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Isc 2SB553: Silicon PNP Power Transistor

This document provides product specifications for the INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB553. It has a low collector saturation voltage of -0.4V max at 4A collector current. It is intended for high current switching and power amplifier applications. The document lists maximum ratings, electrical characteristics, and switching times parameters.

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35 views

Isc 2SB553: Silicon PNP Power Transistor

This document provides product specifications for the INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB553. It has a low collector saturation voltage of -0.4V max at 4A collector current. It is intended for high current switching and power amplifier applications. The document lists maximum ratings, electrical characteristics, and switching times parameters.

Uploaded by

Newsr Print
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor Product Specification

isc Silicon PNP Power Transistor 2SB553

DESCRIPTION
·Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -4A
·Complement to Type 2SD553

APPLICATIONS
·High current switching applications.
·Power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage -70 V

VCEO Collector-Emitter Voltage -50 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current-Continuous -7 A

Total Power Dissipation


1.5
@ Ta=25℃
PC W
Total Power Dissipation
40
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.cn 1
INCHANGE Semiconductor Product Specification

isc Silicon PNP Power Transistor 2SB553

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -50 V

VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -0.4 V

VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.2 V

ICBO Collector Cutoff Current VCB= -70V ; IE= 0 -30 μA

IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA

hFE-1 DC Current Gain IC= -1A ; VCE= -1V 70 240

hFE-2 DC Current Gain IC= -4A ; VCE= -1V 30

fT Current-Gain—Bandwidth Product IC= -1A ; VCE= -4V 10 MHz

COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 250 pF

Switching Times

ton Turn-on Time 0.2 μs

RL= 10Ω, IB1= -IB2= -0.15A,


tstg Storage Time 2.5 μs
VCC≈ -30V

tf Fall Time 0.5 μs

 hFE-1 Classifications

O Y

70-140 120-240

isc website：www.iscsemi.cn 2

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