FDA59N30 — N-Channel UniFETTM MOSFET

May 2014
FDA59N30
N-Channel UniFETTM MOSFET
300 V, 59 A, 56 mΩ
Features Description
• RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
• Low Gate Charge (Typ. 77 nC) MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
• Low Crss (Typ. 80 pF)
provide better switching performance and higher avalanche
• 100% Avalanche Tested energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Applications
• PDP TV
• Uninterruptible Power Supply

• AC-DC Power Supply

G
G
D TO-3PN
S
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter FDA59N30 Unit

VDSS Drain-Source Voltage 300 V
ID Drain Current - Continuous (TC = 25°C) 59 A
- Continuous (TC = 100°C) 35 A
IDM Drain Current - Pulsed (Note 1) 236 A
VGSS Gate-Source voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 1734 mJ
IAR Avalanche Current (Note 1) 59 A
EAR Repetitive Avalanche Energy (Note 1) 50 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 500 W
- Derate Above 25°C 4 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C

Thermal Characteristics
Symbol Parameter FDA59N30 Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 0.25
°C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max. 40

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDA59N30 Rev. C2
 FDA59N30 — N-Channel UniFETTM MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDA59N30 FDA59N30 TO-3PN Tube N/A N/A 30 units

Electrical Characteristics TC = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 300 -- -- V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 μA, Referenced to 25°C -- 0.3 -- V/°C
/ ΔTJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 300 V, VGS = 0 V -- -- 1 μA
VDS = 240 V, TC = 125°C -- -- 10 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 29.5 A -- 0.047 0.056 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 29.5 A -- 52 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 3590 4670 pF
f = 1 MHz
Coss Output Capacitance -- 710 920 pF
Crss Reverse Transfer Capacitance -- 80 120 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 150 V, ID = 59 A, -- 140 290 ns
tr Turn-On Rise Time VGS = 10 V, RG = 25 Ω -- 575 1160 ns
td(off) Turn-Off Delay Time -- 120 250 ns
(Note 4)
tf Turn-Off Fall Time -- 200 410 ns
Qg Total Gate Charge VDS = 240 V, ID = 59 A, -- 77 100 nC
VGS = 10 V
Qgs Gate-Source Charge -- 22 -- nC
(Note 4)
Qgd Gate-Drain Charge -- 40 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- 59 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 236 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 59 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 59 A, -- 246 -- ns
dIF/dt =100 A/μs
Qrr Reverse Recovery Charge -- 6.9 -- μC

Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.83 mH, IAS = 59 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 59 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.

©2005 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDA59N30 Rev. C2
 FDA59N30 — N-Channel UniFETTM MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

VGS
Top : 15.0 V
2
10.0 V
10 8.0 V 2
7.0 V 10
6.5 V
ID, Drain Current [A]

6.0 V

ID, Drain Current [A]

Bottom : 5.5 V

o
1
150 C
10 1
10
o
25 C
o
-55 C
※ Notes : ※ Notes :
1. 250μ s Pulse Test 1. VDS = 40V
2. TC = 25℃ 2. 250μ s Pulse Test
0
10 0
10
-1
10
0
10
1 10
2 4 6 8 10 12
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue

0.12

0.11
2
10
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

0.10
RDS(ON) [Ω ],

0.09

0.08 VGS = 10V

10
1 150℃
0.07 25℃
VGS = 20V
0.06
※ Notes :
0.05 1. VGS = 0V
※ Note : TJ = 25℃ 2. 250μ s Pulse Test

0.04 10
0

0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

12
9000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
10 VDS = 60V
Crss = Cgd
VGS, Gate-Source Voltage [V]

VDS = 150V
Coss VDS = 240V
8
6000
Capacitances [pF]

Ciss
6

3000 4
※ Note ;
1. VGS = 0 V
Crss
2. f = 1 MHz
2
※ Note : ID = 59A

0 0
-1 0 1
10 10 10 0 10 20 30 40 50 60 70 80

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

©2005 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDA59N30 Rev. C2
 FDA59N30 — N-Channel UniFETTM MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0
0.9 ※ Notes :
1. VGS = 0 V
※ Notes :
2. ID = 250 μ A 0.5
1. VGS = 10 V
2. ID = 29.5 A
0.8
-100 -50 0 50 100 150 200 0.0
-100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
o

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

3
10 70

10 μs 60
2
10 100 μs
1 ms
ID, Drain Current [A]

50
ID, Drain Current [A]

10 ms
100 ms
10
1
DC
40
Operation in This Area
is Limited by R DS(on)

10
0 30

※ Notes : 20
o
10
-1 1. TC = 25 C
o
2. TJ = 150 C
10
3. Single Pulse

-2
10 0
0 1 2
10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 11. Transient Thermal Response Curve

ZθJC(t), Thermal Response [oC/W]

D =0.5
-1
10
Zヨ JC(t), Thermal Response

0.2

0.1
※ N otes :
0.05 1. Z θ JC(t) = 0.25 ℃ /W M ax.
2. D uty F actor, D =t 1 /t 2
10
-2 0.02 3. T JM - T C = P DM * Z θ JC(t)
0.01
PDM
single pulse t1
t2
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , Square W ave Pulse D uration [sec]

©2005 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDA59N30 Rev. C2
 FDA59N30 — N-Channel UniFETTM MOSFET
VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
IG = const.
3mA

Charge

Figure 12. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off

Figure 13. Resistive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

V
10V
GS
GS DUT VDD VDS (t)
tp
tp Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

©2005 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDA59N30 Rev. C2
 FDA59N30 — N-Channel UniFETTM MOSFET
DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

©2005 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FDA59N30 Rev. C2
 FDA59N30 — N-Channel UniFETTM MOSFET
Mechanical Dimensions

Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65

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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2005 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FDA59N30 Rev. C2
 FDA59N30 — N-Channel UniFETTM MOSFET
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Rev. I68
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FDA59N30 Rev. C2
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