19-0202; Rev 2; 11/96

L
MANUA
L U A T ION KIT HEET
EVA TA S
WS DA
FOLLO
5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
_______________General Description ____________________________Features

MAX770–MAX773
The MAX770–MAX773 step-up switching controllers pro- ♦ 90% Efficiency for 10mA to 1A Load Currents
vide 90% efficiency over a 10mA to 1A load. A
unique current-limited pulse-frequency-modulation (PFM) ♦ Up to 15W Output Power
control scheme gives these devices the benefits of ♦ 110µA Max Supply Current
pulse-width-modulation (PWM) converters (high efficiency
at heavy loads), while using less than 110µA of supply ♦ 5µA Max Shutdown Current
current (vs. 2mA to 10mA for PWM converters).
♦ 2V to 16.5V Input Range
These ICs use tiny external components. Their high (MAX770/MAX771/MAX772)
switching frequencies (up to 300kHz) allow surface-
mount magnetics of 5mm height and 9mm diameter. ♦ Internal Shunt Regulator for High Input Voltages
The MAX770/MAX771/MAX772 accept input voltages (MAX773)
from 2V to 16.5V. Output voltages are preset at 5V, ♦ Preset or Adjustable Output Voltages
(MAX770), 12V (MAX771), and 15V (MAX772); they can MAX770: 5V or Adjustable
also be adjusted using two resistors. MAX771: 12V or Adjustable
The MAX773 accepts inputs from 3V to 16.5V. For a wider MAX772: 15V or Adjustable
input range, it features an internal shunt regulator that MAX773: 5V, 12V, 15V, or Adjustable
allows unlimited higher input voltages. The MAX773’s out-
put can be set to 5V, 12V, or 15V, or it can be adjusted ♦ Current-Limited PFM Control Scheme
with two resistors. ♦ 300kHz Switching Frequency
The MAX770–MAX773 drive external N-channel MOSFET
switches, allowing them to power loads up to 15W. If less ______________Ordering Information
power is required, use the MAX756/MAX757 or
MAX761/MAX762 step-up switching regulators with on- PART TEMP. RANGE PIN-PACKAGE
board MOSFETs. MAX770CPA 0°C to +70°C Plastic DIP
MAX770CSA 0°C to +70°C 8 SO
________________________Applications
MAX770C/D 0°C to +70°C Dice*
Palmtops/Handy-Terminals MAX770EPA -40°C to +85°C 8 Plastic DIP
High-Efficiency DC-DC Converters MAX770ESA -40°C to +85°C 8 SO
Battery-Powered Applications MAX770MJA -55°C to +125°C 8 CERDIP**

Positive LCD-Bias Generators Ordering Information continued at end of data sheet.

*Contact factory for dice specifications.
Portable Communicators **Contact factory for availability and processing to MIL-STD-883B.
Flash Memory Programmers
_________________Pin Configurations

__________Typical Operating Circuit TOP VIEW

INPUT
2V TO VOUT
EXT 1 8 CS
OUTPUT
12V V+ 2 7 GND
MAX770
EXT N MAX771
MAX771 FB 3 6 AGND
ON/OFF SHDN MAX772
CS
SHDN 4 5 REF

REF DIP/SO
V+
FB AGND GND

Pin Configurations continued at end of data sheet.

________________________________________________________________ Maxim Integrated Products 1

For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800.
For small orders, phone 408-737-7600 ext. 3468.
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
ABSOLUTE MAXIMUM RATINGS
MAX770–MAX773

Supply Voltages 14-Pin Plastic DIP

V+ to GND.............................................................-0.3V to 17V (derate 10.00mW/°C above +70°C) .............................800mW
V+ to SGND.............................................................-0.3V to 7V 14-Pin SO (derate 8.33mW/°C above +70°C) ..............667mW
SGND........................................................-0.3V to (V+ + 0.3V) 14-Pin CERDIP (derate 9.09mW/°C above +70°C) ......727mW
EXT, CS, REF, LBO, LBI, SHDN, FB.............-0.3V to (V+ + 0.3V) Operating Temperature Ranges
EXTH, EXTL ..................................................-0.3V to (V+ + 0.3V) MAX77_C_ _ ........................................................0°C to +70°C
V5, V12, V15 .............................................................-0.3V to 17V MAX77_E_ _......................................................-40°C to +85°C
GND to AGND .........................................................0.1V to -0.1V MAX77_MJ_ ...................................................-55°C to +125°C
ISGND ..................................................................................50mA Junction Temperatures
Continuous Power Dissipation (TA = +70°C) MAX77_C_ _/E_ _ ..........................................................+150°C
8-Pin Plastic DIP (derate 9.09mW/°C above +70°C)....727mW MAX77_MJ_..................................................................+175°C
8-Pin SO (derate 5.88mW/°C above +70°C) ................471mW Storage Temperature Range .............................-65°C to +160°C
8-Pin CERDIP (derate 8.00mW/°C above +70°C) ........640mW Lead Temperature (soldering, 10sec) .............................+300°C

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS
(V+ = 5V, ILOAD = 0mA, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
MAX770–772 (internal feedback resistors) 2.0 16.5
MAX770–772C/E (external resistors) 3.0 16.5
Input Voltage Range MAX770–772MJA (external resistors) 3.1 16.5 V
MAX773C/E 3.0 16.5
MAX773MJD 3.1 16.5
Minimum Start-Up Voltage MAX770/MAX771/MAX772 1.8 2.0 V
Supply Current V+ = 16.5V, SHDN = 0V (normal operation) 85 110 µA
V+ = 10.0V, SHDN ≥ 1.6V (shutdown) 2 5
Standby Current µA
V+ = 16.5V, SHDN ≥ 1.6V (shutdown) 4
V+ = 2.0V to 5.0V, over full load range 4.80 5.0 5.20
Output Voltage (Note 1) V+ = 2.0V to 12.0V, over full load range 11.52 12.0 12.48 V
V+ = 2.0V to 15.0V, over full load range 14.40 15.0 15.60
Output Voltage Line Regulation Figure 2a, V+ = 2.7V to 4.5V,
5 mV/V
(Note 2) ILOAD = 700mA, VOUT = 5V

Output Voltage Load Regulation Figure 2a, V+ = 3V, ILOAD = 30mA to 1A,
20 mV/A
(Note 2) VOUT = 5V

Maximum Switch On-Time tON(max) 12 16 20 µs

Minimum Switch Off-Time tOFF(min) 1.8 2.3 2.8 µs
Efficiency V+ = 4V, ILOAD = 500mA, VOUT = 5V 87 %
MAX77_C 1.4700 1.5 1.5300
Reference Voltage VREF IREF = 0µA MAX77_E 1.4625 1.5 1.5375 V
MAX77_M 1.4550 1.5 1.5450

2 _______________________________________________________________________________________
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
ELECTRICAL CHARACTERISTICS (continued)

MAX770–MAX773
(V+ = 5V, ILOAD = 0mA, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.)

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

MAX77_C/E 4 10
REF Load Regulation 0µA ≤ IREF ≤ 100µA mV
MAX77_M 4 15
REF Line Regulation 3V ≤ V+ ≤ 16.5V 40 100 µV/V
MAX77_C 1.4700 1.50 1.5300
FB Trip-Point Voltage VFB MAX77_E 1.4625 1.50 1.5375 V
MAX77_M 1.4550 1.50 1.5450
MAX77_C ±20
FB Input Current IFB MAX77_E ±40 nA
MAX77_M ±60
SHDN Input High Voltage VIH V+ = 2.0V to 16.5V 1.6 V
MAX77_C/E, V+ = 2.0V to 16.5V 0.4
SHDN Input Low Voltage VIL V
MAX77_M, V+ = 2.0V to 16.5V 0.2
SHDN Input Current V+ = 16.5V, SHDN = 0V or V+ ±1 µA
LBI Input Current MAX773, V+ = 16.5V, LBI = 1.5V ±20 nA
LBI Hysteresis MAX773 20 mV
LBI Delay 5mV overdrive 2.5 µs
MAX77_C 1.4700 1.50 1.5300
LBI Threshold Voltage MAX773, LBI falling MAX77_E 1.4625 1.50 1.5375 V
MAX77_M 1.4550 1.50 1.5450
LBO Leakage Current MAX773, V+ = 16.5V, VLBO = 16.5V 0.01 1.00 µA
LBO Output Voltage Low VOL MAX773, V+ = 5V, LBO sinking 1mA 0.1 0.4 V
Current-Limit Trip Level VCS V+ = 5V to 16.5V 170 200 230 mV
CS Input Current 0.01 ±1 µA
EXT Rise Time V+ = 5V, 1nF from EXT to ground (Note 3) 55 ns
EXT Fall Time V+ = 5V, 1nF from EXT to ground (Note 3) 55 ns
Supply Voltage in MAX773, ISHUNT = 1mA to 20mA,
VSHUNT 5.5 6.3 V
Shunt Mode SGND = 0V, CSHUNT = 0.1µF

Note 1: Output voltage guaranteed using preset voltages. See Figures 7a–7d for output current capability versus input voltage.
Note 2: Output voltage line and load regulation depend on external circuit components.
Note 3: For the MAX773, EXT is EXTH and EXTL shorted together.

_______________________________________________________________________________________ 3
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
__________________________________________Typical Operating Characteristics
MAX770–MAX773

(TA = +25°C, unless otherwise noted.)

MAX770 MAX771 MAX772
EFFICIENCY vs. OUTPUT CURRENT EFFICIENCY vs. OUTPUT CURRENT EFFICIENCY vs. OUTPUT CURRENT
(BOOTSTRAPPED) (BOOTSTRAPPED) (BOOTSTRAPPED)
100 100 100

MAX770–3-01

MAX770–3-02

MAX770–3-03
VOUT = 15V, CIRCUIT OF FIGURE 2b
VIN = 9V VIN = 6V MAX772 SUBSTITUTED FOR MAX771
90 VIN = 4V 90 90
EFFICIENCY (%)

EFFICIENCY (%)
EFFICIENCY (%)
80 80 80

70 VIN = 3.5V 70 70 VIN = 12V

VIN = 3V VIN = 5V VIN = 9V
60 VOUT = 5V VOUT = 12V VIN = 6V
60 VIN = 3V 60
CIRCUIT OF CIRCUIT OF VIN = 5V
FIGURE 2a FIGURE 2b VIN = 3V
50 50 50
0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1
OUTPUT CURRENT (A) OUTPUT CURRENT (A) OUTPUT CURRENT (A)

MAX771 MAX770 MAX771

EFFICIENCY vs. OUTPUT CURRENT LOAD CURRENT vs. LOAD CURRENT vs.
(NON-BOOTSTRAPPED) MINIMUM START-UP INPUT VOLTAGE MINIMUM START-UP INPUT VOLTAGE
100 700 500
MAX770–3-04

MAX770–3-05

MAX770–3-06
VOUT = 12V VOUT = 5V VOUT = 12V
CIRCUIT OF 600 CIRCUIT OF
VIN = 9V CIRCUIT OF
FIGURE 2c FIGURE 2a 400 FIGURE 2b
500
LOAD CURRENT (mA)

LOAD CURRENT (mA)

90
EFFICIENCY (%)

VIN = 6V 400 300

VIN = 5V 300
ABOVE 3.4V, 200 ABOVE 3.5V
80 THE CIRCUIT THE CIRCUIT
200
STARTS UP STARTS UP
UNDER UNDER
100 MAXIMUM
100 MAXIMUM
LOAD LOAD
CONDITIONS CONDITIONS
70 0 0
0.001 0.01 0.1 1 10 1.0 1.5 2.0 2.5 3.0 3.5 2.0 2.5 3.0 3.5 4.0
OUTPUT CURRENT (A) MINIMUM START-UP INPUT VOLTAGE (V) MINIMUM START-UP INPUT VOLTAGE (V)

SUPPLY CURRENT vs. TEMPERATURE SUPPLY CURRENT vs. SUPPLY VOLTAGE EXT RISE/FALL TIME vs. SUPPLY VOLTAGE
4 0.8 250
MAX770–3-09
MAX770–3-08
MAX770–3-07

VOUT = 12V, VIN = 5V

VOUT = 12V
CIRCUIT OF FIGURE 2b
BOOTSTRAPPED MODE 200
EXT RISE/FALL TIME (ns)
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)

3 0.6 BOOTSTRAPPED CEXT = 2200pF

CIRCUIT OF
ENTIRE FIGURE 2b CEXT = 1000pF
CIRCUIT 150 CEXT = 446pF
2 0.4 CEXT = 100pF
100
SCHOTTKY DIODE
1 LEAKAGE EXCLUDED 0.2
50
NON-BOOTSTRAPPED
CIRCUIT OF FIGURE 2c
0 0 0
-75 -50 -25 0 25 50 75 100 125 2 4 6 8 10 12 2 4 6 8 10 12
TEMPERATURE (°C) SUPPLY VOLTAGE (V) V+ (V)

4 _______________________________________________________________________________________
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
____________________________Typical Operating Characteristics (continued)

MAX770–MAX773
(TA = +25°C, unless otherwise noted.)

REFERENCE OUTPUT RESISTANCE vs.

TEMPERATURE REFERENCE vs. TEMPERATURE
250 1.506

MAX770–3-11
MAX770–3-10
REFERENCE OUTPUT RESISTANCE (Ω)

1.504
200
10µA 1.502

REFERENCE (V)
150 1.500

1.498
100
50µA
1.496
100µA
50
1.494

0 1.492
-60 -40 -20 0 20 40 60 80 100 120 140 -60 -40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (°C) TEMPERATURE (°C)

MAXIMUM SWITCH ON-TIME vs.

TEMPERATURE SHUTDOWN CURRENT vs. TEMPERATURE
16.5 4.0
MAX770–3-13

MAX770–3-12
3.5

3.0
tON(MAX) (µs)

2.5
ICC (µA)

16.0 2.0
V+ = 15V
1.5
V+ = 8V
1.0

0.5
V+ = 4V
15.5 0
-60 -30 0 30 60 90 120 150 -60 -40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (°C) TEMPERATURE (°C)

MAXIMUM SWITCH ON-TIME/

MINIMUM SWITCH OFF-TIME vs. MINIMUM SWITCH OFF-TIME RATIO
TEMPERATURE vs. TEMPERATURE
2.30 8.0
MAX770–3-14

MAX770–3-15
tON(MAX)/tOFF(MIN) RATIO

7.5
tOFF(MIN) (µs)

2.25 7.0

6.5

2.20 6.0
-60 -30 0 30 60 90 120 150 -60 -30 0 30 60 90 120 150
TEMPERATURE (°C) TEMPERATURE (°C)

_______________________________________________________________________________________ 5
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
____________________________Typical Operating Characteristics (continued)
MAX770–MAX773

(Circuit of Figure 2a, TA = +25°C, unless otherwise noted.)

MAX770 MAX770
HEAVY-LOAD SWITCHNG WAVEFORMS LIGHT-LOAD SWITCHING WAVEFORMS

VOUT

0 A A
ILIM
ILIM
ILIM
2 B 2
0 B
0
C
C

20µs/div 20µs/div
VIN = 2.9V, IOUT = 0.9A V+ = 3V, IOUT = 165mA
A: EXT VOLTAGE, 5V/div A: EXT VOLTAGE, 5V/div
B: INDUCTOR CURRENT 1A/div B: INDUCTOR CURRENT, 1A/div
C: VOUT RIPPLE 100mV/div, AC-COUPLED C: VOUT RIPPLE 100mV/div, AC-COUPLED

MAX770 MAX770
LINE-TRANSIENT RESPONSE LOAD-TRANSIENT RESPONSE

4.5V A
A
2.7V
0

B
B

2ms/div 2ms/div
IOUT = 0.7A VIN = 3V
A: VIN, 2.7V TO 4.5V, 2V/div A: LOAD CURRENT 0.5A/div (0A to 1A)
B: VOUT RIPPLE, 100mV/div, AC-COUPLED B: VOUT RIPPLE, 100mV/div, AC-COUPLED

6 _______________________________________________________________________________________
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers

MAX770–MAX773
____________________________Typical Operating Characteristics (continued)
(Circuit of Figure 2a, TA = +25°C, unless otherwise noted.)

MAX770
EXITING SHUTDOWN

200µs/div
VIN = 3V, IOUT = 0.5A
A: SHDN, 2V/div
B: VOUT, 2V/div

______________________________________________________________Pin Description
PIN
MAX770 NAME FUNCTION
MAX771 MAX773
MAX772
1 — EXT Gate drive for external N-channel power transistor
Power-supply input. Also acts as a voltage-sense point when in bootstrapped mode for the
2 3 V+ MAX770/MAX771/MAX772, or as a shunt regulator when SGND is connected to ground for the
MAX773. Bypass to SGND with 0.1µF when using the shunt regulator.
Feedback input for adjustable-output operation. Connect to ground for fixed-output operation. Use
3 6 FB
a resistor divider network to adjust the output voltage. See Setting the Output Voltage section.
Active-high TTL/CMOS logic-level shutdown input. In shutdown mode, VOUT is a diode drop
4 7 SHDN below V+ (due to the DC path from V+ to the output) and the supply current drops to 5µA
maximum. Connect to ground for normal operation.
1.5V reference output that can source 100µA for external loads. Bypass to GND with 0.1µF.
5 8 REF
The reference is disabled in shutdown.
6 — AGND Analog ground
7 9 GND High-current ground return for the output driver
8 11 CS Positive input to the current-sense amplifier. Connect the current-sense resistor between CS and GND.
Input sense point for 12V-output operation. Connect VOUT to V12 for 12V-output operation.
— 1 V12
Leave unconnected for adjustable-output operation.
Input sense point for 5V-output operation. Connect VOUT to V5 for 5V-output operation. Leave
— 2 V5
unconnected for adjustable-output operation.
Low-battery output is an open-drain output that goes low when LBI is less than 1.5V. Connect to V+
— 4 LBO
through a pull-up resistor. Leave floating if not used. LBO is high impedance in shutdown mode.
— 5 LBI Input to the internal low-battery comparator. Tie to GND or V+ if not used.
— 10 SGND Shunt regulator ground. Leave unconnected if the shunt regulator is not used.

_______________________________________________________________________________________ 7
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
_________________________________________________Pin Description (continued)
MAX770–MAX773

PIN
MAX770 NAME FUNCTION
MAX771 MAX773
MAX772
Low-level gate/base drive for external power transistor. Connect to the gate of an external
— 12 EXTL
N-channel MOSFET or to the base of an external NPN transistor.
High-level gate/base drive for external power transistor. Connect to EXTL when using an external
— 13 EXTH N-channel MOSFET. When using an external NPN transistor, connect a resistor RBASE from
EXTH to the base of the NPN to set the maximum base-drive current.
Input sense point for 15V-output operation. Connect VOUT to V15 for 15V-output operation.
— 14 V15
Leave unconnected for adjustable-output operation

_______________Detailed Description range is 2V to VOUT. The voltage applied to the gate of

the external power transistor is switched from VOUT to
The MAX770–MAX773 are BiCMOS, step-up, switch- ground, providing more switch gate drive and thus
mode power-supply controllers that provide preset 5V, reducing the transistor’s on resistance.
12V, and 15V output voltages, in addition to adjustable-
output operation. Their unique control scheme com- In non-bootstrapped mode, the IC is powered from the
bines the advantages of pulse-frequency modulation input voltage (V+) and operates with minimum supply
(low supply current) and pulse-width modulation (high current. In this mode, FB is the output voltage sense
efficiency with heavy loads), providing high efficiency point. Since the voltage swing applied to the gate of the
over a wide output current range, as well as increased external power transistor is reduced (the gate swings
output current capability over previous PFM devices. from V+ to ground), the power transistor’s on resistance
In addition, the external sense resistor and power increases at low input voltages. However, the supply
transistor allow the user to tailor the output current current is also reduced because V+ is at a lower volt-
capability for each application. Figure 1 shows the age, and because less energy is consumed while
MAX770–MAX773 block diagram. charging and discharging the external MOSFET’s gate
capacitance. The minimum input voltage for the
The MAX770–MAX773 offer three main improvements MAX770–MAX773 is 3V when using external feedback
over prior pulse-skipping control solutions: 1) the con- resistors. With supply voltages below 5V, bootstrapped
verters operate with tiny (5mm height and less than mode is recommended.
9mm diameter) surface-mount inductors due to their
300kHz switching frequency; 2) the current-limited PFM Note: When using the MAX770/MAX771/MAX772 in
control scheme allows 87% efficiencies over a wide non-bootstrapped mode, there is no preset output
range of load currents; and 3) the maximum supply operation because V+ is also the output voltage
current is only 110µA. sense point for fixed-output operation. External
resistors must be used to set the output voltage.
The MAX773 can be configured to operate from an Use 1% external feedback resistors when operating
internal 6V shunt regulator, allowing very high input/out- in adjustable-output mode (Figures 2c, 2d, 3b, 3d, 3e)
put voltages. Its output can be configured for an to achieve an overall output voltage accuracy of ±5%.
adjustable voltage or for one of three fixed voltages The MAX773 can be operated in non-bootstrapped
(5V, 12V, or 15V), and it has a power-fail comparator for mode without using external feedback resistors
low-battery detection. because V+ does not act as the output voltage sense
All devices have shutdown capability, reducing the point with preset-output operation. To achieve high-
supply current to 5µA max. est efficiency, operate in bootstrapped mode when-
ever possible.
Bootstrapped/Non-Bootstrapped Modes
Figures 2 and 3 show standard application circuits for MAX773 Shunt-Regulator Operation
bootstrapped and non-bootstrapped modes. In boot- The MAX773 has an internal 6V shunt regulator that
strapped mode, the IC is powered from the output allows the device to step up from very high input
(VOUT, which is connected to V+) and the input voltage voltages (Figure 4).

8 _______________________________________________________________________________________
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers

MAX770–MAX773
LBO V15 V12 V5 FB

V+
DUAL-MODE
LBI MAX773 ONLY COMPARATOR MAX770–MAX773
N N

SHDN

200mV
BIAS
REF 1.5V CIRCUITRY
REFERENCE ERROR
COMPARATOR

ONE-SHOT MAX770
MAX771
Q TRIG MAX772 V+
N
6V

F/F SGND
S Q
R EXT
CONTROL EXTH
LOW-VOLTAGE 2.5V MAX773
OSCILLATOR ONLY
ONE-SHOT
EXTL
TRIG Q

CURRENT-SENSE
AMPLIFIER
0.2V 0.1V EXT
MAX770
MAX771
MAX772
CS

Figure 1. Block Diagram

Floating the shunt-regulator ground (SGND) disables External Power-Transistor

the shunt regulator. To enable it, connect SGND to Control Circuitry
GND. The shunt regulator requires 1mA minimum cur-
PFM Control Scheme
rent for proper operation; the maximum current must
The MAX770–MAX773 use a proprietary current-limited
not exceed 20mA. The MAX773 operates in non-boot-
PFM control scheme to provide high efficiency over a
strapped mode when the shunt regulator is used, and
wide range of load currents. This control scheme com-
EXT swings between the 6V shunt-regulator voltage
bines the ultra-low supply current of PFM converters (or
and GND.
pulse skippers) with the high full-load efficiency of
When using the shunt regulator, use an N-channel pow- PWM converters.
er FET instead of an NPN power transistor as the power Unlike traditional PFM converters, the MAX770–
switch. Otherwise, excessive base drive will collapse MAX773 use a sense resistor to control the peak induc-
the shunt regulator. tor current. They also operate with high switching

_______________________________________________________________________________________ 9
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
MAX770–MAX773

VIN = 3V VIN = 5V

C2 C2
0.1µF 2 0.1µF 2
V+ V+
5 REF C1 5 REF C1
100µF 68µF
C3 L1 C3 L1
0.1µF MAX770 22µH D1 0.1µF MAX771 22µH D1
4 SHDN VOUT = 5V 4 SHDN VOUT = 12V
1N5817 @ 1A 1N5817 @ 0.5A

3 FB 1 N 3 FB 1
EXT EXT N
MTP3055EL Si9410DY
6 AGND 8 6 AGND 8
CS CS
RSENSE C4 RSENSE C4
GND 75mΩ 300µF GND 100mΩ 200µF
7 7

Figure 2a. 5V Preset Output, Bootstrapped Figure 2b. 12V Preset Output, Bootstrapped

VIN = 5V VIN = 4V

C1 C2 C2
68µF 0.1µF 0.1µF
2 C1
2
L1 L1 47µF
V+ 22µH V+ 20µH
5 REF D1 VOUT = 12V 5 REF D1
1N5817 @ 0.5A 1N5817 VOUT = 9V
C3 C3
0.1µF 0.1µF
4 SHDN MAX770 1 C4 4 SHDN MAX770 EXT
1
N
C4
EXT N 100µF
MAX771 200µF MAX771 Si9410DY
MAX772 MAX772
6 AGND 8 6 8
CS AGND CS
RSENSE R2 RSENSE R2
100mΩ 127k 3 140k
3 FB
FB
GND GND
R1 R1
7 7 28k
18k

R2 = (R1) ( VVOUT -1) R2 = (R1) ( VVOUT -1)

REF REF
VREF = 1.5V VREF = 1.5V

Figure 2c. 12V Output, Non-Bootstrapped Figure 2d. 9V Output, Bootstrapped

frequencies (up to 300kHz), allowing the use of tiny minimum off-time (2.3µs); there is no oscillator. Once
external components. off, the minimum off-time one-shot holds the switch
As with traditional PFM converters, the power transistor off for 2.3µs. After this minimum time, the switch either
is not turned on until the voltage comparator senses 1) stays off if the output is in regulation, or 2) turns on
that the output is out of regulation. However, unlike tra- again if the output is out of regulation.
ditional PFM converters, the MAX770–MAX773 switch The control circuitry allows the ICs to operate in contin-
using the combination of a peak current limit and a pair uous-conduction mode (CCM) while maintaining high
of one-shots that set the maximum on-time (16µs) and efficiency with heavy loads. When the power switch is

10 ______________________________________________________________________________________
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers

MAX770–MAX773
VIN = 5V
C2
L1
3 VIN C1 C2 D1 VOUT = 24V
0.1µF 150µH
V+ 47µF 0.1µF 1N5818 @ 30mA
1 V12
3
14 V15 910Ω
V+
2 V5 10 EXTH 13 ZTX694B
SGND C1 L1
R4 10 SGND
22µH
63.4k 8 REF 100k 4 LBO 12 C4
(1%)
MAX773 D1 VOUT EXTL
C3 LBO 4 1N5817
150µF
= 12V 8 REF
0.1µF MAX773
5 LBI Si9410DY CS 11
C3
EXTH 13 N 0.1µF RSENSE
5 V15 14
R3 7 SHDN EXTL 12 LBI 0.4Ω
10k C4 V12 1
(1%) CS 11
7 V5 2
6 SHDN
FB RSENSE FB 6
GND
9 R2
R1 510k
GND
34k
9
VTRIP (V)
MIN NOMINAL MAX R4 = R3
V
( VTRIP -1)
R2 = (R1) ( VVOUT -1)
REF
10.6 11.0 11.4 REF VREF = 1.5V
VREF = 1.5V

Figure 3a. 12V Preset Output, Bootstrapped, N-Channel Figure 3b. 24V Output, Non-Bootstrapped, NPN Power
Power MOSFET Transistor

VIN
VIN = 5V
C1 C2 C1 L1
0.1µF L1 20µH
22µH VOUT = 16V
D1
3 1N5817 VOUT = 15V C2 D1
V+ 3 0.1µF 1N5817
10 SGND
EXTH 13 N V+
4 LBO 13 N
12 Si9410DY EXTH
EXTL 4 LBO Si9410DY
12 C4
EXTL
8 REF CS 11
C3 C4 8 REF CS 11
0.1µF MAX773 RSENSE C3 RSENSE
0.1µF MAX773
5
7 V15 14
LBI V15 14
SHDN
6 1 7 V12 1
FB V12 SHDN 2 R2
5 V5
LBI V5 2 133k
10
SGND FB 6
GND
GND R1
9
13.7k
9
R2 = (R1) ( VVOUT -1)
REF
VREF = 1.5V

Figure 3c. 15V Preset Output, Non-Bootstrapped N-Channel Figure 3d. 16V Output, Bootstrapped, N-Channel
Power MOSFET Power MOSFET

______________________________________________________________________________________ 11
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
MAX770–MAX773

VIN = 24V TO 28V

VIN
L1
C1 RSHUNT 250µH
47µF 3k
D1 VOUT = 100V RSHUNT
C2 3 MUR115 @ 10mA
0.1µF 10 v+ MAX773
SGND N
EXTH 13
4 LBO Si9420DY
12 C4 3 V+
EXTL
100µF
8 REF CS 11
C3 RSENSE C2 6V (typ)
0.1µF MAX773 V15 14 1.0Ω 0.1µF
5 LBI V12 1
V5 2 R2 10 SGND
7 6 732k (1%)
SHDN FB
VIN (MIN) - VSHUNT (MAX)
R1 RSHUNT =
GND
11.3k (1%) I SHUNT *
9 VOUT * SEE TEXT FOR ISHUNT CALCULATION
R2 = (R1) ( VREF
)
-1
VREF = 1.5V

Figure 3e. 100V Output, Shunt Regulator, N-Channel Power Figure 4. MAX773 Shunt Regulator
MOSFET

turned on, it stays on until either 1) the maximum on- Low-Voltage Start-Up Oscillator
time one-shot turns it off (typically 16µs later), or 2) the The MAX770/MAX771/MAX772 feature a low input volt-
switch current reaches the peak current limit set by the age start-up oscillator that guarantees start-up with no
current-sense resistor. load down to 2V when operating in bootstrapped mode
To increase light-load efficiency, the current limit for the and using internal feedback resistors. At these low volt-
first two pulses is set to one-half the peak current limit. ages, the supply voltage is not large enough for proper
If those pulses bring the output voltage into regulation, error-comparator operation and internal biasing. The
the error comparator holds the MOSFET off and the start-up oscillator has a fixed 50% duty cycle and the
current limit remains at one-half the peak current limit. If MAX770/MAX771/MAX772 disregard the error-com-
the output voltage is still out of regulation after two parator output when the supply voltage is less than
pulses, the current limit for the next pulse is raised to 2.5V. Above 2.5V, the error-comparator and normal one-
the peak current limit set by the external sense resistor shot timing circuitry are used. The low voltage start-up
(see inductor current waveforms in the Typical circuitry is disabled if non-bootstrapped mode is select-
Operating Characteristics). ed (FB is not tied to ground).
The MAX770–MAX773 switching frequency is variable The MAX773 does not provide the low-voltage 50%
(depending on load current and input voltage), causing duty-cycle oscillator. Its minimum start-up voltage is 3V
variable switching noise. However, the subharmonic for all modes.
noise generated does not exceed the peak current limit External Transistor
times the filter capacitor equivalent series resistance An N-FET power switch is recommended for the
(ESR). For example, when generating a 12V output at MAX770/MAX771/MAX772.
500mA from a 5V input, only 180mV of output ripple
occurs using the circuit of Figure 2b. The MAX773 can drive either an N-channel MOSFET
(N-FET) or an NPN because it provides two separate

12 ______________________________________________________________________________________
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
drive outputs (EXTH and EXTL) that operate 180° out of

MAX770–MAX773
phase (Figures 3a and 3b). In Figure 3b, the resistor in
series with EXTH limits the base current, and EXTL (which R2
is connected directly to the base) turns the transistor off. FB VOUT

Shutdown Mode MAX770 R1

When SHDN is high, the MAX770–MAX773 enter shut- MAX771
down mode. In this mode, the internal biasing circuit- MAX772
ry is turned off (including the reference) and V OUT MAX773
falls to a diode drop below VIN (due to the DC path
R1 = 10k TO 500k
from the input to the output). In shutdown mode, the
supply current drops to less than 5µA. SHDN is a GND V
R2 = R1 ( VOUT -1)
TTL/CMOS logic-level input. Connect SHDN to GND for REF
VREF = 1.5V
normal operation.
The MAX773’s shunt regulator is not disabled in shut- Figure 5. Adjustable Output Circuit
down mode.
Low-Battery Detector See Table 1 for a summary of operating characteristics
The MAX773 provides a low-battery comparator that and requirements for the ICs in bootstrapped and non-
compares the voltage on LBI to the reference voltage. bootstrapped modes.
When the LBI voltage is below VREF, LBO (an open- The MAX770–MAX773’s output voltage can be adjust-
drain output) goes low. The low-battery comparator’s ed from very high voltages down to 3V, using external
20mV of hysteresis adds noise immunity, preventing resistors R1 and R2 configured as shown in Figure 5.
repeated triggering of LBO. Use a resistor-divider network For adjustable-output operation, select feedback resis-
between V+, LBI, and GND to set the desired trip voltage tor R1 in the range of 10kΩ to 500kΩ. R2 is given by:
VTRIP. LBO is high impedance in shutdown mode.

__________________Design Procedure
VOUT -1
R2 = (R1) –––––
VREF
( )
Setting the Output Voltage where VREF equals 1.5V.
To set the output voltage, first determine the mode of
For preset-output operation, tie FB to GND (this
operation, either bootstrapped or non-bootstrapped.
forces bootstrapped-mode operation for the
Bootstrapped mode provides more output current
MAX770/MAX771/MAX772).
capability, while non-bootstrapped mode reduces the
supply current (see Typical Operating Characteristics). Configure the MAX773 for a preset voltage of 5V, 12V, or
If a decaying voltage source (such as a battery) is 15V by connecting the output to the corresponding
used, see the additional notes in the Low Input Voltage sense input pin (i.e., V5, V12, or V15). FB must be tied to
Operation section. ground for preset-output operation. Leave all unused
sense input pins unconnected. Failure to do so will cause
Use the MAX770/MAX771/MAX772 unless one or more
an incorrect output voltage. The MAX773 can provide
of the following conditions applies. If one or more of the
a preset output voltage in both bootstrapped and non-
following is true, use the MAX773:
bootstrapped modes.
1) An NPN power transistor will be used as the power Figures 2 and 3 show various circuit configurations for
switch bootstrapped/non-bootstrapped, preset/adjustable
2) The LBI/LBO function is required operation.
3) The shunt regulator must accommodate a high Shunt-Regulator Operation
input voltage When using the shunt regulator, connect SGND to ground
and place a 0.1µF capacitor between V+ and SGND, as
4) Preset-output non-bootstrapped operation is close to the IC as possible. Increase C2 to 1.0µF to
desired—for example, to reduce the no-load improve shunt regulators performance with heavy loads.
supply current in a 5V to 12V application. Select RSHUNT such that 1mA ≤ ISHUNT ≤ 20mA.

______________________________________________________________________________________ 13
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
Table 1. Bootstrapped vs. Non-Bootstrapped Operation
MAX770–MAX773

PARAMETER BOOTSTRAPPED* NON-BOOTSTRAPPED

Gate Drive GND to VOUT GND to V+
FET On Resistance Lower Higher
Gate-Drive Capacitive Losses Higher Lower
No-Load Supply Current Higher Lower
2V to 16.5V (MAX770/MAX771/MAX772),
(internal feedback resistors) 3V to 16.5V
Possible Input Voltage Range 3V to 16.5V (MAX770/MAX771/MAX772), (MAX770/MAX771/MAX772),
(external feedback resistors) 3V and up (MAX773)
3V to 16.5V (MAX773)
5V to 16.5V
Normally Recommended Input 2V to 5V (MAX770/MAX771/MAX772),
(MAX770/MAX771/MAX772),
Voltage Range 3V to 5V (MAX773)
5V and up (MAX773)
Fixed Output Available MAX770–MAX773(N) MAX773(N)/MAX773(S)
MAX770/MAX771/MAX772/
Adjustable Output Available MAX770–MAX773(N)
MAX773(N)/MAX773(S)

*MAX773(S) indicates shunt mode; MAX773(N) indicates NOT in shunt mode.

Use an N-channel FET as the power switch when using VIN

the shunt regulator (see MAX773 Shunt-Regulator
Operation in the Detailed Description). The shunt-regu-
C2 C1
lator current powers the MAX773 and also provides the RSHUNT
0.1µF
FET gate-drive current, which depends largely on the
FET’s total gate charge at VGS = 5V. To determine the 3
V+ 10
shunt-resistor value, first determine the maximum shunt SGND L1
20µH
current required.
13 NPN
ISHUNT = ISUPP + IGATE EXTH D1 VOUT
2N2222A
See N-Channel MOSFETs in the Power-Transistor 12 100Ω
EXTL N
Selection section to determine IGATE.
PNP R2 C4
Determine the shunt-resistor value using the following MAX773 2N2907A
equation:
11
VIN(min) - VSHUNT(max) CS
RSHUNT(max) = ———————————— RSENSE
ISHUNT
6
where VSHUNT(max) is 6.3V. FB

The shunt regulator is not disabled in shutdown R1

mode, and continues to draw the calculated shunt
current.
If the calculated shunt regulator current exceeds 20mA, Figure 6. Increased N-FET Gate Drive when Using the Shunt
Regulator
or if the shunt current exceeds 5mA and less shunt reg-
ulator current is desired, use the circuit of Figure 6 to
provide increased drive and reduced shunt current
when driving N-FETs with large gate capacitances. To prevent the shunt regulator from drawing current in
Select ISHUNT = 3mA. This provides adequate biasing shutdown mode, place a switch in series with the shunt
current for this circuit, although higher shunt currents resistor.
can be used.

14 ______________________________________________________________________________________
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers

MAX770–MAX773
3.5 3.5
VOUT = 5V VOUT = 12V
L = 22µH L = 22µH
3.0 3.0

MAXIMUM OUTPUT CURRENT (A)

MAXIMUM OUTPUT CURRENT (A)

RSENSE = 40mΩ
RSENSE = 40mΩ
2.5 2.5 RSENSE = 50mΩ
RSENSE = 50mΩ
RSENSE = 75mΩ
2.0 RSENSE = 75mΩ 2.0

1.5 1.5

1.0 1.0
RSENSE = 100mΩ RSENSE = 100mΩ
0.5 0.5
RSENSE = 200mΩ RSENSE = 200mΩ
0 0
2 3 4 5 2 4 6 8 10 12
INPUT VOLTAGE (V) INPUT VOLTAGE (V)

Figure 7a. Maximum Output Current vs. Input Voltage Figure 7b. Maximum Output Current vs. Input Voltage
(VOUT = 5V) (VOUT = 12V)

3.5 0.8
VOUT = 15V VOUT = 24V
L = 22µH
3.0 L =150µH
MAXIMUM OUTPUT CURRENT (A)

RSENSE = 40mΩ MAXIMUM OUTPUT CURRENT (A)

RSENSE = 50mΩ 0.6
2.5
RSENSE = 75mΩ RSENSE = 100mΩ
2.0 RSENSE = 200mΩ
0.4
1.5

1.0
RSENSE = 100mΩ 0.2

0.5 RSENSE = 400mΩ

RSENSE = 200mΩ
0 0
2 4 6 8 10 12 14 16 2 6 10 14
INPUT VOLTAGE (V) INPUT VOLTAGE (V)
Figure 7c. Maximum Output Current vs. Input Voltage Figure 7d. Maximum Output Current vs. Input Voltage
(VOUT = 15V) (VOUT = 24V)

Determining RSENSE sense-resistor value with an output current that is ade-

The Typical Operating Characteristics graphs show the quate at the lowest input voltage.
output current capability for various modes, sense
resistors, and input/output voltages. Use these graphs, Determining the Inductor (L)
along with the theoretical output current curves shown Practical inductor values range from 10µH to 300µH.
in Figures 7a-7d, to select RSENSE. These theoretical 20µH is a good choice for most applications. In appli-
curves assume that an external N-FET power switch is cations with large input/output differentials, the IC’s
used. They were derived using the minimum (worst- output current capability will be much less when the
case) current-limit comparator threshold value, and the inductance value is too low, because the IC will always
inductance value. No tolerance was included for operate in discontinuous mode. If the inductor value
R SENSE . The voltage drop across the diode was is too low, the current will ramp up to a high level
assumed to be 0.5V, and the drop across the power before the current-limit comparator can turn off the
switch rDS(ON) and coil resistance was assumed to be switch. The minimum on-time for the switch (tON(min))
0.3V. To use the graphs, locate the graph with the is approximately 2µs; select an inductor that allows
appropriate output voltage or the graph having the the current to ramp up to I LIM/2 in no less than 2µs.
nearest output voltage higher than the desired output Choosing a value of ILIM/2 allows the half-size current
voltage. On this graph, find the curve for the largest pulses to occur, increasing light-load efficiency and
minimizing output ripple.

______________________________________________________________________________________ 15
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
MAX770–MAX773

IC(PEAK) L
MAX770
MAX773
MAX771
MAX772 IB RBASE
EXTH NPN
EXT N
EXTL
CS
CS
RSENSE
RSENSE

Figure 8a. Use an N-Channel MOSFET with the Figure 8c. Using an NPN Transistor with the MAX773
MAX770/MAX771/MAX772

preferably under 20mΩ. To minimize radiated noise,

use a toroid, a pot core, or a shielded coil.
L
MAX773
Table 2 lists inductor suppliers and specific recom-
mended inductors.
Power Transistor Selection
EXTH N Use an N-channel MOSFET power transistor with the
EXTL MAX770/MAX771/MAX772 (Figure 8a).
CS Use an N-FET whenever possible with the MAX773. An
RSENSE NPN transistor can be used, but be extremely careful
when determining the base current (see NPN
Transistors section). An NPN transistor is not recom-
mended when using the shunt regulator.
Figure 8b. Using an N-Channel MOSFET with the MAX773 N-Channel MOSFETs
To ensure the external N-channel MOSFET (N-FET) is
The standard operating circuits use a 22µH inductor. turned on hard, use logic-level or low-threshold
If a different inductance value is desired, select L N-FETs when the input drive voltage is less than 8V. This
such that: applies even in bootstrapped mode, to ensure start-up.
VIN(max) x tON(min) N-FETs provide the highest efficiency because they do
L ≥ —————————— not draw any DC gate-drive current, but they are typi-
ILIM / 2 cally more expensive than NPN transistors. When using
Larger inductance values tend to increase the start-up an N-FET with the MAX773, connect EXTH and EXTL to
time slightly, while smaller inductance values allow the the N-FET’s gate (Figure 8b).
coil current to ramp up to higher levels before the When selecting an N-FET, three important parameters
switch turns off, increasing the ripple at light loads. are the total gate charge (Qg), on resistance (rDS(ON)),
Inductors with a ferrite core or equivalent are recom- and reverse transfer capacitance (CRSS).
mended; powder iron cores are not recommended for Qg takes into account all capacitances associated with
use with high switching frequencies. Make sure the charging the gate. Use the typical Qg value for best
inductor’s saturation current rating (the current at which results; the maximum value is usually grossly over-
the core begins to saturate and the inductance starts to specified since it is a guaranteed limit and not the mea-
fall) exceeds the peak current rating set by RSENSE. sured value. The typical total gate charge should be
However, it is generally acceptable to bias the inductor 50nC or less. With larger numbers, the EXT pins may
into saturation by approximately 20% (the point where not be able to adequately drive the gate. The EXT
the inductance is 20% below the nominal value). For rise/fall time with various capacitive loads as shown in
highest efficiency, use a coil with low DC resistance, the Typical Operating Characteristics.

16 ______________________________________________________________________________________
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
The two most significant losses contributing to the rent IC(PEAK). Calculate IB as follows:

MAX770–MAX773
N-FET’s power dissipation are I2R losses and switching IB = ILIM/ß
losses. Select a transistor with low r DS(ON) and low
CRSS to minimize these losses. Use the worst-case (lowest) value for ß given in the
transistor’s electrical specification, where the collector
Determine the maximum required gate-drive current current used for the test is approximately equal to ILIM.
from the Qg specification in the N-FET data sheet. It may be necessary to use even higher base currents
The MAX773’s maximum allowed switching frequency (e.g., IB = ILIM /10), although excessive IB may impair
during normal operation is 300kHz; but at start-up the operation by extending the transistor’s turn-off time.
maximum frequency can be 500kHz, so the maximum
RBASE is determined by:
current required to charge the N-FET’s gate is
f(max) x Qg(typ). Use the typical Qg number from the (VEXTH - VBE - VCS(min ))
transistor data sheet. For example, the Si9410DY has a RBASE = ————————————–
Qg(typ) of 17nC (at VGS = 5V), therefore the current IB
required to charge the gate is: Where V EXTH is the voltage at V+ (in bootstrapped
IGATE (max) = (500kHz) (17nC) = 8.5mA. mode VEXTH is the output voltage), VBE is the 0.7V
The bypass capacitor on V+ (C2) must instantaneously transistor base-emitter voltage, VCS(min) is the voltage
furnish the gate charge without excessive droop (e.g., drop across the current-sense resistor, and I B is the
less than 200mV): minimum base current that forces the transistor into
saturation. This equation reduces to (V+ - 700mV -
Qg 170mV) / IB.
∆V+ = ——
C2 For maximum efficiency, make RBASE as large as pos-
Continuing with the example, ∆V+ = 17nC/0.1µF = 170mV. sible, but small enough to ensure the transistor is
always driven near saturation. Highest efficiency is
Use I GATE when calculating the appropriate shunt
obtained with a fast-switching NPN transistor
resistor. See the Shunt Regulator Operation section.
(fT ≥ 150MHz) with a low collector-emitter saturation
Figure 2a’s application circuit uses an MTD3055EL voltage and a high current gain. A good transistor to
logic-level N-FET with a guaranteed threshold voltage use is the Zetex ZTX694B.
(V TH) of 2V. Figure 2b’s application circuit uses an
8-pin Si9410DY surface-mount N-FET that has 50mΩ Diode Selection
on resistance with 4.5V VGS, and a guaranteed VTH of The MAX770–MAX773’s high switching frequency
less than 3V. demands a high-speed rectifier. Schottky diodes such
as the 1N5817–1N5822 are recommended. Make sure
NPN Transistors
that the Schottky diode’s average current rating
The MAX773 can drive NPN transistors, but be
exceeds the peak current limit set by RSENSE, and that
extremely careful when determining the base-current
its breakdown voltage exceeds VOUT. For high-temper-
requirements. Too little base current can cause exces-
ature applications, Schottky diodes may be inadequate
sive power dissipation in the transistor; too much base
due to their high leakage currents; high-speed silicon
current can cause the base to oversaturate, so the tran-
diodes may be used instead. At heavy loads and high
sistor remains on continually. Both conditions can dam-
temperatures, the benefits of a Schottky diode’s low for-
age the transistor.
ward voltage may outweigh the disadvantages of its
When using the MAX773 with an NPN transistor, con- high leakage current.
nect EXTL to the transistor’s base, and connect RBASE
between EXTH and the base (Figure 8c). Capacitor Selection
To determine the required peak inductor current, Output Filter Capacitor
IC(PEAK), observe the Typical Operating Characteristics The primary criterion for selecting the output filter
efficiency graphs and the theoretical output current capacitor (C2) is low effective series resistance (ESR).
capability vs. input voltage graphs to determine a The product of the peak inductor current and the output
sense resistor that will allow the desired output current. filter capacitor’s ESR determines the amplitude of the
Divide the 170mV worst-case (smallest) voltage across ripple seen on the output voltage. An OS-CON 300µF,
the current-sense amplifier VCS(max) by the sense- 6.3V output filter capacitor has approximately 50mΩ of
resistor value. To determine IB, set the peak inductor ESR and typically provides 180mV ripple when
current (ILIM) equal to the peak transistor collector cur- stepping up from 3V to 5V at 1A (Figure 2a).

______________________________________________________________________________________ 17
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
MAX770–MAX773

Smaller capacitors are acceptable for light loads or in VIN

applications that can tolerate higher output ripple.
Since the output filter capacitor’s ESR affects efficien-
cy, use low-ESR capacitors for best performance. The
V+
smallest low-ESR surface-mount tantalum capacitors R4 R5
currently available are the Sprague 595D series. Sanyo 100k
OS-CON organic semiconductor through-hole capaci- MAX773
LBI LBO
tors and the Nichicon PL series also exhibit low ESR. LOW-BATTERY
See Table 2. R3 OUTPUT

Input Bypass Capacitors

GND
The input bypass capacitor (C1) reduces peak currents
drawn from the voltage source and also reduces noise
V
at the voltage source caused by the switching action of R4 = R3 ( VTRIP -1)
the MAX770–MAX773. The input voltage source imped- REF
VREF = 1.5V
ance determines the size of the capacitor required at
the V+ input. As with the output filter capacitor, a low- Figure 9. Input Voltage Monitor Circuit
ESR capacitor is recommended. For output currents up
to 1A, 150µF (C1) is adequate, although smaller __________Applications Information
bypass capacitors may also be acceptable.
Bypass the IC with a 0.1µF ceramic capacitor (C2) MAX773 Operation with High
placed close to the V+ and GND pins. Input/Output Voltages
The MAX773’s shunt regulator input allows high volt-
Reference Capacitor ages to be converted to very high voltages. Since the
Bypass REF with a 0.1µF capacitor (C3). REF can MAX773 runs off the 6V shunt (bootstrapped operation
source up to 100µA of current. is not allowed), the IC will not see the high input volt-
age. Use an external logic-level N-FET as the power
Setting the Low-Battery-Detector Voltage
switch, since only 6V of VGS are available. Also, make
To set the low-battery detector’s falling trip voltage
sure all external components are rated for very high
(VTRIP(falling)), select R3 between 10kΩ and 500kΩ
output voltage. Figure 3e shows a circuit that converts
(Figure 9), and calculate R4 as follows:
28V to 100V.

R4 = (R3) (———————
V
V
-V
TRIP
)
REF
REF
Low Input Voltage Operation
When using a power supply that decays with time
(such as a battery), the N-FET transistor will operate in
where VREF = 1.5V. its linear region when the voltage at EXT approaches
The rising trip voltage is higher because of the com- the threshold voltage of the FET, dissipating excessive
parator’s approximately 20mV of hysteresis, and is power. Prolonged operation in this mode may damage
determined by: the FET. This effect is much more significant in non-
R4 bootstrapped mode than in bootstrapped mode, since
VTRIP (rising) = (VREF + 20mV) (1 + ——) bootstrapped mode typically provides much higher
R3 VGS voltages. To avoid this condition, make sure VEXT
Connect a high value resistor (larger than R3 + R4) is above the VTH of the FET, or use a voltage detector
between LBI and LBO if additional hysteresis is required. (such as the MAX8211) to put the IC in shutdown mode
once the input supply voltage falls below a predeter-
Connect a pull-up resistor (e.g., 100kΩ) between LBO
mined minimum value. Excessive loads with low input
and V+. Tie LBI to GND and leave LBO floating if the
voltages can also cause this condition.
low-battery detector is not used.

18 ______________________________________________________________________________________
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
Starting Up under Load lead, and the output filter capacitor ground lead to a

MAX770–MAX773
The Typical Operating Characteristics show the Start- single point (star ground configuration). Also, minimize
Up Voltage vs. Load Current graph for bootstrapped- lead lengths to reduce stray capacitance, trace resis-
mode operation. This graph depends on the type tance, and radiated noise. Place input bypass capaci-
of power switch used. The MAX770–MAX773 are tor C2 as close as possible to V+ and GND.
not designed to start up under full load in boot- Excessive noise at the V+ input may falsely trigger the
strapped mode with low input voltages. timing circuitry, resulting in short pulses at EXT. If this
occurs it will have a negligible effect on circuit efficien-
Layout Considerations cy. If desired, place a 4.7µF directly across the V+ and
Due to high current levels and fast switching wave- GND pins (in parallel with the 0.1µF C2 bypass capaci-
forms, which radiate noise, proper PC board layout is tor) to reduce the noise at V+.
essential. Protect sensitive analog grounds by using a
star ground configuration. Minimize ground noise by
connecting GND, the input bypass capacitor ground

Table 2. Component Suppliers

PRODUCTION INDUCTORS CAPACITORS TRANSISTORS DIODES
N-FET
Sumida Siliconix
Matsuo
CD54 series Si9410DY
267 series Nihon
Surface Mount CDR125 series Si9420DY (high voltage)
Sprague EC10 series
Coiltronics Motorola
595D series
CTX20 series MTP3055EL
MTD20N03HDL
Sanyo
Sumida
OS-CON series
RCH855 series NPN Motorola
Nichicon
Through Hole RCH110 series Zetex 1N5817–1N5822
PL series
Renco ZTX694B MUR115 (high voltage)
United Chemi-Con
RL1284-18
LXF series

SUPPLIER PHONE FAX

Coiltronics USA: (561) 241-7876 (561) 241-9339
Matsuo USA: (714) 969-2491 (714) 960-6492
Japan: 81-6-337-6450 81-6-337-6456
Nichicon USA: (847) 843-7500 (847) 843-2798
Nihon USA: (805) 867-2555 (805) 867-2698
Renco USA: (516) 586-5566 (516) 586-5562
Sanyo USA: (619) 661-6835 (619) 661-1055
Japan: 81-7-2070-6306 81-7-2070-1174
Sumida USA: (847) 956-0666
Japan: 81-3-3607-5111 81-3-3607-5144
United Chemi-Con USA: (714) 255-9500 (714) 255-9400
Zetex USA: (516) 543-7100 (516) 864-7630
UK: 44-61-627-4963 44-61-627-5467

______________________________________________________________________________________ 19
 5V/12V/15V or Adjustable, High-Efficiency,
Low IQ, Step-Up DC-DC Controllers
___Ordering Information (continued) _________________Chip Topographies
MAX770–MAX773

PART TEMP. RANGE PIN-PACKAGE MAX770/MAX771/MAX772

MAX771CPA 0°C to +70°C 8 Plastic DIP
EXT
MAX771CSA 0°C to +70°C 8 SO
MAX771C/D 0°C to +70°C Dice*
MAX771EPA -40°C to +85°C 8 Plastic DIP V+ CS
MAX771ESA -40°C to +85°C 8 SO
MAX771MJA -55°C to +125°C 8 CERDIP
MAX772CPA 0°C to +70°C 8 Plastic DIP 0.126"
MAX772CSA 0°C to +70°C 8 SO (3.200mm)
MAX772C/D 0°C to +70°C Dice*
MAX772EPA -40°C to +85°C 8 Plastic DIP
MAX772ESA -40°C to +85°C 8 SO GND
MAX772MJA -55°C to +125°C 8 CERDIP FB AGND
MAX773CPD 0°C to +70°C 14 Plastic DIP
MAX773CSD 0°C to +70°C 14 SO
MAX773C/D 0°C to +70°C Dice*
MAX773EPD -40°C to +85°C 14 Plastic DIP
SHDN 0.080" REF
MAX773ESD -40°C to +85°C 14 Narrow SO
MAX773MJD -55°C to +125°C 14 CERDIP (2.032mm)

*Contact factory for dice specifications.

TRANSISTOR COUNT: 501;
____Pin Configurations (continued) SUBSTRATE CONNECTED TO V+.
MAX773
TOP VIEW
V5 V12 V15

EXTH
V+ EXTL
V12 1 14 V15 LBO CS

V5 2 13 EXTH
SGND
V+ 3 12 EXTL
LBI
LBO 4 MAX773 11 CS 0.126"

LBI 5 (3.200mm)
10 SGND
FB 6 9 GND GND

SHDN 7 FB GND
8 REF

DIP/SO

SHDN 0.080" REF

(2.032mm)

TRANSISTOR COUNT: 501;

SUBSTRATE CONNECTED TO V+.

20 ______________________________________________________________________________________