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    IRF840 Datasheet

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    kurt.ccobainee
    These documents describe several n-channel power MOSFET transistors. Key specifications include maximum ratings like voltage and current, on-state characteristics like resistance, and switching characteristics like delay times. The devices are intended for applications like power supplies and motor controls.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    IRF840 Datasheet

    Uploaded by

    kurt.ccobainee
    15 views5 pages
    These documents describe several n-channel power MOSFET transistors. Key specifications include maximum ratings like voltage and current, on-state characteristics like resistance, and switching characteristics like delay times. The devices are intended for applications like power supplies and motor controls.

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    IRF840_datasheet

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    These documents describe several n-channel power MOSFET transistors. Key specifications include maximum ratings like voltage and current, on-state characteristics like resistance, and switching characteristics like delay times. The devices are intended for applications like power supplies and motor controls.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    15 views5 pages

    IRF840 Datasheet

    Uploaded by

    kurt.ccobainee
    These documents describe several n-channel power MOSFET transistors. Key specifications include maximum ratings like voltage and current, on-state characteristics like resistance, and switching characteristics like delay times. The devices are intended for applications like power supplies and motor controls.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    IRF440-443/IRF840-843

    MTM7N45/7N50
    N-Channel Power MOSFETs
    8A, 450V/500V

    Description
    These devices are n-channel, enhancement mode, power TO-204AA TO-220AB
    MOSFETs designed especially for high voltage, high speed
    applications, such as off-line switching power supplies, UPS,
    AC and DC motor controls, relay and solenoid drivers.
    z VGS Rated at ±20V
    z Silicon Gate for Fast Switching Speeds
    z IDSS, VDS(on), SOA and VGS(th) Specified at Elevated
    Temperature
    z Rugged

    IRF440 IRF840
    IRF441 IRF841
    IRF442 IRF842
    IRF443 IRF843
    MTM7N45
    MTTM7N50

    Maximum Ratings
    Symbol Characteristic Rating Rating
    IRF440/442 IRF441/443
    IRF840/842 IRF841/843
    MTM7N50 MTM7n45 Unit
    VDSS Drain to Source Voltage 500 450 V
    VDGR Drain to Gate Voltage 500 450 V
    RGS=20k Ω
    VGS Gate to Source Voltage ±20 ±20 V
    TJ,Tstg Operating Junction and -50 to +150 -50 to +150 ℃
    Storage Temperature
    TL Maximum Lead Temperature 275 275 ℃
    for Soldering Purposes,
    1/8” From Case for 5S
    Maximum On-State Characteristics
    IRF440/441 IRF442/443 MTM7N45
    IRF840/841 IRF842/843 MTM7N50
    RDS(on) Static Drain-to-Source 0.85 1.1 0.8 Ω
    On Resistance
    ID Drain Current A
    Continuous 8 7 7
    Pulsed 32 28 40
    Maximum Thermal Characteristics
    R ӨJC Thermal Resistance, 1.0 1.0 0.83 ℃/W
    Junction to Case
    R ӨJA Thermal Resistance, 60 60 60 ℃/W
    Junction to Ambient
    PD Total Power Dissipation 125 125 150 W
    at Tc=25℃
    Notes
    For Information concerning connection diagram and package outline, refer to
    Section 7.

    www.artschip.com 1
    IRF440-443/IRF840-843
    MTM7N45/7N50
    N-Channel Power MOSFETs
    8A, 450V/500V

    Electrical Characteristics (Tc=25℃ unless otherwise noted)


    Symbol Characteristic Min Max Unit Test Conditions
    Off Characteristics
    V(BR)DSS Drain Source Breakdown Voltage1 V VGS=0V, ID=250µA
    IRF440/442/840/842 500
    IRF441/443/842/843 450
    IDSS Zero Gate Voltage Drain Current 250 µA VDS=Rated VDSS, VGS=0V
    100 µA VDS=0.8 x Rated VDSS,
    VGS=0V, Tc=125℃
    IGSS Gate-Body Leakage Current nA VGS=±20V, VDS=0V
    IRF440-443 ±100
    IRF840-843 ±500
    On Characteristics
    VGS(th) Gate Threshold Voltage 2.0 4.0 V ID=250µA, VDS=VGS
    RDS(on) Static Drain-Source On-Resistance 2 Ω VGS=10V, ID=4.0A
    IRF440/441/840/841 0.85
    IRF442/443/842/843 1.10
    gfs Forward Transconductance 4.0 S( ) VDS=10V, ID=4.0A
    Dynamic Characteristics
    Ciss Input Capacitance 1600 pF VDS=25V, VGS=0V
    Coss Output Capacitance 350 pF f=1.0MHz
    Crss Reverse Transfer Capacitance 150 pF
    Switching Characteristics (Tc=25℃, Figure 9, 10)
    td(on) Turn-On Delay Time 35 ns VDD=220V, ID=4.0A
    tr Rise Time 15 ns VGS=10V, RGEN=4.7 Ω
    td(off) Turn-Off Delay Time 90 ns RGS=4.7 Ω
    tf Fall Time 30 ns
    Qg Total Gate Charge 60 nC VGS=10V, ID=12A
    VDD=400V

    Symbol Characteristic Typ Max Unit Test Conditions


    Source-Drain Diode Characteristics
    VSD Diode Forward Voltage 2.0 V IS=8.0A; VGS=0V
    IRF440/441/840/841 1.9 V IS=7.0A; VGSA=0V
    IRF442/443/842/843
    trr Reverse Recovery Time 700 ns Is=8.0A; dIS/dt=100A/µs
    Notes
    1. TJ=+25 ℃ to +150℃
    2. Pulse test: Pulse width ≤80µs, Duty cycle ≤ 1%

    www.artschip.com 2
    IRF440-443/IRF840-843
    MTM7N45/7N50
    N-Channel Power MOSFETs
    8A, 450V/500V

    Electrical Characteristics (Tc=25℃ unless otherwise noted)


    Symbol Characteristic Min Max Unit Test Conditions
    Off Characteristics
    V(BR)DSS Drain Source Breakdown Voltage1 V VGS=0V, ID=5.0mA
    MTM7N50 500
    MTM7N45 450
    IDSS Zero Gate Voltage Drain Current 0.25 mA VDS=0.85 x Rated VDSS,
    VGS=0V
    2.5 mA VDS=0.85 x Rated VDSS,
    VGS=0V, Tc=100℃
    IGSS Gate-Body Leakage Current ±500 nA VGS=±20V, VDS=0V
    On Characteristics
    VGS(th) Gate Threshold Voltage 2.0 4.5 V ID=1.0mA, VDS=VGS
    1.5 4.0 V ID=1.0mA, VDS=VGS
    TC=100℃
    RDS(on) Static Drain-Source On-Resistance2 0.8 Ω VGS=10V, ID=3.5A
    VDS(on) Drain-Source On-Voltage2 2.8 V VGS=10V, ID=3.5A
    7.0 V VGS=10V, ID=7.0A
    5.6 V VGS=10V, ID=3.5A
    Tc=100℃
    gfs Forward Transconductance 4.0 S( ) VDS=10V, ID≈4.0A
    Dynamic Characteristics
    Ciss Input Capacitance 1800 pF VDS=25V, VGS=0V
    Coss Output Capacitance 350 pF f=1.0MHz
    Crss Reverse Transfer Capacitance 150 pF
    3
    Switching Characteristics (Tc=25℃, Figure 9,10)
    td(on) Turn-On Delay Time 60 ns VDD=25V, ID=3.5A
    tr Rise Time 150 ns VGS=10V, RGEN=50 Ω
    td(off) Turn-On Delay Time 200 ns RGS=50 Ω
    tf Fall Time 120 ns
    Qg Total Gate Charge 60 nC VGS=10V, ID=12A
    VDD=400V
    Notes
    1. TJ=+25℃ to +150℃
    2. Pulse test: Pulse width ≤ 80µs, Duty cycle ≤ 1%
    3. Switching time measurements performed on LEM TR-58 test equipment

    www.artschip.com 3
    IRF440-443/IRF840-843
    MTM7N45/7N50
    N-Channel Power MOSFETs
    8A, 450V/500V

    Typical Performance Curves


    Figure 1 Output Characteristics Figure 2 Static Drain to Source Resistance vs Drain
    Current

    Figure 3 Transfer Characteristics Figure 4 Temperature Variation of Gate to


    Source Threshold Voltage

    Figure 6 Gate to Source Voltage vs Total Gate Charge


    Figure 5 Capacitance vs Drain to Source Voltage

    www.artschip.com 4
    IRF440-443/IRF840-843
    MTM7N45/7N50
    N-Channel Power MOSFETs
    8A, 450V/500V

    Typical Performance Curves (Cont.)


    Figure 7 Forward Biased Safe Operating Area Curves Figure 8 Transient Thermal Resistance vs Time

    Typical Electrical Characteristics


    Figure 9 Switching Test Circuit Figure 10 Switching Waveforms

    www.artschip.com 5

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