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2 SD 1522

This document provides information about the INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1522. It details the transistor's electrical characteristics such as collector-emitter breakdown voltage, current gain, and switching times as well as absolute maximum ratings.
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0% found this document useful (0 votes)
30 views

2 SD 1522

This document provides information about the INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1522. It details the transistor's electrical characteristics such as collector-emitter breakdown voltage, current gain, and switching times as well as absolute maximum ratings.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor 2SD1522

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 450V(Min)
·High DC Current Gain
: hFE= 500(Min) @ IC= 5A, VCE= 3V
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 500 V

VCEO Collector-Emitter Voltage 450 V

VEBO Emitter-Base Voltage 7 V

IC Collector Current-Continuous 10 A

ICM Collector Current-Peak 20 A

Collector Power Dissipation


3
@Ta=25℃
W
PC Collector Power Dissipation
100
@TC=25℃

Tj Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor 2SD1522

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 450 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 20mA ,IC= 0 7 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A, IB= 8mA 1.5 V

VBE(sat) Base-Emitter Saturation Voltage IC= 5A, IB= 8mA 2.0 V

ICBO Collector Cutoff current VCB= 500V, IE= 0 0.1 mA

IEBO Emitter Cutoff Current VEB= 7V; IC= 0 20 mA

hFE DC Current Gain IC= 5A; VCE= 3V 500

Switching Times

ton Turn-On Time 1.5 μs

tstg Storage Time IC = 5A,IB1 = IB2= 8mA 7.0 μs

tf Fall Time 4.0 μs

NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any
particular purpose, nor does ISC assume any liability arising from the application or use of
any products, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.

isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark

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