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This document contains a list of 40 questions related to engineering physics II, including questions about: 1) The differences between drift velocity and thermal velocity of electrons. 2) Definitions of mean free path, mobility, relaxation time, and collision time. 3) Fermi energy level, Fermi distribution function, and their importance. 4) Calculations of drift velocity, electrical conductivity, and resistivity using properties of metals and semiconductors.

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Shyam Sundar
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109 views

Reg No

This document contains a list of 40 questions related to engineering physics II, including questions about: 1) The differences between drift velocity and thermal velocity of electrons. 2) Definitions of mean free path, mobility, relaxation time, and collision time. 3) Fermi energy level, Fermi distribution function, and their importance. 4) Calculations of drift velocity, electrical conductivity, and resistivity using properties of metals and semiconductors.

Uploaded by

Shyam Sundar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOC, PDF, TXT or read online on Scribd
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St.Josephs College of Engineering, Chennai - 119


St. Josephs Institute of Technology, Chennai 119
I Year B.E/B.Tech 2014-15 (Except Bio-Tech)
Cycle Test I
Sub. Code & Name: PH6251&Engineering Physics II Name:
Semester: II

Branch & Sec:

Max. Marks: 40

Time: 1hour 20 min

1)
2)
3)
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6)
7)

Write the differences between drift velocity and thermal velocity of an electron.
What are bound and free electrons?
Define mean free path and mobility of electrons.
Mention few special features of quantum free electron theory.
Define Relaxation time and Collision time.
Define Fermi energy level and give its importance.
Calculate the drift velocity of the free electrons [with a mobility of 3.5 x 10 -3 m2V-1s-1] in
copper for electric field strength of 0.5 V/m.
8) Use Fermi distribution function to obtain the value of F(E) for E-EF = 0.01eV at 200 K.
9) Calculate the electrical conductivity in copper if the mean free path of electron is 4x10 -8 m,
electron density is 8.4x1028 m-3 and average thermal velocity of electron is 1.6x106 m/s.
10) What is Lorentz number?
11) Distinguish between electrical conductivity and thermal conductivity.
12) Find the drift velocity of the free electrons in a copper wire whose cross sectional area is
1.0 mm2 when the wire carries a current of 1 A. Assume that each copper atom contributes
one electron to the electron gas. Given n = 8.5x1028 m-3.
13) Give the postulates of classical free electron theory.
14) Get the microscopic form of Ohms law and state whether it is true for all temperatures.
15) What are the sources of resistance in metals?
16) Define density of states. What is its use?
17) Define Fermi distribution function.
18) State Wiedemann Franz law
19) Find the relaxation time of conduction electrons in a metal of resistivity 1.54 x 10 -8 m, if
the metal has 5.8 x 1028 conduction electrons per m3.
20) Discuss the variation of resistivity of a conductor with respect to temperature.
21) State the properties of semiconductor.
22) What are the differences between indirect band gap and direct band gap semiconductors?
23) Explain the concept of hole.
24) Write an expression for electrical conductivity of an intrinsic semiconductor.
25) Sketch the Fermi energy level of an intrinsic semiconductor.
26) Define Hall coefficient and write the expression for it.
27) Mention the applications of Hall Effect.

28) A sample of n-type semiconductor with a current density of 50A/m 2 flowing across it, is
subjected to a transverse magnetic field of 0.2T. If the Hall field developed is 3x10 -4 V/m,
calculate the concentration of conduction electrons.
29) The intrinsic carrier density at room temperature in Ge is 2.37x1019m-3. If the electron and
hole mobilities are 0.38 and 0.18 m2V-1s-1 respectively. Calculate its resistivity.
30) What is meant by donor energy level?
31) Draw the graph for variation of Fermi level with temperature in N-type semiconductor.
32) Distinguish between n-type and p-type semiconductors.
33) If the effective mass of the electron is equal to twice the effective mass of the holes,
determine the position of the Fermi level in an intrinsic semiconductor from the centre of
forbidden gap at room temperature.
34) Given an extrinsic semiconductor, how will you find whether it is n-type or p-type?
35) Draw the graph for variation of Fermi level with temperature in p-type semiconductor.
36) Compared with Ge, Si is widely used to manufacture semiconducting devices. Why?
37) For intrinsic Ge at 300 K, ni = 2.4 x 1019/m3, e and h are 0.39 and 0.19 m2V-1s-1
respectively. Calculate the conductivity.
38) Find the resistance of an intrinsic Ge rod 1 cm long, 1 mm wide and 1 mm thick. The
intrinsic carrier density is 2.5 x 1019/m3 at 300 K and the mobilities of electron and hole are
0.39 and 0.19 m2 V-1 s-1 respectively.
39) Define Hall Effect.
40) A semiconductor crystal 12 mm long, 5 mm wide, and 1 mm thick has a magnetic flux
density of 0.5 Wb/m2 applied from front to back perpendicular to longest faces. When a
current of 20mA flows lengthwise through the specimen, the voltage measured across the
width is found to be 37V. What is Hall coefficient of the semiconductor?

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