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Data Transistor 2241

This document summarizes the key specifications and characteristics of the isc Silicon NPN Darlington Power Transistor model 2SD2241. The transistor has a collector-emitter breakdown voltage of 100V minimum and saturation voltage of 1.5V maximum at 3A collector current. It provides high DC current gain of 2000 minimum at 1.5A collector current and 3V collector-emitter voltage. The device is designed for switching applications and has maximum ratings of 100V collector-emitter voltage, 4A continuous collector current, and 150°C junction temperature.

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156 views

Data Transistor 2241

This document summarizes the key specifications and characteristics of the isc Silicon NPN Darlington Power Transistor model 2SD2241. The transistor has a collector-emitter breakdown voltage of 100V minimum and saturation voltage of 1.5V maximum at 3A collector current. It provides high DC current gain of 2000 minimum at 1.5A collector current and 3V collector-emitter voltage. The device is designed for switching applications and has maximum ratings of 100V collector-emitter voltage, 4A continuous collector current, and 150°C junction temperature.

Uploaded by

heru
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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isc Silicon NPN Darlington Power Transistor 2SD2241

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
·High DC Current Gain
: hFE= 2000(Min) @ IC= 1.5A, VCE= 3V
·Complement to Type 2SB1481
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 100 V

VCEO Collector-Emitter Voltage 100 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 4 A

ICM Collector Current-Peak 6 A

IB Base Current-Continuous 0.3 A

Collector Power Dissipation


25
@ TC=25℃
PC W
Collector Power Dissipation
2.0
@ Ta=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Darlington Power Transistor 2SD2241

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 100 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V

VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA 2.0 V

ICBO Collector Cutoff Current VCB= 100V; IE= 0 20 μA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.5 mA

hFE -1 DC Current Gain IC= 1.5A; VCE= 2V 2000

hFE -2 DC Current Gain IC= 3A; VCE= 2V 1000

VECF C-E Diode Forward Voltage IE= 1A; IB= 0 2.0 V

Switching times

ton Turn-on Time 0.2 μs

IB1= IB2= 6mA;


tstg Storage Time RL= 10Ω; VCC≈ 30V 1.5 μs
PW=20μs; Duty Cycle≤1%

tf Fall Time 0.6 μs

Notice：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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