DATA SHEET

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Small Signal MOSFET V(BR)DSS RDS(on) MAX ID MAX

60 V, 380 mA, Single, N−Channel, SOT−23 60 V

1.6 W @ 10 V
380 mA
2.5 W @ 4.5 V

2N7002K, 2V7002K SIMPLIFIED SCHEMATIC

Features
• ESD Protected Gate 1

• Low RDS(on)
• Surface Mount Package 3 Drain
• 2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
Source 2
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant (Top View)

Applications MARKING DIAGRAM

& PIN ASSIGNMENT
• Low Side Load Switch 3
Drain
• Level Shift Circuits 3
1
• DC−DC Converter
2
• Portable Applications i.e. DSC, PDA, Cell Phone, etc. 704 MG
SOT−23 G
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) CASE 318
STYLE 21 1 2
Rating Symbol Value Unit Gate Source
Drain−to−Source Voltage VDSS 60 V 704 = Specific Device Code*
M = Date Code*
Gate−to−Source Voltage VGS ±20 V
G = Pb−Free Package
Drain Current (Note 1) ID mA (Note: Microdot may be in either location)
Steady State 1 sq in Pad TA = 25°C 380 *Specific Device Code, Date Code or overbar
TA = 85°C 270 orientation and/or location may vary depend-
ing upon manufacturing location. This is a
Drain Current (Note 2) ID mA representation only and actual devices may
Steady State Minimum Pad TA = 25°C 320 not match this drawing exactly.
TA = 85°C 230
Power Dissipation PD mW ORDERING INFORMATION
Steady State 1 sq in Pad 420
Steady State Minimum Pad 300 Device Package Shipping†
Pulsed Drain Current (tp = 10 ms) IDM 5.0 A 2N7002KT1G, SOT−23 3000 / Tape & Reel
Operating Junction and Storage TJ, TSTG −55 to °C 2V7002KT1G (Pb−Free)
Temperature Range +150 2N7002KT7G SOT−23 3500 / Tape & Reel
Source Current (Body Diode) IS 300 mA (Pb−Free)

Lead Temperature for Soldering Purposes TL 260 °C †For information on tape and reel specifications,
(1/8″ from case for 10 s) including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Gate−Source ESD Rating ESD 2000 V Brochure, BRD8011/D.
(HBM, Method 3015)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.
2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.

© Semiconductor Components Industries, LLC, 2007 1 Publication Order Number:

August, 2021 − Rev. 18 2N7002K/D
 2N7002K, 2V7002K

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Junction−to−Ambient − Steady State (Note 3) RqJA 300 °C/W
Junction−to−Ambient − t ≤ 5 s (Note 3) 92
Junction−to−Ambient − Steady State (Note 4) 417
Junction−to−Ambient − t ≤ 5 s (Note 4) 154
3. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.
4. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 V
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ 71 mV/°C
Temperature Coefficient
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1 mA
VDS = 60 V TJ = 125°C 10
VGS = 0 V, TJ = 25°C 100 nA
VDS = 50 V
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±10 mA
VDS = 0 V, VGS = ±10 V 450 nA
VDS = 0 V, VGS = ±5.0 V 150 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.0 2.3 V
Negative Threshold Temperature VGS(TH)/TJ 4.0 mV/°C
Coefficient
Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 500 mA 1.19 1.6 W
VGS = 4.5 V, ID = 200 mA 1.33 2.5
Forward Transconductance gFS VDS = 5 V, ID = 200 mA 530 mS
CHARGES AND CAPACITANCES
Input Capacitance CISS 24.5 45 pF
VGS = 0 V, f = 1 MHz,
Output Capacitance COSS 4.2 8.0
VDS = 20 V
Reverse Transfer Capacitance CRSS 2.2 5.0
Total Gate Charge QG(TOT) 0.7 nC
Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V; 0.1
Gate−to−Source Charge QGS ID = 200 mA 0.3
Gate−to−Drain Charge QGD 0.1
SWITCHING CHARACTERISTICS, VGS = V (Note 6)
Turn−On Delay Time td(ON) 12.2 ns
Rise Time tr VGS = 10 V, VDD = 25 V, 9.0
Turn−Off Delay Time td(OFF) ID = 500 mA, RG = 25 W 55.8
Fall Time tf 29
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.8 1.2 V
IS = 200 mA TJ = 85°C 0.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures

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2
 2N7002K, 2V7002K

TYPICAL CHARACTERISTICS

1.6 1.2
VGS = 10 V 5.0 V
4.5 V
9.0 V
8.0 V 4.0 V
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

1.2
7.0 V
6.0 V 0.8
3.5 V
0.8
TJ = 25°C
3.0 V 0.4
0.4
2.5 V
TJ = 125°C TJ = −55°C
0 0
0 2 4 6 0 2 4 6
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

3.2 3.2
VGS = 4.5 V VGS = 10 V
2.8 2.8
TJ = 125°C
2.4 TJ = 85°C 2.4 TJ = 125°C

2.0 TJ = 25°C 2.0 TJ = 85°C

1.6 1.6 TJ = 25°C

TJ = −55°C
1.2 1.2
TJ = −55°C
0.8 0.8

0.4 0.4
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2
ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and
Temperature Temperature
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

2.4 2.2
ID = 0.2 A
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE

2.0 ID = 500 mA
1.8
VGS = 4.5 V
1.6
VGS = 10 V
1.4
ID = 200 mA
1.2

1.0
0.8

0.4 0.6
2 4 6 8 10 −50 −25 0 25 50 75 100 125 150
VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source Figure 6. On−Resistance Variation with
Voltage Temperature

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 2N7002K, 2V7002K

TYPICAL CHARACTERISTICS

30 5

VGS, GATE−TO−SOURCE VOLTAGE (V)

Ciss
TJ = 25°C
4 ID = 0.2 A
C, CAPACITANCE (pF)

20
3
TJ = 25°C
VGS = 0 V
Coss 2
10

Crss
0 0
0 4 8 12 16 20 0 0.2 0.4 0.6 0.8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge

10 2.5
2.4 ID = 250 mA
VGS = 0 V VGS(TH), THRESHOLD VOLTAGE (V)
2.3
IS, SOURCE CURRENT (A)

2.2
2.1
1 2.0
1.9
1.8
TJ = 85°C TJ = 25°C 1.7
1.6
0.1 1.5
1.4
1.3
1.2
1.1
0.01 1.0
0.4 0.6 0.8 1.0 1.2 −50 −25 0 25 50 75 100 125 150
VSD, SOURCE−TO−DRAIN VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Diode Forward Voltage vs. Current Figure 10. Threshold Voltage with
Temperature

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 2N7002K, 2V7002K

TYPICAL CHARACTERISTICS

1000
RqJA(t) (°C/W) EFFECTIVE TRANSIENT

Duty Cycle = 0.5

100 0.2
THERMAL RESISTANCE

0.1
0.05
10 0.02

0.01
1
SINGLE PULSE

0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
Figure 11. Thermal Response − 1 sq in pad

1000
RqJA(t) (°C/W) EFFECTIVE TRANSIENT

Duty Cycle = 0.5

0.2
100
THERMAL RESISTANCE

0.1
0.05
0.02
10

0.01
1
SINGLE PULSE

0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
Figure 12. Thermal Response − minimum pad

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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
3 THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
E HE T PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b A1 0.01 0.06 0.10 0.000 0.002 0.004
L1 b 0.37 0.44 0.50 0.015 0.017 0.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
L1 0.35 0.54 0.69 0.014 0.021 0.027
A HE 2.10 2.40 2.64 0.083 0.094 0.104
T 0° −−− 10 ° 0° −−− 10°
A1 SIDE VIEW SEE VIEW C c
GENERIC
END VIEW
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT XXXMG
G
1
3X
2.90 0.90 XXX = Specific Device Code
M = Date Code
G = Pb−Free Package

*This information is generic. Please refer to

3X 0.80 0.95 device data sheet for actual part marking.
PITCH Pb−Free indicator, “G” or microdot “ G”,
DIMENSIONS: MILLIMETERS may or may not be present.

STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:

CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION
3. COLLECTOR 3. COLLECTOR 3. CATHODE

STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE

STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION

STYLE 27: STYLE 28:

PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. CATHODE 3. ANODE

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1

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