Compact models have a clear advantage over subcircuit models due to numerical simplicity, reduced number of parameters, and more physical tuning of parameters. The main difficulty in the modeling of LAMOS arises, as expressions become nonintegrable / nonexplicit due to the lateral asymmetry in the channel. At constant VG RD can increase by near two orders of magnitude with VD due to the depletion region that forms in the drift zone.
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Compact models have a clear advantage over subcircuit models due to numerical simplicity, reduced number of parameters, and more physical tuning of parameters. The main difficulty in the modeling of LAMOS arises, as expressions become nonintegrable / nonexplicit due to the lateral asymmetry in the channel. At constant VG RD can increase by near two orders of magnitude with VD due to the depletion region that forms in the drift zone.
Compact models have a clear advantage over subcircuit models due to numerical simplicity, reduced number of parameters, and more physical tuning of parameters. The main difficulty in the modeling of LAMOS arises, as expressions become nonintegrable / nonexplicit due to the lateral asymmetry in the channel. At constant VG RD can increase by near two orders of magnitude with VD due to the depletion region that forms in the drift zone.
Copyright:
Attribution Non-Commercial (BY-NC)
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Download as DOCX, PDF, TXT or read online from Scribd
Compact models have a clear advantage over subcircuit models due to numerical simplicity, reduced number of parameters, and more physical tuning of parameters. The main difficulty in the modeling of LAMOS arises, as expressions become nonintegrable / nonexplicit due to the lateral asymmetry in the channel. At constant VG RD can increase by near two orders of magnitude with VD due to the depletion region that forms in the drift zone.
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Compact models have a clear advantage over subcircuit models due to numerical simplicity (fast convergence), reduced number
of parameters, and more physical tuning of parameters. The main difficulty in the modeling of LAMOS arises, as expressions become nonintegrable/nonexplicit due to the lateral asymmetry in the channel. Source and body are tied to avoid parasitic BJT for all measurements. Cross section of substrate based N type LDMOS
Cross section of isolated N type LDMOS (substrate (collector), drain (base) and bulk (emitter))
CGD in LAMOS has a peak due to lateral non-uniform doping being always higher than (1/2)WLCox in strong inversion.
The peak in CGG occurs for small nonzero values of VDS, when VGS is around threshold voltage (source end entering into strong inversion from weak/moderate inversion).
The CGG behavior at a low gate bias is dominated by the lateral doping, whereas at a higher gate bias, the peaks are dictated by the drift region. The higher the drift resistance (large drift length or high value of drift resistivity), the higher the peak in CGG becomes, and vice versa.
The rising slope and value of the peak in CGD is given by the lateral asymmetry in the LAMOS channel. whereas the fall in CGD is heavily affected by the drift region
The drain current at a higher gate bias is heavily affected by the drift region. The prolonged linear region on output characteristics is affected by both the lateral nonuniform doping and the drift region.
The first dip in |gds| in Fig. 15(b) is given by the self-heating effect, whereas the second dip is given by the impact-ionization effect.
Drift region resistance
First remark is that at constant VG RD can increase by near two orders of magnitude with VD due to the depletion region that forms in the drift region. At low VG a depleted area always exists in the drift zone, below the gate oxide or the bird's beak, depending on the VD values, which results in an increased equivalent resistance. By increasing VG due to the combined effects of the accumulation and carrier injection phenomena, this depleted area could disappear and, consequently, the RD resistance decreases. A less usual behavior is observed from numerical simulated drift characteristics at low VD values (less than 1V): RD appears to decrease with VD at any VG(Fig._below). This can be explained by the change of the conduction from surface into volume, resulting in an equivalent mobility increase, when VD increases. When extracting RD from the MESDRIFT devices, this phenomenon is not visible due probably to the slightly shifted location of the n+ implant (Fig. 2). Except this particular small discrepancy, it is found that experitnental RD(VD,VG) correctly follow the predictions of numerical simulations in all significant operation regimes, which confirms the validity of the VK concept.
The main reason behind using EKV MOSFET model [4] for intrinsic channel is that EKV model has physical expression for current and charges which are continuous from weak to moderate to strong inversion. Another advantage of EKV model is that compared with existing MOS models, it uses reduced number of parameters which are all physical. Drain-to-source current in EKV model is given as ID = IS(if ir)
A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors
Full 2-D numerical MOSFET models do allow insight into the device physics, but their intensive computational requirements generally render them too cumbersome and slow for most circuit simulation applications. physical compact models achieve the speed and robustness required for circuit simulation by describing terminal attributes such as charges, currents, and capacitances by a simplified single set of consistent, continuous, and accurate physics-based equations. The general modeling strategy for the physically based compact models for LDMOS is to divide the device into two components: an intrinsic MOS channel and a drift region, where the former is modeled as a highvoltage MOS transistor and the latter as a nonlinear resistor and/or a junction FET. The drift region has often been subdivided into two or more regions: an accumulation region due to a gate overlap, a drift region with a cylindrical junction, an upper surface accumulation/depletion region under the field plate, and a drift region without a field plate The two main approaches to modeling the intrinsic transistor are based on the driftdiffusion approximation (i.e., neglecting hot carriers) and centered on either the inversion charge (IC) or surface potential (SP) of the MOSFET channel. The drain current and terminal charges are indirect functions of the terminal voltages through either the SP or IC density. Conventional SP models are based on the original charge-sheet approximation, and the IC models are based on charge density approximations obtained from the Unified Charge Control model. IC compact models are the advanced compact MOSFET, BSIM5, and EKV. PSP model, which is a combination of the MM11 and SP models. SP-based LDMOS models have been reported for dc operation only and for the dc and ac domains. The latter combines the low-voltage MOS region with the high-voltage drift region bu t does not demonstrate scalability. Although good accuracy for dc operation has been achieved by other models, these have lacked accuracy for the ac domain and scalability, particularly with NHV length, temperature, and device width. quasi nuetral region: Doped semiconductor region containing free carriers and being almost neutral.
Minority carriers in the quasi-neutral regions move only by diffusion. depletion approximation, this is the region of no electric field. Therefore, Poisson's equation equal to zero, and drift is zero.
