EC302

Department of Technical Education
Andhra Pradesh
Name : R.Rama Rao
Designation : Lecturer.
Branch : Electronics & Communication Engineering.
Institute : Govt. Polytechnic (w), Bheemunipatnam,
Visakhapatnam Dist.
Year/Semester : Third Semester.
Subject : Electronics circuits-1
Subject Code : E.C-302
Topic : Transistor Amplifiers.
Duration : 50min.
Sub-Topic : Diode Compensation techniques
Teaching Aid : PPT. EC302.29 1
RECAP
Earlier we have studied about

 Selection of operating point
 Stability of operating point
 Different methods of biasing
EC302.29 2
OBJECTIVES
On completion of this topic student will be able to
understand
 Need for Bias compensation
 Types of Bias compensation
 Diode compensation
EC302.29 3
Need for bias compensation
• The operating collector current IC in a transistor amplifier
can be stabilized with respect to the variations in ICO, VBE


and by using any of the biasing circuits
• In certain cases due to negative feedback loss in signal
gain is intolerable which effect the operating point
• Using Compensation techniques drift of the operating
point can be reduced
EC302.29 4
• Stabilization techniques refer to the use of resistive
biasing circuits which permit IB to vary so as to keep IC
relatively constant
• Compensation techniques use temperature sensitive

devices to compensate for the variation in currents
• Often, a mixture of both the stabilization and

compensation techniques are used
EC302.29 5
Devices used to compensation
• Diodes
• Transistors
• Thermistors
• Sensistors
EC302.29 6
Compensation provided by Diodes
• Compensation for variations in Base – Emitter voltage
VBE. (Silicon transistors)
• Compensation for variations in reverse saturation current
IC0. (Germanium Transistor)
EC302.29 7
DOIDE COMPENSATION FOR VARIATIONS IN
BASE – EMITTER VOLTAGE VBE.
EC302.29 8
Diode compensation ckt for variations against VBE
Fig. 1
EC302.29 9
Equivalent circuit
Fig. 2
EC302.29 10
Working of the circuit
• The circuit utilizes the self Bias stabilization and diode
compensation using silicon transistor.
• The diode is kept forward biased by the source VDD and
resistor RD.
• The diode employed is of the same material and type of

the transistor to have the same temperature coefficient
(-2.5 mv/°c).
EC302.29 11
Circuit analysis
c
Applying kirchhoff’s voltage law to the base portion
• VTH = IBRTH + VBE + IERE - VD
• IE = IB + IC
• VTH = IBRTH + VBE + (IB + IC) RE–VD
= IB(RTH + RE) + ICRE + VBE -VD
EC302.29 12
Circuit analysis (contd)
IC = β IB + (1+ β)ICO
VTH =
[ IC – (1+ β)ICO
β ] (RTH + RE) + ICRE + VBE -VD
(I C[RTH + (1+β)RE ] =β [VTH – (VBE – VD )] + (1+β )ICO(RTH+RE
EC302.29 13
Circuit analysis (contd)
β [VTH – (VBE – VD)]+ (1+ β) ICO (RTH +RE)
Collector current IC =
RTH + (1+ β)RE
• Variations in VBE and VD are same due to temperature
variation.
• (VBE-VD) remains unchanged.
• Collector current IC becomes insensitive to variations in
VBE. EC302.29 14
DIODE COMPENSATION FOR VARIATION IN IC0
EC302.29 15
Diode compensation circuit against variations of ICO
Fig. 3
EC302.29 16
Working of the circuit.
• The figure shows the circuit using diode compensation

for a Germanium transistor.
• In Germanium transistors changes in reverse saturation
current IC0 with temperature variations cause change in
collector stability.
• The Diode D is used in the circuit of the same material
and type as the transistor.
EC302.29 17
Working of the circuit (Contd)
• The reverse saturation current of the transistor IC0 and
of the Diode I0, will increase with the increase in
temperature.
• From the circuit diagram
I = (VCC- VBE/R1 ≅ VCC/ R1 )
= Constant
EC302.29 18
• VBE is very small in comparison with the VCC.
• Since Diode is reverse biased by the VBE the current
through diode is the reverse saturation current I0.
EC302.29 19
• Base current IB = I - I0
∴ IC = βIB + (1+ β)IC0
= βI - βI0 +(1+ β) IC0
EC302.29 20
SUMMARY
• If β >>1
• If I0 and IC0 track each other in the desired temperature
range.
• Then IC remains constant.
• This is because the current flowing through the diode
and reverse saturation current of the transistor cancel

each other.
EC302.29 21
SUMMARY
• In order to avoid loss in signal gain due to negative

feedback compensation is required.
• Effects on VBE , β of a transistor by temperature are to be

compensated for better stability of the operation point of
the amplifier.
EC302.29 22
SUMMARY
• This bias compensation uses a diode for the variations

in VBE and IC0.
• The diode and transistors used should be of same type

and material
EC302.29 23
QUIZ
1. Loss in signal gain is due to
A) positive feedback
B) negative feedback
C) modulation
D) amplification
EC302.29 24
• Transistor used for compensation in VBE
A) Germanium
B) Silicon
C) Carbon
D) Teflon
EC302.29 25
• Transistor used for compensation in IC0
A) Germanium
B) Silicon
C) Carbon
D) Teflon
EC302.29 26
FREQUENTLY ASKED QUESTIONS
• What is bias compensation and why it is required?
• Explain with circuit diagram how the compensation is done

for variations in VBE due to temperature variations.
• Explain with circuit diagram how the compensation is done

for variations in IC0.
EC302.29 27

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Department of Technical Education

Earlier we have studied about

 Stability of operating point

 Different methods of biasing

On completion of this topic student will be able to

 Need for Bias compensation

 Types of Bias compensation

• The operating collector current IC in a transistor amplifier

can be stabilized with respect to the variations in ICO, VBE

• Compensation techniques use temperature sensitive

• Often, a mixture of both the stabilization and

• Compensation for variations in Base – Emitter voltage

VBE. (Silicon transistors)

• Compensation for variations in reverse saturation current

IC0. (Germanium Transistor)

• The circuit utilizes the self Bias stabilization and diode

compensation using silicon transistor.

• The diode is kept forward biased by the source VDD and

• The diode employed is of the same material and type of

• VTH = IBRTH + VBE + IERE - VD

• VTH = IBRTH + VBE + (IB + IC) RE–VD

= IB(RTH + RE) + ICRE + VBE -VD

β ] (RTH + RE) + ICRE + VBE -VD

(I C[RTH + (1+β)RE ] =β [VTH – (VBE – VD )] + (1+β )ICO(RTH+RE

• Variations in VBE and VD are same due to temperature

• (VBE-VD) remains unchanged.

• Collector current IC becomes insensitive to variations in

• The figure shows the circuit using diode compensation

of the Diode I0, will increase with the increase in

• From the circuit diagram

I = (VCC- VBE/R1 ≅ VCC/ R1 )

• VBE is very small in comparison with the VCC.

• Since Diode is reverse biased by the VBE the current

through diode is the reverse saturation current I0.

∴ IC = βIB + (1+ β)IC0

= βI - βI0 +(1+ β) IC0

• If I0 and IC0 track each other in the desired temperature

• Then IC remains constant.

• This is because the current flowing through the diode

and reverse saturation current of the transistor cancel

• In order to avoid loss in signal gain due to negative

• Effects on VBE , β of a transistor by temperature are to be

• This bias compensation uses a diode for the variations

• The diode and transistors used should be of same type

• What is bias compensation and why it is required?

• Explain with circuit diagram how the compensation is done

• Explain with circuit diagram how the compensation is done

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