SRM Institute of Science & Technology

Faculty of Engineering & Technology

Ramapuram Campus

Unit 3
1. A device which converts electrical energy in the form of a current into optical energy is called as ___________
a) Optical source
b) Optical coupler
c) Optical isolator
d) Circulator
Ans :a
2.How many types of sources of optical light are available?
a) One
b) Two
c) Three
d) Four
Ans : c
3. The frequency of the absorbed or emitted radiation is related to difference in energy E between the higher energy
state E2 and the lower energy state E1. State what h stands for in the given equation?
E = E2 - E1 = hf
a) Gravitation constant
b) Planck’s constant
c) Permittivity
d) Attenuation constant
Ans : B
4. 4. The radiation emission process (emission of a proton at frequency) can occur in __________ ways.
a) Two
b) Three
c) Four
d) One
Ans : B
5. Which process gives the laser its special properties as an optical source?
a) Dispersion
b) Stimulated absorption
c) Spontaneous emission
d) Stimulated emission
Ans :D
6. An incandescent lamp is operating at a temperature of 1000K at an operating frequency of 5.2×1014 Hz. Calculate
the ratio of stimulated emission rate to spontaneous emission rate.
a) 3×10-13
b) 1.47×10-11
c) 2×10-12
d) 1.5×10-13
ANs: B
Explanation: The ratio of the stimulated emission rate to the spontaneous emission rate is given by-
Stimulated emission rate/ Spontaneous emission rate = 1/exp (hf/KT)-1.
7. The lower energy level contains more atoms than upper level under the conditions of ________________
a) Isothermal packaging
b) Population inversion
c) Thermal equilibrium
d) Pumping
Ans : C
8. __________________ in the laser occurs when photon colliding with an excited atom causes the stimulated emission
of a second photon.
a) Light amplification
b) Attenuation
c) Dispersion
d) Population inversion
Ans : A
9.A semiconductor laser crystal of length 5 cm, refractive index 1.8 is used as an optical source. Determine the
frequency separation of the modes.
a) 2.8 GHz
b) 1.2 GHz
c) 1.6 GHz
d) 2 GHz
Answer: c
Explanation: The modes of laser are separated by a frequency internal δf and this separation is given by-
δf = c/2nL
Where
c = velocity of light
n = Refractive index
L = Length of the crystal.
10. An injection laser has active cavity losses of 25 cm-1 and the reflectivity of each laser facet is 30%. Determine the
laser gain coefficient for the cavity it has a length of 500μm.
a) 46 cm-1
b) 51 cm-1
c) 50 cm-1
d) 49.07 cm-1
Answer: d
Explanation: The laser gain coefficient is equivalent to the threshold gain per unit length and is given by –
gth = α + 1/L ln (1/r)
Where
α = active cavity loss
L = Length of the cavity
r = reflectivity.
11. A perfect semiconductor crystal containing no impurities or lattice defects is called as __________
a) Intrinsic semiconductor
b) Extrinsic semiconductor
c) Excitation
d) Valence electron
Answer: a
12. What is done to create an extrinsic semiconductor?
a) Refractive index is decreased
b) Doping the material with impurities
c) Increase the band-gap of the material
d) Stimulated emission
Answer: b
13. The majority of the carriers in a p-type semiconductor are __________
a) Holes
b) Electrons
c) Photons
d) Neutrons
Ans: A
14. _________________ is used when the optical emission results from the application of electric field.
a) Radiation
b) Efficiency
c) Electro-luminescence
d) Magnetron oscillator
Answer: c
15. Which impurity is added to gallium phosphide to make it an efficient light emitter?
a) Silicon
b) Hydrogen
c) Nitrogen
d) Phosphorus
Answer: c
16. Population inversion is obtained at a p-n junction by __________
a) Heavy doping of p-type material
b) Heavy doping of n-type material
c) Light doping of p-type material
d) Heavy doping of both p-type and n-type material
Ans : D
17. How many types of hetero-junctions are available?
a) Two
b) One
c) Three
d) Four
Answer: a
18. The ______________ system is best developed and is used for fabricating both lasers and LEDs for the shorter
wavelength region.
a) InP
b) GaSb
c) GaAs/GaSb
d) GaAs/Alga AS DH
Answer: d
19. Stimulated emission by recombination of injected carriers is encouraged in __________
a) Semiconductor injection laser
b) Gas laser
c) Chemist laser
d) Dye laser
Answer: a
20. In semiconductor injection laser, narrow line bandwidth is of the order?
a) 1 nm or less
b) 4 nm
c) 5 nm
d) 3 nm
Answer: a
21. The total efficiency of an injection laser with GaAs active region is 12%. The applied voltage is 3.6 V and band gap
energy for GaAs is 2.34 eV. Determine external power efficiency.
a) 7.8 %
b) 10 %
c) 12 %
d) 6 %
Answer: a
Explanation: The total external power efficiency is defined as
η = ηT(Eq/V)*100
= 0.12 (2.34/3.6) *100
= 7.8 %.
22. Laser modes are generally separated by few __________
a) Tenths of micrometer
b) Tenths of nanometer
c) Tenths of Pico-meter
d) Tenths of millimeter
Answer: b
23. The spectral width of emission from the single mode device is __________
a) Smaller than broadened transition line-width
b) Larger than broadened transition line-width
c) Equal the broadened transition line-width
d) Cannot be determined
Answer: a
24. Single longitudinal mode operation is obtained by __________
a) Eliminating all transverse mode
b) Eliminating all longitudinal modes
c) Increasing the length of cavity
d) Reducing the length of cavity
Answer: d
25. In a DH laser, the sides of cavity are formed by _______________
a) Cutting the edges of device
b) Roughening the edges of device
c) Softening the edges of device
d) Covering the sides with ceramics
Answer: b
26. Gain guided laser structure are __________
a) Chemical laser
b) Gas laser
c) DH injection laser
d) Quantum well laser
View Answer
Answer: c
27. A correct DH structure will restrict the vertical width of waveguide region is?
a) 0.5μm.
b) 0.69 μm
c) 0.65 μm
d) Less than 0.4 μm
Answer: d
28. The absence of _______________ in LEDs limits the internal quantum efficiency.
a) Proper semiconductor
b) Adequate power supply
c) Optical amplification through stimulated emission
d) Optical amplification through spontaneous emission
Answer: c
29.The excess density of electrons Δn and holes Δp in an LED is ____________
a) Equal
b) Δp more than Δn
c) Δn more than Δp
d) Does not affects the LED
Answer: a
30.The hole concentration in extrinsic materials is _________ electron concentration.
a) much greater than
b) lesser than
c) equal to
d) negligible difference with
Answer: a
31. Determine the total carrier recombination lifetime of a double heterojunction LED where the radioactive and
nonradioactive recombination lifetime of minority carriers in active region are 70 ns and 100 ns respectively.
a) 41.17 ns
b) 35 ns
c) 40 ns
d) 37.5 ns
Answer: a
Explanation: The total carrier recombination lifetime is given by
τ = τrτnr/τr+τnr = 70× 100/70 + 100 ns = 41.17 ns
Where
τr = radiative recombination lifetime of minority carriers
τnr = nonradioactive recombination lifetime of minority carriers.
32. Determine the internal quantum efficiency generated within a device when it has a radiative recombination lifetime
of 80 ns and total carrier recombination lifetime of 40 ns.
a) 20 %
b) 80 %
c) 30 %
d) 40 %
Answer: b
Explanation: The internal quantum efficiency of device is given by
ηint = τ/τr = 40/80 ×100 = 80%
Where
τ = total carrier recombination lifetime
τr = radiative recombination lifetime.
33.Compute power internally generated within a double-heterojunction LED if it has internal quantum efficiency of
64.5 % and drive current of 40 mA with a peak emission wavelength of 0.82 μm.
a) 0.09
b) 0.039
c) 0.04
d) 0.06
Answer: b
Explanation: The power internally generated within device i.e. double-heterojunction LED can be computed by
Pint = ηinthci/eλ = 0.645×6.626×10-34×3×108×40×10-3/ 1.602×10-19 × 0.82 × 10-6
= 0.039 W
Where
ηint = internal quantum efficiency
h = Planck’s constant
c = velocity of light
i = drive current
e = electron charge
λ = wavelength.

34. The Lambertian intensity distribution __________ the external power efficiency by some percent.
a) Reduces
b) Does not affects
c) Increases
d) Have a negligible effect
View Answer
Answer: a
35.The amount of radiance in planer type of LED structures is ____________
a) Low
b) High
c) Zero
d) Negligible
Answer: a
36. In optical fiber communication _____________ major types of LED structures are used.
a) 2
b) 4
c) 6
d) 3
Answer: c
37. As compared to planar LED structure, Dome LEDs have ______________ External power efficiency ___________
effective emission area and _____________ radiance.
a) Greater, lesser, reduced
b) Higher, greater, reduced
c) Higher, lesser, increased
d) Greater, greater, increased
Answer: b
38.In surface emitter LEDs, more advantage can be obtained by using ____________
a) BH structures
b) QC structures
c) DH structures
d) Gain-guided structure
Answer: c
39. Internal absorption in DH surface emitter Burros type LEDs is ____________
a) Cannot be determined
b) Negligible
c) High
d) Very low
Answer: d
40. DH surface emitter generally give ____________
a) More coupled optical power
b) Less coupled optical power
c) Low current densities
d) Low radiance emission into-fiber
Answer: a
41. In a multimode fiber, much of light coupled in the fiber from an LED is ____________
a) Increased
b) Reduced
c) Lost
d) Unaffected
Answer: c
42. The active layer of E-LED is heavily doped with ____________
a) Zn
b) Eu
c) Cu
d) Sn
Answer: a
43. The majority of the carriers in a p-type semiconductor are __________
a) Holes
b) Electrons
c) Photons
d) Neutrons
Answer: a
44. ____________ confinement is used to increase the carrier concentration recombination at the active region
a) Carrier
b) Optical
c)Electrical
d)Signal
Answer: a
45 ___________ is the ratio of electron-hole pairs generated to the incident photons
a)Power efficiency
b) Quantum efficiency
c)Signal efficiency
d)Carrier efficiency
Answer : b
Part B
4 Marks questions

1. Define Luminescence. Mention the types of luminescence

2. State the difference between luminescence and incandescence
3. Write the expression for the radiated power P in Injection Luminescence. Also Sketch the spectral distribution
of the radiated power P as a function of Eph
4. With the aid of neat diagram explain the phenomenon of Photoluminescence
5. Phosphorescence is also called as delayed fluorescence. Justify the statement. Also compare the features of
fluorescence and phosphorescence
6. With the aid of neat diagrams, explain the principle of Injection Luminescence and state the expression for the
emitted photon energy
7. State the phenomenon of Cathodoluminescence. Mention the applications of Cathodoluminescence
8. Contrast radiative and nonradiative recombination process
9. Explain the need of double heterostructure in LED and LASER's. Give its significance.
10. What are the basic LED configurations being used for fibre optics?
11. Define Quantum efficiency?
12. List the types and advantages of photodiode.
13. What is LASER? Describe its properties.
14. What are the direct-band gap and indirect band gap materials?
15. What are light source materials?
16. Define responsivity?
17. What is meant by impact ionization in APD?
18. What do you mean by avalanche effect?
19. What are the conditions required to achieve high signal to Noise ratio in a photodiode?
20. What are PIN Photodiodes?
21. What are the avalanche photodiode?
22. Difference between PIN photodiode and Avalanche photodiode?
23. State the threshold condition for LASER Oscillation.
24. Give the principle of phtotodetection.
25. Compare PIN and APD device.
26. Explain the phenomenon of optical pumping?
27. GaAs has Bandgap energy of 1.43eV at 3000 K. Determine the wavelength above which the photodetector
fabricated from this material cease to operate.
PART C
12 Marks Questions

1. Draw and explain the LED structures based Double Heterostructure configuration.
2. Discuss the principle of operation of LASER diodes.
3. Explain briefly the three key processes involved in the laser action.Describe for a FabryPerot resonator laser
diode, modes and threshold conditions. Obtain its rate equations for steady state output.
4. What type of materials are used for optical sources? What are the advantages of double Heterostructure?
5. Compare surface emitting and edge emitting LED structures.
6. Explain the basic LED configurations used as optical source. Derive the expression for quantum efficiency and
optical power generated in LED’s.
7. Draw the structure of Edge-Emitting LED and explain the operation.
8. Derive Einstein relationship and Threshold condition for Lasing action.
9. Sketch the structure of LASER and explain its working principle.
10. Explain in detail the Laser Diode structures and its Radiation Pattern.
11. With a neat sketch explain the principle and operation of PIN Photodiode.
12. With a neat sketch explain the principle and operation of Avalanche photodiode.
13. Discuss in detail the effect of the various noise mechanism in a photodetector and its signal to noise ratio.