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Isc Silicon PNP Power Transistors: INCHANGE Semiconductor

This document provides product specifications for the isc 2N6379 silicon PNP power transistor. Key specifications include: - Low collector saturation voltage, high DC current gain, and high power dissipation up to 250W. - Designed for use in industrial-military power amplifier and switching circuit applications. - Absolute maximum ratings including collector-base voltage of -140V, collector-emitter voltage of -120V, and continuous collector current of -50A. - Electrical characteristics at different operating conditions including collector-emitter saturation voltage below -3V and DC current gain ranging from 10 to 120 depending on current levels.

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10 views

Isc Silicon PNP Power Transistors: INCHANGE Semiconductor

This document provides product specifications for the isc 2N6379 silicon PNP power transistor. Key specifications include: - Low collector saturation voltage, high DC current gain, and high power dissipation up to 250W. - Designed for use in industrial-military power amplifier and switching circuit applications. - Absolute maximum ratings including collector-base voltage of -140V, collector-emitter voltage of -120V, and continuous collector current of -50A. - Electrical characteristics at different operating conditions including collector-emitter saturation voltage below -3V and DC current gain ranging from 10 to 120 depending on current levels.

Uploaded by

Testronicparts
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

2N6379

DESCRIPTION
Low Collector Saturation Voltage
High DC Current Gain
High Power Dissipation

APPLICATIONS
Designed for use in industrial-military power amplifier
and switching circuit application.

ABSOLUTE MAXIMUM RATINGS(Ta=25)


SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-140

VCE0

Collector-Emitter Voltage

-120

VEBO

Emitter-Base Voltage

-6

IC

Collector Current-Continuous

-50

IB

Base Current-Continuous

-20

PC

Collector Power Dissipation

250

TJ

Junction Temperature

-65~200

Tstg

Storage Temperature

-65~200

isc websitewww.iscsemi.cn

isc & iscsemi is registered trademark

isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

2N6379

ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCE(sat)1

Collector-Emitter Saturation Voltage

IC= -20A; IB= -2A

-1.2

VCE(sat)2

Collector-Emitter Saturation Voltage

IC= -50A; IB= -10A

-3.0

VBE(sat)1

Base-Emitter Saturation Voltage

IC= -20A; IB= -2A

-1.8

VBE(sat)1

Base-Emitter Saturation Voltage

IC= -50A; IB= -10A

-3.5

Collector Cutoff Current

VEB= -6V; IE= 0

-0.1

mA

hFE1

DC Current Gain

IC= -1A; VCE= -4V

50

hFE2

DC Current Gain

IC= -20A; VCE= -4V

30

hFE3

DC Current Gain

IC= -50A; VCE= -4V

10

IEBO

120

:Pulse Test:Pulse Width=300us,Duty Cycle=2.0%

isc websitewww.iscsemi.cn

isc & iscsemi is registered trademark

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