Scribd Logo
Upload

Welcome to Scribd!

  • 15 views

    Description Mechanical Dimensions: NPN General Purpose Transistor

    Uploaded by

    Cristian Achiña Landeta
    This document provides specifications for an NPN general purpose transistor. It includes maximum ratings for voltage and current limits, as well as electrical characteristics like breakdown voltages, current gain, and saturation voltages. The transistor is packaged in a TO-92 case and is rated to operate from -55 to 150 degrees Celsius. Key parameters include a current gain of 35-300 and frequency bandwidth of 300 MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Description Mechanical Dimensions: NPN General Purpose Transistor

    Uploaded by

    Cristian Achiña Landeta
    15 views2 pages
    This document provides specifications for an NPN general purpose transistor. It includes maximum ratings for voltage and current limits, as well as electrical characteristics like breakdown voltages, current gain, and saturation voltages. The transistor is packaged in a TO-92 case and is rated to operate from -55 to 150 degrees Celsius. Key parameters include a current gain of 35-300 and frequency bandwidth of 300 MHz.

    Original Description:

    data

    Original Title

    datasheet

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for an NPN general purpose transistor. It includes maximum ratings for voltage and current limits, as well as electrical characteristics like breakdown voltages, current gain, and saturation voltages. The transistor is packaged in a TO-92 case and is rated to operate from -55 to 150 degrees Celsius. Key parameters include a current gain of 35-300 and frequency bandwidth of 300 MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    15 views2 pages

    Description Mechanical Dimensions: NPN General Purpose Transistor

    Uploaded by

    Cristian Achiña Landeta
    This document provides specifications for an NPN general purpose transistor. It includes maximum ratings for voltage and current limits, as well as electrical characteristics like breakdown voltages, current gain, and saturation voltages. The transistor is packaged in a TO-92 case and is rated to operate from -55 to 150 degrees Celsius. Key parameters include a current gain of 35-300 and frequency bandwidth of 300 MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 2

    Data Sheet NPN General Purpose

    Transistor
    Description Mechanical Dimensions
    TO-92
    2N2222A

    2
    1 1
    2
    3
    Maximum Ratings
    Ratings Symbol Value Units
    Collector - Emitter Voltage VCEO 40 V
    Collector - Base Voltage VCBO 75 V
    Emitter - Base Voltage VEBO 6.0 V
    Collector Current (Continuous) IC 600 mA
    Total Device Dissipation PD 625 mW
    TA = 25oC
    Junction and Storage Temperature TJ, TSTG -55 to 150 C
    o

    Electrical Characteristics
    Characteristic Symbol Min Max Unit
    Collector - Emitter Breakdown Voltage (Note 3) VBR(CEO) 40 --- V
    (IC = 10mA)
    Collector - Base Breakdown Voltage VBR(CBO) 75 --- V
    (IC = 10µA)
    Emitter - Base Breakdown Voltage VBR(EBO) 6.0 --- V
    (IE = 10µA)
    Base Cutoff Current ICBO --- 10 nA
    (VCB = 60V)
    Collector Cutoff Current ICEX --- 10 nA
    (VCE = 60V, VEB(OFF) = 3.0V)
    Emitter Cutoff Current IEBO --- 10 nA
    (VEB = 3.0V)
    DC Current Gain HFE ---
    (IC = 0.1 mA, VCE = 10 V) 35 ---
    (IC = 1.0 mA, VCE = 10 V) 50 ---
    (IC = 10 mA, VCE = 10 V) 75 ---
    (IC = 150 mA, VCE = 10 V) 100 300
    (IC = 500 mA, VCE = 10 V) 40 ---
    Collector - Emitter Saturation Voltage VCE(sat) V
    (IC = 150 mA, IB = 15 mA) --- 0.3
    (IC = 500 mA, IB = 50 mA) --- 1.0
    Base - Emitter Saturation Voltage VBE(sat) V
    (IC = 150 mA, IB = 15 mA) --- 1.2
    (IC = 500 mA, IB = 50 mA) --- 2.0
    Current - Gain - Bandwidth Product (Note 4) fT 300 --- MHz
    (IC = 20 mA, VCB = 20 V, f = 100 MHz)
    Classification of hFE4
    Rank A B
    Range 100-210 190-300
    Data Sheet 2N2222A NPN General
    Purpose Transistor

    You might also like

    pFad - Phonifier reborn

    Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

    Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


    Alternative Proxies:

    Alternative Proxy

    pFad Proxy

    pFad v3 Proxy

    pFad v4 Proxy