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    Abid Kamal 3798 EDC Lab 11 (1) ..,.

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    Safeer yousafzai
    The document describes an experiment to obtain the input and output characteristics of an NPN transistor in common collector configuration. It provides the objectives, equipment, theory, circuit diagrams, procedure, observations and conclusions of the experiment. The key steps are to vary the base-emitter voltage and measure the corresponding base current and collector-base voltage to plot the input characteristics, and to vary the collector voltage and measure the corresponding emitter current for different fixed base currents to plot the output characteristics.

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    Abid Kamal 3798 EDC Lab 11 (1) ..,.

    Uploaded by

    Safeer yousafzai
    14 views9 pages
    The document describes an experiment to obtain the input and output characteristics of an NPN transistor in common collector configuration. It provides the objectives, equipment, theory, circuit diagrams, procedure, observations and conclusions of the experiment. The key steps are to vary the base-emitter voltage and measure the corresponding base current and collector-base voltage to plot the input characteristics, and to vary the collector voltage and measure the corresponding emitter current for different fixed base currents to plot the output characteristics.

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    Its ecd lab11

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    Abid_kamal_3798_EDC_lab_11[1]..,.

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    The document describes an experiment to obtain the input and output characteristics of an NPN transistor in common collector configuration. It provides the objectives, equipment, theory, circuit diagrams, procedure, observations and conclusions of the experiment. The key steps are to vary the base-emitter voltage and measure the corresponding base current and collector-base voltage to plot the input characteristics, and to vary the collector voltage and measure the corresponding emitter current for different fixed base currents to plot the output characteristics.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    14 views9 pages

    Abid Kamal 3798 EDC Lab 11 (1) ..,.

    Uploaded by

    Safeer yousafzai
    The document describes an experiment to obtain the input and output characteristics of an NPN transistor in common collector configuration. It provides the objectives, equipment, theory, circuit diagrams, procedure, observations and conclusions of the experiment. The key steps are to vary the base-emitter voltage and measure the corresponding base current and collector-base voltage to plot the input characteristics, and to vary the collector voltage and measure the corresponding emitter current for different fixed base currents to plot the output characteristics.

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    © All Rights Reserved
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    Download as docx, pdf, or txt
    of 9

    LAB SESSION 11

    OBJECTIVE:
     To obtain common collector(CC) characteristics of NPN transistor

    EQUIPMENTS REQUIRED:
     Power supply
     Breadboard.
     Transistor ( 2N3904 or any NPN Silicon Transistor)
     Resistor ( 100kΩ , 1kΩ,470kΩ)
     Digital Multimeter ( DMM)

    THEORY:
    In common collector configuration, collector terminal is common between input and output. Input is
    applied between base and collector. Output is taken from emitter and collector. Voltage gain of CC
    configuration is less than unity. CC amplifier is used to provide current gain. It has very high input
    impedance and very low output resistance hence it is used to connect low impedance load to source which
    is having high output impedance. Thus, it can be used as impedance matching. Emitter current is
    approximately equal to collector current, hence output characteristics of CC configuration is very much
    same as CE configuration. However, input characteristics of CE and CC are quite different.

    Circuit diagram to obtain input characteristics:


    Circuit diagram to obtain output characteristics:

    PROCEDURE:
    Experiment Procedure to obtain input characteristics:

    1. Connect circuit as shown in the circuit diagram for input characteristics


    2. Connect variable power supply 0-30V (VBB) at base-emitter circuit and another power supply 0-30V at
    collector emitter circuit (Vcc).
    3. Keep Vce fix at 0V (Or do not connect Vcc)
    4. Increase VBB from 0V to 20V, note down readings of base current Ib and collector to base voltage
    (Vcb) in the observation table.
    5. Repeat above procedure for Vce = +1V and Vce = +2V
    6. Draw input characteristics curve. Plot Vcb on X axis and Ib on Y axis.

    Experiment Procedure to obtain output characteristics:

    1. Connect circuit as shown in the circuit diagram for output characteristics


    2. Connect variable power supply 0-30V at base circuit and collector circuit.
    3. Keep base current fix (Initially 0)
    4. Increase VCC from 0V to 30V, note down readings of emitter current Ic and collector to emitter voltage
    VCE in the observation table.
    5. Repeat above procedure for base currents I B = 10μA, 50 μA and 100μA. Increase base current by
    increasing VBB.
    6. Draw output characteristics curve. Plot VCE on X axis and IE on Y axis for different values of base
    currents.

    OBSERVATIONS:

    Input Characteristics:
    S.No
    Applied Voltage VCC = 1V VCC = 5V VCC = 10V
    VBB(V)
    VCB(V) IB (mA) VCB(V) IB (mA) VCB(V) IB (mA)

    1 0.5 0.456V 433.8nA 4.503V 26.518nA 9.502V 21.855nA

    2 1 0.519V 4.809uA 4.718V 1.718uA 9.173V 1.729uA

    3 1.5 0.537V 9.629uA 3.887V 3.771uA 8.865V 3.653uA

    4 2 0.547V 14.522uA 3.572V 5.719uA 8.553V 5.534uA

    5 2.5 0.555V 19.445uA 3.264V 7.64uA 8.239V 7.387uA

    6 3 0.561V 24.386uA 2.954V 9.544uA 7.922V 9.222uA

    7 3.5 0.566V 29.338uA 2.644V 11.437uA 7.605V 11.047uA

    8 4 0.570V 43.297uA 2.333V 13.326uA 7.287V 12.866uA

    9 4.5 0.573V 39.261uA 2.021V 15.213uA 6.983V 14.682uA

    10 5 0.577V 44.23uA 1.71V 17.102uA 6.665V 16.499uA


    Output Characteristics:

    S.No Applied IB = 1 µA IB = 5 µA IB = 10 µA
    Voltage
    VCE(V) IE (mA) VCE(V) IE (mA) VCE(V) IE (mA)
    VCC(V)

    1 0.5 0.404V 95.394uA 0.143V 356.7uA 0.111V 388.6uA

    2 1 0.904V 95.738uA 0.532V 467.1uA 0.208V 791.5uA

    3 1.5 1.404V 96.078uA 1.031V 468.5uA O.685V 814.5uA

    4 2 1.904V 96.416uA 1.53V 469.8uA 1.183V 816.7uA

    5 2.5 2.403V 96.735uA 2.029V 471.1uA 1.681V 818.9uA

    6 3 2.903V 97.078uA 2.527V 472.5uA 2.179V 821.1uA

    7 3.5 3.403V 97.42Ua 3.026V 473.8uA 2.677V 823.3uA

    8 4 3.902V 97.571uA 3.525V 475.1uA 3.175V 825.4uA

    9 4.5 4.402V 98.08uA 4.024V 476.4uA 3.672V 827.6uA

    10 5 4.902V 98.407uA 4.522V 477.7uA 4.17V 829.7uA

    CONCLUSION.
    In this we came to know about the common emitter configuration of NPN transistor. We used a software
    mutisim and draw the circuit diagram for input characteristics. We keep VCC constant at 0V and we
    increased VBB from 0.5 to 5V and wemeasured voltage of collector to base Vcb and base current Ib. .Then
    we changed VCC to 5V and 10V and repeat the same process.
    Then we draw crcuit diagram for output characteristics. We fix the the base current Ib at 1uA and measured
    the values of emmiter current Ie and collector to emmiter voltage Vce. Then we repeat the same process for
    base current at 5uA and 10uA. And fix Vbb at 0.8, 1.5 and 2.1V. then we draw graph at the end.

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