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    Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

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    This document provides product specifications for the SavantIC Semiconductor 2SB1016 silicon PNP power transistor. It is a TO-220Fa packaged transistor with a high breakdown voltage and low collector saturation voltage, intended for power amplifier applications. Key specifications include an absolute maximum collector-emitter voltage of -100V, collector current of -5A, and DC current gain ranges from 20 to 240 depending on test conditions. Outline dimensions and electrical characteristic ratings are provided.

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    Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

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    75 views5 pages
    This document provides product specifications for the SavantIC Semiconductor 2SB1016 silicon PNP power transistor. It is a TO-220Fa packaged transistor with a high breakdown voltage and low collector saturation voltage, intended for power amplifier applications. Key specifications include an absolute maximum collector-emitter voltage of -100V, collector current of -5A, and DC current gain ranges from 20 to 240 depending on test conditions. Outline dimensions and electrical characteristic ratings are provided.

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    B1016

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    This document provides product specifications for the SavantIC Semiconductor 2SB1016 silicon PNP power transistor. It is a TO-220Fa packaged transistor with a high breakdown voltage and low collector saturation voltage, intended for power amplifier applications. Key specifications include an absolute maximum collector-emitter voltage of -100V, collector current of -5A, and DC current gain ranges from 20 to 240 depending on test conditions. Outline dimensions and electrical characteristic ratings are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    75 views5 pages

    Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    zero cloud
    This document provides product specifications for the SavantIC Semiconductor 2SB1016 silicon PNP power transistor. It is a TO-220Fa packaged transistor with a high breakdown voltage and low collector saturation voltage, intended for power amplifier applications. Key specifications include an absolute maximum collector-emitter voltage of -100V, collector current of -5A, and DC current gain ranges from 20 to 240 depending on test conditions. Outline dimensions and electrical characteristic ratings are provided.

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    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB1016

    DESCRIPTION
    ·With TO-220Fa package
    ·High breakdown voltage
    ·Low collector saturation voltage
    ·Complement to type 2SD1407

    APPLICATIONS
    ·Power amplifier applications

    PINNING

    PIN DESCRIPTION

    1 Emitter

    2 Collector

    3 Base

    Absolute maximum ratings(Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter -100 V

    VCEO Collector -emitter voltage Open base -100 V

    VEBO Emitter-base voltage Open collector -5 V

    IC Collector current -5 A

    IB Base current -0.5 A

    PC Collector power dissipation TC=25 30 W

    Tj Junction temperature 150

    Tstg Storage temperature -55~150

    Downloaded from: http://www.datasheetcatalog.com/


    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB1016

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -100 V

    VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -2.0 V

    VBE Base-emitter voltage IC=-4A; VCE=-5V -1.5 V

    ICBO Collector cut-off current VCB=-100V; IE=0 -100 µA

    IEBO Emitter cut-off current VEB=-5V; IC=0 -1 mA

    hFE-1 DC current gain IC=-1A ; VCE=-5V 40 240

    hFE-2 DC current gain IC=-4A ; VCE=-5V 20

    fT Transition frequency IC=-1A; VCE=-5V 5 MHz

    COB Collector output capacitance f=1MHz ; VCB=-10V;IE=0 270 pF

    hFE-1 Classifications

    R O Y

    40-80 70-140 120-240

    Downloaded from: http://www.datasheetcatalog.com/


    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB1016

    PACKAGE OUTLINE

    Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

    Downloaded from: http://www.datasheetcatalog.com/


    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB1016

    Downloaded from: http://www.datasheetcatalog.com/


    This datasheet has been downloaded from:

    www.DatasheetCatalog.com

    Datasheets for electronic components.

    Downloaded from: http://www.datasheetcatalog.com/

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