A1P25S12M3

Datasheet

ACEPACK™ 1 sixpack topology, 1200 V, 25 A,

trench gate field‑stop M series IGBT with soft diode and NTC

Features
• ACEPACK™ 1 power module
– DBC Cu Al2O3 Cu
• Sixpack topology
– 1200 V, 25 A IGBTs and diodes
– Soft and fast recovery diode
• Integrated NTC

ACEPACK™ 1 Applications
• Inverters
• Industrial
• Motor drives

Description
This power module is a sixpack topology in an ACEPACK™ 1 package with NTC,
integrating the advanced trench gate field-stop technologies from
STMicroelectronics. This new IGBT technology represents the best compromise
between conduction and switching loss, to maximize the efficiency of any converter
system up to 20 kHz.

Product status

A1P25S12M3

Product summary

Order code A1P25S12M3

Marking A1P25S12M3
Package ACEPACK™ 1
Leads type Solder contact pins

DS12281 - Rev 4 - November 2018 www.st.com

For further information contact your local STMicroelectronics sales office.
 A1P25S12M3
Electrical ratings

1 Electrical ratings

1.1 IGBT
Limiting values at TJ = 25 °C, unless otherwise specified.

Table 1. Absolute maximum ratings of the IGBT

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 1200 V

IC Continuous collector current (TC = 100 °C) 25 A

ICP (1) Pulsed collector current (tp = 1 ms) 50 A

VGE Gate-emitter voltage ±20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 197 W

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBT

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter breakdown
V(BR)CES IC = 1 mA, VGE = 0 V 1200 V
voltage
VGE = 15 V, IC= 25 A 1.95 2.45
VCE(sat) Collector-emitter saturation
VGE = 15 V, IC = 25 A, V
(terminal) voltage 2.3
TJ = 150 ˚C

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V ± 500 nA

Cies Input capacitance 1550 pF

VCE = 25 V, f = 1 MHz,
Coes Output capacitance 130 pF
VGE = 0 V
Cres Reverse transfer capacitance 65 pF

VCC = 960 V, IC = 25 A,
Qg Total gate charge 122 nC
VGE = ±15 V

td(on) Turn-on delay time VCC = 600 V, IC = 25 A, 121 ns

tr Current rise time RG = 15 Ω, VGE = ±15 V, 17 ns

Eon (1)
Turn-on switching energy di/dt = 1247 A/µs 1.08 mJ

td(off) Turn-off delay time VCC = 600 V, IC = 25 A, 119 ns

tf Current fall time RG = 15 Ω, VGE = ±15 V, 127 ns

Eoff (2)
Turn-off switching energy dv/dt = 10200 V/µs 1.12 mJ

DS12281 - Rev 4 page 2/15

 A1P25S12M3
Diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VCC = 600 V, IC = 25 A, 121 ns

tr Current rise time RG = 15 Ω, VGE = ±15 V, 18 ns

Eon (1)
Turn-on switching energy di/dt = 1100 A/µs, TJ = 150 °C 1.65 mJ

td(off) Turn-off delay time VCC = 600 V, IC = 25 A, 125 ns

tf Current fall time RG = 15 Ω, VGE = ±15 V, 201 ns

Eoff(2) Turn-off switching energy dv/dt = 8300 V/µs, TJ = 150 °C 1.66 mJ

VCC ≤ 600 V, VGE ≤ 15 V,

tSC Short-circuit withstand time 10 µs
TJstart ≤ 150 °C

Thermal resistance junction-

RTHj-c Each IGBT 0.69 0.76 °C/W
to-case
Thermal resistance case-to-
RTHc-h Each IGBT, λgrease = 1 W/(m·°C) 0.79 °C/W
heatsink

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

1.2 Diode
Limiting values at TJ = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 1200 V

IF Continuous forward current (TC = 100 °C) 25 A

IFP (1) Pulsed forward current (tp = 1 ms) 50 A

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

DS12281 - Rev 4 page 3/15

 A1P25S12M3
NTC

Table 4. Electrical characteristics of the diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

VF IF = 25 A - 2.95 4.1
Forward voltage V
(terminal) IF = 25 A, TJ = 150 ˚C - 2.3

trr Reverse recovery time - 190 ns

Qrr Reverse recovery charge IF = 25 A, VR = 600 V, - 1.55 µC

Irrm Reverse recovery current VGE = ±15 V, di/dt = 1247 A/μs - 29 A

Erec Reverse recovery energy - 0.71 mJ

trr Reverse recovery time - 400 ns

IF = 25 A, VR = 600 V,
Qrr Reverse recovery charge - 4.0 µC
VGE = ±15 V, di/dt = 1100 A/μs,
Irrm Reverse recovery current - 37 A
TJ = 150 °C
Erec Reverse recovery energy - 2.05 mJ

Thermal resistance junction-to-

RTHj-c Each diode - 1.05 1.16 °C/W
case
Thermal resistance case-to-
RTHc-h Each diode, λgrease = 1 W/(m·°C) - 0.85 °C/W
heatsink

1.3 NTC

Table 5. NTC temperature sensor, considered as stand-alone

Symbol Parameter Test conditions Min. Typ. Max. Unit

R25 Resistance T = 25°C 5 kΩ

R100 Resistance T = 100°C 493 Ω

ΔR/R Deviation of R100 -5 +5 %

B25/50 B-constant 3375 K

B25/80 B-constant 3411 K

T Operating temperature range -40 150 °C

Figure 1. NTC resistance vs temperature Figure 2. NTC resistance vs temperature, zoom

R GADG260720171142NTC R GADG260720171151NTCZ
(Ω) (Ω)

800
max
10 4 700

600
min

10 3 500
typ

400

10 2 300
0 25 50 75 100 125 TC (°C) 85 90 95 100 105 110 TC (°C)

DS12281 - Rev 4 page 4/15

 A1P25S12M3
Package

1.4 Package

Table 6. ACEPACK™ 1 package

Symbol Parameter Min. Typ. Max. Unit

Visol Isolation voltage (AC voltage, t = 60 s) 2500 V

Tstg Storage temperature -40 125 °C

CTI Comparative tracking index 200

Ls Stray inductance module P1 - EW loop 28.7 nH

Rs Module single lead resistance, terminal-to-chip 3.9 mΩ

DS12281 - Rev 4 page 5/15

 A1P25S12M3
Electrical characteristics (curves)

2 Electrical characteristics (curves)

Figure 3. IGBT output characteristics Figure 4. IGBT output characteristics

(VGE = 15 V, terminal) (TJ = 150 °C, terminal)

Ic IGBT010920171111OC15 IC IGBT010920171114OC175
(A) (A) 19 V 13 V
TJ = 25 °C 17 V
40 40 15 V
11 V

30 30
TJ = 150 °C

20 20

9V
10 10

0 0
0 1 2 3 4 5 VCE (V) 0 1 2 3 4 5 VCE (V)

Figure 5. IGBT transfer characteristics

Figure 6. IGBT collector current vs case temperature
(VCE = 15 V, terminal)
IC IGBT301020181037CCT
IC IGBT010920171115TCH
(A)
(A)
50
40
40

30
30

20 20
TJ = 150 °C
VCC = 15 V, TJ ≤ 175 °C
10 10
TJ = 25 °C
0
0 0 25 50 75 100 125 150 TC (°C)
5 6 7 8 9 10 11 VGE (V)

Figure 7. Switching energy vs gate resistance Figure 8. Switching energy vs collector current
E IGBT010920171119SLG E IGBT010920171136SLC
(mJ) (mJ) VCC = 600 V, RG = 15 Ω, VGE ± 15 V
VCC = 600 V, IC = 25 A, VGE ± 15 V
3.5
5.0 EON (TJ = 150°C)
3.0
4.0 EON (TJ = 150 °C) EOFF (TJ = 150 °C)
2.5

3.0 2.0 EON (TJ = 25 °C)

EON (TJ = 25 °C)

1.5
2.0
EOFF (TJ = 25 °C)
EOFF (TJ = 150 °C) 1.0
1.0
EOFF (TJ = 25 °C) 0.5
0 0
0 20 40 60 80 RG (Ω) 5 15 25 35 45 IC (A)

DS12281 - Rev 4 page 6/15

 A1P25S12M3
Electrical characteristics (curves)

Figure 9. IGBT reverse biased safe operating area

Figure 10. Diode forward characteristics (terminal)
(RBSOA)
IF (A) IGBT010920171142DVF
IC IGBT010920171137OC25
(A)

50 40

TJ = 150 °C
40
30

30
20
20
TJ = 25 °C
10
10
TJ = 125 °C, VGE ±15 V, RG = 15 Ω
0
0 0 1 2 3 4 VF (V)
0 200 400 600 800 1000 1200 VCE (V)

Figure 11. Diode reverse recovery energy vs diode current Figure 12. Diode reverse recovery energy vs forward
slope current

Erec IGBT010920171146RRE Erec IGBT010920171152SLC

(mJ) (mJ)
VCC = 600 V, VGE ± 15 V, IF = 25 A
2.5
2.0
2.2 TJ = 150 °C

1.6 TJ = 150 °C 1.9

1.6
1.2
1.3

0.8 1.0 TJ = 25 °C

0.7
0.4 TJ = 25 °C
0.4
VCC = 600 V, RG = 15 Ω, VGE ± 15 V
0.0 0.1
200 500 800 1100 di/dt (A/µs) 5 15 25 35 45 IF (A)

Figure 13. Diode reverse recovery energy vs gate

Figure 14. Inverter diode thermal impedance
resistance
Zth(°C/W) IGBT010920171157ZTH
Erec IGBT010920171155SLG
(mJ) VCC = 600 V, IF = 25 A, VGE ±15 V

2.1
TJ = 150 °C Zth(typ.) JH
1.7

10 0 Zth(max.) JC
1.3
JC RC - Foster thermal network
i 1 2 3 4
0.9 ri (˚C/W) 0.1910 0.5509 0.2946 0.1199
τi(s) 0.0008 0.0073 0.0370 0.2617

JH RC - Foster thermal network

0.5 TJ = 25 °C i 1 2 3 4
ri (˚C/W) 0.2131 0.5638 0.7377 0.3803
0.0009 0.0108 0.0673 0.3134
10 -1 τi(s)
0.1 10 -3 10 -2 10 -1 10 0 t (s)
0 20 40 60 80 RG (Ω)

DS12281 - Rev 4 page 7/15

 A1P25S12M3
Electrical characteristics (curves)

Figure 15. IGBT thermal impedance

Zth(°C/W) IGBT010920171158ZTH

Zth(typ.) JH

100

Zth(max.) JC
JC RC - Foster thermal network
i 1 2 3 4
ri (˚C/W) 0.0822 0.3156 0.2443 0.1146
τi(s) 0.0003 0.0072 0.0406 0.2856

JH RC - Foster thermal network

i 1 2 3 4
ri (˚C/W)

10-1 τi(s)

10-3 10-2 10-1 100 t (s)

DS12281 - Rev 4 page 8/15

 A1P25S12M3
Test circuits

3 Test circuits

Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit

A A
C
L=100 µH k
G k

E B
B
C 3.3 1000 VCC
µF µF
k
G D.U.T
k
+ RG E

k
-
k

AM01504v1 AM01505v1

Figure 19. Diode reverse recovery waveform

Figure 18. Switching waveform

90%

VG 10%

90%

VCE Tr(Voff)
10%
Tcross

90% 25

IC Td(off)
10%
Td(on) Tf
Tr(Ion)
Toff
Ton

AM01506v1

DS12281 - Rev 4 page 9/15

 A1P25S12M3
Topology and pin description

4 Topology and pin description

Figure 20. Electrical topology and pin description

G1 G3 G5
T1
U
V
W

T2 G2 G4 G6

E’U E’V E’W

EU EV EW

Figure 21. Package top view with sixpack pinout

DS12281 - Rev 4 page 10/15

 A1P25S12M3
Package information

5 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.

DS12281 - Rev 4 page 11/15

 A1P25S12M3
ACEPACK™ 1 sixpack solder pins package information

5.1 ACEPACK™ 1 sixpack solder pins package information

Figure 22. ACEPACK™ 1 sixpack solder pins package outline (dimensions are in mm)

32.00

E'W EW G4 EV E'V EU E'U 28.80

G6 G2 25.60
T1

T2 22.40

P 16.00
P

12.80
W U

W
V V G3
U 6.40
G5 G1

3.20

0.00

3.2 BSC
□0.64±0.03
15.5±0.50

12±0.35
25.60

22.40

19.20

16.00

9.60

6.40

3.20

0.00

33.8±0.3

28.1±0.2
Section B-B
19.4±0.2
2.3 REF

8.5
16.4±0.2
1.3±0.2

B
3.2 BSC

42.5±0.2
62.8±0.5
36.8 REF

48±0.3

53±0.1
41±0.2

Detail A 2.5±0.2
A
A

3.5 REF x45°

4.5±0.1

GADG240820170900MT_8569715_4

• The lead size includes the thickness of the lead plating material.
• Dimensions do not include mold protrusion.
• Package dimensions do not include any eventual metal burrs.

DS12281 - Rev 4 page 12/15

 A1P25S12M3

Revision history

Table 7. Document revision history

Date Revision Changes

01-Sep-2017 1 Initial release.

Document status promoted from preliminary data to production data.
Updated Table 7: "ACEPACK™ 1 package" and Section 2: "Electrical
03-Oct-2017 2
characteristics curves".
Minor text changes.
Updated features and removed maturity status indication from cover page.
Updated Figure 13. Inverter diode thermal impedance and Figure 14. IGBT
thermal impedance.
16-Feb-2018 3
Updated Figure 21. ACEPACK™ 1 sixpack solder pins package outline
(dimensions are in mm).
Minor text changes
Added Figure 6. IGBT collector current vs case temperature.
14-Nov-2018 4
Minor text changes

DS12281 - Rev 4 page 13/15

 A1P25S12M3
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3 NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.4 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4 Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
5.1 ACEPACK™ 1 sixpack solder pins package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

DS12281 - Rev 4 page 14/15

 A1P25S12M3

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved

DS12281 - Rev 4 page 15/15