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Manual of Experiments - Expt - 1

The document describes an experiment to: 1) Characterize a bipolar junction transistor (BJT) by measuring its input/output and transfer characteristics to extract model parameters like transconductance, input resistance, and Early voltage. 2) Design a simple common emitter amplifier using the extracted BJT parameters by choosing bias resistors to set the operating point, and simulate the circuit to observe its voltage gain and output swing. 3) Construct the amplifier circuit and measure its operating point and performance at 1kHz, including voltage gain and maximum linear output.

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22 views2 pages

Manual of Experiments - Expt - 1

The document describes an experiment to: 1) Characterize a bipolar junction transistor (BJT) by measuring its input/output and transfer characteristics to extract model parameters like transconductance, input resistance, and Early voltage. 2) Design a simple common emitter amplifier using the extracted BJT parameters by choosing bias resistors to set the operating point, and simulate the circuit to observe its voltage gain and output swing. 3) Construct the amplifier circuit and measure its operating point and performance at 1kHz, including voltage gain and maximum linear output.

Uploaded by

utkarshpatel.up04
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Experiment I: D.C.

characterization of BJT and design of simple amplifier


Objective:
(i) To observe I-V characteristic of a Bipolar transistor
(ii) To extract values of device model parameters from the observed I-V characteristic
(iii) Use the model parameters to design a simple common emitter amplifier.
(iv) Simulate performance of the amplifier

Part A: Characterization and finding parameters of an n-p-n transistor

Experiment Steps:
(i) Observe output characteristic i.e., Ic vs. Vce for three different values of Ib using the circuit
shown in Fig. 1.a(i).
(ii) Observe input to output trans-characteristics i.e., Ic vs. Vbe and input characteristic i.e., Ib
vs. Vbe (while keeping the transistor in active region of operation) using the circuit shown
in Fig. 1.a(ii).

Calculations Steps:
(iii) From Ic vs. Vce characteristic, find the values of Early voltage (VA) and small signal
collector-emitter resistance ro for each of the values of Ib.
(iv) From trans-characteristic (i.e., Ic vs. Vbe), find the value of trans-conductance, gm (from
Input-Output characteristic)
(v) From the input characteristic (i.e., Ib vs. Vbe ), find the value of small signal input
resistance, r and the value of IS(B) (assuming non-
(vi) Combining the trans-characteristic and the input characteristic obtain the trans-
characteristic Ic vs. Ib F and small
o .

Notes:
(i) The given circuit diagrams are only for n-p-n transistors. You may construct appropriate
circuit for p-n-p transistor characterization.
(ii) Caution: the base bias resistor Rb should be high to avoid burnout of the BJT !
Vcc Vcc

Rb1 R2

Ic R2 Ic R1
Rb
R1
Rb2
Vce Vce
Ib Rb3
Vbe

Gnd Gnd

Fig. 1.a (ii)


Fig. 1.a (i)
Part B: Design a simple Common Emitter amplifier using the BJT parameters, simulate the
circuit and observe its performance

Experiment Steps:
(i) A simple common emitter (fixed bias) circuit shown in Fig. 1.b. Find suitable values of
the bias resistors Rb and Rc such that IC is in the range of 1-2mA and VCE is around 6V
(with Vcc = 12V).

(ii) Construct the circuit and measure the operating point


(iii) Observe the voltage gain of the amplifier at 1 kHz signal frequency.
(iv) Measure the maximum output signal swing (without significant distortion).
(v) Observe the input to output transfer characteristic using 1kHz ramp input

Vcc

Rc

Rb

Vce

Gnd

Fig. 1.b

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