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    Improved Growth Method For III-V Nitride Devices

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    U.S. Naval Research Laboratory
    The Naval Research Laboratory (NRL) has developed a materials growth method that results in significantly improved crystalline quality of wide bandgap semiconducting nitrides precisely where it is needed most – in the active region of a vertical conduction device. The NRL technique, shown schematically above, is applicable to a wide range of substrates and uses a dielectric mask to confine epitaxial growth to a vertical column. This approach results in a reduction in the extended defect density in the column wherein the active region of the device (drift layer, junction, etc.) can be placed. This approach also avoids the need for plasma etch delineation of device regions and maintains a current conduction path that includes the substrate, enabling higher integration levels of devices such as power switches, detectors, and light emitters. The technique has been demonstrated to be effective in improving the performance of UV detectors and easing implementation of UV imaging arrays. NRL Technology Transfer Office http://www.nrl.navy.mil/techtransfer/fs.php?fs_id=ELE07 Naval Research Laboratory website http://www.nrl.navy.mil

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    Improved Growth Method For III-V Nitride Devices

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    U.S. Naval Research Laboratory
    34 views1 page
    The Naval Research Laboratory (NRL) has developed a materials growth method that results in significantly improved crystalline quality of wide bandgap semiconducting nitrides precisely where it is needed most – in the active region of a vertical conduction device. The NRL technique, shown schematically above, is applicable to a wide range of substrates and uses a dielectric mask to confine epitaxial growth to a vertical column. This approach results in a reduction in the extended defect density in the column wherein the active region of the device (drift layer, junction, etc.) can be placed. This approach also avoids the need for plasma etch delineation of device regions and maintains a current conduction path that includes the substrate, enabling higher integration levels of devices such as power switches, detectors, and light emitters. The technique has been demonstrated to be effective in improving the performance of UV detectors and easing implementation of UV imaging arrays. NRL Technology Transfer Office http://www.nrl.navy.mil/techtransfer/fs.php?fs_id=ELE07 Naval Research Laboratory website http://www.nrl.navy.mil

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    Improved Growth Method for III-V Nitride Devices

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    The Naval Research Laboratory (NRL) has developed a materials growth method that results in significantly improved crystalline quality of wide bandgap semiconducting nitrides precisely where it is needed most – in the active region of a vertical conduction device. The NRL technique, shown schematically above, is applicable to a wide range of substrates and uses a dielectric mask to confine epitaxial growth to a vertical column. This approach results in a reduction in the extended defect density in the column wherein the active region of the device (drift layer, junction, etc.) can be placed. This approach also avoids the need for plasma etch delineation of device regions and maintains a current conduction path that includes the substrate, enabling higher integration levels of devices such as power switches, detectors, and light emitters. The technique has been demonstrated to be effective in improving the performance of UV detectors and easing implementation of UV imaging arrays. NRL Technology Transfer Office http://www.nrl.navy.mil/techtransfer/fs.php?fs_id=ELE07 Naval Research Laboratory website http://www.nrl.navy.mil

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    34 views1 page

    Improved Growth Method For III-V Nitride Devices

    Uploaded by

    U.S. Naval Research Laboratory
    The Naval Research Laboratory (NRL) has developed a materials growth method that results in significantly improved crystalline quality of wide bandgap semiconducting nitrides precisely where it is needed most – in the active region of a vertical conduction device. The NRL technique, shown schematically above, is applicable to a wide range of substrates and uses a dielectric mask to confine epitaxial growth to a vertical column. This approach results in a reduction in the extended defect density in the column wherein the active region of the device (drift layer, junction, etc.) can be placed. This approach also avoids the need for plasma etch delineation of device regions and maintains a current conduction path that includes the substrate, enabling higher integration levels of devices such as power switches, detectors, and light emitters. The technique has been demonstrated to be effective in improving the performance of UV detectors and easing implementation of UV imaging arrays. NRL Technology Transfer Office http://www.nrl.navy.mil/techtransfer/fs.php?fs_id=ELE07 Naval Research Laboratory website http://www.nrl.navy.mil

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    NAVAL RESEARCH LABORATORY


    TECHNOLOGY LICENSING OPPORTUNITY

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    IMPROVED GROWTH METHOD FOR III-V NITRIDE DEVICES


    Advantages/Features Improved material quality in epi-defined device active region Eliminates need for plasma etch delineation of devices, which can lead to damage and surface leakage Applicable to a wide range of substrates and compatible with standard semiconductor processing Applications Vertical conduction devices: power switches, lasers, LEDs, detectors Distributed devices: large area power switches, imaging arrays For more information contact: Rita Manak, Ph.D. Head, Technology Transfer Office 202 767-3083 rita.manak@nrl.navy.mil Identification Number: ELE07

    The Naval Research Laboratory (NRL) has developed a materials growth method that results in significantly improved crystalline quality of wide bandgap semiconducting nitrides precisely where it is needed most in the active region of a vertical conduction device. The NRL technique, shown schematically above, is applicable to a wide range of substrates and uses a dielectric mask to confine epitaxial growth to a vertical column. This approach results in a reduction in the extended defect density in the column wherein the active region of the device (drift layer, junction, etc.) can be placed. This approach also avoids the need for plasma etch delineation of device regions and maintains a current conduction path that includes the substrate, enabling higher integration levels of devices such as power switches, detectors, and light emitters. The technique has been demonstrated to be effective in improving the performance of UV detectors and easing implementation of UV imaging arrays.
    References "Improved GaN Materials and Devices Through Confined Epitaxy," Applied Physics Letters 90 (2007) 162101 (1-3). "Approaches to Reduced-Defect Active Regions for III-N Devices," ECS Transactions 3 (2006) 117-123. Available for License: US Patent Nos. 7,198,970 and 7,470,989.

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