MMBFJ309L, MMBFJ310L,

SMMBFJ309L, SMMBFJ310L

JFET - VHF/UHF Amplifier

Transistor
N−Channel
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Features
2 SOURCE
• Drain and Source are Interchangeable
• S Prefix for Automotive and Other Applications Requiring Unique
3
Site and Control Change Requirements; AEC−Q101 Qualified and GATE
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant 1 DRAIN

MAXIMUM RATINGS
Rating Symbol Value Unit 3
SOT−23 (TO−236)
Drain−Source Voltage VDS 25 Vdc 1 CASE 318
STYLE 10
Gate−Source Voltage VGS 25 Vdc 2

Gate Current IG 10 mAdc

THERMAL CHARACTERISTICS MARKING DIAGRAM

Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board, PD
(Note 1) TA = 25°C 225 mW 6x M G
Derate above 25°C 1.8 mW/°C G
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W 1

Junction and Storage Temperature TJ, Tstg −55 to +150 °C 6x = Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the x = U for MMBFJ309L, SMMBFJ309L
device. If any of these limits are exceeded, device functionality should not be x = T for MMBFJ310L, SMMBFJ310L
assumed, damage may occur and reliability may be affected. M = Date Code*
1. FR−5 = 1.0 x 0.75 x 0.062 in. G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.

ORDERING INFORMATION
Device Package Shipping†
MMBFJ309LT1G, SOT−23 3,000 / Tape &
SMMBFJ309LT1G (Pb−Free) Reel
MMBFJ310LT1G, SOT−23 3,000 / Tape &
SMMBFJ310LT1G (Pb−Free) Reel

SMMBFJ310LT3G SOT−23 10,000 / Tape &

(Pb−Free) Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 1994 1 Publication Order Number:

October, 2016 − Rev. 8 MMBFJ309LT1/D
 MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage V(BR)GSS −25 − − Vdc
(IG = −1.0 mAdc, VDS = 0)
Gate Reverse Current (VGS = −15 Vdc) IGSS − − −1.0 nAdc
Gate Reverse Current (VGS = −15 Vdc, TA = 125°C) − − −1.0 mAdc
Gate Source Cutoff Voltage MMBFJ309 VGS(off) −1.0 − −4.0 Vdc
(VDS = 10 Vdc, ID = 1.0 nAdc) MMBFJ310, SMMBFJ310 −2.0 − −6.5
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current MMBFJ309 IDSS 12 − 30 mAdc
(VDS = 10 Vdc, VGS = 0) MMBFJ310, SMMBFJ310 24 − 60
Gate−Source Forward Voltage VGS(f) − − 1.0 Vdc
(IG = 1.0 mAdc, VDS = 0)
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance |Yfs| 8.0 − 18 mmhos
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Output Admittance |yos| − − 250 mmhos
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Input Capacitance Ciss − − 5.0 pF
(VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance Crss − − 2.5 pF
(VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Equivalent Short−Circuit Input Noise Voltage en − 10 − nVń ǸHz
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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2
 MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L

70 70

IDSS, SATURATION DRAIN CURRENT (mA)

60 60
VDS = 10 V TA = -55°C

I D , DRAIN CURRENT (mA)

50 50
IDSS +25°C
40 +25°C 40

30 30
+150°C
20 +25°C 20
-55°C
10 +150°C 10

0
-5.0 -4.0 -3.0 -2.0 -1.0 0
ID - VGS, GATE-SOURCE VOLTAGE (VOLTS)
IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)

Figure 1. Drain Current and Transfer

Characteristics versus Gate−Source Voltage
Yfs , FORWARD TRANSCONDUCTANCE (μmhos)

100 k 1.0 k 10 120

Yos, OUTPUT ADMITTANCE (μ mhos)

RDS
Yfs

R DS , ON RESISTANCE (OHMS)
Yfs 96
7.0
CAPACITANCE (pF)

10 k 100
72
Cgs
4.0 48
1.0 k VGS(off) = -2.3 V = 10
Yos VGS(off) = -5.7 V =
Cgd 24
1.0
100 1.0 0 0
0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0
ID, DRAIN CURRENT (mA) VGS, GATE SOURCE VOLTAGE (VOLTS)

Figure 2. Common−Source Output Figure 3. On Resistance and Junction

Admittance and Forward Transconductance Capacitance versus Gate−Source Voltage
versus Drain Current

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3
 MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L

|S21|, |S11| |S12|, |S22|

30 3.0 0.85 0.45 0.060 1.00

S22
VDS = 10 V
24 2.4 0.79 0.39 0.048 0.98
|Y11|, |Y21 |, |Y22 | (mmhos)

ID = 10 mA
S21
TA = 25°C
Y11

Y12 (mmhos)
18 1.8 0.73 0.33 VDS = 10 V 0.036 0.96
ID = 10 mA
TA = 25°C
Y21
12 1.2 0.67 0.27 0.024 0.94
S11
Y22
6.0 0.6 0.61 0.21 0.012 0.92

Y12 S12
0 0.55 0.15 0.90
100 200 300 500 700 1000 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 4. Common−Gate Y Parameter Figure 5. Common−Gate S Parameter

Magnitude versus Frequency Magnitude versus Frequency

q21, q11 q12, q22 q11, q12 q21, q22

180° 50° -20° 87° -20° 120° 0
q11
q22 -20°
q21
170° 40° -40° 86° -40° 100° q22 -20°
q21
-60°
160° 30° -80° 85° -60° 80° -40°
-100°
150° 20°
q12
-120° 84° -80° 60° q21 -60°

q11 -140° q12

140° 10° VDS = 10 V -160° 83° -100° 40° VDS = 10 V -80°
q11
ID = 10 mA ID = 10 mA
TA = 25°C -180°
TA = 25°C
130° 0° -200° 82° -120° 20° -100°
100 200 300 500 700 1000 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 6. Common−Gate Y Parameter Figure 7. S Parameter Phase−Angle

Phase−Angle versus Frequency versus Frequency

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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
3 THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
E HE T PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b A1 0.01 0.06 0.10 0.000 0.002 0.004
L1 b 0.37 0.44 0.50 0.015 0.017 0.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
L1 0.35 0.54 0.69 0.014 0.021 0.027
A HE 2.10 2.40 2.64 0.083 0.094 0.104
T 0° −−− 10 ° 0° −−− 10°
A1 SIDE VIEW SEE VIEW C c
GENERIC
END VIEW
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT XXXMG
G
1
3X
2.90 0.90 XXX = Specific Device Code
M = Date Code
G = Pb−Free Package

*This information is generic. Please refer to

3X 0.80 0.95 device data sheet for actual part marking.
PITCH Pb−Free indicator, “G” or microdot “ G”,
DIMENSIONS: MILLIMETERS may or may not be present.

STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:

CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION
3. COLLECTOR 3. COLLECTOR 3. CATHODE

STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE

STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION

STYLE 27: STYLE 28:

PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. CATHODE 3. ANODE

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1

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