Centre for Advanced Studies in Engineering, Islamabad

EE231L Electronic Devices and Circuits (4Th Semester)

Center for Advanced Studies in Engineering, Islamabad

Electronics Lab

Electronic Devices & Circuit Lab

Experiment No.09: Common Emitter Configurations

Name of Student: ……………………………………………………..

Roll No.: ……………………………………………………………….

Class Section: …………………………………………………………

Date of Experiment: ………………………………………………….

Report submitted on: …………………………………………………

Marks obtained: …………………………………

Instructor’s Signature: …………………………..

Experiment No.09: Common Emitter Configurations Page|1

 Centre for Advanced Studies in Engineering, Islamabad
EE231L Electronic Devices and Circuits (4Th Semester)
Objectives
1. To explore various biasing techniques of BJTs.
2. To select appropriate resistor values in order to achieve a specific bias point for a given
biasing configuration.
3. To investigate the relative merit/demerits of different biasing circuits.

Background Information
For a transistor to amplify signals, it is necessary to bias it in its active region, i.e. forward bias
its base-emitter junction and reverse bias the base-collector junction. The purpose of bias is to
provide DC voltages to set up the proper quiescent conditions for desired circuit operation.

There are many different ways to establish these quiescent operating conditions. The most
commonly used ones are those, which use only a single voltage source; these include Base-
Bias, Voltage-Divider Bias and Collector-Feedback Bias circuits. One should be familiar with
the advantages and disadvantages of each of these biasing configurations. These bias methods
are also applicable to both NPN and PNP transistors by using the appropriate voltage polarities.
The key for either type of transistor is that the base-emitter junction should be forward biased
and the base-collector junction reverse biased.

Base Bias (Fixed-Bias) Circuit

VCC
Base-bias circuit shown in Fig. 2.1 is the
simplest of all because it uses a single power
supply and a resistor. It is satisfactory for
switching applications but is generally RB RC
unsatisfactory for linear circuits (i.e. where
the transistor is used as an amplifier) due to
the dependency of the quiescent point on the
value of 𝛽 . Normal variations in the values
of 𝛽 of the same type of transistors greatly
affect the operating point of the base-bias
circuits.
Fig 2.1:_________________________

Experiment No.09: Common Emitter Configurations Page|2

 Centre for Advanced Studies in Engineering, Islamabad
EE231L Electronic Devices and Circuits (4Th Semester)

2.2 Voltage Divider Bias

Voltage Divider Bias circuit shown in Fig. 2.2 VCC

is the most commonly used type of BJT biasing
for two primary reasons; it provides excellent
operating point stability against variations in 𝛽
and temperature, and it requires only one power R1 RC
supply.

An emitter resistor is added to help improve the

Q-point stability. If 𝐼𝐸 starts to increase as a
result of the change in 𝛽 or temperature, 𝑉𝐸 also
increases, which causes a decrease in 𝑉𝐵𝐸 , R2 RE
which intern causes a decrease in 𝐼𝐵 and 𝐼𝐸 ,
compensating for the initial increase.
Fig 2.2:______________________

2.3 Collector Feedback Bias

VCC
The term feedback is used to describe a connection that
feeds a portion of an output voltage or current back to the
input of a circuit. The feedback signal can be a DC level,
or it can be a portion of an AC output signal. In the RC
collector feedback bias circuit, the base resistor is RB
connected directly to the collector of the transistor,
instead of directly to supply as is the case with base-bias
configuration. Thus any change in collector voltage or
current has a direct effect on the base circuit. Due to this
feedback, collector feedback bias circuit exhibits better
quiescent point stability, as compared to base-bias
circuit, against variations in temperature or 𝛽 values. Fig 2.3:______________________

Experimental Work
3.1 Equipment and Components Required

1. DC Power Supply
2. DMM
3. Breadboard
4. Transistor: 2𝑁3904
5. Resistors: [1k, 560k, 2.2k]
6. Potentiometers:
i. 10 𝑘Ω
ii. 1𝑀Ω
7. Connecting wires, etc.

Experiment No.09: Common Emitter Configurations Page|3

 Centre for Advanced Studies in Engineering, Islamabad
EE231L Electronic Devices and Circuits (4Th Semester)
Procedure
Part-I: Study of Base Bias (Fixed-Bias) Circuit

1. Using the pin configuration of Fig 3.1 connect the circuit as shown in Fig 3.2. Initially,
set 𝑅𝐵1 at its maximum value of 1𝑀Ω.
2. Apply power and adjust 𝑅𝐵1 so that the circuit is midpoint biased (i.e.𝑉𝐶𝐸 ≅ 0.5𝑉𝐶𝐶 ). In
the present case 𝑉𝐶𝐸 = 6 𝑉 as given in Table 3.1. Now measure the values of current
and voltage as required in Table 3.1.
3. Without disturbing the setting of 𝑹𝑩𝟏 , change the resistor 𝑅𝐶 to 2.2𝑘Ω and record the
corresponding values of voltages and currents in Table 3.1.
4. Remove the potentiometer 𝑅𝐵1 without disturbing its setting. Measure the
potentiometer resistance using DMM and note the value in Table 3.1.
5. Reconnect the potentiometer and repeat steps 2-4 for first obtaining a midpoint biasing
using 𝑅𝐶 = 2.2 𝑘Ω , and later replacing 𝑅𝐶 with 1𝑘Ω resistor and noting the
corresponding readings in Table 3.2.
6. Using the measured values of 𝑅𝐶 and 𝑉𝐶𝐶 of 12V, calculate 𝐼𝐶(𝑠𝑎𝑡) as indicated in Table
3.3. Plot the DC load lines for each case (using the same axes) in Fig.3.5.
7. Plot all the four operating points, i.e. (𝑉𝐶𝐸 , 𝐼𝐶 ) on the load lines of Fig 3.5.

VCC  12V

2 N 3904
NPN RB1 1 M
RC 1 k

RB2 560 k

2N 3904
E B C
Fig 3.1 (Pin diagram)
Fig 3.2:______________________
Fixed Bias: Part I

Midpoint biasing
𝑅𝐵1 𝑉𝐶𝐸 ≅ 0.5𝑉𝐶𝐶 𝑅𝐶 = 2.2 𝑘Ω (coded value)
𝑅𝐵2
(𝑘Ω) (𝑘Ω) 𝑅𝐶 = 1.0 𝑘Ω (coded value)
𝑅𝐶 = ⋯ ⋯ (measured value) 𝑅𝐶 = ⋯ ⋯ (measured value)

Measured Coded Measured 𝑉𝐶𝐸 𝐼𝐶 𝐼𝐵 𝑉𝐶𝐸 𝐼𝐶 𝐼𝐵

value Value Value (𝑉) (𝑚𝐴) (𝜇𝐴) (𝑉) (𝑚𝐴) (𝜇𝐴)

560 6

Table 3.1:_____________________

Experiment No.09: Common Emitter Configurations Page|4

 Centre for Advanced Studies in Engineering, Islamabad
EE231L Electronic Devices and Circuits (4Th Semester)
Fixed Bias: Part II
Midpoint biasing
𝑅𝐵1 𝑉𝐶𝐸 ≅ 0.5𝑉𝐶𝐶 𝑅𝐶 = 1.0 𝑘Ω (coded value)
𝑅𝐵2
(𝑘Ω) (𝑘Ω) 𝑅𝐶 = 2.2 𝑘Ω (coded value)
𝑅𝐶 = ⋯ ⋯ (measured value) 𝑅𝐶 = ⋯ ⋯ (measured value)

Measured Coded Measured 𝑉𝐶𝐸 𝐼𝐶 𝐼𝐵 𝑉𝐶𝐸 𝐼𝐶 𝐼𝐵

value Value Value (𝑉) (𝑚𝐴) (𝜇𝐴) (𝑉) (𝑚𝐴) (𝜇𝐴)

560 6

Table 3.2:____________________________

Load Line: Fixed Bias

𝑅𝐶 𝑉𝐶𝐶 𝑉𝐶𝐸(𝑜𝑓𝑓) = 𝑉𝐶𝐶

(𝑘Ω) 𝑉𝐶𝐶 𝐼𝐶(𝑠𝑎𝑡) =
𝑅𝐶
(𝑉) (𝑚𝐴)
Coded Value Measured Value (𝑉)

1 12 12
2.2 12 12

Table 3.3:____________________

Part-II: Study of Voltage Divider Bias Circuit

8. Now connect the circuit as shown in Fig 3.4.

9. Apply power and adjust 𝑅2 so that the circuit is midpoint biased (i.e.𝑉𝐶𝐸 ≅ 0.5𝑉𝐶𝐶 ). In
the present case 𝑉𝐶𝐸 = 6 𝑉 as given in Table 3.4. Now measure the values of current
and voltage as required in Table 3.4.
10. Without disturbing the setting of𝑅2 , change the resistor 𝑅𝐶 to 2.2𝑘Ω and record the
corresponding values of voltages and currents in Table 3.4.
11. Remove the potentiometer 𝑅2 without disturbing its setting. Measure the potentiometer
resistance using DMM and note the value in Table 3.4.
12. Reconnect the potentiometer and repeat steps 9-11 for first obtaining a midpoint biasing
using 𝑅𝐶 = 2.2 𝑘Ω , and later replacing 𝑅𝐶 with 1𝑘Ω resistor and noting the
corresponding readings in Table 3.5.
13. Using the measured values of 𝑅𝐶 and 𝑉𝐶𝐶 of 12V, calculate 𝐼𝐶(𝑠𝑎𝑡) as indicated in Table
3.6. Plot the DC load lines for each case (using the same axes) in Fig.3.6.
14. Plot all the four operating points, i.e. (𝑉𝐶𝐸 , 𝐼𝐶 ) on the load lines of Fig 3.6.

Experiment No.09: Common Emitter Configurations Page|5

 Centre for Advanced Studies in Engineering, Islamabad
EE231L Electronic Devices and Circuits (4Th Semester)
VCC  12V

2 N 3904
NPN R1 10 k RC 1 k

2N 3904

R2 5 k RE 330 
E B C
Fig 3.3 (Pin diagram)
Fig 3.4:______________________

Voltage Divider Bias: Part I

𝑅2 Midpoint biasing
𝑅1 𝑅𝐶 = 2.2 𝑘Ω (coded value)
(𝑘Ω) 𝑅𝐸 𝑉𝐶𝐸 ≅ 0.5𝑉𝐶𝐶
Measured (Ω) 𝑅𝐶 = 1.0 𝑘Ω (coded value)
(𝑘Ω) 𝑅𝐶 = ⋯ ⋯ (measured value)
Value 𝑅𝐶 = ⋯ ⋯ (measured value)
Measur
Coded Measured Coded 𝑉𝐶𝐸 𝐼𝐶 𝐼𝐵 𝑉𝐶𝐸 𝐼𝐶 𝐼𝐵
ed
Value Value Value (𝑉) (𝑚𝐴) (𝜇𝐴) (𝑉) (𝑚𝐴) (𝜇𝐴)
Value

10 330 6

Table 3.4:____________________________

Voltage Divider Bias: Part II

𝑅2 Midpoint biasing
𝑅1 𝑅𝐶 = 1.0 𝑘Ω (coded value)
(𝑘Ω) 𝑅𝐸 𝑉𝐶𝐸 ≅ 0.5𝑉𝐶𝐶
Measured (Ω) 𝑅𝐶 = 2.2 𝑘Ω (coded value)
(𝑘Ω) 𝑅𝐶 = ⋯ ⋯ (measured value)
Value 𝑅𝐶 = ⋯ ⋯ (measured value)
Measur
Coded Measured Coded 𝑉𝐶𝐸 𝐼𝐶 𝐼𝐵 𝑉𝐶𝐸 𝐼𝐶 𝐼𝐵
ed
Value Value Value (𝑉) (𝑚𝐴) (𝜇𝐴) (𝑉) (𝑚𝐴) (𝜇𝐴)
Value

10 330 6

Table 3.5:________________________

Load Line: Voltage Divider Bias

𝑅𝐶 𝑉𝐶𝐶 𝑉𝐶𝐸(𝑜𝑓𝑓) = 𝑉𝐶𝐶

(𝑘Ω) 𝑉𝐶𝐶 𝐼𝐶(𝑠𝑎𝑡) =
𝑅𝐶 + 𝑅𝐸
(𝑉) (𝑚𝐴)
Coded Value Measured Value (𝑉)

1 12 12
2.2 12 12

Table 3.6:_______________________

Experiment No.09: Common Emitter Configurations Page|6

 Centre for Advanced Studies in Engineering, Islamabad
EE231L Electronic Devices and Circuits (4Th Semester)

Fig 3.7:___________________________________________

Experiment No.09: Common Emitter Configurations Page|7

 Centre for Advanced Studies in Engineering, Islamabad
EE231L Electronic Devices and Circuits (4Th Semester)

Fig 3.8:___________________________________________

Home Task: (Simulation)

Verify the above tables on any Software (Proteus/Multism) and attached the designed circuit
with proper labelling (Name/Roll Number) with this report and also email your simulation
report before next lab.

Experiment No.09: Common Emitter Configurations Page|8

 Centre for Advanced Studies in Engineering, Islamabad
EE231L Electronic Devices and Circuits (4Th Semester)
Lab #08 Marks distribution

ER1 ER9 RR2

Task 50 points 30 points 20 points

Lab #08 Marks obtained

ER1 ER9 RR2 Total

Task

Marks Details:

Marks obtained: …………………………………

Instructor’s Signature: …………………………..

Experiment No.09: Common Emitter Configurations Page|9