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    2SK2188

    Uploaded by

    Abigail Hoobs
    This document provides information on the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1619. It has a collector-emitter breakdown voltage of 25V minimum and is avalanche tested with minimum lot-to-lot variations for robust performance. It is designed for low frequency amplifier electronic governor applications. The document lists the transistor's maximum ratings and electrical characteristics including current gain, bandwidth, and capacitance.

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    2SK2188

    Uploaded by

    Abigail Hoobs
    40 views2 pages
    This document provides information on the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1619. It has a collector-emitter breakdown voltage of 25V minimum and is avalanche tested with minimum lot-to-lot variations for robust performance. It is designed for low frequency amplifier electronic governor applications. The document lists the transistor's maximum ratings and electrical characteristics including current gain, bandwidth, and capacitance.

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    This document provides information on the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1619. It has a collector-emitter breakdown voltage of 25V minimum and is avalanche tested with minimum lot-to-lot variations for robust performance. It is designed for low frequency amplifier electronic governor applications. The document lists the transistor's maximum ratings and electrical characteristics including current gain, bandwidth, and capacitance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    40 views2 pages

    2SK2188

    Uploaded by

    Abigail Hoobs
    This document provides information on the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1619. It has a collector-emitter breakdown voltage of 25V minimum and is avalanche tested with minimum lot-to-lot variations for robust performance. It is designed for low frequency amplifier electronic governor applications. The document lists the transistor's maximum ratings and electrical characteristics including current gain, bandwidth, and capacitance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    INCHANGE Semiconductor

    isc Silicon NPN Power Transistor 2SD1619

    DESCRIPTION
    ·Collector-Emitter Breakdown Voltage-
    : V(BR)CEO= 25V (Min)
    ·Complement to Type 2SB1119
    ·100% avalanche tested
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·Designed for LF Amp Electronic Governor applications.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 25 V

    VCEO Collector-Emitter Voltage 25 V

    VEBO Emitter-Base Voltage 5 V

    IC Collector Current-Continuous 1 A

    ICM Collector Current-Peak 2 A

    Collector Power Dissipation


    PC 0.5 W
    @ Tc=25℃

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor

    isc Silicon NPN Power Transistor 2SD1619

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 25 V

    V(BR)CBO Collector-Base Breakdown Voltage IC=-10uA ,IE=0 25 V

    V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 5 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 0.3 V

    VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.2 V

    ICBO Collector Cutoff Current VCB= 20V; IE= 0 0.1 μA

    IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 μA

    hFE-1 DC Current Gain IC= 50mA; VCE= 2V 100 560

    hFE-2 DC Current Gain IC= 1A; VCE= 2V 40

    fT Current-Gain—Bandwidth Product IC= 50mA; VCE= 10V 180 MHz

    COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 15 pF

     hFE -1Classifications

    R S T U

    100-200 140-280 200-400 280-560

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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