EEE459 EgGap

EEE459-L2
Energy gap vs. lattice constant for some common elementary and
binary semiconductors
Gap of Some Semiconductors
Fig. (a) Composition dependence of the direct and indirect
bandgap for GaAsP, (b) Energy-momentum diagram for
GaAsP
Model Energy Bands in III-V and IV Semiconductors
• Conduction Band - 3 Valley Model (, L, X minima).

Lowest minima: X (Si), L (Ge),  (GaAs, most III-Vs)
• Valence Band - Light hole, heavy hole, spin-split off band
Energy Bands in AlGaAs Semiconductors
Variation of direct and

indirect conduction
bands in AIGaAs as a
function of composition
Compositional Dependence of AlxIn1-xAs
Compositional Dependence of GaxIn1-xAs
Nitride Semiconductors
Vegard’s Law
Vegard’s Law
Compositional Dependence of Energy Gap of
Ternary III-V Semiconductors
Varshni Equation
 At room temperature and under normal atmospheric
pressure, the values of the bandgap are 1.12 eV for Si
and 1.42 eV for GaAs. These values are for high-purity
materials.
 For highly doped materials the bandgaps become
smaller.
 Experimental results show that the bandgaps of most
semiconductors decrease with increasing temperature.
 The bandgap approaches 1.17 and 1.52 eV respectively
for Si and GaAs at 0 K.
 The variation of bandgaps with temperature can be
expressed approximately by a universal function
Varshni Equation
Energy bandgaps as a function of temperature
Varshni Equation
• The energy band-gaps decrease with increasing

temperature. The variation of the energy band-gaps with
temperature can be expressed with a universal function:
2
E g (T )  E g (0)  T /(T  )
Si Ge GaAs
Eg (eV) 1.12 0.66 1.42
Varshni Equation
Fig. Energy bandgaps of Si and GaAs as a function of temperature.

Doping-Ionization Energy
Measured ionization energies for varies impurities in (a) Si and (b) GaAs.
Levels below the gap center are measured from E, Levels above the gap
center are measured from E,. Solid bars represent donor levels and hollow
boxes represent acceptor levels
Fig. Measured ionization energies for varies impurities in (a) Si and (b)
GaAs. Levels below the gap center are measured from E, Levels above
the gap center are measured from E,. Solid bars represent donor levels
and hollow boxes represent acceptor levels
Band Gap of Alloyed Semiconductor
Emperical Relation and Virtual Crystal Approximation
The band gap Eg, is usually given by empirical relationship,
Eg(x)= Eg0+ bx+ cx2
Eg0 is the bandgap of the lower bandgap binary
b is a fitting parameter
c is the bowing parameter (may be calculated theoretically or
determined experimentally)
The bowing in the bandgap arises from increasing disorder due to
alloying.
Virtual Crystal Approximation:

A simple approach from the weighted constituents A and B
Eg(x)= xEgA+ (1-x)EgB
Known as “Virtual Crystal Approximation.”
Compositional Dependence of Energy Gap of
Ternary III-V Semiconductors
Phonon Spectra
Phonon Spectra
Phonon Spectra
Longitudinally polarized modes are modes with the displacement

vectors of each atom along the direction of the wave vector; thus we
have one longitudinal acoustic mode (LA) and one longitudinal optical
mode (LO). Modes with atoms moving in the planes normal to the
wave vector are called transversely polarized modes. We have two
transverse acoustic (TA) and two transverse optical modes (TO)
Excess Carriers in Semiconductors
Optical absorption of
a photon with hν>Eg;
(a) An EHP is created
during photon
absorption;
(b) the excited
electron gives up
energy to the lattice
by scattering events;
(c) the electron
recombines with a
hole in the valence
band
Absorption in Semiconductors
Absorption in Semiconductors
The beam contains only photons of wavelength λ,

selected by a monochromator. As the beam passes
through the sample, its intensity at a distance x from the
surface can be calculated by considering the probability
of absorption within any increment dx. Since a photon
which has survived to x without absorption has no
memory of how far it has travelled, its probability of
absorption in any dx is constant. Thus the degradation of
the intensity -dl(x)/dx is proportional to the intensity
remaining at x:
Refractive Index
Light Intensity, Reflectance and Transmittance
Light Intensity, Reflectance and Transmittance
n1 = 1.5
n2 = 1
Absorption of Light
Optical Properties
Absorption Coefficient
Dielectric Constant
Propagation Constant
Optical Properties
Optical Properties
Optical Properties
Optical Properties
Optical Properties exp(-10^4*10^(-4)) = exp(-1)
1 um = 10^-4 cm
Transmittance/ Reflectance
Optical Properties
Density of States
Density of states N(E)

(a) bulk semiconductor (3-D)
(b) quantum well (2-D)
(c) quantum wire (1-D)
(d) quantum dot (0-D)

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EEE459-L2

• Conduction Band - 3 Valley Model (, L, X minima).

Variation of direct and

• The energy band-gaps decrease with increasing

Fig. Energy bandgaps of Si and GaAs as a function of temperature.

Virtual Crystal Approximation:

Longitudinally polarized modes are modes with the displacement

The beam contains only photons of wavelength λ,

Density of states N(E)

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