics
– Table 69: I/O AC characteristics
– Table 72: ADC characteristics
– Table 75: TS characteristics
– Table 76: VBAT monitoring characteristics
Removed table LSI2 oscillator.
Updated:
27-Feb-2020 4 – Features
– Table 24: Main performances at VDD = 3 V
142/145 DS13105 Rev 8

STM32WLE5/E4xx Revision history
Table 99. Document revision history (continued)

Updated:
– Radio in Features
– Section 3.8.3: Transmitter
– Table 13: Internal voltage reference calibration values
– F6 I/O structure and footnotes in Table 19: STM32WLE5xx pin definition
– Figure 11: Power supply scheme
– IVDD(PIN) in Table 22: Current characteristics
– New Table 26: Operating range of RF pads
– PA match in Table 27: Sub-GHz radio power consumption
– EFFSMPS in Table 32: Sub-GHz radio power management specifications
29-Jun-2020 5
– IDD(Run) in Table 36
– New Table 43, Table 45, Table 47 and Table 49
– New footnote in Table 56: HSE32 crystal requirements
– Note 2 in Table 59: Low-speed external user clock characteristics
– ∆Temp(HSI16) in Table 61: HSI16 oscillator characteristics
– Tj replacing TA in Table 62 and Table 63
– Ilkg in Table 72: I/O static characteristics
– Table 73: Output voltage characteristics
– Table 77: ADC characteristics
– Table 79: ADC accuracy
Updated:
– Package list in the cover page
– Table 1: Device summary
– Table 2: Main features and peripheral counts
– New Figure 8: UFQFPN48 pinout and Figure 9: WLCSP59 pinout
– Figure 10: UFBGA73 pinout
8-Jul-2020 6 – Figure 13: Power supply scheme
– Table 19: STM32WLE5/E4xx pin definition
– Table 20: Alternate functions
– Table 70: ESD absolute maximum ratings
– Table 93: SPI characteristics
– Section 7: Ordering information
DS13105 Rev 8 143/145

144
Revision history STM32WLE5/E4xx
Table 99. Document revision history (continued)

Updated:
– Table 1 with STM32WLE4xx products (without LoRa) and -40/+105 °C
– Table 2: Main features and peripheral counts
– Figure 9: UFBGA73 pinout (formatting only)
– Table 19: STM32WLE5/E4xx pin definition and Table 20: Alternate functions
– TJ in Table 23: Thermal characteristics
– IINJ(PIN) in Table 22: Current characteristics
– Table 25: General operating conditions
– Table 27: Sub-GHz radio power consumption
– Table 28: Sub-GHz radio power consumption in transmit mode
5-Oct-2020 7
– Figure 14: VREFINT versus temperature
– all TBD and values at 105 °C in Table 36 to Table 55
– Table 56: HSE32 crystal requirements
– Figure 17: HSI16 frequency versus temperature
– Table 71: I/O current injection susceptibility
– Footnote of Table 72: I/O static characteristics
– Table 83: VREFBUF characteristics
– new Figure 23 and Figure 24
– Table 98: Package thermal characteristics
– Section 7: Ordering information
Updated:
– Features
– New logos in Section 1: Introduction
– Section 3.6: Security management
– New Figure 5: Power-up/power-down sequence
– New Section 3.13: Hardware semaphore (HSEM)
– New Section 3.17: Cyclic redundancy check (CRC)
9-Nov-2020 8 – Table 9: MCU and sub-GHz radio operating modes
– Section 3.18.3: VBAT battery voltage monitoring
– Figure 13: Power supply scheme
– Table 28: Sub-GHz radio power consumption in transmit mode
– Table 44: Current consumption in Stop 1 mode
– Table 53: Peripheral current consumption
– tWUSTOP1 in Table 54: Low-power mode wakeup timings
144/145 DS13105 Rev 8

STM32WLE5/E4xx
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgment.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other
product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
DS13105 Rev 8 145/145

145

STM32WLE5CCU6

Uploaded by

Copyright:

Available Formats

STM32WLE5CCU6

Uploaded by

Document Information

Original Description:

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

STM32WLE5CCU6

Uploaded by

Copyright:

Available Formats

STM32WLE5xx STM32WLE4xx

Multiprotocol LPWAN 32-bit Arm® Cortex®-M4 MCUs, LoRa®,

November 2020 DS13105 Rev 8 1/145

• 32 kHz oscillator for RTC with calibration Controllers

• 12-bit ADC 2.5 Msps, up to 16 bits with • 1x window watchdog

STM32WLE5C8, STM32WLE5CB, STM32WLE5CC

2/145 DS13105 Rev 8

DS13105 Rev 8 3/145

3.16 Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

4 Pinouts, pin description and alternate functions . . . . . . . . . . . . . . . . . 49

4/145 DS13105 Rev 8

5.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134

DS13105 Rev 8 5/145

6.2 WLCSP59 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137

7 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141

8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142

6/145 DS13105 Rev 8

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

DS13105 Rev 8 7/145

Table 45. Current consumption during wakeup from Stop 1 mode . . . . . . . . . . . . . . . . . . . . . . . . . . 86

8/145 DS13105 Rev 8

DS13105 Rev 8 9/145

Figure 1. STM32WLE5/E4xx block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

10/145 DS13105 Rev 8

This document provides information on the STM32WLE5/E4xx microcontrollers.

The STM32WLE5/E4xx long-range wireless and ultra-low-power devices embed a powerful

DS13105 Rev 8 11/145

Table 2. Main features and peripheral counts

CPU Arm Cortex-M4

12/145 DS13105 Rev 8

Table 2. Main features and peripheral counts (continued)

SPI/I2S 2 (1 supporting I2S)

DS13105 Rev 8 13/145

Figure 1. STM32WLE5/E4xx block diagram

Flash interface arbiter

DMA2 (7 channels) HSEM SPI1

DMAMUX RNG SPI2S2

GPIO ports A,B,C,H AES I2C1

CRC PKA I2C2

DAC (12 bits) I2C3

LPTIM3 USART2 TIM17

14/145 DS13105 Rev 8

3.2 Arm Cortex-M core

3.3 Adaptive real-time memory accelerator (ART Accelerator)

3.4 Memory protection unit (MPU)

DS13105 Rev 8 15/145

3.5.1 Embedded Flash memory

Table 3. Access status versus RDP level and execution mode

1 Yes Yes Yes No No No

16/145 DS13105 Rev 8

1 Yes Yes NA(2) No No NA(2)

3.5.2 Embedded SRAM

DS13105 Rev 8 17/145

3.6 Security management

3.7 Boot modes

3.8 Sub-GHz radio

18/145 DS13105 Rev 8

3.8.2 General description