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    MOS Transistor

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    siva
    The document discusses field effect transistors including MOSFETs. It provides details on the construction, operation, and characteristics of n-channel and p-channel MOSFETs. Diagrams and equations are presented to illustrate the different regions of operation including cutoff, triode, and saturation regions.

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    © All Rights Reserved
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    MOS Transistor

    Uploaded by

    siva
    144 views21 pages
    The document discusses field effect transistors including MOSFETs. It provides details on the construction, operation, and characteristics of n-channel and p-channel MOSFETs. Diagrams and equations are presented to illustrate the different regions of operation including cutoff, triode, and saturation regions.

    Original Description:

    MOSFET operation

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    The document discusses field effect transistors including MOSFETs. It provides details on the construction, operation, and characteristics of n-channel and p-channel MOSFETs. Diagrams and equations are presented to illustrate the different regions of operation including cutoff, triode, and saturation regions.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    144 views21 pages

    MOS Transistor

    Uploaded by

    siva
    The document discusses field effect transistors including MOSFETs. It provides details on the construction, operation, and characteristics of n-channel and p-channel MOSFETs. Diagrams and equations are presented to illustrate the different regions of operation including cutoff, triode, and saturation regions.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 21

    Field Effect

    Transistors
    IBM/Motorola Power PC620

    Motorola MC68020
    IBM Power PC 601

    EE314

    1.Construction of MOS
    2.NMOS and PMOS
    3.Types of MOS
    4.MOSFET Basic Operation
    5.Characteristics

    Chapter 12: Field


    Effect Transistors

    The MOS Transistor


    Polysilicon Aluminum

    JFET Junction Field Effect Transistor


    MOSFET - Metal Oxide Semiconductor Field Effect Transistor
    n-channel MOSFET (nMOS) & p-channel MOSFET (pMOS)

    The MOS Transistor


    Gate Oxide
    Gate
    Source

    Polysilicon

    n+

    Drain
    n+

    p-substrate

    Bulk Contact

    CROSS-SECTION of NMOS Transistor

    Field-Oxide
    (SiO2)

    p+ stopper

    Switch Model of NMOS Transistor


    | VGS |

    Source
    (of carriers)

    Open (off) (Gate = 0)

    Gate
    Drain
    (of
    carriers)
    Closed (on) (Gate = 1)
    Ron

    | VGS | < | VT |

    | VGS | > | VT |

    Switch Model of PMOS Transistor


    | VGS |

    Source
    (of carriers)

    Open (off) (Gate = 1)

    Gate
    Drain
    (of carriers)

    Closed (on) (Gate = 0)


    Ron

    | VGS | > | VDD | VT | |

    | VGS | < | VDD |VT| |

    MOS transistors Symbols


    D

    G
    S

    NMOS Enhancement NMOS Depletion


    D

    G
    S

    PMOS Enhancement

    B
    S

    NMOS with
    Bulk Contact

    Channe
    l

    JFET and MOSFET Transistorsor

    Symbol

    L = 0.5-10 m
    W = 0.5-500 m
    SiO2 Thickness = 0.02-0.1 m
    Device characteristics depend on L,W, Thickness, doping levels

    MOSFET Transistor Fabrication Steps

    Building A MOSFET Transistor Using Silicon

    http://micro.magnet.fsu.edu/electromag/java/transistor/index.html

    It is done. Now, how does it


    work?

    n-channel MOSFET Basic Operation


    Operation in the Cutoff region
    pn junction:
    reverse bias

    iD=0

    for vGS<Vt0
    Schematic

    When vGS=0 then iD=0 until vGS>Vt0

    (Vt0 threshold voltage)

    n-channel MOSFET Basic Operation


    Operation in the Triode Region
    For vDS<vGS-Vt0 and vGS>Vt0 the NMOS is operating in the triode region

    Resistor like characteristic


    (R between S & D,
    Used as voltage controlled R)
    For small vDS, iD is proportional
    to the excess voltage vGS-Vt0

    n-channel MOSFET Basic Operation


    Operation in the Triode Region

    2
    i D K 2 v GS Vt 0 v DS v DS

    W KP
    K

    L 2
    Device parameter KP for
    NMOSFET is 50 A/V2

    n-channel MOSFET Basic Operation


    Operation in the Saturation Region (vDS is increased)

    Tapering
    of the
    channel
    - increments
    of iD are
    smaller
    when
    vDS is
    larger

    When vGD=Vt0 then the channel


    thickness is 0 and

    i D K v GS Vt 0

    n-channel MOSFET Basic Operation


    Example 12.1
    An nMOS has W=160 m, L=2 m, KP= 50 A/V2 and Vto=2 V.
    Plot the drain current characteristic vs drain to source voltage
    for vGS=3 V.
    2

    i D K 2 v GS Vt 0 v DS v DS
    i D K v GS Vt 0

    W KP
    K

    L 2

    n-channel MOSFET Basic Operation


    Example 12.1
    Characteristic

    Channel length
    modulation
    id depends on vDS in
    saturation region
    (approx: iD =const in
    saturation region)

    2
    i D Kv DS

    p-channel MOSFET Basic Operation


    It is constructed by interchanging the n and p regions of nchannel MOSFET.
    Symbol

    How does p-channel


    MOSFET operate?
    -voltage polarities
    -iD current
    -schematic

    Characteristic

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