1

101 MILESTONE PROBLEMS

These Milestone Problems are taken from our :

ISBN : 9789385576212
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1. The parallel RLC circuit shown below is

iR iL 4.3
ic
+
6 7H 1F
42 15 V
VC

7.5 V
6.8 k
(a) over damped (b) critically damped
–
(c) undamped (d) under damped
2. The voltage Vx in the circuit shown below is ________ V. 6. In the circuit of shown in the figure, LED will be ON if Vi.
22V 10 k
+ – + 10 470
–
A
+ +
10 10 k
2 11A Vx Vi
–

3. The periodic function shown in the figure below

(a) > 10 V (b) < 10 V
(c) > 5V (d) < 5V
A 7. The output of the circuit shown below will be of frequency
________ Hz.

Q Q Q
–T T T t
2 T T T
2 1 kHz
1 2 3
–A
8. Consider the CMOS circuit shown in figure. It acts as a

(a) is even and has no half-wave symmetry

VDD
(b) is odd and no half-wave symmetry
(c) is even and has half-wave symmetry
(d) is odd and has half-wave symmetry
4. Circuit of the given figure is an example of. V1 M3 M4 V2
+ VCC
M2
VO V0

M1

(a) current series feedback (b) current shunt feedback (a) Negative NAND (b) Positive NAND
(c) voltage series feedback (d) voltage shunt feedback (c) Negative NOR (d) Positive NOR
5. The best approximation for VC in the circuit shown in the 9. In 8085, if the clock frequency is 5 MHz, the time required
figure will be (assume to be high) ________ V. to execute an instruction of 18T - state is ________ sec.

10. Consider the following Ideal op-amp network.

 3

V2 = 2V + VA 2 x1 0 1 x1 0
u
(d) 5 4 x2 1
– x2
Ix

1
14. White noise with power spectral density is passed
2
through LPF with 3 dB cut-off frequency at c. The auto
– colleration of the output noise of the network.
V1= 1V + VB 2 2
c e j
(a) d
2 2 2
The value of VAB is ________ V. c
11. The low frequency gain of the low pass filter shown below
2
is ________ dB. c ej
(b) d
2 2 2
1000 k c

2
c e j
10 k 0.01 F (c) d
4 2 2
Vin – c
Vo
+
2
c e j
(d) d
4 2 2
c

s 2 15. A matrix of the matched filters is matched in different signals

12. If open loop transfer of a system is G(s) H(s) = (s 1)(s 1) s1(t) and s2(t). [s1(t) and s2(t)] are orthogonal.

then the number of poles in right half s-plane of the closed

loop system is ________. Filter Matched
to S1 Output 1
1 s –1 s –1 1
Input
13. u Y

–5
Filter Matched
to S 2 Output 2
–4
State equation for the above SFG is given by Then,
(a) The response of filter 2 is zero when input is S1(t)
x1 0 1 x1 0 (b) The response of filter 1 is zero when input is S2(t)
u
(a) 4 5 x2 1 (c) Both (a) and (b)
x2 (d) Neither (a) nor (b)
16. In the following circuit the maximum power transfer
condition is met for the load RL.
x1 0 1 x1 0
u 10 ix
(b) 4 5 x2 1
x2
ix

x1 0 1 x1 0 16 V + 3
u – 0.9 A RL
(c) 5 4 x2 1
x2 2
 4
The maximum power in watt is _________. 22. If ID = 0.5 mA, V1 = 5V and V2 = 2V, then the width-to-
17. In the circuit shown below, the current excitation iin (t) = length ratio required in each transistor is
4u(–t)A. The iL(t) for t 0 is
W W W
ix 400 L 1 L 2 L 3

iL (a) 1.75 6.94 27.8

(b) 27.8 1.75 6.94
iin 32 mH 200
400 (c) 6.94 27.8 6.94
(d) 1.75 27.8 6.94
23. For the op-amp circuit shown below the voltage gain
Vo
(a) 4e–5000tA (b) 2e–5000tA Av is ________.
Vi
(c) 6 – 4e–5000tA (d) 6e–5000tA
18. For the 2-port network circuit shown below the admittance
parameter matrix [ya] is R VA R VB R
R R
2 1 R
Vi –
Vo
1 +

2 24. In the op-amp series regulator circuit shown below Vz =

1
1 2 6.2V, VBE = 0.7V and = 60. The output voltage V0 is
________ V.

+ 36V V0
19 9 19 7
10 10 10 10
(a) (b) 1k
9 31 7 31 30 k
10 10 10 10 +
–
19 9 19 7
10 10 10 10
(c) (d)
9 31 7 31
10 k
10 10 10 10

19. DFT of sequence x(n) = {0, 1, 1, 0} is

(a) 2, 1 j, 0, 1 j (b) 0, 1 j,2, 1 j
25. Consider the circuit shown below. The transistor parameters
(c) 2, 1 j, 0, 1 j (d) 0, 1 j, 2, 1 j are = 120 and VA =
20. The hole concentration in p-type GaAs is given by
+ 5V
x
p 1016 1 cm 3 for 0 x L where L = 10 m.
L 4k

The hole diffusion coefficient is 10 cm2/s. The hole diffusion 250 k V0

current density x = 5 m is _________ A/cm2.
1
21. A transistor provide a transconductance of and +
13 Vs –
whose Is 6 10 16 A . The value of VBE for such transistor +
2V –
is ________ mV. (Take VT – 26mv)
 5

V0 (b) F A, B,C, D 0, 2, 4,5,9,10,11

The small signal voltage gain A v is
Vs
(c) F A, B, C, D 1,8,14,15
(a) – 2.38 (b) 2.38
(c) – 1.88 (d) 1.88 (d) F A, B, C, D 0, 2, 6,8,14,15
26. Consider a binary weighted n-bit D/A converter shown in 29. A certain linear time invariant system has the state and the
the following circuit of figure. What is the tolerance of output equations given below:
resistance to limit the output error to the equivalent of
1 x1 t 1 1 x1 t 0
LSB ? u t
2 0 1 x2 t 1
x2 t
Vref
x1 t
R 2R 4R n–1 y t 1 1
(2 )R x2 t
S1 S2 S3 S4 dy
R If x1(0) = 1, x2(0) = – 1, u(0) = 0, then dt is ________.
2 t 0
30. The maximum phase shift that can be provided by a lead

– 1 6s
compensator with transfer G s in degree is
V0 1 2s
+ ________.
31. Straight line Asymptotic Bode magnitude plot for a certain
system is shown in the given figure. What will be its transfer
function?
1 1
(a) (b)
2n 1 2n
20 log10 |G(j )|

40
– 20 dB/decade
1 1
(dB)

(c) (d) n 20 – 40 dB/decade

2n 1 2 1
27. Consider the following set of 8085 instructions
MVI A, 8EH (rad)
0.1 4 10 100
ADI 73H
JC DSPLY
s s
OUT PORT1 K 1 K 1
HLT (a) 4 (b) 4
2 s
DSPLY : XRA A s 1
1 10
OUT PORT1 10
HLT
The output at PORT 1 is ________ H. s
28. The boolean function realized by the following circuit is K 1
Ks 4
(c) (d)
2 2
0 s s s
1 1 s 1
4:1 4 10 10
C 1
D F 32. A baseband PCM system with a matched filter at receiver is
MUX
2 implemented with 5V bipolar pulse with a pulse duration
of 72 sec. If the noise PSD is 1.0 × 10 –4 V2/Hz, the
1 3 S S1 probability of error for this system is given by
0
(a) 3.5 × 10–5 (b) 1.15 × 10–5
A B (c) 3.5 × 10 –6 (d) 1.15 × 10–6
33. An FM modulator has output
(a) F A, B, C, D 1,3, 7,8,12,13,14,15
 6

t 39. An ideal ammeter is connected between terminal A and B

xc(t) = 200 cos ( ct + 2 Kf m d of the network shown below. The current through the
ammeter is ________ A.
0
where Kf = 30 Hz/V. The m(t) is the rectangular pulse 5 5
A
1
m(t) = 8 t 2 . The frequency deviation would be +
4 5 5
10 V
(a) 240 [u(t) – u(t – 4)] (b) 240[u (t + 4) – u(t)] –
(c) 140[u(t) – u(t – 4)] (d) – 140[u(t) – u(t – 4)]
34. A 8 cm × 4 cm waveguide is made of copper with = 5.8 × B
107 /m. The propagation constant for TE10 mode at f = 1.5 40. The value of the input impedance of the circuit shown below
fc is is ________ .
(a) 43.9 (b) j 43.9 3 –j4
(c) 23.48 (d) 23.48 + j 43.9 17
35. The sinusoidally time varying vector field 6

E 2 cos t 30 aˆ x 2 cos t 30 aˆ y is
(a) Elliptically polarized 3 j4
(b) Circularly polarized
(c) Linearly polarized
(d) Unpolarized
36. Consider the two fields, 41. A discrete time LTI system with impulse response
E = 120 cos(108 t – Bx)ay V/m 1
n
1
n
and H = A cos (108 t – Bx) az A/m h n u n u n 1
2 2
The value of A and B which will satisfy the Maxwell’s
The system is
equation in a linear isotropic, homogeneous loss. loss medium
(a) Non-causal and stable
with r = 8 and r = 2 will be
(b) causal and stable
A(in A/m) B(in rad/m) (c) Non-causal and unstable
(a) 1 0.0105 (d) casual and unstable
(b) 1 0.042 42. A 5-point sequence x[n] is given as
(c) 2 0.0105 x[–3] = 1, x[–2] = 1, x[– 1] = 0, x[0] = 5, x[1] = 1
(d) 2 0.042 Let X (ejw) denote the discrete time fourier transform of

37. If F 2x 2 3z ˆi 2xyjˆ 4xkˆ , then evaluate FdV , x ej d

V
x[n]. The value of is

where V is the region bounded by the planes x = 0, y = 0, z (a) 10 (b) 10

= 0 and 2x + 2y + z = 4 (c) 10 + j10 (d) 10 – j10

8 4 43. An ideal n-channel MOSEET has the parameters W = 30 ,

(a) (b)
3 3 2
n = 450 cm /V-s, L = 2 m, tox = 350A°, VTN = 0.8V. If
transitor is operating in saturation at VGS = 4V, then the
2 1 value of gm is ________ mS.
(c) (d)
3 3 44. In the circuit shown below zener voltage is VZ = 5V and
= 100. The value of VCEQ is ________ V.
dy
38. For xy given that y = 1 at x = 0, using Euler method
dx
taking the step size 0.1, the y at x = 0.4 upto 4 decimal
place is
 7
+ 12 V
+ 5V
IC2
25 A
500

47. Consider the following program

MVI A, BYTE 1
RRC
RRC
If BYTE = 32H, the contents of A after the execution of
program will be
45. The cut-in voltage for each diode in figure is VY = 0.6V (a) 08H (b) 8 CH
Each diode current is 0.5 mA. The value of R1, R2 and R3 (c) 12H (d) None of these
will be respectively. 48. The step size of the DAC of figure is 0.5V. The value of RF
is ________ k .

+ 10 V 1k
MSB
D RF
2k
C
Digital Input –
0V or 5 V 4k Vout
B
+
8k
A
LSB
R1
49. The open loop transfer function of a system is

+ 5V K
G s H s
1 s 1 2s 1 3s
R2
The phase crossover frequency c is ________ rad/sec.
50. Match List-I and List-II and choose correct answer using
0V
the codes given below the
List - I List - II
R3
A. DSB-SC 1. B 8 E
B. ISB 2. C 3 F
C. SSB-SC 3. H 3 E
– 5V D. VSB 4. A 3 E
5. J 3 E
Codes :
(a) 10 k , 5 k , 2.93 k A B C D
(b) 6 k , 3 k , 3.93 k (a) 4 3 2 1
(c) 5 k , 6 k , 4.933 k (b) 5 3 4 1
(d) 6 k , 8 k , 6.43 k (c) 2 4 5 2
46. The two transistor in figure below are identical. If = 25, (d) 4 1 5 2
51. A block diagram of an Armstrong FM transmitter is shown
the current IC2 is ________ A.
in figure. The parameter are as follows: f1 = 200 kHz,
fLo = 10.8 MHz, f1 = 25 Hz, n1 = 64, n2 = 48
 8
55. For the network shown below, the admittance transfer
Frequency
X
Frequency function is
m(t) NBFM x(t)
Multiplier Multiplier
K s 1
xnl ×n2 Y12
f1, t1 s 2 s 4

fL0
3
The maximum frequency deviation at the output of FM 2
i1 1 i2
transmitter is ________ kHz.
52. A potential field in free space is given by +
+
2F 1
V 40cos sin V V1 2F 6 V2
r2 3 –

–
Point P(r = 2, ,
) lies on a conducting surface.
2 3
The equation of the conducting surface is The value of K is ________.
(a) 32 cos sin = r3 (b) 16 cos sin = r3 56. Circuit shown in given figure the value of Vth and Rth are
(c) 16 cos sin = r 3 (d) 32 cos sin = r3

53. The Z-parameters of the network shown below is 4V

– +
2 +
1 2
1 5 Vth, Rth
0.1 V1 V1

1 –

1 2
2 (a) 8V, 5 (b) 8V, 10
(c) 4V, 5 (d) 4V, 10
57. A junction transistor operating at room temperature with
3 1 IC = 2mA; where KT/q = 25 mV has = 100. The value of
1 0
2 2 parameters gm in mho and rs in ohm will be respectively.
(a) 1 1 (b) 1 3
2 2 (a) 0.04 and 2500 (b) 0.08 and 1250
2 2
(c) 0.5 and 800 (d) 0.8 and 5000
58. In series voltage regulator given below, VBE = 0.7, and =
3 1 3 50, VZ = 8.3 V. Value of output voltage across 50 k
0
2 2 2 resistance is ________ V.
(c) 1 2 (d) 1 1
Vin = + 25V
2 3 2 2
Vout
54. In the following circuit the current source 6mA has been 220
applied for a long time before the switch opens at t = 0. The 20 k 50 k
current iL (0+) is ________A.

R t=0
iL 50 30 k
6mA 2R L 7R
59. For the circuit shown below, if breakdown voltage of zener
diode (Vz) is 10V, then the value of voltage across 1.2 k
 9
resistance is ________V.
1k C 0
0 1 4×1 F
+ C 2
16 V 1.2 k Vout
– 1 3

60. Which of the following is true, for the cascading to be in

saturation? A B
VDD 5V, R D 5k , V1 3V, VGS VGS 2V,Vth 1V ,
1 2 1

Vth 2 1.5V I0 0
2×1 F
VDD
I1 1
ID So

RD A
For F to be same in both the multiplexers, I 0 and I1
V0 respectively are
(a) B C, B C (b) BC, AB
(c) B C, B + C (d) BC , B + C
V1 M1 63. Consider the following set of instruction
MVI A, BYTE 1
RLC
MOV B, A
RLC
V2 M2 RLC
ADD B
If BYTE 1 = 07H, then content of A after execution of
program will be
(a) 46 H (b) 70 H
(c) 38 H (d) 68 H
(a) ID (max) = 0.6mA 64. The value of gain margin in the Nyquist diagram given
(b) ID (min) = 0.6mA below is __________.
(c) ID (max) = 1mA
(Im)
(d) ID (min) = 1mA
61. If Vc max = 2.5 V, I = 40 pA (leakage current) and C = 20 × 10– w=3
15 F, then the time required for refreshing the DRAM is

________ ms.

Word line 1 0.5 0.33 jw (Re)

Bit
line w=2
w=1
–1
C1
65. For unity feedback system as in given figure, transfer
M1 function is
20 s 3 s 4 s 8
G s
62. Consider the multiplexers shown below. s 2 s 2 s 15
 10
(a) 46 – j69 (b) 39 – j57
R(s) + E(s) C(s)
G(s) (c) 67 + j48 (d) 61 + j52
70. In the following lattice network the value of RL for the
–
maximum power transfer to it is ________ .

H(s) = 1

If input is 30t2, then steady state error is ________.

66. The forward-path transfer function of a unity feedback
system is
K s 1 s 2
G s
s 5 s 6
The break points are 71. Measurement made on terminal ab of following circuit yield
Break-in Break away the current– voltage characteristics shown in figure. The
thevenin resistance is _______ .
(a) – 5.437 – 1.563
(b) – 1.563 – 5.437 I
(c) – 1.510 – 2.715
(d) – 2.715 – 1.510
67. Consider an on-off keying IF modulated signal which is 30
detected by an ideal matched filter receiver. The non zero
20
symbol at the matched filter receiver input is a rectanglular
pulse width with A = 100 mV and T = 10 m/sec. The noise 10
at this point is known to be white and gaussian and has an
V
rms value of 140 mV as measured in a noise band width of
–4 –3 –2 –1 0 1 2
10 kHz. The average energy per symbol and noise PSD is
given by a
(a) 5.0 × 10–5, 1.96 × 10–6 V2/Hz Resistive +
Network Vab
(b) 2.5 × 10–5, 2.48 × 10–6 V2/Hz –
b
(c) 2.5 × 10–5, 1.96 × 10–6 V2/Hz
72. The fourier series coefficient for the periodic signal x(t) =
(d) 5.0 × 10–5, 2.48 × 10–6 V2/Hz sin2t is
68. A rectangular air filled waveguide has cross-section of 4 1 1 1
cm × 10 cm. The minimum frequency which can propagate (a) k 1 k k 1
4 2 4
in the waveguide is ______ GHz 1 1 1
68. The electric field of a uniform plane wave is given E = 10 (b) k 2 k k 2
4 2 4
sin (10 t – z) â x + 10 cos ( t – z) â y (V/m). The 1 1
(c) k 1 k k 1
2 2
polarization of the wave is
(a) Circular (b) Elliptical 1 1
(d) k 2 k k 2
(c) Linear (d) Undefined 2 2
69. Three lossless lines are connected as shown below. The input 73. The drain of an n-channel MOSFET is shorted to the gate
so that VGS = VDS. The threshold voltage (VT) of the
impedance Zin at A is
MOSFET is 1V. If the drain current (ID) is 1 m A for VGS =
2V, then for VGS = 3V, ID is _________ mA.
A B C 74. Consider the basic three transistor current source in figure
below. Assume all transistor are matched with finite gain
Z0 = 50 Z0 = 100 Z0 = 75
Zin ZL 60 – j35s early voltage VA = . The expression for Io is

5 /8 3 /4 /2
 11
(d) 4 3 1 2
+
V 77. Consider the system shown below.
+ + C(s)
I0 R(s)
G1 G2
Iref R1 + +

The input output relationship of this system is

(a) R(s) G1 G2 C(s)

V (b) R(s) 1 + G1 + G1 G2 C(s)

Iref Iref
(a) (b) (c) R(s) 1 + G2 + G1 G2 C(s)
2 1
1 1
1 2
(d) R(s) G1 + G2 C(s)
Iref Iref 78. Consider a ufb system with forward path transfer function
(c) (d)
2 2 k
1 1 G s .
1 2 s 15 s 27 s 38
75. For the transistor shown below, = 50. The value of voltage The system will oscillate for the value of k equal to_____.
VEC is 79. In the Bode-plot of a unity feedback control system, the
+9V value of magnitude of G(jw) at the phase crossover
1
frequency is
. The gain margin is __________.
2
1 mA 80. A message signal is shown below:
m(t)

10

50 k
4.7 k
1 3 4 t
If m(t) is frequency modulated on a carrier with frequency
–9V 106 Hz with a frequency deviation constant Kf equal to 5Hz/
(a) 3.13 V (b) 4.24 V v, the maximum instantaneous frequency of the modulated
(c) 5.18 V (d) 6.07 V signal is
(a) 5 Hz (b) 1.5 MHz
76. Match List-I (pre terminals) with List-II (Applications) and (c) 2.5 MHz (d) 3 MHz
select the correct answer using the code given below the 81. The E-field of a uniform plane wave propagating a dielectric
list: medium is given by
List-I List-II z z
8
A. SID, SOD 1. Wait state E = 2 cos 10 t ux sin 108 t u y V/m
B. Ready 2. Interrupt 3 3
C. TRAP 3. Serial data transfer The dielectric constant of medium is _______.
D. ALE 4. Memory or I/0 read/ 82. In the circuit of figure below, the ideal alternaly switch at
position A for 1 ms and at position B for 4 ms. The average
write
value of current i(t) is _______mA.
5. Address latch control
Code:
A B C D
(a) 3 1 5 2
(b) 3 1 2 5
(c) 4 3 2 5
 12
5k The range of possible load current and load resistance are
A
(a) 5 iL 130 mA; 60 RL 372
S (b) 25 iL 120 mA; 40 RL 192
(c) 10 iL 110 mA; 60 RL 200
10 k (d) None of these
87. For the circuit shown below, let = 60. The value of VECQ
i(t) B
is _______ V.
+– 5V
+5V +10V

83. The mesh equations for the following circuit are

20 40 5 i1 v1 10 k 2k
15 65 25 i 2 v2
5 25 35 i3 0

R1

R2 i R3 20k 2.2 k
3

i1 i2
V1 + R4 –5V –10V
– +
– – V2 88. The following circuit, transistors Q 1 and Q3 has the
+ 25i2
following parameters
The value of R4 is _______ .
84. In a particular semiconductor the donor impurity W W
20;
concentration. is Nd = 1014 cm–3. Assume the following L 1 L 2
parameters. (VTH)1 = (VTH)2 = 1V;
T
3/ 2 (K n)1 = (K n)2 = 100 A/V2
2 19 cm–3,
n = 1000 cm /V–s, NC = 2 × 10 300 + 5V + 5V
3/ 2
T
Nv = 1019 cm–3, Eg = 1.1 eV..
300
An electric field of E = 100V/cm is applied. The electric 40 k 40 k
current density at 300 k is _______ A/cm2. V1 V2
85. An n–n isotype doping profile is shown below. The built-in
potential barrier is_______ eV. (n i = 1.5 × 1010 cm–3)
M1 M2
–3
Nd (cm )
16
10
V3
15
10 200 A

O
86. In the voltage regulator circuit shown below the zener diode The voltage V1, V2 and V3 respectively are
current is to be limited to the range 5 iz 100 mA. (a) 1V, 1V, – 1.1V (b) 1V, 2V, 1V
12 (c) 2V, 1V, 1.32V (d) 1V, 1V, – 1.32V
89. If an amplifier with gain of 1000 and feedback of = – 0.1
iz iL had a gain change of 20% due to temperature, the change in
Vz = 4.8V gain of feedback amplifier would be
Rz = 0 (a) 10% (b) 5%
RL
+ (c) 0.2% (d) 0.01%
6.3 V – 90. In series circuit for resonance, the value of coupling
coefficient is _________.
 13
HLT
K
The output at PORT 1 is _______H.
94. Block diagram of a position control system is shown below.

24 –j 18 j 12 j3 + 1
R(s) +
Ka s(0.5 s + 1) C(s)
91. In figure, J and K inputs of all four flip-flops are made high. – –
The frequency of the signal at output F is ______ Hz.
sKt

F
J Q J Q J Q J Q
If Kt = 0 and Ka = 5, the steady state error to unit ramp
CLK CLK CLK CLK
input is _______.
F = 10 kHz K Q K Q K Q K Q
95. In the following state equation, u is the unit step input
CLR CLR CLR CLR
2 0 1
x x u
3 1 2

92. In the given circuit as shown below, S2 to S0 are LSBs.

Select lines and X2 and X0 are inputs lines. So and X0 and
LSBs. The output Y is

X7

X6
1
X5 Y y = [0 1] x, x (0) = 0
X4
The output y(t) is
X3
1
X2 (a) + e–3t sin4 t + 2 e–3t cos4 t
X1 S2 S1 S0 3

1 X0 1 t 1 2t
(b) e e
2 2

1 e 2t
(c) e 3t sin 3t cos 4 t
1 C B A 3 3
(d) None of these
96. A narrowband FM signal has a carrier frequency of 100
(a) A B
KHz and a deviation ratio is 0.1. The modulation bandwidth
(b) B A
is 500 Hz. This signal is used to generate a wideband FM
(c) B (A B) + C (A C)
signal with a deviation ratio of 5 and a carrier frequency of
(d) C. A B C. A B 85 MHz. The scheme utilized to accomplish this is shown
93. Consider the following 8085 assembly program in figure.
MVI B, 89 H
MOV A, B
MOV C, A ×n
NBFM Frequency BPF Xc(t)
MVI D, 37H
Multiplier FLO
OUT PORT 1 Mixer
~
 14
The required value of frequency multiplication is _______. by the antenna is _______ W.
97. A voice grade channel of the telephone network has a 100. The plane wave E = 42 cos ( t – z) x V/m in air normally
bandwidth of 3.4 kHz. hits a lossless medium ( = 1, r = 4) at z = 0. The reflected
The information capacity of the telephone channel for a SNR electric field is
of 30 dB will be (a) –14 cos ( t – z) ux V/m
(a) 10.2 × 103 bits/second (b) 16.4 × 103 bits/second (b) –14 cos ( t + z) ux V/m
(c) 23.5 × 103 bits/second (d) 33.9 × 103 bits/second (c) 14 cos ( t – z) ux V/m
98. The minimum step-size required for a Delta-Modulator (d) 14 cos ( t + z) ux V/m
operating at 32 k samples/sec to track the signal
dz
x(t) = 125 [u(t) – u(t – 1)] + (250 – 125t) [u(t – 1) – u (t – 2)] 101. Evaluate ,
z 2
2z 2 where c is the source having
so that slope overload is avoided, would be c
(a) 2–10 (b) 2–9 vertices at (0, 0), (–2,–2), (–2, 0) and (0, –2) oriented in the
(c) 2–6 (d) 2–4 anticlockwise direction.
99. A transmission line having a characteristic impedance of (a) (b) 2 i
(c) i (d) –
300 is feeding a dipole antenna. Frequency of operation
is 100 MHz and length of dipole antenna is 1.48 m. If pout
from the transmission is 100 W, then the power transmitted
 15

HINTS & SOLUTIONS

1. (a) For parallel RLC circuit 6.8
IC 1mA
6.8
1 L Since, is high so IB is negligible.
2R C
IC I E
VC = 15 – 4.3 × 1 = 15 – 4.3 = 10.7 V
1 7
2 6 1 10 10 100
6. (c) VA 5V (by voltage divider)
42 10 10 20
Vi > VA i.e. output of the comparator is 1 (ON), then
1 LED will be ON.
= 7 7 6 7. 125
12
fin = 1 kHz = 1000 Hz
7 6 1000
= 1.428 f1 500Hz
12 2
Here, > 1. Hence, overdamped.
500
2. 0 f2 250Hz
2
On applying superposition theorem
Case 1: 250
f3 fout 125Hz
2
22V
+ – 8. (a) V1 V2 M1 M 2 M3 M4 V0
0 0 OFF OFF ON ON VDD
+ 0 VDD OFF ON ON OFF VDD
10 Vx
2 –1 VDD 0 ON OFF OFF ON VDD
VDD VDD ON ON OFF OFF 0

Hence, CMOS is NAND gate with negative.

22 10 220 9. 3.6
Vx Time required to execute an instruction is given by
1 2 10 12
Case 2: 1
t No. of T states
f
1
+ = 18 = 3.6 × 10–6 sec = 3.6 sec
11A 10 Vx2 5 106
2 – 10. 3
2 1
Ix 1A
1
2 11 22
I10 A VA 2 VB 1
2 10 12 Ix
220 2 2
Vx 2 10 I10 VA – 2 – (VB – 1) = 2Ix
12
VA – VB – 2 + 1 = 2
220 220 VA – VB = 3V
Vx Vx1 Vx 2 0V
12 12 11. 40
3. (d) Given function is an odd function with half-wave
symmetry.
4. (d)
5. 10.7
7.5 – 0.7 = 6.8 IC
 16

1000 k 1 x2 s –1 x1 s –1 x1 1
u Y

–5
Vin –
10 k Vo –4
+
x1 x2

x2 4x1 5x 2 u
For low pass filter, capacitor as a open circuit.
RF 1000 x1 0 1 x1 0
Av 100
R1 10 u
4 5 x2 1
|Av| = 100 x2

2
12. 0 14. (d) G n 0 Gni H
s 2
G s H s 1
s 1 s 1 H
j
1
j 2 c
G j H j
j 1 j 1
n 1
G n0
2 2 2
4
G j H j 1
2 1 2 1 c

G j H j tan 1 tan 1 tan 1 R F 1 Gn

0
2 1
– tan –1 – 180 – tan–1 2
c 1 ej
= d
G j H j G j H j 2 2 2 2
c
0 2 180
2
0 270 c ej
= 4 d
2 2
Im c
– 270° 15. (c) As matched filter 2 is matched to S2. It will not effect
to 1.
As matched filter 1 is matched to S1. It will not effect
to 2.
0° So, S1(t) and S2(t) both should be orthogonal.
Re
– 180° – 2 – 1 + j0 16. 0.75

10 ix
ix 2 A
– 90°
N=–1 +
P=1
N= Z–P 16 V + 0.9 A
– 3 VOC
–1=Z–1
Z= 0 –
13. (a)

On applying KCL at node (A)

16 VA
0.9 10i x
2
 17

16 VA 400
ix
2 iL = 0
ix + 0.9 = 10 ix
9ix = 0.9 400 200
OA
0.9
ix 0.1A 32 mH
9
VOC = 3 × 10ix = 3 × 10 × 0.1 = 3V For t = 0+
For isc iL(0+) = 0A = iL( )
Req = (400 + 400) || 200
10 ix
ix 2 800 200 800 200
R eq
800 200 1000
Req = 160
16 V + L = 32 mH = 32 × 10–3 H
– 0.9 A isc
t
iL t iL 0 iL e i

isc = 10ix = 10 × 0.1 = 1A t

= 2 0 e L/R 0
VOC 3
R th 3
iSC 1 t 160
= 2e 32 10 3
Vth = VOC = 3V
RL = Rth = 3 i(t) = 2e–5000t A
2
18. (b) The given circuit can be broken as
Vth 9 3 2 1 2
Pmax 0.75W
4R L 4 3 4
1 1
1
u(– t) 2
17. (b)

1 1 3
z11 2 1 3 y11 1
2 2
1 5
z 22 1 1 2 y22 2
2 2
400 1
z 21 z12 1 y12 y 21
2
3 1
4A 400 iL = 2A 3 1 yb 2 2
za 1 5
1 2
2 2
1 2 1 1 2 1
For t = 0– ya ya
za 1 3 5 1 3
4
iL 0 2A 2 1
2
5 5
ya
iL 0 2A 1 3
5 5
2 1 3 1 19 7
5 5 2 2 10 10
y ya yb
1 3 1 5 7 31
5 5 2 2 10 10
 18
19. (a) N = 4
g m VT
2 kn 2 kn VBE VT n
N 1 3 Is
X k x n e N x n e 4
k 0 k 0 1
26 10 3
3 VBE 26 10 3
n 13 749.7mV
X 0 x n e0 x 0 x 1 x 2 x 3 6 10 16
n 0
=0+1+1+0=2 22. (a) Here, all three transistor are in saturation because
VDS = VGS, and also VDS > VGS – VTN.
3 2 n 3 n For M3.
X 1 x n .e 4 x n .e 2
VGS3 VG 3 VS3 VG 3 V2 2V
n 0 n 0
3 Kn W 2
ID VGS3 VTN
x n cos n jsin n 2 L 3
n 0
2 2
= x(0) – jx(1) – x(2) – jx (3) 36 10 6 W 2
10 3 0.5 2 1
x(1) = – j – 1 2 L 3
3 2 2 n 3
x 2 x n .e 4 x n .e n W 103
27.78
n 0 n 0 L 3 36
3 For M2
x 2 x n cos n jsin n VGS2 VG 2 VS2 V1 V2 5 2 3V
n 0
x(2) = x(0) – x(1) + x(2) – x(3) 36 10 6 W 2
0.5 10 3 3 1
x(2) = – 1 + 1 = 0 2 L 2
3 2 3 n 3 3
n W 103
x 3 x n .e 4 x n .e 2 6.94
n 0 0 L 2 36 4
For M1
3
3 3 VGS1 5 V1 10 5 5V
x 3 x n cos n jsin n
n 0
2 2
x(3) = x(0) + jx(1) – x(2) – jx(3) = – 1 + j 36 10 6 W 2
0.5 10 3 5 1
20. 16 2 L 1
dp d x
J eD p eD p 1016 1 W 103
dx dx L 1.736
L 1 36 16
1 1.6 10 19 10 1016 23. – 8
J eDp 1016
L 10 10 4 From the given figure
J = 1.6 × 10–19+20 = 1.6 × 10 = 16 A/cm2 Vi 0 0 VA
21. 749 – 750 ...(i)
R R
IC 0 VA VA VA VB
gm
VT ...(ii)
R R R
VBE
VA VB VB VB V0
IC Is e VT ...(iii)
R R R
VBE Now, adding (i), (ii) and (iii)
g m VT Is e VT Vi – VA + VA – VB = – VA + VA + VA – VB + VB + VB –
V0
VBE g m VT Vi – VB = VA + VB – V0 ...(iv)
n From equations (ii)
VT Is
– VA = VA + VA – VB 3VA = VB ...(v)
 19
Now, for equations (iv) and (v)
x n x
Vi – 3VA = VA + 3VA – V0 .2 1
100 100
Vi = 7VA – V0 ...(vi)
Now, from equations (vi) and (i) x 1
2n 1 1 x
n
100
Vi = – 7 Vi – V0 100 2 1
8 Vi = – V0 27. 00
V0 MV1 A, 8EH ; Move content 8EH in A
Av 8 ADI 3H ; Add 73 H with accumulator content
Vi
i.e., 8EH + 73H A = 01H, CY = 1
24. 24.8 JC DSPLY ; CY = 1, Jump on
VZ = 6.2 V OUT PORT 1
10 V0 HLT
Vz DSPLY : XRA A ; Clear the content of accumulator
10 30
A.
V0 OUT PORT 1 ; Show 0H at PORT 1.
6.2
4
28. (a) B A F
V0 = 4 × 6.2 = 24.8 V
0 0 D
2 0.7
25. (c) IB 5.2 10 6 A 5.2 A 0 1 CD
250
1 0 CD
IC IB 120 5.2 10 6 A 0.624mA 1 1 1
IC 0.624
gm 24.09mA F A BD ABC D ABCD AB
VT 0.0259
F A B C C D ABC D ABCD AB C C
VT
r
IC F ABCD ABCD ABCD ABCD ABC ABC (D D)
120
r 4.98k F A BCD A BCD ABCD ABCD ABCD ABCD +
gm 24.09
ABC D ABC D
r 24.09 4 4.98
AV gmR C CD
r RB 4.98 250
AB
479.87 CD CD CD CD
AV 1.88
254.98 1
1
1 AB 0 1 3 2
26. (a) Required error in MSB LSB
2 1
Let AB 4 5 7 6
x% is the tolerance in resistance
1 1 1 1
V V 1 V AB 12 13 15 14
.
R x 2 2 1R
n
R 1
100 1 8 9 11 10
AB

1 1 F A, B, C, D 1,3, 7,8,12,13,14,15
1
1
x 2n 29. 1
100 y(t) = x1(t) + x2(t)
dy t
x x1 t x2 t ...(i)
dt
100 1
1
x 2n x1 t x1 t x2 t ...(ii)
100
x2 t x2 t u t ...(iii)
 20
From equations. (i) and (ii) and (iii), we get
s
dy t K 1
x1 t x2 t x2 t u t 4
dt Therefore, G s 2
s
s 1
dy t 10
x1 t u t
dt 32. (b) PC for PCM system with matched filter
dy t 1/ 2
x1 0 u 0 1 0 1 Eb
dt Pc erfc
t 0 2 N0
dy t where, Eb = V2Tb = 25 × 72 × 10–6 = 1.8 × 10–3
1
dt
t 0 N0
1 10 4 N0 2 10 4
30. 30 2
1 6s 1/2
G s
1 2s 1 1.8 10 3
Pc erfc 1.15 10 5
2 4
1 6j 2 10
G j
1 2j
t
G j tan 1 6 tan 1 2 33. (c) t 2 Kf m d
0
d 6 2
d 1 36 2 1 4 2 Frequency deviation = Kfm(t) = 30 × 8
1
t 2
For maximum 4
d 1
0 240 t 2 240 u t u t 4
d 4
6 2 2 2
0 c m n
2
1 36 1 4 2 34. (b) fc
2 2 2 a b
3 (1 + 4 ) = 1 + 36
3 + 12 2 = 1 + 36 2 c 1
2 = 24 2 fc =
2 a
2 1
3 108
12 fc 1.875 109 1.875GHz
2 0.08
1 1 1 f = 1.5; fc = 2.8 × 109 Hz
12 4 3 2 3
2 2 2
m n
6 2
tan 1 tan 1 a b c
2 3 2 3
2 2
1 2 2.8 109
tan 1 3 tan 1 =
3 0.08 3 108
f = 60° – 30° = 30°
= j43.9
31. (d) Initially – 20 dB/decade shows that there is one pole
at origin. 35. Ex 2 cos t 30
At = 4 indicates 0 dB/decade, it means – 20 dB/
decade + 20 dB/decade = 0 dB/decade i.e., one zero Ey 2 cos t 30
at = 4
At = 10 indicates – 40 dB/decade, it means 0 dB/ Ex Ey
decade = 20 dB/decade – 20 dB/decade = – 40 dB/
Hence, wave is elliptically polarized.
decade
i.e., two pole at = 10
 21

E 120 Now, circuit can be redrawn as

36. (d) As,
H A Itotal 5 5
A
0 r 120 r
+
0 r r
10 V 5
2 120 –
120 60
8 2 B
120 120
A 2
A 60 5 5 25
Re q 5 || 5 5 5 5 7.5
106 5 5 10
B
10
Itotal 1.33A
1 1 3 108 7.5
3 108 m/s
2 8 4 5 I total
I AB [By current divider rule]
5 5
106 4
B 0.042 5 1.33
3 108 I AB = 0.665A
10

37. (a) F iˆ ˆj kˆ 2x 2 3z iˆ 2xykˆ 4xkˆ Zin

17
3 j4 || 3 j4
x y z 40.
6
F 4x 2x 2x 17 3 j4 3 j4
2 2 x 2x 2y 4 6 3 j4 3 j4
FdV 2x dz dy dx 17 9 16
V x 0y 0 z 0 6 6
2 2 x 17 25 42
4 2x 2y 8 Zin 7
2 x z0 dy dx 6 6
3
x 0y 0
41. (b) u[n]

38. 1.0610 – 1.0612

1
x: 0 0.1 0.2 0.3 0.4
Euler’s method gives
yn 1 yn hf x n , y n n
n=0
y1 = y0 + h(x0, y0) = 1 + 0.1f(0, 1) = 1 + 0 = 1 u[n – 1]
y2 = y1 + hf(x1, y1) = 1 + 0.1f(0.1, 1) = 1 + 0.1 × 0.1 =
1.01
y3 = y2 + hf(x2, y2) = 1.01 + 0.1f(0.2, 1.01) = 1.01 +0.0202 1
= 1.0302
y4 = y3 + hf(x3, y3) = 1.032 + 0.1f(0.3, 1.0302) = 1.0302
+ 0.03090
y4 = 1.0611 n
39. 0.66 — 0.67 For n < 0
An ideal Ammeter has zero resistance. u[n] = 0
5 5 u[n – 1] = 0
A h[n] = 0 for n < 0: causal
n n
+ 1 1
h n u n u n 1
10 V 5 2 2
–
B
 22

n n 30 450
h n
1
u n
1
u n 1 ID sat 9.86 10 8 VGS VTN
2 2 2 2
n n
2
n n = 3.33 10 4 VGS VTN
1 1
= ID
n 0
2 n 1
2 gm 6.66 10 4 VGS VTN
VGS
0 1 2 2 3
1 1 1 1 1 1 = 6.66 10 4 [4 0.8]
= ... ...
2 2 2 2 2 2 = 21.31 × 10–4
= 2.13 × 10–3 S
2 4 6 = 2.13 mS
1 1 1
=1 .... 44. 5.6 – 5.8
2 2 2
12 = 500 (IC + IB) + VZ + VBE
1 2 2 12 = 500 IE + 5 + 0.7
= 2 500 IE = 12 – 5.7 = 6.3
1 2 1 1
1 6.3
2 IE 0.0126A 12.6mA
500
h n : Stable VCE = VC – VE = VC

42. (b) X ej e3j e j2 0 5 e j 12 VC 500 I E 0.5 103 12.6 10 3

12 VC 6.3
VC 12 6.3 5.7V
eaj d 0 ; if a 0
45. (a)

ej 10V
X d = e3j e j2 5 e j d
0.5 mA

e j3 e j2 e j 0.6V
= 5
3j 2j 1j

ej e j2 e j R1
= 5 5V 0.6 V
3j 2j j
VA
e j3 e j2 ej 0.5 mA
5 1 mA
3j 2j j

R2
e j3 e j3 e j2 e j2 ej e j
= 10
3j 2j j 0.6 V
0V
2 VB
= sin 3 sin 2 10 2 sin 1.5 mA
6 0.5 mA
= 0 + 0 + 10 + 0 R3
= 10
43. 2.10 - 2.15 –5V

I0 sat n Cox W V VTN

2
GS – 5 + 0.6 + VA = 0
2 L
VA = 4.4 V
3.9 8.85 10 14 0 + 0.6 + VB = 0
Cox = 0.986 × 10– 14 + 7 VB = – 0.6 V
350 10 8 – 10 + 0.6 + R1 × 0.5 + VA = 0
C ox = 0.986 × 10–7 = 9.86 × 10–8 F/cm2
9.4 4.4 5
R1 10k
0.5 0.5
 23

VA VB 4.4 0.6 3 c
R2 5k tan tan 1 3 c
1 1 1 2 c2
VB 5 0.6 5 4.4 3
R3 2.93k 3 c
1.5 1.5 1.5 1 2 2c
46. 23.10 – 23.20
25 A = IC1 IB1 IB2
25 1 2 2c 1
For identical transistors
2 2 c2
VBE1 VBE2 VBE
2
c 1
VC2 VC1
c 1 1rad / sec
IB1 IB2 50. (d)
51. 76.50 – 77.00
25 IC2 2IB2 f = ( f1) n1n2 = 25 × 64 × 48 = 76800 Hz = 76.8 kHz
2IC2 1
25 IC 40 cos sin 40 1
2 3 2 2 20 5
52. (c) V 2.5V
23 8 8 2
2
25 IC2 1
25 40cos sin
Therefore, 2.5
27 r3
25 IC2
25 16 cos sin r3
25 25 53. (b) Symmetric lattice network
IC 2 23.148 A V1 Z11I1 Z12I 2
27
47. (b) V2 Z21I1 Z 22 I2
Contents of accumulator
After first RRC = 0011 0010 = 32 H V1 V1 V1 V1 3
After second RRC = 1000 1100 = 8CH Z11 I1
I1 I 0 3 3 I1 2
48. 0.8 2
Step size = 0.5 ...(1)
3
RF Z11
But, step size = 5 ...(2) 2
8
On comparing eqn (1) and (2) V1 I2 I
Z12 V1 1 2 2
RF I2 I 0 2 2
2
0.5 5
8
1 I2
RF 0.8k = I2 1
2 2
49. 1
V1 1
K Z12
G j H j I2 2
1 j 1 2j 1 3j
V2 I1 I I1
G j H j tan 1 tan 1 2 tan 1 3 180 Z 21 V2 1 1 2
I1 I 0 2 2 2
2
180 tan 1 3 c tan 1 c tan 1 2 c
V2 1
Z 21
2 c I1 2
180 tan 1 3 c tan 1 c
1 2 c2
V2 V2 V2 2V2
Z22 I2
3 c I2 I 0 3 3 3
tan 180 tan 1 3 c 1
1 2 c2
V2 3
Z22
I2 2
 24
Here, i1 = – i2
3 1
Z11 Z12 V1 3 1
2 2 1
Z21 Z 22 1 3 I1 2 6
2 2 V1 9 6 1
54. 4 I2 6
At t = O–
R I2 6 I2 6
...(2)
– V1 16 V1 16
A iL(0 ) For eqn (1) & (2)
6 mA 2R K 6
7R K 3
8 16
4V
– +
VA VA 56. (b)
6 +
2R R
VA 5
iL 0 0.1 V1 V1
R

iL 0 –
6 i 0
2 By KCL
3 V1 4 5 0.1V1 0
6 iL 0
2
V1 0.5V1 4 0
iL 0 4A 0.5V1 = 4
40
At t= 0+ R V1 8V
0.5
+
iL(0 ) V1 VOC VTH 8V
6 mA 2R For iSC, Vi = 0
4A 7R 4V
– +

0.1 V1 iSC
i 0 i 0 4A 5
=0
55. – 3
Put s = 0
K I2 4V
Y12 0 ...(1)
8 V1 – +
1 1
XC i.e., capacitor is open
SC 0 5 iSC
3
2
i1 1 i2
4
+ iSC A
5
1 VOC 8
V1 6 R th
iSC 4

– 8 5
R th 10
4
 25

Ie 2 2 VDD V0 5 2
57. (b) gm 0.08 mho ID max 0.6mA
VT KT / q 25 RD 5k
61. 0.625
100 Data stored as charge in capacitor can retained only for a limited
and rs 1250 ohm
gm 0.08 time due to leakage current, which eventualy removes or
58. 15 modifies the charge DRAM.
Voltage across 30 k resistance (V30K) = VZ + VBE Hence, the require periodic refreshing of the stored data
V30k 8.3 0.7 9V CdVc
I
Vout 30 dt
V30k Time to discharge half of the initial voltage general at this point
20 30
DRAM should be refreshed
50V30k
Vout dVc CVc
30 I C
dt 2t
5
Vout 9 15V CVc 20 10 15 2.5 5 10 14
3 t 0.625ms
59. 8.70 – 8.75 2I 2 40 10 12 8 10 11
Here, Zener diode is reverse biased with 16 V. 62. (c)
For breakdown region, condition is V0 = Vz = 10V For 4 × 1 M U X :
Assume that there is no zener diode in the circuit. A B F
Vin 16 0 0 C
Then, V0 RL 1.2 8.73V
R total 1 1.2 0 1 0
As breakdown voltage required for Zener diode is 10V. 1 0 C'
Hence, V0 = 8.73 V
1 1 1
60. (a)
F = A B C + AB C + AB
V1 VP VGS1 VP V1 VGS1 F = A B C + A(B C + B)
VP = 3 – 2 = 1 VDD F = A B C + A(B + B )(C + B)
Now, For M2 F = A B C + AB + AC
ID Now, For 2 × 1 MUX
A F
RD 0 I0
1 I1
V0
F A I0 AI1
F ABC A B C
V1 M1
63. (a)
07H = (07)16 = 00000111 2 07 10
P
In this program, process of multiply of BYTE 1 by 10 is
carryout,
V2 M2 Hence, 7 × 10 = (70)10 = (46)16 = 46H
Content of A is 46H
64. 3.00 – 3.05
Nyquist diagram cut the Real axis at 0.33
VDS2 VP 1V 1
So, Gain Margin (G.M.) = 3.03
0.33
VGS2 Vth 2 2 1.5 0.5V 65. 0.93 – 0.94
VDS2 VGS2 Vth 2 sR s
ess t lim
M2 saturation s 01 G s H s

For M1 in saturation; VDS1 VGS1 Vth1

V0 Vp VGS2 Vth1 V0 1 2 1 V0 2V
 26

60 V2
s. = 1.96 × 10–6
E s lim s3 Hz
68. (a)
s 0 20 s 3 s 4 s 8
1
s2 s 2 s 15 69. (b)
For Point C
2
Z0 = 75 , ZL = 60 – j35 , l , l
60 2 2
s 2 s 15 s 2
2
E s lim s ZL jZ0 tan l ZL j75 tan
s 0 s 2 s 2 s 15 20 s 3 s 4 s 8 ZinC = Z0 75
Z0 jZL tan l 75 jZL tan
60 2 15 1800 ZinC = ZL
E s 0.9375 For point B
0 20 3 4 8 1920 Zo = 100
66. (b) (s + 5) (s + 6) + K (s + 1) (s + 2) = 0
s2 + 11s + 30 + K (s2 + 3s + 2) = 0 2 3 3 3
Z LB ZinC ZL , l , tan
4 2 2
s 2 11s 30
K jZ0 Z02 100
2
s2 3s 2 ZinB Z0
jZL ZL ZL

dK s 2 3s 2 (2s 11) s2 11s 30 2s 3 For point A

2 2 5 5 5
ds Z0 = 50 , ZLA = ZinB, l = , tan 1
s2 3s 2 8 4 4

ZLA jZ0 tan l

2s3 6s 2 4s 11s 2 33s 22 (2s3 22s 2 60s ZinA Z0
Z0 jZL tan l
A
3s 2 33s 90)
= 2 ZinB jZ0
s2 3s 2 ZinA Z0
Z0 jZinB

dK 100
2
On putting, 0
ds j50
ZL
8s2 + 56s + 68 = 0 = 50 2
s = – 1.563, – 5.437 j 100
67. (c) 50
ZL
As, we know
2
Energy per non-zero symbol = Vrms 2
T 100 j50ZL
2 = 50 2
A A2 100 10 3 10 2
50ZL j 100
2
Vrms Vrms
2 2 2 2 10000 j50 60 j35
ZinA 50
2
Vrms 5 10 V 3 2 50 60 j35 j10000
Here, T = 10 × 10–3 10000 j3000 1750
Now, Energy per non-zero symbol =
2 ×T = 5 ×10–3 × 10–3 × 10
60 j35 j200
= Vrms
= 5 × 10–5 11750 j3000 2350 j600
=
Average energy per symbol is given by 60 j165 12 j33
E1 0 2350 j600 12 j33
= = 2.5 × 10–5 =
2 12 j33 12 j33

N n 2 rms 140 10 3 28200 j77550 j7200 19800

Noise PSD is calculated as =
BN BN 10 10 3 1233
0.0196 48000 j70350
= 0.0196 10 4 ZinA
1233
104
 27
= 38.93 – j57.055 +
ZinA = 39 – j57 V
70. 6.5 – 7.0
I0 = IC2
51 – 6.53
Iref R1
Rth = 7||5 + 6||9
Q3
IC1
IE3
Q1 Q2
IB1 IB 2

–
V
I E3 1 IB3

7 5 6 9
I E3
Rth = Iref IC1
7 5 6 9 1

35 54 2I B2
Rth = 6.52
12 15 = IC1
1
For maximum power transfer
RL = Rth = 6.52 IC1 IC2 I B2
71. –100
At V = 0, ISC = 30 mA 2 I C2
Iref I C2
At i = 0, VOC = –3V 1
Voc 3
Rth 100 2
i sc 30 10 3
= IC 2 1 1
72. (a) x(t) = sin 2 t
2 Iref
IC 2 Io
e jt e jt 1 2 jt 2 jt 2
= e e 2 1
2j 4 1

1 1 1
X[k] = k 1 k k 1 IC IE
4 2 4 75. (d) 1
T 50 50
Ic 1 mA 0.98A
2 2 50 1 51
0 2
T T VC = IC RC – 9 = 0.98 × 4.7 – 9 = – 4.394 V
73. 4 IE
ID = k(VGS – VT)2 IB
1
2
ID1 k 2 1
1
= 19.6 A
2 51
ID2 k 3 1
VE = IB RB + VEB = 50 × 19.6 × 10–3 + 0.7
2 VE = 1.68V
I D2 2
4 VEC =VE – VC = 1.68 –(–4.394)= 6.074 V
ID1 12 76. (b)
77. (c)
I D2 4ID1 4 1 4mA

74. (c) Iref IC1 I B3

IB3 I B 2 , I E3 2 I B2
 28

+ 1
R(s) + C(s) Gain margin (G.M.) = G jw H jw
G1 G2
pc
+ +

1 1
2
= 1
1 2
80. (b) fi(t) = fc + Kf m(t)
R(s) + max[fi(t)] = max [fc + Kf m(t)]
G1+ 1 G2 C(s)
+ = 106 + 5 × 105
= 1.5 × 106 = 1.5 MHz

1
1 81. = 108 rad/sec,
3
+
R(s) C(s) c
G2 (1+ G1) =
+ Er

3 108 108
1 1
r
3
R(s) 1 + G2 (1+ G1) C(s)
r 3 = r =3
R(s) 1 + G2 + G1 G2 C(s) 82. 0.6
For position at A
5
78. 144690 iA(t) = = 1 mA
5
Characteristics equation
For position at B
1 + G(s) H(s) = 0
Here H(s) = 1 5
iB(t) = = 0.5 mA
10
k i(mA)
1 0
s 15 s 27 s 38
1
(s + 15) (s2 + 38s + 27s + 1026) + k = 0
(s + 15) (s2 + 65s + 1026) + k = 0 0.5
s3 + 65s2 + 1026s + 15s2 + 975 s + 15390 + k = 0
s3 + 80s2 + 2001s + 15390 + k = 0 t(ms)
1 5
Average value of i(t) is
s3 1 2001 5
1
i av i t dt
s2 80 k 15390 5
0
1 160080 k 15390
s 0 1 5
80 1
= 5 1 dt 0.5 dt
s0 k 15390 0 1

For oscillation 1 1 5
iav t 0
0.5 t 1
5
160080 k 15390
0 1 1 3
80 iav 1 0.5 5 1 = 1 2 0.6 mA
5 5 5
k = 144690
83. 15
79. 2
20 i1 – 40 i2 – 5 i3 = V1 ---- (1)
–15 i1 + 65 i2 – 25 i3 = –V2 ---- (2)
 29
–5 i1 – 25 i2 – 35 i3 = 0 ---- (3)
20
V1 = R2 (i1 – i3) + R4 (i1 – i2) – 25 i2 Vth 10 5 1.67 V
10 20
V1 = R2 i1 – R2 i3 + R4 i1 – R4 i2 – 25 i2
V1 = (R2 + R4) i1 – (R4 + 25) i2 – R2 i3 10 = (1 + ) IBQ × 2 + VEB + IBQ(6.67) + 1.67
R4 + 25 = 40 +10V
R4 = 15 .
84. 1.5 – 1.7
Eg 2k
ni2 Nc N v e KT
6.67 k

1.1
= (2 × 1019) (1019) e 0.0259
1.67 V
= 7.18 × 10–19
× 1019
× 1019 = 7.18 × 1019
2.2 k
9
ni = 8.47 × 10 cm .–3

Nd >> ni Nd = n0
J = E = en0 n E –10V
J = (1.6 × 10–19) (1014) (103) (100)
10 – 1.67 – 0.7 = IBQ(122 + 6.67)
J = 1.6 A/cm2
7.63 = IBQ (128.67)
85. 0.05 – 0.07 IBQ = 0.059 mA = 59 A
For Nd = 1016 cm–3. ICQ = IBQ = 60 × 59 = 3.54 mA
Nd IEQ = ( + 1) IBQ = 61 × 59 = 3.6 mA
EF – EFi = Vt ln n VE = 10 – IEQ RE = 10 – 3.6 × 2 = 2.8 V
i
VC = ICQ RC – 10 = 3.54 × 2.2 – 10 = –2.2 V
VEC = 2.8 – (–2.2) = 5V
1016
= 0.0259 ln 0.347 eV 88. (d) (VGS)1 = (VGS)2 = –V3
1.5 1010 Assume transistor are in saturation
For Nd = 1015 cm–3 200
ID1 = ID2 = = 100 A
2
Nd 1015
EF – EFi = Vt l n = 0.0259 ln = 0.287 eV
ni 1.5 1010 (K n are
W
are same for M1 and M2)
L
Vbi = 0.347 – 0.287 = 0.06 eV
For saturation region
86. (b) Current through 12 is
K 'n W 2
6.3 4.8 ID VGS VTH
i= 125 mA 2 L
12
iL = i – iz = 125 – iz 6100 10 6 20 2
100 10 VGS 1
For iz = 5, iL = 120 2
For iz = 100; iL = 25 0.1 = (VGS – 1)2
25 iL 120 mA ± 0.316 = VGS – 1
VGS = 1.32 V
4.8
25 120
RL ID1 = 5 – ID1 (40 × 103) = 5 – 100 × 10–6 × 4 × 104 =
1V
1 RL 1 (VDS)sat = VGS – VTH = 1.32 – 1 = 0.32 V
120 4.8 25 VGS = VG – VS
40 RL 192 0 – VS = 1.32
87. 4.90 – 5.10 VS = –1.32 V
So, VDS = VD – VS = 1 – (–1.32) = 2.32 V
20 10
R th 6.67 k (VDS) > (VDS) sat,
20 10 So, true
 30
V3 = – VGS = 1.32 V
C B A
V1 = VD1 =1V Y
S2 S1 S0
V2 = VD2 =1V 0 0 0 1
0 0 1 0
A
89. (c) Af 0 1 0 0
1 A
0 1 1 1
Af 1 1 0 0 0
2 1 0 1 1
A 1 A
1 1 0 1
Af A/A 1 1 1 0
Af 1 A
Y C B A C BA CBA CBA
Af 20
100
Af 1 100 Y C B A BA C BA BA

20 Y=C A B C A B
= 0.198 0.2%
101
90. 0.25 93. 89
At resonance; MVI B, 89 H
XL = XC MOV A, B
L1 + L2 + 2K L1L 2 = |– j 18| MOV C, A
MOV D, 37H
j12 + j3 + 2 K j12 j3 = j18 OUT PORT 1
2K × j 6 = j3 The content of A is 89 which is displayed at port P1.
3 94. 0.2
K= 0.25
12 Ka 5
G(s) =
91. 1000 s 0.5s 1 s 0.5s 1

A B C D H(s) = 1
0 0 0 0 Reset state R s 1
E(s) = lim s. R s
0 0 0 1 s 0 1 G s H s s2
0 0 1 0
0 0 1 1 1
s.
0 1 0 0 s2
MOD 10 counter = lim 5
s 0
0 1 0 1 1
s 0.5s 1
0 1 1 0
0 1 1 1
0.5s 1
1 0 0 0 = lim
s 0 0.5s 2 s 5
1 0 0 0
0 0 0 1 1
= 0.2
5
f 10 103 95. (b)
Frequency at output F = 1000Hz
10 10 X(s) = (sI – A)–1 (X(0) + B. u)
92. (d)
1 s 1 0 1 1 1
=
s 1 s 2 1 s 2 0 1 s
 31

s 1 300 73 227
= 0.6
s s 1 300 73 373
= PTransmitted = PTransmission line [1 – 2]
1
= 100 [1 – (0.6)2]
s s 1 s 2 PTransmitted = 64 W
Y (s) = [0 1] × (s)
s 1 r 1 0
100. (a) 1 = 0, n2 n0 0
s s 1 1 r 4 2
= [0 1]
1 s s 1 s 2 0
0 1
s s 1 s 2 2 1 2
1 A B C 2 1 0 3
0
2
s s 1 s 2 s s 1 s 2
1 = A(s + 1) (s + 2) + Bs (s + 2) + Cs(s + 1) 1
Eor = Eoi = × 42 = – 14
Put s 0 Put s 1 put s 2 3
1 2A 1 B 1 1 1 C 2 1
y
1 1
A B 1 C
2 2
11 1 1 1
Y s A(–2, 0)
2s s 1 2s 2
101. (d) x
1 1 2t O(0, 0)
y t e t e B
2 2
96. 50
Deviation ratio at Narrowband output = 0.1
Deviation ratio at wideband output = 5 c(0, –2)
B
(–2, 2)
5
n 50
0.1
97. (d) Channel bandwidth , B = 3.4 × 103 Hz dz
SNR = 30 dB Let I = 2 where c is square OABC
cz 2z 2
30 = 10 log SNR
SNR = 1000 z2 + 2z + 2 = 0
C = B log2 (1 + SNR) = 3.4 × 103 log2 (1 + 1000) (z + 1)2 + 1 = 0
= 33.9 ×103 bits/second
98. (b) (z + 1)2 = –1
Am = 125, fs = 32 k sample/sec (z + 1) = ± j
1 1 z = –1 ± j
fm z = –1 –j, –1 + j
T 2
Pole –1 –j lies inside the square
A m Fm
Ts dz
I
A m fm 125 0.5 z 1 j z 1 j
c
fs 32 1000
Let, f(z) = z + 1 – j
1000 1024
125 0.5 2 f z dz
I
32 1024 10 z 1 j
2 c
2–9
99. 63 – 65 2 j
n1 = 300 =
2j
The dipole antenna is ,
2

Rrad of = 73 = n 1.
2

n2 n1
n2 n1